IRGBC30M Short Circuit Rated Fast IGBT

Transcription

1 INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - 25, V GE = 5V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency curve G E n-channel PD IRGB3M Short ircuit Rated Fast IGBT V ES = 6V V E(sat) GE = 5V, I = 6 Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. bsolute Maximum Ratings TO-22B Parameter Max. Units V ES ollector-to-emitter Voltage 6 V T = 25 ontinuous ollector urrent 26 T = ontinuous ollector urrent 6 I M Pulsed ollector urrent 52 I LM lamped Inductive Load urrent 52 t sc Short ircuit Withstand Time µs V GE Gate-to-Emitter Voltage ±2 V E RV Reverse Voltage valanche Energy mj P T = 25 Maximum Power Dissipation W P T = Maximum Power Dissipation 42 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θj Junction-to-ase.2 R θs ase-to-sink, flat, greased surface.5 /W R θj Junction-to-mbient, typical socket mount 8 Wt Weight 2 (.7) g (oz) -37 Revision

2 IRGB3M Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 6 V V GE = V, I = 25µ V (BR)ES Emitter-to-ollector Breakdown Voltage 2 V V GE = V, I =. V (BR)ES/ T J Temp. oeff. of Breakdown Voltage.65 V/ V GE = V, I =.m V E(on) ollector-to-emitter Saturation Voltage I = 6 V GE = 5V 2.7 V I = 26 See Fig. 2, I = 6, T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µ V GE(th) / T J Temperature oeff. of Threshold Voltage -2 mv/ V E = V GE, I = 25µ g fe Forward Transconductance S V E = V, I = 6 I ES Zero Gate Voltage ollector urrent 25 µ V GE = V, V E = 6V V GE = V, V E = 6V, T J = 5 I GES Gate-to-Emitter Leakage urrent ± n V GE = ±2V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) I = 6 Q ge Gate - Emitter harge (turn-on) 7.4 n V = 4V See Fig. 8 Q gc Gate - ollector harge (turn-on) 4 2 V GE = 5V t d(on) Turn-On Delay Time 3 T J = 25 t r Rise Time 3 ns I = 6, V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 23Ω t f Fall Time 3 47 Energy losses include "tail" E on Turn-On Switching Loss.4 E off Turn-Off Switching Loss.9 mj See Fig. 9,,, 4 E ts Total Switching Loss t sc Short ircuit Withstand Time µs V = 36V, T J = 25 V GE = 5V, R G = 23Ω, V PK < 5V t d(on) Turn-On Delay Time 3 T J = 5, t r Rise Time 3 ns I = 6, V = 48V t d(off) Turn-Off Delay Time 53 V GE = 5V, R G = 23Ω t f Fall Time 66 Energy losses include "tail" E ts Total Switching Loss 4.4 mj See Fig., 4 L E Internal Emitter Inductance 7.5 nh Measured 5mm from package ies Input apacitance 75 V GE = V oes Output apacitance pf V = 3V See Fig. 7 res Reverse Transfer apacitance 9.3 ƒ =.MHz Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 3b ) V =8%(V ES ), V GE =2V, L=µH, R G = 23Ω, ( See fig. 3a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. -38

3 IRGB3M Load urrent () 3 2 Square wave: 6% of rated voltage For both: Duty cycle: 5% T J = 25 T sink = 9 Gate drive as specified Power Dissipation = 2W Triangular wave: lamp voltage: 8% of rated Ideal diodes. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I, ollector-to-emitter urrent () T J = 25 T J = 5 V GE = 5V. 2µs PULSE WIDTH. V E, ollector-to-emitter Voltage (V) I, ollector-to-emitter urrent () T J = 5 T J = 25 V = V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -39

4 IRGB3M Maximum D ollector urrent () V GE = 5V V E, ollector-to-emitter Voltage (V) V GE = 5V 8µs PULSE WIDTH I = 32 I = 6 I = T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, ase Temperature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature Therm al Response (Z thj ). D = S IN G LE PU LS E (TH E R ML RE S PO N SE ) 2. P eak T J = P D M x Z th J + T t, R ectangular Pulse Duration (sec) N otes :. D uty f ac t or D = t / t 2 PD M t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase -3

5 IRGB3M, apacitance (pf) V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V GE, Gate-to-Emitter Voltage (V) V E = 4V I = 6 V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q g, Total Gate harge (n) Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 48V V GE = 5V T = 25 I = 6 Total Switching Losses (mj) R G = 23Ω V GE = 5V V = 48V I = 32 I = 6 I = R G, Gate Resistance (Ω) T, ase Temperature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature -3

6 IRGB3M Total Switching Losses (mj) R G = 23Ω T = 5 V = 48V V GE = 5V I, ollector-to-emitter urrent () V GE = 2V T J = 25 SFE OPERTING RE I, ollector-to-emitter urrent () Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SO Refer to Section D for the following: ppendix : Section D - page D-5 Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit Fig. 4a - Switching Loss Test ircuit Fig. 4b - Switching Loss Waveform Package Outline - JEDE Outline TO-22B Section D - page D-2-32

7 Note: For the most current drawings please refer to the IR website at: