IRG7PH28UD1PbF IRG7PH28UD1MPbF
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1 IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low V F diode 13Vpk repetitive transient capacity % of the parts tested for I LM Positive V CE (ON) temperature co-efficient Tight parameter distribution Lead-free package G G C E n-channel V CES = 12V I C = 15A, T C = C T J(MAX) = 15 C V CE(ON) typ. = 1.95V G Benefits Device optimized for induction heating and soft switching applications High efficiency due to low V CE(ON), low switching losses and ultra-low V F Rugged transient performance for increased reliability Excellent current sharing in parallel operation Low EMI E C G IRG7PH28UD1PbF TO-247AC C E G IRG7PH28UD1MPbF TO-247AD G C E Gate Collector Emitter Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRG7PH28UD1PbF TO-247AC Tube 25 IRG7PH28UD1PbF IRG7PH28UD1MPbF TO-247AD Tube 25 IRG7PH28UD1MPbF Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 12 V V (BR) Transient Repetitive Transient Collector-to-Emitter Voltage 13 I T C = 25 C Continuous Collector Current 3 I T C = C Continuous Collector Current 15 I CM Pulse Collector Current, V GE = 15V I LM Clamped Inductive Load Current, V GE = 2V 6 A I T C = 25 C Diode Continuous Forward Current 3 I T C = C Diode Continuous Forward Current 15 I FM Diode Maximum Forward Current 6 V GE Continuous Gate-to-Emitter Voltage ±3 V P T C = 25 C Maximum Power Dissipation 115 W P T C = C Maximum Power Dissipation 46 T J Operating Junction and -55 to +15 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (1.1 N m) International Rectifier January 8, 213
2 Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Junction-to-Case (IGBT) 1.9 R θjc (Diode) Junction-to-Case (Diode) 1.35 C/W R θcs Case-to-Sink (flat, greased surface).24 R θja Junction-to-Ambient (typical socket mount) 4 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 12 V V GE = V, I C = µa V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 1.4 V/ C V GE = V, I C = 1mA (25 C-15 C) V CE(on) Collector-to-Emitter Saturation Voltage V I C = 15A, V GE = 15V, T J = 25 C 2.4 I C = 15A, V GE = 15V, T J = 15 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 35µA gfe Forward Transconductance 13 S V CE = 5V, I C = 15A, PW = 2µs I CES Collector-to-Emitter Leakage Current 1. µa V GE = V, V CE = 12V V GE = V, V CE = 12V, T J = 15 C V FM Diode Forward Voltage Drop V I F = 15A 1. I F = 15A, T J = 15 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±3V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 6 9 I C = 15A Q ge Gate-to-Emitter Charge (turn-on) 15 nc V GE = 15V Q gc Gate-to-Collector Charge (turn-on) 27 4 V CC = 6V E off Turn-Off Switching Loss µj I C = 15A, V CC = 6V, V GE = 15V R G = 22, L = 1.mH, T J = 25 C t d(off) Turn-Off delay time 229 ns Energy losses include tail & diode t f Fall time 62 reverse recovery E off Turn-Off Switching Loss 939 µj I C = 15A, V CC = 6V, V GE =15V R G = 22, L = 1.mH, T J = 15 C t d(off) Turn-Off delay time 272 ns Energy losses include tail & diode t f Fall time 167 reverse recovery C ies Input Capacitance 116 V GE = V C oes Output Capacitance 55 pf V CC = 3V C res Reverse Transfer Capacitance 3 f = 1.Mhz T J = 15 C, I C = 6A RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 96V, Vp 12V Rg = 22, V GE = +2V to V Notes: V CC = 8% (V CES ), V GE = 2V, L = 25µH, R G = 22. Pulse width limited by max. junction temperature. Refer to AN-86 for guidelines for measuring V (BR)CES safely. R is measured at T J of approximately 9 C. FBSOA operating conditions only. V GE = V, T J = 75 C, PW µs International Rectifier January 8, 213
3 I CE (A) I CE (A) V GE(th), Gate Threshold Voltage I C (A) I C (A) P tot (W) IRG7PH28UD1PbF/IRG7PH28UD1MPbF T C ( C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature I C = 35µA T C ( C) Fig. 2 - Power Dissipation vs. Case Temperature T J, Temperature ( C) Fig. 3 - Typical Gate Threshold Voltage vs. Junction Temperature Fig. 4 - Reverse Bias SOA T J = 15 C; VGE = 2V V GE = 18V V GE = 15V V GE = 12V V GE = V V GE = 8.V V GE = 18V V GE = 15V V GE = 12V V GE = V V GE = 8.V Fig. 5 - Typ. IGBT Output Characteristics TJ = -4 C; tp = 2µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25 C; tp = 2µs International Rectifier January 8, 213
4 I CE (A) I CE (A) I F (A) IRG7PH28UD1PbF/IRG7PH28UD1MPbF 6 V GE = 18V 5 V GE = 15V V GE = 12V 4 3 V GE = V V GE = 8.V C 15 C Fig. 7 - Typ. IGBT Output Characteristics T J = 15 C; tp = 2µs V F (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics I CE = 7.5A I CE = 15A I CE = 3A 8 6 I CE = 7.5A I CE = 15A I CE = 3A V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = -4 C Fig. - Typical V CE vs. V GE T J = 25 C I CE = 7.5A I CE = 15A I CE = 3A T J = 15 C T J = 25 C V GE (V) V GE (V) Fig Typical V CE vs. V GE T J = 15 C Fig Typ. Transfer Characteristics V CE = 5V; tp = 2µs International Rectifier January 8, 213
5 Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Energy (µj) Swiching Time (ns) Energy (µj) Swiching Time (ns) IRG7PH28UD1PbF/IRG7PH28UD1MPbF 2 16 td OFF 12 E OFF t F I C (A) I C (A) Fig Typ. Energy Loss vs. I C T J = 15 C; L = 1.mH; V CE = 6V, R G = 22 ; V GE = 15V 18 Fig Typ. Switching Time vs. I C T J = 15 C; L = 1.mH; V CE = 6V, R G = 22 ; V GE = 15V 16 td OFF E OFF 14 t F Rg ( ) R G ( ) Fig Typ. Energy Loss vs. R G T J = Fig Typ. Switching Time vs. R G T J = 15 C; L = 1.mH; V CE = 6V, I CE = 15A; V GE = 15V V CES = 6V Cies 12 V CES = 4V 8 Coes 6 Cres Q G, Total Gate Charge (nc) Fig Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig Typical Gate Charge vs. V GE I CE = 15A International Rectifier January 8, 213
