Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
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1 Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V I C = 25 A Tight parameter distribution Positive V CE(sat) temperature coefficient Low thermal resistance Soft and fastrecovery antiparallel diode G() C(2, TAB) Applications Industrial drives UPS Solar Welding E(3) Product status link STGW25M2DF3 NGE3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lowloss and the shortcircuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product summary Order code Marking Package Packing STGW25M2DF3 G25M2DF3 TO247 Tube DS3 Rev 3 June 28 For further information contact your local STMicroelectronics sales office.
2 Electrical ratings Electrical ratings Table. Absolute maximum ratings Symbol Parameter Value Unit V CES Collectoremitter voltage (V GE = V) 2 V I Continuous collector current at T C = 25 C 5 A C Continuous collector current at T C = C 25 A I CP () Pulsed collector current A V Gateemitter voltage ±2 V GE Transient gateemitter voltage ±3 V I Continuous forward current at T C = 25 C 5 A F Continuous forward current at T C = C 25 A I FP () Pulsed forward current A P TOT Total dissipation at T C = 25 C 375 W T STG Storage temperature range 55 to 5 C T J Operating junction temperature range 55 to 75 C. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junctioncase IGBT.4 C/W thjc Thermal resistance junctioncase diode.96 C/W R thja Thermal resistance junctionambient 5 C/W DS3 Rev 3 page 2/6
3 Electrical characteristics 2 Electrical characteristics T J = 25 C unless otherwise specified Table 3. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collectoremitter breakdown voltage V GE = V, I C = 2 ma 2 V V GE = 5 V, I C = 25 A V CE(sat) Collectoremitter saturation voltage V GE = 5 V, I C = 25 A, T J = 25 C V GE = 5 V, I C = 25 A, T J = 75 C V I F = 25 A V F Forward onvoltage I F = 25 A, T J = 25 C 2.95 V I F = 25 A, T J = 75 C.9 V GE(th) Gate threshold voltage V CE = V GE, I C = ma V I CES Collector cutoff current V GE = V, V CE = 2 V 25 µa I GES Gateemitter leakage current V CE = V, V GE = ±2 V ±25 na Table 4. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance 55 C oes Output capacitance V CE = 25 V, f = MHz, V GE = V 8 C res Reverse transfer capacitance 65 Q g Total gate charge V CC = 96 V, I C = 25 A, 85 Q ge Gateemitter charge V GE = to 5 V.5 Q gc Gatecollector charge (see Figure 29. Gate charge test circuit) 45.5 pf nc DS3 Rev 3 page 3/6
4 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turnon delay time 28 ns t r Current rise time 5 ns (di/dt) on t d(off) t f E () on Turnon current slope Turnoff delay time Current fall time Turnon switching energy V CE = 6 V, I C = 25 A, V GE = 5 V, R G = 5 Ω (see Figure 28. Test circuit for inductive load switching) A/µs ns ns mj E (2) off Turnoff switching energy.3 mj E ts Total switching energy 2.5 mj t d(on) Turnon delay time 28 ns t r Current rise time 7 ns (di/dt) on t d(off) t f E () on Turnon current slope Turnoff delay time Current fall time Turnon switching energy V CE = 6 V, I C = 25 A, V GE = 5 V, R G = 5 Ω, T J = 75 C (see Figure 28. Test circuit for inductive load switching) A/µs ns ns mj E (2) off Turnoff switching energy.9 mj E ts Total switching energy 3.5 mj t sc Shortcircuit withstand time V CC 6 V, V GE = 5 V, T Jstart 5 C µs. Including the reverse recovery of the diode 2. Including the tail of the collector current Table 6. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t rr Reverse recovery time 265 ns Q rr I rrm Reverse recovery charge Reverse recovery current I F = 25 A, V R = 6 V, V GE = 5 V, di/dt = A/µs.2 9 µc A di rr /dt Peak rate of fall of reverse (see Figure 28. Test circuit for recovery current during t b inductive load switching) 9 A/µs E rr Reverse recovery energy.22 µj t rr Reverse recovery time 585 ns Q rr Reverse recovery charge I F = 25 A, V R = 6 V, 5 µc I rrm Reverse recovery current V GE = 5 V, T J = 75 C, 3 A di/dt = A/µs di rr /dt Peak rate of fall of reverse recovery current during t (see Figure 28. Test circuit for b inductive load switching) 27 A/µs E rr Reverse recovery energy.75 µj DS3 Rev 3 page 4/6
5 Electrical characteristics (curves) 2. Electrical characteristics (curves) Figure. Power dissipation vs case temperature Figure 2. Collector current vs case temperature Ptot (W) 32 GIPD32496FSR VGE 5 V, TJ 75 C IC (A) 5 GIPD32499FSR VGE 5 V, TJ 75 C TC( C) 5 5 TC( C) Figure 3. Output characteristics (T J = 25 C) Figure 4. Output characteristics (T J = 75 C) IC (A) 8 VGE=5V GIPD32493FSR 3V V IC (A) 8 GIPD32499FSR VGE=5V 3V 6 6 V 4 9V 4 9V 2 7V 2 7V VCE(V) VCE(V) Figure 5. V CE(sat) vs junction temperature Figure 6. V CE(sat) vs collector current VCE(sat) (V) 3.2 VGE=5V GIPD324924FSR IC=5A VCE(sat) (V) 3.2 VGE=5V GIPD32433FSR Tj=75 C Tj=25 C IC=25A IC=2.5A Tj=4 C TC( C) IC(A) DS3 Rev 3 page 5/6
