Symbol Parameter FDPF18N20FT_G Unit V DSS Drain to Source Voltage 200 V V GSS Gate to Source Voltage ±30 V
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1 FDPF8N20FT_G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve dv/dt Capability RoHS Compliant Applications LCD/LED TV Consumer Appliances Lighting Uninterruptible Power Supply AC-DC Power Supply G DS TO-220F Description UniFET TM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode s reverse recovery performance of UniFET FRFET has been enhanced by lifetime control. Its t rr is less than 00nsec and the reverse dv/dt immunity is 5V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. G D S April 203 MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter FDPF8N20FT_G Unit V DSS Drain to Source Voltage 200 V V GSS Gate to Source Voltage ±30 V I D Drain Current Thermal Characteristics -Continuous (T C = 25 o C) 8* -Continuous (T C = 00 o C) 0.8* I DM Drain Current - Pulsed (Note ) 72* A E AS Single Pulsed Avalanche Energy (Note 2) 324 mj I AR Avalanche Current (Note ) 8 A E AR Repetitive Avalanche Energy (Note ) 0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 o C) 35 W - Derate above 25 o C 0.27 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Symbol Parameter FDPF8N20FT_G Unit R θjc Thermal Resistance, Junction to Case, Max. 3.6 R θcs Thermal Resistance, Case to Sink, Typ. 0.5 R θja Thermal Resistance, Junction to Ambient, Max A o C/W
2 Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Eco Status Reel Size Tape Width Quantity FDPF8N20FT FDPF8N20F_G TO-220F Green/RoHS Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T J = 25 o C V BV DSS T J I DSS For Fairchild's definition of "green"eco Status, please visit: On Characteristics Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Dynamic Characteristics Switching Characteristics I D = 250µA, Referenced to 25 o C V/ o C V DS = 200V, V GS = 0V V DS = 60V, T C = 25 o C I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±00 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 9A Ω g FS Forward Transconductance V DS = 20V, I D = 9A (Note 4) S C iss Input Capacitance pf V DS = 25V, V GS = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Q g(tot) Total Gate Charge at 0V nc Q gs Gate to Source Gate Charge V DS = 60V, I D = 8A nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4, 5) nc t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 00V, I D = 8A ns t d(off) Turn-Off Delay Time R G = 25Ω ns t f Turn-Off Fall Time (Note 4, 5) ns µa Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 8A V t rr Reverse Recovery Time V GS = 0V, I SD = 8A ns Q rr Reverse Recovery Charge di F /dt = 00A/µs (Note 4) nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, I AS = 8A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 8A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
3 Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 50 0 V GS = 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250µs Pulse Test 2. T C = 25 o C 0. 0 V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics 0 50 o C. V DS = 20V µs Pulse Test V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature V GS = 0V V GS = 20V *Note: T J = 25 o C I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] o C 25 o C 25 o C. V GS = 0V µs Pulse Test V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss *Note:. V GS = 0V 2. f = MHz VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics V DS = 40V V DS = 00V V DS = 60V C rss V DS, Drain-Source Voltage [V] *Note: I D = 8A Q g, Total Gate Charge [nc] 3
4 Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A] V GS = 0V 2. I D = 250µA T J, Junction Temperature [ o C] Figure 9. Maximum Drain Current vs. Case Temperature Figure 8. Maximum Safe Operating Area - FDP8N20F ID, Drain Current [A] Operation in This Area is Limited by R DS(on). T C = 25 o C 2. T J = 50 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 20µs 00µs ms 0ms DC T C, Case Temperature [ o C] Figure 0. Transient Thermal Response Curve - FDP8N20F Thermal Response [Z θjc ] Single pulse P DM t t 2. Z θjc (t) = 3.0 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] 4
5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
6 V GS ( Driver ) Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD V DS _ L Driver R G Same Type as DUT V GS dv/dt controlled by RG I SD controlled by pulse period Gate Pulse Width D = Gate Pulse Period V DD 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
7 Mechanical Dimensions TO-220M03 Dimensions in Millimeters 6
8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM Green Bridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Marking Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. tm LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 6
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P-Channel.V Specified PowerTrench MOSFET November General Description This P-Channel.V specified MOSFET uses Fairchild s advanced low voltage PowerTrench process. It has been optimized for battery power
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