6 Thermal Response ( Z thjc ) D = SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) J J Ci= i Ri Ci= i Ri R 1 R 2 R 3 R 1 R 2 R 3 R 4 R 4 C C 4 4 Ri ( C/W) Fig Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) i (sec) D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 2 R 3 R 1 R 2 R 3 J J Ci= i Ri Ci= i Ri R 4 R 4 C C 4 4 Ri ( C/W) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig. 2 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) i (sec) International Rectifier January 8, 213
7 L 1K DUT L VCC 8 V + - Rg DUT VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L C force K -5V Rg DUT / DRIVER VCC G force D1 DUT 22K.75µF C sense E sense Switching Loss E force Fig.C.T.3 - Switching Loss Circuit tf Fig.C.T.4 - BVCES Filter Circuit % I CE 2 15 I CE (A) 2 5% I CE 5% V CE Eoff Loss time(µs) 5-5 Fig. WF1 - Typ. Turn-off Loss T J = 15 C using Fig. CT International Rectifier January 8, 213
8 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 2/26/21 EXAMPLE: THIS IS AN IRFPE3 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 21 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE3 135H PART NUMBER DATE CODE YEAR 1 = 21 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier January 8, 213
9 TO-247AD Package Outline Dimensions are shown in millimeters (inches) E2/2 E A A A2 "A" Q E2 2X D B L1 "A" L SEE VIEW "B" 2x b2 b4 e 3x b Ø. 2x LEAD TIP B A c A1 Ø. Ø P B A -A- S THERMAL PAD D1 VIEW: "B" PLATING BASE METAL Ø. E1 B A (c) VIEW: "A" - "A" (b, b2, b4) SECTION: C-C, D-D, E-E TO-247AD Part Marking Information EXAM PLE: THIS IS AN IRGP3B12KD-E WITH ASSEMBLY LOT CODE 5657 ASSEM BLED ON W W 35, 2 IN THE ASSEMBLY LINE "H" N o te : "P " in a s s e m b ly lin e p o s itio n indicates "Lead-Free" PART NUMBER IN T E R N A T IO N A L RECTIFIER LOGO 35H DATE CODE ASSEMBLY YEAR = 2 LOT CODE WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier January 8, 213
10 Qualification Information Qualification Level Industrial (per JEDEC JESD47F) Moisture Sensitivity Level TO-247AC N/A RoHS Compliant TO-247AD Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release. Yes N/A IR WORLD HEADQUARTERS: 1 N. Sepulveda Blvd., El Segundo, California 9245, USA To contact International Rectifier, please visit International Rectifier January 8, 213
11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IRG7PH28UD1PBF IRG7PH28UD1MPBF
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More informationIRG4BC20KD. Short Circuit Rated UltraFast IGBT V CES = 600V. V CE(on) typ. = 2.27V. Thermal Resistance. GE = 15V, I C = 9.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @ 25 C, V GE
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Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationTO-247AC Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP TRENH IGBT PD - 97132 IRGP486PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery ircuits in PDP Applications l Low V E(on) and Energy per Pulse (E PULSE TM )
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More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop.4vtyp. @ A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
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More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
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Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationIGBT ECONO3 Module, 100 A
IGBT ECONO3 Module, A VS-GBYGNT ECONO 3 4 pack PRIMARY CHARACTERISTICS V CES V V CE(on) typ. at A 3.52 V I C(DC) at T C = 64 C A Package ECONO 3 Circuit configuration 4 pack with thermistor FEATURES Gen
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V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
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Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7
More informationprovide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC 8 A at 4 C V CE(on) typical at 8 A, 5 C. V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
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Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
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Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
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PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More information= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2
G C E TYPICAL PERFORMANCE CURVES 12V APT1GN12B2 APT1GN12B2 APT1GN12B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have
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Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
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PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
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Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
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PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
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I D, Drain Current (A) IR MOSFET StrongIRFET IRF6B27 HEXFET Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge
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