STGB40V60F, STGP40V60F, STGW40V60F

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1 STGB40V60F, STGP40V60F, STGW40V60F 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data TAB 1 D 2 PAK 3 TAB TO-247 Figure 1. Internal schematic diagram C or TAB TO Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching off Low saturation voltage: V CE(sat) = 1.8 V I C = 40 A Tight parameters distribution Safe paralleling Low thermal resistance Lead free package Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters G E Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGB40V60F GB40V60F D 2 PAK Tape and reel STGP40V60F GP40V60F TO-220 Tube STGW40V60F GW40V60F TO-247 Tube June 2013 DocID Rev 1 1/19 This is information on a product in full production. 19

2 Contents STGB40V60F, STGP40V60F, STGW40V60F Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /19 DocID Rev 1

3 STGB40V60F, STGP40V60F, STGW40V60F Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 C 80 A I C Continuous collector current at T C = 100 C 40 A I (1) CP Pulsed collector current 160 A V GE Gate-emitter voltage ±20 V P TOT Total dissipation at T C = 25 C 283 W T STG Storage temperature range - 55 to 150 C T J Operating junction temperature - 55 to 175 C 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R thjc Thermal resistance junction-case IGBT 0.53 C/W R thja Thermal resistance junction-ambient 50 C/W DocID Rev 1 3/19

4 Electrical characteristics STGB40V60F, STGP40V60F, STGW40V60F 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 600 V V GE = 15 V, I C = 40 A V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 40 A T J = 125 C V GE = 15 V, I C = 40 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES Collector cut-off current (V GE = 0) V CE = 600 V 25 μa I GES Gate-emitter leakage current (V CE = 0) V GE = ± 20 V 250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance pf C oes Output capacitance V CE = 25 V, f = 1 MHz, pf C res V GE = 0 Reverse transfer capacitance pf Q g Total gate charge nc Q ge Gate-emitter charge V CC = 480 V, I C = 40 A, V GE = 15 V, see Figure nc Q gc Gate-collector charge nc 4/19 DocID Rev 1

5 STGB40V60F, STGP40V60F, STGW40V60F Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) (1) t r (1) Turn-on delay time ns Current rise time ns (di/dt) (1) on Turn-on current slope A/μs V CE = 400 V, I C = 40 A, t d ( off ) Turn-off delay time ns R G = 10 Ω, V GE = 15 V, t f Current fall time ns see Figure 22 E (1) on Turn-on switching losses μj E (2) off Turn-off switching losses μj E ts Total switching losses μj (1) t d(on) Turn-on delay time ns t (1) r Current rise time ns (1) (di/dt) on Turn-on current slope A/μs t d ( off ) t f Turn-off delay time Current fall time V CE = 400 V, I C = 40 A, R G = 10 Ω, V GE = 15 V, T J = 175 C, see Figure ns ns (1) E on Turn-on switching losses μj E (2) off Turn-off switching losses μj E ts Total switching losses μj 1. Switching-on times and energy have been calculated applying the STGW60V60DF's co-pack diode in the high side of the test circuit in Figure 22. Both IGBT and diode are at the same temperature. Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. 2.1 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature Figure 3. Collector current vs. case temperature Ptot (W) 250 AM17385v1 IC (A) AM17386v TC( C) TC( C) DocID Rev 1 5/19

6 Electrical characteristics STGB40V60F, STGP40V60F, STGW40V60F Figure 4. Output characteristics (T J =25 C) Figure 5. Output characteristics (T J =175 C) IC (A) VGE=15V 11V 13V 9V AM17387v1 IC (A) VGE=15V 13V 11V 9V AM17388v V VCE(V) VCE(V) Figure 6. V CE(sat) vs. junction temperature Figure 7. V CE(sat) vs. collector current VCE(sat) (V) VGE=15V IC=80A AM17389v1 VCE(sat) (V) VGE=15V Tj=175 C AM17390v IC=40A IC=20A Tj=25 C Tj=-40 C TC( C) IC(A) Figure 8. Collector current vs. switching frequency Figure 9. Forward bias safe operating area IC (A) AM17391v1 IC (A) AM17392v TC=80 C TC=100 C rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=10Ω, Vge=0/15V, Tj=175 C) Single pulse, Tc=25 C Tj<175 C, VGE=15V 10μs 100μs 1ms f(khz) VCE(V) 6/19 DocID Rev 1

