HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE

Transcription

1 PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series are isolated near hermetic power modules which combine the latest IGBT and Soft Recovery Rectifier Technology. The module uses both high-speed and low Vce(sat) IGBT's packaged for ultra low thermal resistance junction to case. The G300HHCK12P2 power module consists of six IGBT's and six FRED's in a Phase- Leg or Half-Bridge configuration. Features: n Rugged, Lightweight near Hermetic Package with Integrated Power Terminal Cap n Gen IV IGBT Technology n Soft Recovery Rectifiers n AlSiC Baseplate and AIN Substrate n Ultra-Low Thermal Resistance n Zener Gate Protection n Very Low Conduction and Switching Loss n -55 C to +125 C Operating Temperature n Screening to meet the intent of MIL-PRF Class H n Short Circuit Capability n 2.0 Ohms Series Gate Resistor n High Altitude Operation, 85,000 Feet Above Sea Level at Rated Voltage Absolute Maximum Tj=25 C (unless otherwise specified) Parameter Symbol Value Units Collector-to-Emitter Voltage V CES 1200 Gate-to-Emitter Voltage V GE ±20 V Continuous Collector Tc = 25 C 450 I C Continuous Collector Tc = 100 C 300 A Isolation Voltage V ISOL 2500 V RMS /30/15

2 Electrical Tj = 25 C (unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Units Off Characteristics Collector Emitter Breakdown Voltage V CES V GE = 0V V Zero Gate Voltage Collector Current I CES V GE =0V, V CE = 1200V ma Gate Emitter Leakage Current I GES V GE = ±15V, V CE = 0V µa On Characteristics Gate Threshold Voltage V GE(TH) V CE = V GE, I C = 1.0mA Collector Emitter Saturation Voltage V CE(SAT) V GE = 15V, I C = 300A V Dynamic Characteristics Total Gate Charge Qg V CE = 600V, I C = 300A, V GE = 15V nc Input Capacitance C IES Output Capacitance C OES V GE = 0V, V CE = 25V, f = 1.0MHz nf Reverse Transfer Capacitance C RES Switching Inductive Load Characteristics Turn-On Delay Time td(on) ns Rise Time tr Turn-On Losses E on V CC = 600V, I C = 300A, V GE =15V mj Turn-Off Delay Time td(off) R G(on) = 20Ω, R G(off) =10Ω, L=100µH Fall Time tf ns Turn-Off Losses E off mj Diode Characteristics Forward Voltage V F I F = 300A V Reverse Recovery Charge Qrr µc Peak Reverse Recovery Current Irr V R =600V, I C =300A, di/dt =-800A/µs A Reverse Recovery Time trr ns 2

3 Electrical Tj = 125 C (unless otherwise specified) Parameter Symbol Test Conditions Min. Typ. Max. Units Off Characteristics Collector Emitter Breakdown Voltage V CES V GE = 0V V Zero Gate Voltage Collector Current I CES V GE =0V, V CE = 1200V ma Gate Emitter Leakage Current I GES V GE = ±15V, V CE = 0V µa On Characteristics Gate Threshold Voltage V GE(TH) V CE = V GE, I C = 1.0mA Collector Emitter Saturation Voltage V CE(SAT) V GE = 15V, I C = 300A V Diode Characteristics Forward Voltage V F I F = 300A V Thermal-Mechanical Specifications Parameter Symbol Min Max Units IGBT Thermal Resistance, Junction to Case, per Switch R thjc Diode Thermal Resistance, Junction to Case, per Switch Operating Junction Temperature Range T J Storage Temperature Range T STG Screw Torque - Mounting Screw Torque - Terminals Module Weight g C/W C T - 26 in-lbs Module Screening Test or Inspection MIL-STD-883 Comments Method Condition Internal Visual 2017 Temperature Cycle 1010 B 10 Cycles, -55 C to +125 C Mechanical Shock 2002 B 1500G, 0.5ms, 5 Times (Y1 direction only) Burn-in 1015 A C Final Electrical Test Group A, -55 C, +25 C, +125 C External Visual

4 Schematic 500 Maximum DC Collector Current (A) T C, Case Temperature ( C) Fig 1: Maximum Collector Current Vs Case Temperature 4

5 +Vge 90% Vge Vce 10% Vce 90% 5% td(off) tf t1+5µs Eoff = Vce ic dt Vce t1 dt t1 t2 Fig. 2 - Test Circuit for Measurement of E on, E off, t rr, Q rr, I rr, t d(on), t r, t d(off), t f Fig. 3 - Test Waveforms for Circuit of Fig. 2, Defining E off, t d(off), t f 10% +Vg GATE VOLTAGE D.U.T. +Vg trr trr Qrr id dt = tx 10% Vcc td(on) t1 Vce tr 90% 5% Vce Ipk t2 Eon = Vce ie dt dt Vce t1 t2 DUT VOLTAGE AND CURRENT Vpk tx 10% Vcc Irr DIODE REVERSE RECOVERY ENERGY 10% Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd Vc id dt dt = t3 t3 t4 Fig. 3 - Test Waveforms for Circuit of Fig. 2, Defining E on, t d(on), t r Fig. 4 - Test Waveforms for Circuit of Fig. 2, Defining E rec, t rr, Q rr, I rr 5

6 Case Outline and Dimensions - HiRel TM INT-A-Pak 2 Notes: 1) All dimensions are in inches 2) Unless otherwise specified, Tolerances.XX = ±0.01,.XXX = ± ) Dimension applies to Signal Terminals only. 4) Dimension applies to Power Terminals only. Part Numbering Nomenclature G 300 HH C K IGBT Module - Hirel Current Capability 300 = 300 Amps Circuit Configuration HH = Half Bridge Generation IGBT / FWD Configuration C = GEN 5 (NPT) / GEN 3 12 P2 H Screening Level P = Unscreened, 25 C Electrical Test ( Not intended for Qualification) H = Screened per MIL-PRF Package Type P2 = HiRel TM INT-A-Pak 2, 2.5" X 4.0" X 1.0" Voltage 12 = 1200V IGBT Speed / SC Capability K = Fast, SC Capable WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, El Segundo, California 90245, Tel: (310) IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) Visit us at for Sales contact information Data and specifications subject to change without notice. 03/