6 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency Figure 8. Safe operating area IC (A) GIPD32444FSR IC (A) GIPD3245FSR TC=8 C 6 TC= C µs 4 2 Rectangular current shape, (duty cycle=.5, Vcc= 6V Rg=5Ω, Vge=/5V, Tj=75 C) f(khz) Single pulse, Tc=25 C Tj<75 C, VGE=5V µs µs ms VCE(V) Figure 9. Transfer characteristics Figure. Diode V F vs forward current IC (A) 8 6 VCE = 8V Tj=25 C GIPD32459FSR VF (V) GIPD32423FSR Tj=4 C Tj=25 C 4 Tj=75 C Tj=75 C VGE(V) IC(A) Figure. Normalized V GE(th) vs junction temperature Figure 2. Normalized V (BR)CES vs junction temperature VGE(th) (norm). VCE=VGE IC=mA GIPD32435FSR V(BR)CES (norm).4 IC=2mA GIPD324322FSR TC( C) TC( C) DS3 Rev 3 page 6/6
7 Electrical characteristics (curves) Figure 3. Capacitance variations Figure 4. Gate charge vs gateemitter voltage C(pF) GIPD324335FSR Cies VGE(V) 6 VCC = 96 V IC = 25 A IG = ma GIPD32434FSR 2 f= MHz Coes 8 4 Cres. VCE(V) Qg(nC) Figure 5. Switching energy vs collector current Figure 6. Switching energy vs gate resistance E(mJ) 3.2 VCC=6V, VGE=5V Rg=5Ω, Tj=75 C GIPD324347FSR E(mJ) 2.6 VCC=6V, VGE=5V IC=25A, Tj=75 C GIPD3244FSR 2.4 Eoff 2.2 Eoff Eon.4 Eon IC(A) Rg(Ω) Figure 7. Switching energy vs junction temperature Figure 8. Switching energy vs collector emitter voltage E(mJ).8 VCC=6V, VGE=5V IC=25A, Rg=5Ω GIPD32448FSR E(mJ) 2.5 VGE=5V, Tj=75 C IC=25A, Rg=5Ω GIPD324422FSR Eoff 2.5 Eoff Eon Eon TJ( C) VCE(V) DS3 Rev 3 page 7/6
8 Electrical characteristics (curves) Figure 9. Shortcircuit time and current vs V GE Figure 2. Switching times vs collector current tsc(µs) 35 VCC 6V TJ 5 C tsc GIPD324425FSR Isc(A) Isc 4 t(ns) VCC=6V, VGE=5V Tj=75 C, Rg=5Ω GIPD324429FSR tf tdoff 25 tdon tr VGE(V) IC(A) Figure 2. Switching times vs gate resistance t(ns) tf VCC=6V, VGE=5V Tj=75 C, IC=25A GIPD324432FSR Figure 22. Reverse recovery current vs diode current slope Irrm (A) 48 VCC=6V, VGE=5V Tj=75 C, IF=25A GIPD324437FSR tdoff 4 tdon tr Rg(Ω) di/dt(a/µs) Figure 23. Reverse recovery time vs diode current slope trr (ns) 7 GIPD324439FSR Figure 24. Reverse recovery charge vs diode current slope Qrr (µc) 5.2 GIPD324442FSR VCC=6V, VGE=5V Tj=75 C, IF=25A di/dt(a/µs) VCC=6V, VGE=5V Tj=75 C, IF=25A di/dt(a/µs) DS3 Rev 3 page 8/6
9 Electrical characteristics (curves) Figure 25. Reverse recovery energy vs diode current slope Err (mj).9 GIPD324445FSR VCC=6V, VGE=5V Tj=75 C, IF=25A di/dt(a/µs) Figure 26. Thermal impedance for IGBT K ZthTO2T_A δ =.5 δ =.2 δ =. δ =.5 δ =.2 δ =. Single pulse t p (s) Figure 27. Thermal impedance for diode DS3 Rev 3 page 9/6
10 Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit G C A A L= µh k k E B B G C 3.3 µf D.U.T µf V CC k + R G E k k k AM5 4v AM55v Figure 3. Switching waveform Figure 3. Diode reverse recovery waveform 9% di/dt Q rr VG % t rr 9% I F t s t f VCE IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 9% % % I RRM I RRM % V RRM t dv/dt AM56v GADG872748SA DS3 Rev 3 page /6
11 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS3 Rev 3 page /6
12 TO247 package information 4. TO247 package information Figure 32. TO247 package outline 75325_9 DS3 Rev 3 page 2/6
13 TO247 package information Table 7. TO247 package mechanical data Dim. mm Min. Typ. Max. A A b..4 b b c.4.8 D E e L L L2 8.5 ØP ØR S DS3 Rev 3 page 3/6
14 Revision history Table 8. Document revision history Date Version Changes 22Apr24 Initial release. 3Oct24 2 8Jun28 3 Document status promoted from preliminary to production data. Updated all the document accordingly. Added Section 2.: Electrical characteristics (curves). Updated Section 4: Package mechanical data. The part number STGWA25M2DF3 has been moved to a separate datasheet, and the document has been updated accordingly. Updated features list on cover page. Updated Table. Absolute maximum ratings. Minor text changes DS3 Rev 3 page 4/6
15 Contents Contents Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits... 4 Package information TO247 package information... Revision history...4 DS3 Rev 3 page 5/6
16 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 28 STMicroelectronics All rights reserved DS3 Rev 3 page 6/6
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N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
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Silicon carbide Power MOSFET 1200 V, 65 A, 59 mω (typ., TJ=150 C) in an HiP247 package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction
More informationFeatures. Description. AM01475v1_Tab. Table 1: Device summary Order code Marking Package Packing STW240N10F7 240N10F7 TO-247 Tube
N-channel 100 V, 2.6 mω typ., 180 A, STripFET F7 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID 100 V 3.0 mω 180 A 1 2 3 Among the lowest RDS(on) on
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N-channel 800 V, 2.75 Ω typ., 2 A MDmesh K5 Power MOSFET in TO-220 and IPAK packages Datasheet - production data TAB Features Order code V DS RDS(on) max ID TAB IPAK 3 2 1 TO-220 1 2 3 STP3LN80K5 800 V
