provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40

Transcription

1 APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off - (ON) tradeoff results in superior effi ciency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of C res /C ies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT8GA6LD poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode) FEATURES Fast switching with low EMI Very Low E off for maximum efficiency Ultra low C res for improved noise immunity Low conduction loss Low gate charge Increased intrinsic gate resistance for low EMI RoHS compliant TYPICAL APPLICATIONS ZVS phase shifted and other full bridge Half bridge High power PFC boost Welding UPS, solar, and other inverters High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Parameter Ratings Unit V ces Collector Emitter Voltage 6 V Continuous Collector T C Continuous Collector T C = C 8 A M Pulsed Collector Current Gate-Emitter Voltage ± V P D Total Power T C 65 W SSOA Switching Safe Operating = 5 C 6V, T STG Operating and Storage Junction Temperature Range -55 to 5 T L Lead Temperature for Soldering:.6" from Case for Seconds C Static Characteristics unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit V BR(CES) Collector-Emitter Breakdown Voltage = V, =.ma 6 (on) V Collector-Emitter On Voltage GE,..5.9 (th) Gate Emitter Threshold Voltage =, = ma.5 6 ES V Zero Gate Voltage Collector Current CE = 6V, 75 = V I GES Gate-Emitter Leakage Current V GS = ±V ± na Microsemi Website - V μa 5-6 Rev D 6 -

2 Dynamic Characteristics unless otherwise specified APT8GA6LD Symbol Parameter Test Conditions Min Typ Max Unit C ies Input Capacitance Capacitance 69 C oes Output Capacitance = V, = 5V 58 pf C res Reverse Transfer Capacitance f = MHz 6 Q g Total Gate Charge Gate Charge Q ge Gate-Emitter Charge nc = V Q gc Gate- Collector Charge 78 = 5 C, =.7Ω,, SSOA Switching Safe Operating Area A L= uh, = 6V t d(on) Turn-On Delay Time Inductive Switching (5 C) Current Rise Time V CC = V 7 ns t d(off) Turn-Off Delay Time 58 t f Current Fall Time 78 E =.7Ω on Turn-On Switching Energy 8 μj 6 E off Turn-Off Switching Energy = +5 C 75 t d(on) Turn-On Delay Time Inductive Switching (5 C) Current Rise Time V CC = V ns t d(off) Turn-Off Delay Time 9 t f Current Fall Time E =.7Ω on Turn-On Switching Energy 75 μj 6 E off Turn-Off Switching Energy = +5 C Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R θjc Junction to Case Thermal Resistance (IGBT) - -. R θjc Junction to Case Thermal Resistance (Diode).67 C/W W T Package Weight g Torque Mounting Torque (TO-6 Package), - or M screw in lbf Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Pulse test: Pulse Width < 8μs, duty cycle < %. See Mil-Std-75 Method 7. is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC5) 5 E on is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD-. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 5-6 Rev D 6 -

3 Typical Performance Curves, COLLECTOR CURRENT (A), COLLECTOR CURRENT (A), COLLECTOR-TO-EMITTER VOLTAGE (V) , GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage. 5, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE, Output Characteristics ( ) 5μs PULSE TEST<.5 % DUTY CYCLE = 55 C 6 8 = 9A =.5A = 5 C = -55 C, GATE-TO-EMITTER VOLTAGE (V) FIGURE, Transfer Characteristics. 5μs PULSE TEST <.5 % DUTY CYCLE, COLLECTOR CURRENT (A), GATE-TO-EMITTER VOLTAGE (V), COLLECTOR-TO-EMITTER VOLTAGE (V) V V V APT8GA6LD 8 6 8, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE, Output Characteristics ( ) = V = V V = 8V GATE CHARGE (nc) FIGURE, Gate charge = 9A. 5μs PULSE TEST <.5 % DUTY CYCLE 5 5, Junction Temperature ( C) FIGURE 6, On State Voltage vs Junction Temperature 9V 8V 5V =.5A V GS(TH), THRESHOLD VOLTAGE (NORMALIZED) , JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature, DC COLLECTOR CURRENT (A) T C, Case Temperature ( C) FIGURE 8, DC Collector Current vs Case Temperature 5-6 Rev D 6 -

4 Typical Performance Curves t d(on), TURN-ON DELAY TIME (ns), RISE TIME (ns) TURN ON ENERGY LOSS (μj) E FIGURE 9, Turn-On Delay Time vs Collector Current =.7Ω, L = μh, = V 8 6 = V, or 5 C =.7Ω L = μh 6 8 E FIGURE, Current Rise Time vs Collector Current = V = +5V =.7Ω = 5 or 5 C, 6 8 E FIGURE, Turn-On Energy Loss vs Collector Current t d(off), TURN-OFF DELAY TIME (ns) E OFF, TURN OFF ENERGY LOSS (μj), FALL TIME (ns) = V =.7Ω L = μh 6 8 E FIGURE, Turn-Off Delay Time vs Collector Current E FIGURE, Current Fall Time vs Collector Current =5V, =5 C = V = +5V =.7Ω =5V, =5 C =.7Ω, L = μh, = V,, APT8GA6LD 6 8 E FIGURE, Turn-Off Energy Loss vs Collector Current 5-6 Rev D 6 - SWITCHING ENERGY LOSSES (μj) = V = +5V 9A 9A 7A 7A A A 5, GATE RESISTANCE (OHMS) FIGURE 5, Switching Energy Losses vs Gate Resistance SWITCHING ENERGY LOSSES (μj) = V = +5V = Ω 9A 9A 7A 7A A A , JUNCTION TEMPERATURE ( C) FIGURE 6, Switching Energy Losses vs Junction Temperature

