PD IRG4PC30UPbF. UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1

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1 PD NSULTED GTE BPOLR TRNSSTOR RG4P30UPbF UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design provides tighter parameter distribution and higher efficiency than Generation 3 ndustry standard TO-247 package Lead-Free G E n-channel ES = 600 E(on) typ. GE = 5, = 2 Benefits Generation 4 GBT's offer highest efficiency available GBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 R GBT's bsolute Maximum Ratings TO-247 Parameter Max. Units ES ollector-to-emitter Breakdown oltage T = 25 ontinuous ollector urrent T = 0 ontinuous ollector urrent 2 M Pulsed ollector urrent 92 LM lamped nductive Load urrent 92 GE Gate-to-Emitter oltage ± 20 E R Reverse oltage valanche Energy ƒ mj P T = 25 Maximum Power Dissipation 0 P T = 0 Maximum Power Dissipation 42 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-ase.2 R θs ase-to-sink, Flat, Greased Surface 0.24 /W R θj Junction-to-mbient, typical socket mount 40 Wt Weight 6 (0.2) g (oz) 2/30/03

2 RG4P30UPbF Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions (BR)ES ollector-to-emitter Breakdown oltage 600 GE = 0, = 250µ (BR)ES Emitter-to-ollector Breakdown oltage 8 GE = 0, =.0 (BR)ES/ T J Temperature oeff. of Breakdown oltage 0.63 / GE = 0, =.0m = 2 GE = 5 E(ON) ollector-to-emitter Saturation oltage 2.52 = 23 See Fig.2, = 2, T J = 50 GE(th) Gate Threshold oltage E = GE, = 250µ GE(th) / T J Temperature oeff. of Threshold oltage -3 m/ E = GE, = 250µ g fe Forward Transconductance S E = 0, = GE = 0, E = 600 ES Zero Gate oltage ollector urrent µ 2.0 GE = 0, E =, T J = GE = 0, E = 600, T J = 50 GES Gate-to-Emitter Leakage urrent ±0 n GE = ±20 Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) = 2 Q ge Gate - Emitter harge (turn-on) 8. 2 n = 400 See Fig.8 Q gc Gate - ollector harge (turn-on) 8 27 GE = 5 t d(on) Turn-On Delay Time 7 t r Rise Time 9.6 T J = 25 ns t d(off) Turn-Off Delay Time = 2, = 480 t f Fall Time GE = 5, R G = 23Ω E on Turn-On Switching Loss 0.6 Energy losses include "tail" E off Turn-Off Switching Loss 0.20 mj See Fig.,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 20 T J = 50, t r Rise Time 3 = 2, = 480 ns t d(off) Turn-Off Delay Time 80 GE = 5, R G = 23Ω t f Fall Time 40 Energy losses include "tail" E ts Total Switching Loss 0.73 mj See Fig. 3, 4 L E nternal Emitter nductance 3 nh Measured 5mm from package ies nput apacitance 0 GE = 0 oes Output apacitance 73 pf = 30 See Fig. 7 res Reverse Transfer apacitance 4 ƒ =.0MHz Notes: Repetitive rating; GE = 20, pulse width limited by max. junction temperature. ( See fig. 3b ) = 80%( ES ), GE = 20, L = µh, R G = 23Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2

3 RG4P30UPbF Load urrent () Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 24W Triangular wave: lamp voltage: 80% of rated deal diodes f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, = RMS of fundamental; for triangular wave, = PK ) 0 0, ollector-to-emitter urrent () T J = 25 T J = 50 GE = µs PULSE WDTH 0. E, ollector-to-emitter oltage (), ollector-to-emitter urrent () T J = 50 T J = 25 = 0. 5µs PULSE WDTH GE, Gate-to-Emitter oltage () Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics 3

4 RG4P30UPbF Maximum D ollector urrent ( GE = 5 E, ollector-to-emitter oltage () GE = 5 80µs PULSE WDTH = 24 = 2 = T, ase Temperature ( ) T, Junction Temperature ( ) J Fig. 4 - Maximum ollector urrent vs. ase Temperature Fig. 5 - ollector-to-emitter oltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = SNGLE PULSE (THERML RESPONSE) 2. Peak T J = P DMx Z thj + T t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 Fig. 6 - Maximum Effective Transient Thermal mpedance, Junction-to-ase P DM t t 2 4

5 RG4P30UPbF, apacitance (pf) GE = 0, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res GE, Gate-to-Emitter oltage () E = 400 = E, ollector-to-emitter oltage () Q g, Total Gate harge (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter oltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter oltage Total Switching Losses (mj) = 480 GE = 5 T J = 25 = 2 Total Switching Losses (mj) R G GE = 23 Ω = 5 = 480 = 24 = 2 = R G, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance T J, Junction Temperature ( ) Fig. - Typical Switching Losses vs. Junction Temperature 5

6 RG4P30UPbF Total Switching Losses (mj) R G = 23 Ω T J = 50 = 480 GE = 5, ollector-to-emitter urrent () 00 0 GE = 20 T = 25 J SFE OPERTNG RE , ollector-to-emitter urrent () , ollector-to-emitter oltage () E Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6

7 RG4P30UPbF 50 c 00 L * D.U.T. d µF 960 R L = * Driver same type as D.U.T.; c = 80% of ce(max) * Note: Due to the 50 power supply, pulse width and inductor will increase to obtain rated d. Fig. 3a - lamped nductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit c L Driver* d D.U.T. e Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., = 480 c d 90% e % 90% t d(off) Fig. 4b - Switching Loss Waveforms 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) 7

8 RG4P30UPbF TO-247 Package Outline Dimensions are shown in millimeters (inches) 5.90 (.626) 5.30 (.602) - B (.43) 3.55 (.40) 0.25 (.0) M (.27) D B M - D (.209) 4.70 (.85) 2.50 (.089).50 (.059) (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X (.056) 3X.00 (.039) 0.25 (.0) M S 3.40 (.33) 3.00 (.8) 2X (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) NOTES: 0.80 (.03) 3X 0.40 (.06) 2.60 (.2) 2.20 (.087) DMENSONNG & TOLERNNG PER NS Y4.5M, ONTROLLNG DMENSON : NH. 3 ONFORMS TO JEDE OUTLNE TO LED SSGNMENTS Hexfet GBT LED SSGNMENTS - Gate - Gate 2 - Drain - GTE2 - ollector 2 - DRN 3 - Source 3 - Emitter 3 - SOURE 4 - Drain 4 - DRN4 - ollector TO-247 Part Marking nformation EXMPLE: THS S N RFPE30 WTH SSEMBLY LOT ODE 5657 SSEMBLED ON WW 35, 2000 N THE SSEMBLY LNE "H" Note: "P" in assembly line position indicates "Lead-Free" NTERNTONL RETFER LOGO SSEMBLY LOT ODE RFPE30 035H PRT NUMBER DTE ODE YER 0 = 2000 WEEK 35 LNE H Data and specifications subject to change without notice. R WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (3) T Fax: (3) isit us at for sales contact information.2/03 8

9 Note: For the most current drawings please refer to the R website at: