33 A I CM. 114 Gate-to-Emitter Voltage. mj P T C =25 Maximum Power Dissipation. Operating Junction and -55 to T STG
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1 INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's G C E n-channel PD A Standard Speed IGBT V CES =2V V CE(on) typ. I C = 33A TO-247AC Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 2 V I T C = 25 C Continuous Collector Current 57 I T C = C Continuous Collector Current 33 A I CM Pulsed Collector Currentc 4 I LM Clamped Inductive Load Current d 4 Gate-to-Emitter Voltage ± 2 V GE V Transient Gate-to-Emitter Voltage ± 3 E ARV Reverse Voltage Avalanche Energye 27 mj P T C =25 Maximum Power Dissipation 2 P T C = Maximum Power Dissipation 8 W T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case.64 R θcs Case-to-Sink, Flat, Greased Surface.24 C/W R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6.(.2) g (oz) 7/8/8
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 2 V V GE = V, I C = 25µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = V, I C =. A V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.22 V/ C V GE = V, I C = 2. ma.47.7 I C = 33A V CE(ON) Collector-to-Emitter Saturation Voltage.75 I C = 57A See Fig.2, 5 V.55 I C = 33A, T J = 5 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 25µA DV GE(th) /DT J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 25µA g fe Forward Transconductance 27 4 S V CE = V, I C = 33A 25 V GE = V, V CE = 2V I CES Zero Gate Voltage Collector Current µa 2. V GE = V, V CE = V, T J = 25 C V GE = V, V CE = 2V, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 33A Q ge Gate - Emitter Charge (turn-on) nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) t d(on) Turn-On Delay Time 32 t r Rise Time 29 T J = 25 C ns t d(off) Turn-Off Delay Time I C = 33A, V CC = 96V t f Fall Time , R G = 5.Ω E on Turn-On Switching Loss.8 Energy losses include "tail" E off Turn-Off Switching Loss 9.6 mj See Fig. 9,, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 32 T J = 5 C, t r Rise Time 3 I C = 33A, V CC = 96V ns t d(off) Turn-Off Delay Time 7, R G = 5.Ω t f Fall Time Energy losses include "tail" E ts Total Switching Loss 37 mj See Fig.,,4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 36 V GE = V C oes Output Capacitance 6 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 3 ƒ =.MHz Notes: Repetitive rating; V GE = 2V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 8%(V CES ), V GE = 2V, L = µh, R G = 5.Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. 2
3 Load Current (A) Square wave: 6% of rated voltage For both: Duty cycle: 5% T J= 25 C T sink = 9 C Gate drive as specified Power Dissipation = 4W Triangular wave: Clamp voltage: 8% of rated Ideal diodes A. f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T J = 25 C T J = 5 C 8µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 5 C T J = 25 C V CC = 5V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3
4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) us PULSE WIDTH I C = I C = 66 A 33 A I C = 6.5 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2. 2. Peak T J= PDM x Z thjc + TC..... t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4
5 C, Capacitance (pf) C ies C oes C res VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 4V I C = 33A V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 96V T = 25 J C I C = 33A Total Switching Losses (mj) R G = 5Ω 5Ohm V CC = 96V I C = I C = 66A 33A I C = 6.5A R G, Gate, Gate Resistance ( Ω (Ohm) ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5
6 Total Switching Losses (mj) R G = 5Ω 5Ohm T J = 5 C V CC = 96V I C, Collector Current (A) V GE = 2V o T J = 25 C I C, Collector Current (A) SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Reverse Bias SOA 6
7 5V c V L V * C D.U.T. d -96V 48µF 96V R L = 96V 4X I C * Driver same type as D.U.T.; Vc = 8% of Vce(max) * Note: Due to the 5V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 5V V c L Driver* d V C D.U.T. e Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = ----V Fig. 4b - Switching Loss Waveforms 7
8 TO-247AC Package Outline (Dimensions are shown in milimeters (inches)) TO-247AC Part Marking Information GPBP,5)3( + Q6SUIVH7@S 96U@8P9@ I r)qv h r iy yv rƒ v v v qvph r GrhqA rr 6TT@H7G` GPU8P9@ `@6S 2! X@@F"$ GDI@C Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.7/28 8
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD 946E RG4P30U NSULTED GTE BPOLR TRNSSTOR UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design
More informationIRGBC30M Short Circuit Rated Fast IGBT
INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, V GE = 5V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs.
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationPD IRG4PC30UPbF. UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1
PD - 94923 NSULTED GTE BPOLR TRNSSTOR RG4P30UPbF UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 80 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC 8 A at 4 C V CE(on) typical at 8 A, 5 C. V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 180 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C(DC) 85 A at 9 C V CE(on) typical at A, 5 C.55 V I F(DC) 3 A at 9 C Speed 8 khz to 3 khz Package
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD - 9586A IRG4PC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Standard: Optimized fr minimum saturatin vltage and lw perating frequencies ( < khz) Generatin 4 IGBT design prvides
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9DAU SOT-7 PRODUCT SUMMARY V CES V I C DC 9 A at 9 C V CE(on) typical at 75 A, 5 C 3.3 V Speed 8 khz to 3 khz Package SOT-7 Circuit Single switch
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationIRGPH50FD2 Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for medium operating frequency (
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP TRENH IGBT PD - 97132 IRGP486PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery ircuits in PDP Applications l Low V E(on) and Energy per Pulse (E PULSE TM )
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 140 A
Insulated Gate Bipolar Transistor (Trench IGBT), 4 A VS-GT4DA6U PRODUCT SUMMARY SOT-7 V CES 6 V I C DC 4 A at 9 C () V CE(on) typical at A, 5 C.7 V I F DC 7 A at 9 C Speed 8 khz to 3 khz Package SOT-7
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationInsulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A
VS-GP5SA6S Insulated Gate Bipolar Transistor Trench PT IGBT, 6 V, 5 A Proprietary Vishay IGBT Silicon L Series SOT-7 PRIMARY CHARACTERISTICS V CES 6 V I C DC () 39 A at 9 C V CE(on) typical at A, 5 C.
More informationW T J Operating Junction and -55 to +150 T STG Storage Temperature Range C
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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