STGW60H65FB STGWT60H65FB
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1 STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail current V CE(sat) = 1.6 V I C = 60 A TO TO-3P Tight parameters distribution Safe paralleling Low thermal resistance Applications Photovoltaic inverters Figure 1. Internal schematic diagram High frequency converters G (1) C (2, TAB) E (3) Description These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW60H65FB GW60H65FB TO-247 Tube STGWT60H65FB GWT60H65FB TO-3P Tube April 2015 DocID Rev 4 1/16 This is information on a product in full production. 16
2 Contents STGW60H65FB, STGWT60H65FB Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curve) Test circuits Package information TO-247 package information TO-3P package information Revision history /16 DocID Rev 4
3 STGW60H65FB, STGWT60H65FB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 650 V I C Continuous collector current at T C = 100 C 60 Continuous collector current at T C = 25 C 80 (1) A I (2) CP Pulsed collector current 240 A V GE Gate-emitter voltage ±20 V P TOT Total dissipation at T C = 25 C 375 W T stg Storage temperature -55 to 150 T j Operating junction temperature -55 to 175 C 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter Value Unit R thj-c Thermal resistance junction-case 0.4 R thj-a Thermal resistance junction-ambient 50 C/W DocID Rev 4 3/16
4 Electrical characteristics STGW60H65FB, STGWT60H65FB 2 Electrical characteristics T J = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 2 ma 650 V V GE = 15 V, I C = 60 A V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 60 A T J = 125 C V GE = 15 V, I C = 60 A T J = 175 C V GE(th) Gate threshold voltage V CE = V GE, I C = 1 ma V I CES I GES Collector cut-off current (V GE = 0) Gate-emitter leakage current (V CE = 0) V CE = 650 V 25 µa V GE = ± 20 V ±250 na V Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit C ies Input capacitance C oes Output capacitance V CE = 25 V, f = 1 MHz, C res V GE = 0 Reverse transfer capacitance Q g Total gate charge Q ge Gate-emitter charge V CC = 520 V, I C = 60 A, V GE = 15 V, see Figure Q gc Gate-collector charge pf nc 4/16 DocID Rev 4
5 STGW60H65FB, STGWT60H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - 66 ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs V CE = 400 V, I C = 60 A, t d(off) Turn-off delay time 210 ns R G = 10 Ω, V GE = 15 V, t f Current fall time ns see Figure 22 E (1) on Turn-on switching loss µj E off (2) Turn-off switching loss µj E ts Total switching loss µj t d(on) Turn-on delay time t d(off) Turn-off delay time V CE = 400 V, I C = 60 A, 242 ns t f Current fall time R G = 10 Ω, V GE = 15 V, T J = 175 C, see Figure ns (1) E on Turn-on switching loss µj 1. Energy loss includes reverse recovery of the external diode. The diode is the same as the co-packaged STGW60H65DFB. 2. Turn-off loss also includes the tail of the collector current ns t r Current rise time ns (di/dt) on Turn-on current slope A/µs E off (2) Turn-off switching loss µj E ts Total switching loss µj DocID Rev 4 5/16
6 Electrical characteristics STGW60H65FB, STGWT60H65FB 2.1 Electrical characteristics (curve) Figure 2. Output characteristics (T J = 25 C) Figure 3. Output characteristics (T J = 175 C) Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature IC (A) 80 GIPD FSR VGE = 15V, TJ = 175 C TC( C) Figure 6. Power dissipation vs. case temperature Figure 7. V CE(sat) vs. junction temperature Ptot (W) GIPD FSR VCE(sat) (V) 2.6 VGE= 15V GIPD FSR IC= 120A IC= 60A VGE = 15V, TJ = 175 C IC= 30A TC( C) Tj( C) 6/16 DocID Rev 4
7 STGW60H65FB, STGWT60H65FB Electrical characteristics Figure 8. V CE(sat) vs. collector current VCE(sat) (V) VGE= 15V TJ= 175 C GIPD FSR TJ= 25 C TJ= -40 C IC(A) Figure 10. Normalized V (BR)CES vs. junction temperature Figure 9. Forward bias safe operating area Figure 11. Normalized V GE(th) vs. junction temperature V(BR)CES (norm) 1.1 GIPD FSR VGE(th) (norm) IC= 1mA GIPD FSR IC= 2mA TJ( C) Figure 12. Gate charge vs. gate-emitter voltage TJ( C) Figure 13. Switching loss vs temperature VGE (V) 14 VCC= 520V, IC= 60A Ig= 1mA GIPD FSR E (μj) 2600 VCC= 400V, VGE= 15V Rg= 10Ω, IC= 60A GIPD FSR EON EOFF Qg(nC) TJ( C) DocID Rev 4 7/16