5 Typical Performance Curves APT8GA6LD C ies C, CAPACITANCE (pf) C oes C res, COLLECTOR CURRENT (A) 5, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage., COLLECTOR-TO-EMITTER VOLTAGE FIGURE 8, Minimum Switching Safe Operating Area.5 Z θjc, THERMAL IMPEDANCE ( C/W) D = Rev D SINGLE PULSE Duty Factor D = t /t Peak = P DM x Z θjc +T C RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t t

6 APT8GA6LD APTDQ6 % Gate Voltage t d(on) 9% Collector Current V CC 5% % 5% Collector Voltage A Switching Energy D.U.T. Figure, Inductive Switching Test Circuit Figure, Turn-on Switching Waveforms and Definitions 9% t d(off) Gate Voltage Collector Voltage t f % Collector Current Switching Energy Figure, Turn-off Switching Waveforms and Definitions 5-6 Rev D 6 -

7 MAXIMUM RATINGS ULTRAFAST SOFT RECOVERY RECTIFIER DIODE STATIC ELECTRICAL CHARACTERISTICS DYNAMIC CHARACTERISTICS All Ratings: T C unless otherwise specifi ed. Symbol Characteristic / Test Conditions APT8GA6LD Unit (AV) Maximum Average Forward Current (T C = C, Duty Cycle =.5) (RMS) RMS Forward Current (Square wave, 5% duty) 6 SM Non-Repetitive Forward Surge Current ( = 5 C, 8. ms) Symbol Characteristic / Test Conditions Min Type Max Unit V F Forward Voltage = A. = 8A.5 = A,.7 Symbol Characteristic Test Conditions Min Typ Max Unit I t Reverse Recovery Time F = A, di F /dt = -A/μs, - rr - = V, ns t Reverse Recovery Time - rr 5 - = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr 5 - nc = V, T C Maximum Reverse Recovery Current - - Amps t Reverse Recovery Time - rr 6 - ns = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr 8 - nc = V, T C Maximum Reverse Recovery Current Amps t Reverse Recovery Time - rr 85 - ns = A, di F /dt = -A/μs Q Reverse Recovery Charge - rr 9 - nc = V, T C Maximum Reverse Recovery Current - - Amps Amps Volts.7 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t /t Peak = P DM x Z θjc +T C RECTANGULAR PULSE DURATION (seconds) FIGURE, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: 5-6 Rev D 6 - P DM t t

8 Dynamic Characteristics unless otherwise specified APT8GA6LD Q rr, REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) 8 = V 6 8A A 8 A = 75 C T J = -55 C V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/μs) Figure. Forward Current vs. Forward Voltage Figure 5. Reverse Recovery Time vs. Current Rate of Change 8 6 = V 8A A A, REVERSE RECOVERY CURRENT r, REVERSE RECOVERY TIME (A) (ns) = V A 8A A 5-6 Rev D di F /dt, CURRENT RATE OF CHANGE (A/μs) -di F /dt, CURRENT RATE OF CHANGE (A/μs) Figure 6. Reverse Recovery Charge vs. Current Rate of Change Figure 7, Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to A/μs) r Q rr Q rr Duty cycle =.5 = 75 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 8. Dynamic Parameters vs. Junction Temperature Figure 9. Maximum Average Forward Current vs. CaseTemperature , REVERSE VOLTAGE (V) Figure. Junction Capacitance vs. Reverse Voltage r (AV) (A)

9 Dynamic Characteristics unless otherwise specified APT8GA6LD V r +8V di F /dt Adjus t V D.U.T. μh r /Q rr Waveform PEARSON 878 CURRENT TRANSFORMER Figure. Diode Test Circuit - Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. - Maximum Reverse Recovery Current r - Reverse Recovery Time measured from zero crossing where diode current goes from positive to negative, to the point at Zer o 5.5 which the straight line through and.5, passes through zero. 5 Q rr - Area Under the Curve Defi ned by and t RR. Figure. Diode Reverse Recovery Waveform Definition TO-6 (L) Package Outline.6 (.8) 5. (.5).8 (.7). (.79) 9.5 (.768).5 (.87). (.).8 (.7) 5.79 (.8) 6. (.) Collector 5.8 (.) 6.9 (.) 9.8 (.78).9 (.8).9 (.9).69 (.6).8 (.9).76 (.).8 (.). (.5).59 (.).79 (.). (.8).8 (.5) 5.5 (.5) BSC -Plcs. Dimensions in Millimeters and (Inches).9 (.9).69 (.6) Gate Collector(Cathode) Emitter (Anode) 5-6 Rev D 6 -