W T J Operating Junction and -55 to +150 T STG Storage Temperature Range C

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1 INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247 package Lead-Free Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's bsolute Maximum Ratings IRG4P5FDPbF G E n-channel Fast opack IGBT TO-247 PD V ES = 6V V E(on) typ. GE = 5V, I = 39 Parameter Max. Units V ES ollector-to-emitter Voltage 6 V T = 25 ontinuous ollector urrent 7 T = ontinuous ollector urrent 39 I M Pulsed ollector urrent 28 I LM lamped Inductive Load urrent 28 I T = Diode ontinuous Forward urrent 25 I FM Diode Maximum Forward urrent 28 V GE Gate-to-Emitter Voltage ± 2 V P T = 25 Maximum Power Dissipation 2 P T = Maximum Power Dissipation 78 W T Operating unction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θ unction-to-ase - IGBT R θ unction-to-ase - Diode /W R θs ase-to-sink, flat, greased surface R θ unction-to-mbient, typical socket mount Wt Weight (.2) g (oz) 4/29/4

2 Electrical T = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltageƒ V V GE = V, I = 25µ V (BR)ES / T Temperature oeff. of Breakdown Voltage V/ V GE = V, I =.m V E(on) ollector-to-emitter Saturation Voltage I = 39 V GE = 5V V I = 7 See Fig. 2, I = 39, T = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µ V GE(th) / T Temperature oeff. of Threshold Voltage mv/ V E = V GE, I = 25µ g fe Forward Transconductance S V E = V, I = 39 I ES Zero Gate Voltage ollector urrent µ V GE = V, V E = 6V V GE = V, V E = 6V, T = 5 V FM Diode Forward Voltage Drop V I = 25 See Fig I = 25, T = 5 I GES Gate-to-Emitter Leakage urrent ± n V GE = ±2V Switching T = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) I = 39 Qge Gate - Emitter harge (turn-on) n V = 4V See Fig. 8 Q gc Gate - ollector harge (turn-on) V GE = 5V t d(on) Turn-On Delay Time T = 25 t r Rise Time ns I = 39, V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.Ω t f Fall Time Energy losses include "tail" and E on Turn-On Switching Loss diode reverse recovery. E off Turn-Off Switching Loss m See Fig. 9,,, 8 E ts Total Switching Loss t d(on) Turn-On Delay Time T = 5, See Fig. 9,,, 8 t r Rise Time ns I = 39, V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.Ω t f Fall Time Energy losses include "tail" and E ts Total Switching Loss m diode reverse recovery. L E Internal Emitter Inductance nh Measured 5mm from package ies Input apacitance V GE = V oes Output apacitance pf V = 3V See Fig. 7 res Reverse Transfer apacitance ƒ =.MHz t rr Diode Reverse Recovery Time ns T = 25 See Fig T = 25 4 I F = 25 I rr Diode Peak Reverse Recovery urrent T = 25 See Fig T = 25 5 V R = 2V Q rr Diode Reverse Recovery harge n T = 25 See Fig T = 25 6 di/dt 2/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery /µs T = 25 See Fig. During t b T =

3 5 Load urrent ( ) 4 3 6% of rated voltage Duty cycle: 5% T = 25 T sink = 9 Gate drive as specified Turn-on losses include effects of reverse recovery Pow er D iss ipation = 4W 2. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (Load urrent = I RMS of fundamental) I, ollector-to-emitter urrent () T = 5 T = 25 V GE = 5V 2µs PULSE W IDTH. V E, ollector-to-emitter Voltage (V) I, ollector-to-em itter urrent () T = 5 T = 25 V = 5V 5µs PULSE W IDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics 3