8 Electrical characteristics STGW60H65FB, STGWT60H65FB Figure 14. Switching loss vs gate resistance E(μJ) 2900 GIPD FSR EON Figure 15. Switching loss vs collector current E (μj) VCC= 400V, VGE= 15V Rg= 10Ω, TJ= 175 C GIPD FSR 2100 EOFF EON EOFF VCC = 400V, VGE = 15V IC = 60A, TJ = 175 C RG(Ω) Figure 16. Switching loss vs collector emitter voltage IC(A) Figure 17. Switching times vs collector current E (μj) 4300 TJ= 175 C, VGE= 15V Rg= 10Ω, IC= 60A GIPD FSR EON t (ns) tdoff GIPD FSR tdon EOFF 10 tr tf VCE(V) Figure 18. Switching times vs gate resistance TJ= 175 C, VGE= 15V Rg= 10Ω, VCC= 400V IC(A) Figure 19. Capacitance variations t (ns) TJ= 175 C, VGE= 15V IC= 60A, VCC= 400V GIPD FSR C(pF) GIPD FSR f = 1 MHz tdoff Cies tdon tr tf 100 Coes Cres Rg(Ω) VCE(V) 8/16 DocID Rev 4
9 STGW60H65FB, STGWT60H65FB Electrical characteristics Figure 20. Collector current vs. switching frequency Figure 21. Thermal impedance Ic (A) GIPD FSR K d=0.5 ZthTO2T_A 100 Tc=80 C Tc=100 C rectangular current shape, (duty cycle=0.5, V CC = 400V, R G=10 Ω, V GE = 0/15 V, T J =175 C) f (khz) Single pulse tp (s) DocID Rev 4 9/16
10 Test circuits STGW60H65FB, STGWT60H65FB 3 Test circuits Figure 22. Test circuit for inductive load switching Figure 23. Gate charge test circuit k k k k k k AM01504v1 AM01505v1 Figure 24. Switching waveform 90% VG 10% 90% VCE Tr(Voff) 10% Tcross 90% IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 10% AM01506v1 10/16 DocID Rev 4
11 STGW60H65FB, STGWT60H65FB Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 25. TO-247 package outline _H DocID Rev 4 11/16
12 Package information STGW60H65FB, STGWT60H65FB Table 7. TO-247 mechanical data Dim. mm. Min. Typ. Max. A A b b b c D E e L L L P R S /16 DocID Rev 4
13 STGW60H65FB, STGWT60H65FB Package information 4.2 TO-3P package information Figure 26. TO-3P package outline _B DocID Rev 4 13/16
14 Package information STGW60H65FB, STGWT60H65FB Table 8. TO-3P mechanical data Dim. mm Min. Typ. Max. A A A b b b c D D E E E e L L L øp øp Q Q /16 DocID Rev 4
15 STGW60H65FB, STGWT60H65FB Revision history 5 Revision history Table 9. Document revision history Date Revision Changes 30-Aug Initial release. 28-Feb Updated title and features in cover page. 09-Jan Apr Updated features in cover page, Table 2: Absolute maximum ratings, Table 4: Static characteristics and Table 6: Switching characteristics (inductive load). Updated Figure 5: Collector current vs. case temperature, Figure 6: Power dissipation vs. case temperature, Figure 8: V CE(sat) vs. collector current, Figure 17: Switching times vs collector current, Figure 18: Switching times vs gate resistance and Figure 19: Capacitance variations. Added Figure 20: Collector current vs. switching frequency. Updated Section 4: Package information. Minor text changes. Text edits throughout document Updated Table 2: Absolute maximum ratings Updated Table 4: Static characteristics Updated Table 6: Switching characteristics (inductive load) Updated Section 2.1: Electrical characteristics (curve). DocID Rev 4 15/16
16 STGW60H65FB, STGWT60H65FB IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 16/16 DocID Rev 4
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N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
More informationAutomotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL120N4F6AG 40 V 3.6 mω 55 A
More informationObsolete Product(s) - Obsolete Product(s) STGB19NC60K STGP19NC60K 20 A V - short circuit rugged IGBT Features Applications
STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (V CE(sat) ) Low C res / C ies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
More informationP-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D
Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low
More informationSTS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order codes Marking Package Packaging. STW70N60M2 70N60M2 TO-247 Tube
N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
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1200 V, 40 A trench gate field-stop M series low-loss IGBT die in D7 packing Datasheet - production data Features 10 µs of short-circuit withstand time Low VCE(sat) = 1.85 V (typ.) @ IC = 40 A Positive
More informationFeatures. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STP18N60DM2 18N60DM2 TO-220 Tube
N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP18N60DM2 600 V 0.295 Ω 12 A Fast-recovery body diode
More informationN-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package. Features. Description
N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD90NS3LLH7 30 V 3.4 mω 80
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel
N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.1 Ω 4 A Exceptional dv/dt capability
More informationFeatures. Description. AM15810v1. Table 1: Device summary Order code Marking Package Packing STL8N6F7 8N6F7 PowerFLAT 3.3x3.