7 STGB40V60F, STGP40V60F, STGW40V60F Electrical characteristics Figure 10. Normalized V GE(th) vs junction temperature Figure 11. Normalized V (BR)CES vs. junction temperature VGE(th) (norm) 1.0 VCE=VGE IC=1mA AM17395v1 V(BR)CES (norm) 1.1 IC=2mA AM17396v TC( C) TC( C) Figure 12. Capacitance variations Figure 13. Gate charge vs. gate-emitter voltage C(pF) AM17397v1 VGE(V) AM17398v Cies Cres Coes VCE(V) Figure 14. Switching losses vs. collector current Qg(nC) Figure 15. Switching losses vs. gate resistance E(μJ) 2800 VCC=400V, VGE=15V Rg=10Ω, Tj=175 C Eon AM17399v1 E(μJ) 2300 VCC=400V, VGE=15V IC=40A, Tj=175 C Eon AM17400v Eoff Eoff IC(A) Rg(Ω) DocID Rev 1 7/19

8 Electrical characteristics STGB40V60F, STGP40V60F, STGW40V60F Figure 16. Switching losses vs. junction temperature Figure 17. Switching losses vs. collector emitter voltage E(μJ) 1300 VCC=400V, VGE=15V IC=40A, Rg=10Ω Eon AM17401v1 E(μJ) 1600 VGE=15V, Tj=175 C IC=40A, Rg=10Ω Eon AM17402v Eoff TJ( C) Figure 18. Switching times vs. collector current 800 Eoff VCE(V) Figure 19. Switching times vs. gate resistance t(ns) VCC=400V, VGE=15V Tj=175 C, Rg=10Ω tdoff AM17403v1 t(ns) 1000 VCC=400V VGE=15V Tj=175 C IC=40A AM17404v1 100 tdon 100 tdoff tdon tr tr tf tf IC(A) Figure 20. Transfer characteristics Rg(Ω) Figure 21. Thermal data IC (A) AM17393v1 Tj=-40 C Tj=175 C Tj=25 C 8 10 VGE(V) K 10-1 δ= Single pulse Zth=k Rthj-c δ=tp/t tp(s) tp t ZthTO2T_B 8/19 DocID Rev 1

9 STGB40V60F, STGP40V60F, STGW40V60F Test circuits 3 Test circuits Figure 22. Test circuit for inductive load switching Figure 23. Gate charge test circuit AM01504v1 AM01505v1 Figure 24. Switching waveform 90% VG 10% 90% VCE Tr(Voff) 10% Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 10% AM01506v1 DocID Rev 1 9/19

10 Package mechanical data STGB40V60F, STGP40V60F, STGW40V60F 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Table 7. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V /19 DocID Rev 1

11 STGB40V60F, STGP40V60F, STGW40V60F Package mechanical data Figure 25. D²PAK (TO-263) drawing _T Figure 26. D²PAK footprint (a) Footprint a. All dimension are in millimeters DocID Rev 1 11/19

12 Package mechanical data STGB40V60F, STGP40V60F, STGW40V60F Table 8. TO-220 type A mechanical data Dim. mm Min. Typ. Max. A b b c D D E e e F H J L L L L P Q /19 DocID Rev 1

13 STGB40V60F, STGP40V60F, STGW40V60F Package mechanical data Figure 27. TO-220 type A drawing DocID Rev 1 13/19

14 Package mechanical data STGB40V60F, STGP40V60F, STGW40V60F Table 9. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c D E e L L L P R S /19 DocID Rev 1

15 STGB40V60F, STGP40V60F, STGW40V60F Package mechanical data Figure 28. TO-247 drawing _G DocID Rev 1 15/19

16 Packaging mechanical data STGB40V60F, STGP40V60F, STGW40V60F 5 Packaging mechanical data Table 10. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W /19 DocID Rev 1

17 STGB40V60F, STGP40V60F, STGW40V60F Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 REEL DIMENSIONS Figure 30. Reel 40mm min. T Access hole At slot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID Rev 1 17/19

18 Revision history STGB40V60F, STGP40V60F, STGW40V60F 6 Revision history Table 11. Document revision history Date Revision Changes 04-Jun Initial release. 18/19 DocID Rev 1

19 STGB40V60F, STGP40V60F, STGW40V60F Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America DocID Rev 1 19/19

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STGW60V60F GW60V60F TO-247 Tube TO-247 1 2 3 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series Maximum junction temperature: T J = 175 C Tail-less switching off