4 Maximum D ollector urrent () V GE = 5V V E, ollector-to-em itter Voltage (V) V GE = 5V 8µ s PULSE W IDTH I I I = 78 = 39 = T, ase Temperature ( ) T, unction Temp erature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature Fig. 5 - Typical ollector-to-emitter Voltage vs. unction Temperature Thermal Response (Z th ). D = SINGLE PULSE (THERML RESPONSE) 2. Peak T = P DM x Z th + T t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, unction-to-ase 4

5 , apacitance (pf) ies oes res V GE = V f = MHz ies = ge + gc + ce res = ce oes = ce + gc SHORTED V GE, Gate-to-Em itter Voltage (V) V I E = 4V = 39 V E, ollector-to-emitter Voltage (V) Q g, Total Gate harg e (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switchig Losses (m) V = 48V V GE = 5V T = 25 I = 39 Total Switchig Losses (m) R G = 5. Ω V GE = 5V V = 48V I = 78 I = 39 I = R G, Gate Resistance ( Ω) T, unction Temperature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. unction Temperature 5

6 Total Switchig Losses (m) R G = 5. Ω T = 5 V = 48V V GE = 5V I, ollector-to-emitter urrent () V GE = 2V T = 25 SFE OPERTING RE I, ollector-to-emitter urrent ( ) V E, ollector-to-emitter Voltage (V) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO Instantaneous Forward urrent - I F () T = 5 T = 25 T = Forward Voltage Drop - V FM (V ) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent 6

7 4 2 V R = 2V T = 25 T = 25 V R = 2V T = 25 T = 25 t rr - (ns) 8 6 I F = 5 I F = 25 I F = I IRRM - () I F = 5 I F = 25 I F = 4 2 di f /dt - (/µs) di f /dt - (/µ s) Fig. 4 - Typical Reverse Recovery vs. di f /dt Fig. 5 - Typical Recovery urrent vs. di f /dt 5 2 V R = 2V T = 25 T = 25 V R = 2V T = 25 T = 25 Q RR - (n) 9 6 I F = 5 I F = 25 di(rec)m/dt - (/µs) I = F 3 I F = 25 I F = di f /dt - (/µ s) I F = 5 di f /dt - (/µ s) Fig. 6 - Typical Stored harge vs. di f /dt Fig. 7 - Typical di (rec)m /dt vs. di f /dt 7

8 +Vge 9% Vge Same type device as D.U.T. Vce Ic % Vce Ic 9% Ic 8% of Vce 43µF D.U.T. td(off) tf 5% Ic t+5µ S Eoff = Vce ic dt t Fig. 8a - Test ircuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t t2 Fig. 8b - Test Waveforms for ircuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GTE VOLTGE D.U.T. +Vg Ic trr trr Qrr id dt = tx Vcc % Ic td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTGE ND URRENT Vpk tx % Vcc Irr DIODE REVERSE REOVERY ENERGY % Irr DIODE REOVERY WVEFORMS t4 Erec Vd id dt = t3 Vcc t3 t4 Fig. 8c - Test Waveforms for ircuit of Fig. 8a, Fig. 8d - Test Waveforms for ircuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 V g GTE SIGNL DEVIE UNDER TEST URRENT D.U.T. VOLTGE IN D.U.T. URRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test ircuit V L V * c D.U.T. - 48V R L = 48V 4 X 5V 6µF V Figure 9. lamped Inductive Load Test ircuit Figure 2. Pulsed ollector urrent Test ircuit 9

10 Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V =8%(V ES ), V GE =2V, L=µH, R G = 5.Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. TO-247 Package Outline Dimensions are shown in millimeters (inches) TO-247 Part Marking Information EXMPLE: T HIS IS N IRFPE3 WITH SSEMBLY LOT ODE 5657 S S EMBLED ON WW 35, 2 IN THE SSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNT IONL RETIFIER LOGO S S E MB L Y LOT ODE IRFPE3 35H PRT NUMBER DT E ODE YER = 2 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 9245, US Tel: (3) T Fax: (3) Visit us at for sales contact information. 4/4

11 Note: For the most current drawings please refer to the IR website at: