C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

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1 PD INSULTED GTE BIPOLR TRNSISTOR IRG4P50UPbF UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247 package Lead-Free G E n-channel V ES = 600V V E(on) typ. GE = 5V, I = 27 Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's bsolute Maximum Ratings Thermal Resistance TO-247 Parameter Max. Units V ES ollector-to-emitter Breakdown Voltage 600 V T = 25 ontinuous ollector urrent 55 T = 00 ontinuous ollector urrent 27 I M Pulsed ollector urrent 220 I LM lamped Inductive Load urrent 220 V GE Gate-to-Emitter Voltage ± 20 V E RV Reverse Voltage valanche Energy ƒ 20 mj P T = 25 Maximum Power Dissipation 200 P T = 00 Maximum Power Dissipation 78 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. 0 lbf in (.N m) Parameter Typ. Max. Units R θj Junction-to-ase R θs ase-to-sink, Flat, Greased Surface /W R θj Junction-to-mbient, typical socket mount Wt Weight 6 (0.2) ---- g (oz) 04/26/04

2 IRG4P50UPbF Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage V V GE = 0V, I = 250µ V (BR)ES Emitter-to-ollector Breakdown Voltage V V GE = 0V, I =.0 V (BR)ES / T J Temperature oeff. of Breakdown Voltage V/ V GE = 0V, I =.0m I = 27 V GE = 5V V E(ON) ollector-to-emitter Saturation Voltage I = 55 See Fig.2, 5 V I = 27, T J = 50 V GE(th) Gate Threshold Voltage V E = V GE, I = 250µ V GE(th) / T J Temperature oeff. of Threshold Voltage mv/ V E = V GE, I = 250µ g fe Forward Transconductance S V E 5V, I = 27 I ES Zero Gate Voltage ollector urrent µ V GE = 0V, V E = 600V V GE = 0V, V E = 0V, T J = V GE = 0V, V E = 600V, T J = 50 I GES Gate-to-Emitter Leakage urrent ±00 n V GE = ±20V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) I = 27 Q ge Gate - Emitter harge (turn-on) n V = 400V See Fig. 8 Q gc Gate - ollector harge (turn-on) V GE = 5V t d(on) Turn-On Delay Time t r Rise Time T J = 25 ns t d(off) Turn-Off Delay Time I = 27, V = 480V t f Fall Time V GE = 5V, R G = 5.0Ω E on Turn-On Switching Loss Energy losses include "tail" E off Turn-Off Switching Loss mj See Fig. 0,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time T J = 50, t r Rise Time I = 27, V = 480V ns t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.0Ω t f Fall Time Energy losses include "tail" E ts Total Switching Loss mj See Fig. 3, 4 L E Internal Emitter Inductance nh Measured 5mm from package ies Input apacitance V GE = 0V oes Output apacitance pf V = 30V See Fig. 7 res Reverse Transfer apacitance ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V = 80%(V ES ), V GE = 20V, L = 0µH, R G = 5.0Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2

3 IRG4P50UPbF 80 Load urrent () Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 40W Triangular wave: lamp voltage: 80% of rated 20 Ideal diodes f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I, ollector-to-emitter urrent () T J = 50 T J = 25 V GE = 5V 20µ s PULSE W IDTH V E, ollector-to-emitter Voltag e (V ) I, ollector-to-emitter urrent () T J = 50 T J = 25 V = 0V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V ) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics 3

4 IRG4P50UPbF Maximum D ollector urrent () V GE = 5V V E, ollector-to-emitter Voltage (V) V GE = 5V 80µs PULSE WIDTH I I I = 54 = 27 = T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, Junction Temp erature ( ) J Fig. 5 - ollector-to-emitter Voltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = SIN GLE PU LS E (THERML RESPONSE) 2. Peak T J = P DM x Z thj + T t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase 4

5 IRG4P50UPbF, apacitance (pf) V GE = 0V, f = M Hz ies = ge + gc, ce SH ORTED res = gc oes = c e + gc ie s oes res V GE, Gate-to-Emitter Voltage (V) V E I = 400V = V E, ollector-to-emitter Voltage (V ) Q g, Total Gate harge (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 480V V GE = 5V T J = 25 I = 27 Total Sw itching Los ses (m J) 0 R V V G GE = 5.0 Ω = 5V = 480V I I I = 54 = 27 = R G, Gate Resistance ( Ω) T, Junction Temperature ( ) J Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 0 - Typical Switching Losses vs. Junction Temperature 5

6 IRG4P50UPbF Total Switching Losses (mj) R G = 5.0Ω T J = 50 V = 480V V GE = 5V I, ollector-to-emitter urrent () V GE = 20V T = 25 J SFE OPERTING RE I, ollector-to-emitter urrent ( ) V E, ollector-to-emitter Voltage (V) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6

7 IRG4P50UPbF 50V 000V L V * D.U.T V 480µF 960V R L = 480V 4 X * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit I 50V 000V L Driver* D.U.T. V ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., V = 480V 90% ƒ 0% V 90% t d(off) Fig. 4b - Switching Loss Waveforms I 5% 0% t d(on) t r E on E ts = (E on +E off ) 7 t f E off t=5µs

8 IRG4P50UPbF TO-247 Package Outline Dimensions are shown in millimeters (inches) TO-247 Part Marking Information EXMPLE: THIS IS N IRFPE30 WIT H S S E MB LY LOT ODE 5657 S S EMBLED ON WW 35, 2000 IN THE SSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RETIFIER LOGO SSEMBLY LOT ODE IRF PE30 035H PRT NUMBER DTE ODE YER 0 = 2000 WEE K 35 LINE H IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (30) T Fax: (30) Visit us at for sales contact information. Data and specifications subject to change without notice. 04/04 8

9 Note: For the most current drawings please refer to the IR website at:

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