N-channel 60 V, 0.019 Ω typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL8N6F7 60 V 0.023 Ω 8 A 1 2 3 4 Among the
More informationP-channel -30 V, 0.01 Ω typ., A, STripFET H6 Power MOSFET in an SO-8 package. Features. Description
P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package Datasheet - production data Features Order code VDS RDS(on) max ID STS10P3LLH6-30 V 0.012 Ω -12.5 A Very low on-resistance
More informationN-channel 100 V, Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package. Features. Description. Table 1.
N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package Features Datasheet production data Order code V DS R DS(on)max I D P TOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
More informationPrerelease Product(s) - Prerelease Product(s)
N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube
N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STP5N80K5 5N80K5 TO-220 Tube
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP5N80K5 800 V 1.75 Ω 4 A Industry s lowest RDS(on) x area
More informationN-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT
More informationSTGE200NB60S. N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
N-channel 150A - 600V - ISOTOP Low drop PowerMESH IGBT General features TYPE V CES V CE(sat) (typ.) I C T C 600V 1.2V 1.3V 150A 200A 100 C 25 C High input impedance (voltage driven) Low on-voltage drop
More informationAutomotive-grade N-channel 400 V, Ω typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package. Features. Description. Table 1: Device summary
Automotive-grade N-channel 400 V, 0.063 Ω typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP45N40DM2AG 400 V 0.072 Ω 38
More informationN-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10
More informationFeatures. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
More informationN-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK. Order code V DS R DS(on ) max. I D
Datasheet N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK package Features TAB DPAK D(2, TAB) 2 1 3 Order code V DS R DS(on ) max. I D STD80N6F7 60 V 8.0 mω 40 A Among the lowest R
More informationN-channel 100 V, 9.0 mω typ., 110 A STripFET II Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features. Description
STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 mω typ., 110 A STripFET II Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features Order code VDS RDS(on) max.
More informationAutomotive-grade dual N-channel 60 V, Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package. Features. Description. Table 1.
Automotive-grade dual N-channel 60 V, 0.035 Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package Features Datasheet - production data Order code V DS R DS(on) max. I D STS5DNF60L 60 V 0.045 Ω 5 A AEC-Q101
More informationSTP3LN80K5, STU3LN80K5
N-channel 800 V, 2.75 Ω typ., 2 A MDmesh K5 Power MOSFET in TO-220 and IPAK packages Datasheet - production data TAB Features Order code V DS RDS(on) max ID TAB IPAK 3 2 1 TO-220 1 2 3 STP3LN80K5 800 V
More informationN-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel
P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code VDS RDS(on) max ID STR1P2UH7 20 V 0.1 Ω @ 4.5 1.4 A Very low on-resistance
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel
P-channel 20 V, 0.087 Ω typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDS RDS(on) max ID STT3P2UH7 20 V 0.1 Ω @ 4.5 3 A SOT23-6L Very low on-resistance
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35 A, 600 V ultra fast IGBT Features Improved E off at elevated temperature Minimal tail current Low conduction losses V CE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel
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N-channel 600 V, 0.076 Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP D²PAK
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STL140N6F7 140N6F7 PowerFLAT 5x6 Tape and reel
N-channel 60 V, 2.4 mω typ., 140 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL140N6F7 60 V 2.8 mω 140 A 125 W Among
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STP5N05K5 N-channel 050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP5N05K5 050 V 3.5 Ω 3 A 85 W Worldwide best
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STD20NF06LAG D20N6LF6 DPAK Tape and Reel
Automotive-grade N-channel 60 V, 32 mω typ., 24 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD20NF06LAG 60 V 40 mω 24 A 60 W AEC-Q101
More informationAutomotive-grade N-channel 950 V, Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package. Features. Description.
Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW22N95K5 950 V 0.330 Ω 17.5
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW56N65DM2 56N65DM2 TO-247 Tube
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW56N65DM2 650 V 0.065 Ω 48 A 360 W TO-247 1 3
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Datasheet N-channel 6 V, 61 mω typ., 39 A, MDmesh M6 Power MOSFET in a TO 247 package Features Order code V DS R DS(on) max. I D STW48N6M6 6 V 69 mω 39 A TO-247 D(2, TAB) 1 3 2 Reduced switching losses
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packaging STQ2LN60K3-AP 2LN60K3 TO-92 Ammopack
N-channel 600 V, 4 Ω typ., 0.6 A MDmesh K3 Power MOSFET in a TO-92 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STQ2LN60K3-AP 600 V 4.5 Ω 0.6 A 2.5 W 1 TO-92 ammopack
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.200 Ω 18 A TO-220FP Fast-recovery body
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STF100N6F7 100N6F7 TO-220FP Tube
N-channel 60 V, 4.6 mω typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF100N6F7 60 V 5.6 mω 46 A 25 W Figure 1.
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N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
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