C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
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1 PD INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast: Optimized for high operating frequencies up to 50 khz in hard switching, >200 khz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package. G E n-channel V CES = 600V V CE(on) typ. GE = 5V, = 40A Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specified application conditions. Designed for best performance when used with IR Hexfred & IR Fred companion diodes. TO-247AC Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 T C = 25 C Continuous Collector Current T C = 0 C Continuous Collector Current 40 A M Pulsed Collector Current 300 I LM Clamped Inductive Load Current 300 V GE Gate-to-Emitter Voltage ± 20 V E ARV Reverse Voltage Avalanche Energy ƒ 200 mj P T C = 25 C Maximum Power Dissipation 520 P T C = 0 C Maximum Power Dissipation 2 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case R θcs Case-to-Sink, Flat, Greased Surface C/W R θja Junction-to-Ambient, typical socket mount Wt Weight 6 (0.2) ---- g (oz) 04/26/02
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage V V GE = 0V, = 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage V V GE = 0V, =.0A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage V/ C V GE = 0V, =.0mA = 40A V GE = 5V V CE(ON) Collector-to-Emitter Saturation Voltage = 75A See Fig.2, 5 V = 40A, T J = 50 C V GE(th) Gate Threshold Voltage V CE = V GE, = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage mv/ C V CE = V GE, = 250µA g fe Forward Transconductance S V CE 0V, = 40A ES Zero Gate Voltage Collector Current µa V GE = 0V, V CE = 600V V GE = 0V, V CE = V, T J = 25 C V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) = 40A Q ge Gate - Emitter Charge (turn-on) nc V CC = 480V See Fig. 8 Q gc Gate - Collector Charge (turn-on) V GE = 5V t d(on) Turn-On Delay Time t r Rise Time T J = 25 C ns t d(off) Turn-Off Delay Time = 40A, V CC = 480V t f Fall Time V GE = 5V, R G = 5.0Ω E on Turn-On Switching Loss Energy losses include "tail" E off Turn-Off Switching Loss mj See Fig.,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time T J = 50 C, t r Rise Time = 40A, V CC = 480V ns t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.0Ω t f Fall Time Energy losses include "tail" E ts Total Switching Loss mj See Fig. 3, 4 L E Internal Emitter Inductance nh Measured 5mm from package C ies Input Capacitance V GE = 0V C oes Output Capacitance pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = TBD µh, R G = 5.0W. (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2
3 , Collector t-to-emitter Current (A), Collector-to-Emitter Current (A) 80 Square wave: 60% of rated voltage Triangular wave: 60 Ideal diodes Clamp voltage: 80% of rated Load Current ( A ) For both: Duty cycle : 50% Tj = 25 C Tsink = 90 C Gate drive as specified Power Dissipation = 73W 0. 0 f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) T J = 50 C 0 T J = 50 C T J = 25 C T J = 25 C V GE = 5V 20µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) V CC = V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3
4 Maximum DC Collector Current (A) V CE, Collector-to Emitter Voltage (V) V GE = 5V 3.0 V GE = 5V 80µs PULSE WIDTH = 80A = 40A 20 = 20A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature thjc Thermal Response (Z ) D = SINGLE PULSE (THERMAL RESPONSE) P DM t t 2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + T C t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4
5 Total Switching Losses (mj) Total Switching Losses (mj) C ies V GE = 0V, f = MHz C ies = C ge + C gc, C ce SHORTED C res = C gc C oes = C ce + C gc 20 6 V cc = 480V CC = 400V I c = 40V = 40A C, Capacitance (pf) C oes C res V GE, Gate-to-Emitter Voltage (V) V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 5V T J = 25 C = 40A 0 R G = 5.0Ω V GE = 5V V CC = 480V = 80A 3.00 = 40A 2.00 = 20A R G, Gate Resistance (Ω) T J, Junction Temperature ( C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5
6 Total Switching Losses (mj), Collector-to-Emitter Current (A) R G = 5.0Ω TJ = 50 C V GE = 5V V CC = 480V 00 V GE = 20V T J = SAFE OPERATING AREA , Collector Current (A) V DS, Drain-to-Source Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6
7 50V 00V L V * C D.U.T V 480µF 960V R L = 480V 4 C * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit 50V 00V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% ƒ % V C 90% t d(off) Fig. 4b - Switching Loss Waveforms 5% % t d(on) t r E on E ts = (E on +E off ) 7 t f E off t=5µs
8 TO-247AC Package Outline Dimensions are shown in millimeters (inches) * (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 5.90 (.626) 5.30 (.602) - B (.056) 3X.00 (.039) 0.25 (.0) M C A S 3.40 (.33) 3.00 (.8) 3.65 (.43) 3.55 (.40) 0.25 (.0) M D - A (.27) 2X - C (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) B M - D (.209) 4.70 (.85) 2.50 (.089).50 (.059) (.03) 3X 0.40 (.06) 2.60 (.2) 2.20 (.087) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION : INCH. 3 DIM ENSIONS ARE SHO W N M ILLIM ETER S (INCHES). 4 CO NFO RM S TO JEDEC O UTLINE TO-247AC. LEAD ASSIGNMENTS - GATE 2 - COLLECTO R 3 - EM ITTER 4 - COLLECTO R * LONGER LEADED (20mm) VERSION AVAILABLE (TO-247AD) TO ORDER ADD "-E" SUFFIX TO PART NUMBER TO-247AC Part Marking Information EXAMPLE : THIS IS AN IRFPE30 W ITH ASSEMBLY LOT CODE 3AQ INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 3AQ 9302 A PART NUMBER DATE CODE (YYWW) YY = YEAR WW W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.04/02 8
9 Note: For the most current drawings please refer to the IR website at:
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Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP TRENH IGBT PD - 97132 IRGP486PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery ircuits in PDP Applications l Low V E(on) and Energy per Pulse (E PULSE TM )
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE PD - 94938 IRG4B3FDPbF Fast opack IGBT Features Fast: Optimized for medium operating frequencies (-5 khz in hard switching, >2kHz in resonant
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD - 9586A IRG4PC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Standard: Optimized fr minimum saturatin vltage and lw perating frequencies ( < khz) Generatin 4 IGBT design prvides
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
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IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationW T J Operating Junction and -55 to +150 T STG Storage Temperature Range C
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9452E RG4B30U NSULTED GTE BPOLR TRNSSTOR UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design
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SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
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Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, V GE = 5V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs.
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SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V
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SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
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PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
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Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
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PD - 94372C HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S G S2 N-CHANNEL MOSFET 8 2 7 3 6 D D D2 N-Ch P-Ch DSS 2-2 G2 4 5 P-CHANNEL
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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