C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
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1 PD INSULTED GTE BIPOLR TRNSISTOR IRG4P50UPbF UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247 package Lead-Free G E n-channel V ES = 600V V E(on) typ. GE = 5V, I = 27 Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's bsolute Maximum Ratings Thermal Resistance TO-247 Parameter Max. Units V ES ollector-to-emitter Breakdown Voltage 600 V T = 25 ontinuous ollector urrent 55 T = 00 ontinuous ollector urrent 27 I M Pulsed ollector urrent 220 I LM lamped Inductive Load urrent 220 V GE Gate-to-Emitter Voltage ± 20 V E RV Reverse Voltage valanche Energy ƒ 20 mj P T = 25 Maximum Power Dissipation 200 P T = 00 Maximum Power Dissipation 78 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. 0 lbf in (.N m) Parameter Typ. Max. Units R θj Junction-to-ase R θs ase-to-sink, Flat, Greased Surface /W R θj Junction-to-mbient, typical socket mount Wt Weight 6 (0.2) ---- g (oz) 04/26/04
2 IRG4P50UPbF Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage V V GE = 0V, I = 250µ V (BR)ES Emitter-to-ollector Breakdown Voltage V V GE = 0V, I =.0 V (BR)ES / T J Temperature oeff. of Breakdown Voltage V/ V GE = 0V, I =.0m I = 27 V GE = 5V V E(ON) ollector-to-emitter Saturation Voltage I = 55 See Fig.2, 5 V I = 27, T J = 50 V GE(th) Gate Threshold Voltage V E = V GE, I = 250µ V GE(th) / T J Temperature oeff. of Threshold Voltage mv/ V E = V GE, I = 250µ g fe Forward Transconductance S V E 5V, I = 27 I ES Zero Gate Voltage ollector urrent µ V GE = 0V, V E = 600V V GE = 0V, V E = 0V, T J = V GE = 0V, V E = 600V, T J = 50 I GES Gate-to-Emitter Leakage urrent ±00 n V GE = ±20V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) I = 27 Q ge Gate - Emitter harge (turn-on) n V = 400V See Fig. 8 Q gc Gate - ollector harge (turn-on) V GE = 5V t d(on) Turn-On Delay Time t r Rise Time T J = 25 ns t d(off) Turn-Off Delay Time I = 27, V = 480V t f Fall Time V GE = 5V, R G = 5.0Ω E on Turn-On Switching Loss Energy losses include "tail" E off Turn-Off Switching Loss mj See Fig. 0,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time T J = 50, t r Rise Time I = 27, V = 480V ns t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.0Ω t f Fall Time Energy losses include "tail" E ts Total Switching Loss mj See Fig. 3, 4 L E Internal Emitter Inductance nh Measured 5mm from package ies Input apacitance V GE = 0V oes Output apacitance pf V = 30V See Fig. 7 res Reverse Transfer apacitance ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V = 80%(V ES ), V GE = 20V, L = 0µH, R G = 5.0Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2
3 IRG4P50UPbF 80 Load urrent () Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 40W Triangular wave: lamp voltage: 80% of rated 20 Ideal diodes f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I, ollector-to-emitter urrent () T J = 50 T J = 25 V GE = 5V 20µ s PULSE W IDTH V E, ollector-to-emitter Voltag e (V ) I, ollector-to-emitter urrent () T J = 50 T J = 25 V = 0V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V ) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics 3
4 IRG4P50UPbF Maximum D ollector urrent () V GE = 5V V E, ollector-to-emitter Voltage (V) V GE = 5V 80µs PULSE WIDTH I I I = 54 = 27 = T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, Junction Temp erature ( ) J Fig. 5 - ollector-to-emitter Voltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = SIN GLE PU LS E (THERML RESPONSE) 2. Peak T J = P DM x Z thj + T t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase 4
5 IRG4P50UPbF, apacitance (pf) V GE = 0V, f = M Hz ies = ge + gc, ce SH ORTED res = gc oes = c e + gc ie s oes res V GE, Gate-to-Emitter Voltage (V) V E I = 400V = V E, ollector-to-emitter Voltage (V ) Q g, Total Gate harge (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 480V V GE = 5V T J = 25 I = 27 Total Sw itching Los ses (m J) 0 R V V G GE = 5.0 Ω = 5V = 480V I I I = 54 = 27 = R G, Gate Resistance ( Ω) T, Junction Temperature ( ) J Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 0 - Typical Switching Losses vs. Junction Temperature 5
6 IRG4P50UPbF Total Switching Losses (mj) R G = 5.0Ω T J = 50 V = 480V V GE = 5V I, ollector-to-emitter urrent () V GE = 20V T = 25 J SFE OPERTING RE I, ollector-to-emitter urrent ( ) V E, ollector-to-emitter Voltage (V) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6
7 IRG4P50UPbF 50V 000V L V * D.U.T V 480µF 960V R L = 480V 4 X * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit I 50V 000V L Driver* D.U.T. V ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., V = 480V 90% ƒ 0% V 90% t d(off) Fig. 4b - Switching Loss Waveforms I 5% 0% t d(on) t r E on E ts = (E on +E off ) 7 t f E off t=5µs
8 IRG4P50UPbF TO-247 Package Outline Dimensions are shown in millimeters (inches) TO-247 Part Marking Information EXMPLE: THIS IS N IRFPE30 WIT H S S E MB LY LOT ODE 5657 S S EMBLED ON WW 35, 2000 IN THE SSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RETIFIER LOGO SSEMBLY LOT ODE IRF PE30 035H PRT NUMBER DTE ODE YER 0 = 2000 WEE K 35 LINE H IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (30) T Fax: (30) Visit us at for sales contact information. Data and specifications subject to change without notice. 04/04 8
9 Note: For the most current drawings please refer to the IR website at:
C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @25 C, V GE
More informationIRL3102. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013Ω I D = 61A PRELIMINARY
l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR PD - 9587 IRG4PH40UPbF Ultra Fast Speed IGBT Features UltraFast: Optimized fr high perating frequencies up t 40 khz in hard switching, >200 khz in resnant mde New IGBT
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationIRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. UltraFast Co-Pack IGBT V CES = 600V. Features. V CE(on) typ. = 2.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 khz in hard switching, > 200 khz in resonant mode Generation 4 IGBT design
More informationIRF1010E. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.012Ω I D = 81A
l l l l l dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationIRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C
PDP TRENCH IGBT PD - 97484 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationPRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units
PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationFETKY MOSFET & Schottky Diode
l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRGB4086PbF IRGS4086PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High
More informationTO-247AC Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V
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IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) trench IGBT technology Low switching
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PD - 93E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier
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IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
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PD - 95742 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20FPbF Fast Speed IGBT Features C Fast: Optimized fr medium perating frequencies ( -5 khz in hard switching, >20 khz in resnant mde). Generatin 4 IGBT
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop.4vtyp. @ A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,
More informationIRG4BC20KD. Short Circuit Rated UltraFast IGBT V CES = 600V. V CE(on) typ. = 2.27V. Thermal Resistance. GE = 15V, I C = 9.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @ 25 C, V GE
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More information100% Rg tested Increased Reliability. Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen
PD -96276 V DS 3 V R DS(on) max (@V GS = V).85 mω Q g (typical) 37 nc R G (typical).5 Ω I D (@T c(bottom) = 25 C) h IRFH53PbF HEXFET Power MOSFET PQFN 5X6 mm pplications OR-ing MOSFET for 2V (typical)
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
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