APT50GT120B2R(G) APT50GT120LR(G)

Transcription

1 APT5GT12B2R(G) APT5GT12LR(G) 12V, 5A, (ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. Features Low Forward Voltage Drop Low Tail Current RoHS Compliant RBSOA and SCSOA Rated High Frequency Switching to 5KHz Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Maximum Ratings All Ratings: T C unless otherwise specifi ed. Symbol Parameter Ratings Unit S -Emitter Voltage 12 Gate-Emitter Voltage ±3 Volts 1 Continuous T C 94 2 Continuous T C = 1 C 5 Amps M Pulsed Current 1 15 SSOA Switching Safe Operating = 15 C 12V P D Total Power Dissipation 6 Watts, T STG Operating and Storage Junction Temperature Range -55 to 15 T L Max. Lead Temp. for Soldering:.63 from Case for 1 Sec. 3 C Static Electrical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit V (BR)CES -Emitter Breakdown Voltage ( = V, = 3mA) (TH) Gate Threshold Voltage ( =, = 2mA, T j ) (ON) Emitter On Voltage (, = 5A, T j ) Emitter On Voltage (, = 5A, T j ) ES Cut-off Current ( = 12V, = V, T j ) ma Cut-off Current ( = 12V, = V, T j ) μa I GES Gate-Emitter Leakage Current ( = ±2V) na Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website Rev E 3-212

2 Dynamic Characteristics APT5GT12B2R_LR(G) Symbol Characteristic Test Conditions Min Typ Max Unit C ies Input Capacitance = V, = V C oes Output Capacitance f = 1MHz C res Reverse Transfer Capacitance P Gate-to-Emitter Plateau Voltage V Gate Charge Q g Total Gate Charge Q ge Gate-Emitter Charge = 6V nc Q gc Gate- Charge = 5A SSOA Switching Safe Operating Area = 15 C, = 1.Ω 7,, L = 1μH, = 12V 15 A t d(on) Turn-On Delay Time Current Rise Time Inductive Switching ( C) t d(off) Turn-Off Delay Time V CC = 8V ns f = 5A E on1 Turn-On Switching Energy 4 = 4.7Ω - TBD - t Current Fall Time E on2 Turn-On Switching Energy 5 = + C μj E off Turn-Off Switching Energy t d(on) Turn-On Delay Time Current Rise Time Inductive Switching (1 C) ns t d(off) Turn-Off Delay Time V CC = 8V t f Current Fall Time E = 5A on1 Turn-On Switching Energy 4 - TBD - = 4.7Ω E on2 Turn-On Switching Energy μj E off Turn-Off Switching Energy Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit pf R θ JC Junction to Case C/W W T Package Weight gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-75 Method E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode. 5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein Rev E 3-212

3 Typical Performance Curves , GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics , GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage FIGURE 1, Output Characteristics ( ) μs PULSE TEST<.5 % DUTY CYCLE. μs PULSE TEST <.5 % DUTY CYCLE = 55 C = -55 C = 5A = A = 15 C = 1A, GATE-TO-EMITTER VOLTAGE (V) V 13V APT5GT12B2R_LR(G) FIGURE 2, Output Characteristics ( ) = 5A GATE CHARGE (nc) FIGURE 4, Gate charge 7. μs PULSE TEST <.5 % DUTY CYCLE 6 = 1A 5 = 5A = 24V = 6V 11V = A 1V , Junction Temperature ( C) FIGURE 6, On State Voltage vs Junction Temperature 9V 8V 7V 6V = 96V V GS(TH), THRESHOLD VOLTAGE (NORMALIZED) , JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature, DC COLLECTOR CURRENT (A) T C, Case Temperature ( C) FIGURE 8, DC Current vs Case Temperature Rev E 3-212

4 Typical Performance Curves 35 3 APT5GT12B2R_LR(G) t d(on), TURN-ON DELAY TIME (ns) = 8V 5, or 1 C = 1.Ω L = 1μH E FIGURE 9, Turn-On Delay Time vs Current = 1.Ω, L = 1μH, = 8V t d(off), TURN-OFF DELAY TIME (ns) =15V, =1 C = 8V = 1.Ω L = 1μH =15V, = C E FIGURE 1, Turn-Off Delay Time vs Current = 1.Ω, L = 1μH, = 8V 12, RISE TIME (ns) = or 1 C,, FALL TIME (ns) ,, Rev E TURN ON ENERGY LOSS (μj) SWITCHING ENERGY LOSSES (μj) E FIGURE 11, Current Rise Time vs Current 2, 15, 1, 5, E FIGURE 13, Turn-On Energy Loss vs Current 6, 5, 4, 3, 2, 1, = 8V = 1.Ω = 8V 5A 1A 1A 5A Eon2, A A , GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance E OFF, TURN OFF ENERGY LOSS (μj) SWITCHING ENERGY LOSSES (μj) E FIGURE 12, Current Fall Time vs Current 6, 5, 4, 3, 2, 1, E FIGURE 14, Turn-Off Energy Loss vs Current 2, 15, 1, 5, = 8V = 1.Ω = 8V = 1.Ω 5A 1A 1A 5A A A , JUNCTION TEMPERATURE ( C) FIGURE 16, Switching Energy Losses vs Junction Temperature

5 Typical Performance Curves APT5GT12B2R_LR(G) 5 16 C ies 14 C, CAPACITANCE (pf) 1 1 C oes C res , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs -To-Emitter Voltage , COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area. Z θjc, THERMAL IMPEDANCE ( C/W) D = Note:. 1 t t 2.1 Duty Factor D = t1 /t 2 SINGLE PULSE.5 Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration P DM Dissipated Power (Watts) ( C) Rev E Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. T C ( C) Z EXT FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F MAX, OPERATING FREQUENCY (khz) 75 C 1 C T C = 75 C D = 5 % = 8V = 1.Ω Figure 2, Operating Frequency vs Current F max = min (f max, f max2 ).5 f max1 = t d(on) + + t d(off) + t f f max2 = P diss = P diss - P cond E on2 + E off - T C R θjc

6 APT5GT12B2R_LR(G ) 1% t d(on) Gate Voltage APT3DQ12 9% Current V CC 5% 1% 5% Switching Energy Voltage A D.U.T. Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 9% 9% Gate Voltage t d(off) Voltage t f 1% Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions T-MAX Package Outline TO-264 Package Outline 4.69 (.185) 5.31 (.29) 1.49 (.59) 2.49 (.98) (.61) (.64) 5.38 (.212) 6.2 (.244) 4.6 (.181) 5.21 (.) 1.8 (.71) 2.1 (.79) (.768) 2.5 (.87) 3.1 (.122) 3.48 (.137) 2.8 (.819) (.845) 5.79 (.228) 6.2 (.244).48 (1.3) (1.43) Rev E (.16).79 (.31) 2.21 (.87) 2.59 (.12) (.78) 2.32 (.8) 4.5 (.177) Max. 1.1 (.4) 1.4 (.55) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.87 (.113) 3.12 (.123) 1.65 (.65) 2.13 (.84) Gate Emitter 2.29 (.9) 2.69 (.16) (.78) (.842).48 (.19).76 (.3).84 (.33) 1.3 (.51) 2.59 (.12) 2.79 (.11) 3. (.118) 3.18 (.1) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.9) 2.69 (.16) Gate Emitter

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