FCH22N60N N-Channel MOSFET 600V, 22A, 0.165Ω Features
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1 FCH22N60N N-Channel MOSFET 600V, 22A, 0.65Ω Features R DS(on) = 0.40Ω ( Typ.)@ V GS = V, I D = A BV DSS T J = 50 o C Ultra Low Gate Charge ( Typ. Qg = 45nC) Low Effective Output Capacitance 0% Avalanche Tested RoHS Compliant Description June 20 SupreMOS TM tm The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G G D S TO-247 S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter FCH22N60N Units V DSS Drain to Source Voltage 600 V V GSS Gate to Source Voltage ±30 V I D Drain Current Continuous (T C = 25 o C) 22 Continuous (T C = 0 o C) 3.8 A I DM Drain Current Pulsed (Note ) 66 A E AS Single Pulsed Avalanche Energy (Note 2) 672 mj I AR Avalanche Current 7.3 A E AR Repetitive Avalanche Energy 2.75 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 20 MOSFET dv/dt 0 P D Power Dissipation (T C = 25 o C) 205 W Derate above 25 o C.64 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCH22N60N Units R θjc Thermal Resistance, Junction to Case 0.6 R θcs Thermal Resistance, Case to Heat Sink (Typical) 0.24 R θja Thermal Resistance, Junction to Ambient 40 V/ns o C/W 20 Fairchild Semiconductor Corporation
2 Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FCH22N60N FCH22N60N TO Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS ΔBV DSS ΔT J On Characteristics Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient I D = ma, V GS = 0V,T J = 25 o C I D = ma, V GS = 0V, T J = 50 o C I D = ma, Referenced to 25 o C V/ o C V I DSS Zero Gate Voltage Drain Current DS = 480V, V GS = 0V - - μa V DS = 480V, T J = 25 o C I GSS Gate to Body Leakage Current V GS = ±50V, V DS = 0V - - ±0 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250μA V R DS(on) Static Drain to Source On Resistance V GS = V, I D = A Ω g FS Forward Transconductance V DS = 20V, I D = A S V Dynamic Characteristics C iss Input Capacitance pf V DS = 0V, V GS = 0V C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf C oss Output Capacitance V DS = 380V, V GS = 0V, f = MHz pf C oss eff. Effective Output Capacitance V DS = 0V to 480V, V GS = 0V pf Q g(tot) Total Gate Charge at V nc Q gs Gate to Source Gate Charge V DS = 380V, I D = A, nc Q gd Gate to Drain Miller Charge V GS = V (Note 4) nc ESR Equivalent Series Resistance (G-S) Drain Open, f=mhz - - Ω Switching Characteristics t d(on) Turn-On Delay Time ns t r Turn-On Rise Time V DD = 380V, I D = A ns t d(off) Turn-Off Delay Time R G = 4.7Ω ns t f Turn-Off Fall Time (Note 4) ns Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current A I SM Maximum Pulsed Drain to Source Diode Forward Current A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = A V t rr Reverse Recovery Time V GS = 0V, I SD = A ns Q rr Reverse Recovery Charge di F /dt = 0A/μs μc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 7.3A, R G = 25Ω, Starting T J = 25 C 3. I SD 22A, di/dt 200A/μs, V DD 380V, Starting T J = 25 C 4. Essentially Independent of Operating Temperature Typical Characteristics 2
3 Typical Performance Characteristics ID,Drain Current[A] Figure. On-Region Characteristics μs Pulse Test 2. T C = 25 o C V GS = 5.0 V.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V Figure 2. Transfer Characteristics. V DS = 20V μs Pulse Test V DS,Drain-Source Voltage[V] V GS,Gate-Source Voltage[V] ID,Drain Current[A] 0 50 o C -55 o C 25 o C Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature RDS(ON) [Ω], Drain-Source On-Resistance V GS = V V GS = 20V *Note: T C = 25 o C I D, Drain Current [A] IS, Reverse Drain Current [A] 50 o C 25 o C. V GS = 0V μs Pulse Test V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics E C oss C iss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note:. V GS = 0V 2. f = MHz 0. 0 V DS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics V DS = 20V V DS = 300V V DS = 480V *Note: I D = A Q g, Total Gate Charge [nc] 3
4 Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature V GS = 0V 2. I D = ma T J, Junction Temperature [ o C] RDS(on), [Normalized] Drain-Source On-Resistance Figure 8. On-Resistance Variation vs. Temperature V GS = V 2. I D = A T J, Junction Temperature [ o C] ID, Drain Current [A] Figure 9. Maximum Safe Operating Area 0 0. Operation in This Area is Limited by R DS(on). T C = 25 o C 0μs ms ms 2. T J = 50 o C 3. Single Pulse V DS, Drain-Source Voltage [V] DC μs ID, Drain Current [A] Figure. Maximum Drain Current vs. Case Temperature T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve Thermal Response [Z θjc ] Z θjc (t) = 0.6 o C/W Max. 2. Duty Factor, D= t /t 2 Single pulse 3. T JM - T C = P DM * Z θjc (t) Rectangular Pulse Duration [sec] P DM t t 2 4
5 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
6 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD Driver V DS _ L R G Same Type as DUT V DD V GS dv/dt controlled by RG I SD controlled by pulse period V GS ( Driver ) Gate Pulse Width D = Gate Pulse Period V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
7 Mechanical Dimensions TO-247-3L Dimensions in Millimeters 7
8 tm tm tm TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Auto-SPM Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficentMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FlashWriter * FPS F-PFS FRFET Global Power Resource SM Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM OptiHiT OPTOLOGIC OPTOPLANAR PDP SPM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Power-SPM PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, mw/w/kw at a time SignalWise SmartMax SMART START SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * The Power Franchise TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT * μserdes UHC Ultra FRFET UniFET VCX VisualMax XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete Formative / In Design First Production Full Production Not In Production Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 8 Rev. I48
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