More informationAutomotive-grade N-channel 950 V, Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package. Features. Description.
Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW22N95K5 950 V 0.330 Ω 17.5
More informationN-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package. Features. Order code. Description. AM01475v1_Tab
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP200N3LL 30 V 2.4 mω 120 A 176.5 W Very low on-resistance
More informationFeatures. Description. AM01476v1. Table 1: Device summary Order code Marking Package Packaging STWA40N95K5 40N95K5 TO-247 Tube
STWA40N95K5 N-channel 950 V, 0.110 Ω typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STWA40N95K5 950 V 0.130 Ω 38
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STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 mω typ., 110 A STripFET II Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features Order code VDS RDS(on) max.
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF140N6F7 60 V 0.0035 Ω 70 A 33 W Among the
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STP5N80K5 5N80K5 TO-220 Tube
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP5N80K5 800 V 1.75 Ω 4 A Industry s lowest RDS(on) x area
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N-channel 500 V, 0.08 Ω typ., 45 A MDmesh Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID 500 V 0.1 Ω 45 A TO-247 1 3 2 100% avalanche tested High dv/dt
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N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
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N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low
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Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode
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Datasheet Nchannel 6 V, 15 mω typ., 25 A, MDmesh M6 Power MOSFET in a TO22FP package Features TO22FP D(2) 1 2 3 Order code V DS R DS(on) max. I D STF33N6M6 6 V 125 mω 25 A Reduced switching losses Lower
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFH18N60M2 18N60M2 TO-220FP wide creepage Tube
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH18N60M2 650 V 0.28 Ω 13 A Extremely
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
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N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel
N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.1 Ω 4 A Exceptional dv/dt capability
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N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W 1 3 2 Industry
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N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID 650 V 0.38 Ω 11 A Figure 1:
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STGB7NC60HD, STGF7NC60HD, STGP7NC60HD N-channel 14 A, 600 V, very fast IGBT with Ultrafast diode Datasheet production data Features Low on-voltage drop (V CE(sat) ) Off losses include tail current Losses
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STP5N05K5 N-channel 050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP5N05K5 050 V 3.5 Ω 3 A 85 W Worldwide best
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N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging. STW70N60M2 70N60M2 TO-247 Tube
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
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Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages TAB Features 3 1 2 D PAK TAB 1 2 3 TO-220FP Order code STB22NM60N V DS @ T jmax. R DS(on) max.
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10N60M2 10N60M2 TO-220FP Tube
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW70N60DM2 70N60DM2 TO-247 Tube
N-channel 600 V, 0.037 Ω typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW70N60DM2 600 V 0.042 Ω 66 A 446 W TO-247 1 3
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N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest
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N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
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Datasheet N-channel 9 V,.21 Ω typ., 2 A MDmesh K5 Power MOSFET in a TO 22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on ) max. I D STF2N9K5 9 V.25 Ω 2 A Industry s lowest R DS(on) x area
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N-channel 650 V, 0.087 Ω typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D STW40N65M2 650 V 0.099 Ω 32 A TO-247 1 3 2 Extremely
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N-channel 650 V, 0.058 Ω typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW56N65DM2 650 V 0.065 Ω 48 A 360 W TO-247 1 3
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N-channel 950 V, 1 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF6N95K5 950 V 1.25 Ω 9 A 25 W TO-220FP 1 2 3 Figure
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