STGW40H120DF2, STGWA40H120DF2

Transcription

1 STGW4H12DF2, STGWA4H12DF2 Trench gate field-stop IGBT, H series 12 V, 4 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V IC = 4 A 5 μs minimum short circuit withstand time at TJ=15 C Safe paralleling Very fast recovery antiparallel diode Low thermal resistance Figure 1: Internal schematic diagram Applications Uninterruptible power supply Welding machines Photovoltaic inverters Power factor correction High frequency converters Table 1: Device summary Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code Marking Package Packaging STGW4H12DF2 G4H12DF2 TO-247 Tube STGWA4H12DF2 G4H12DF2 TO-247 long leads Tube June 216 DocID23753 Rev 5 1/17 This is information on a product in full production.

2 Contents STGW4H12DF2, STGWA4H12DF2 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information TO-247 package information TO-247 long leads package information Revision history /17 DocID23753 Rev 5

3 STGW4H12DF2, STGWA4H12DF2 Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = ) 12 V IC Continuous collector current at TC = 25 C 8 A IC Continuous collector current at TC = 1 C 4 A ICP (1) Pulsed collector current 16 A VGE Gate-emitter voltage ±2 V VGE Transient gate-emitter voltage (tp 1 μs, D.1) ±3 V IF Continuous forward current at TC = 25 C 8 A IF Continuous forward current at TC = 1 C 4 A IFP (1) Pulsed forward current 16 A PTOT Total dissipation at TC = 25 C 468 W TSTG Storage temperature range -55 to 15 C TJ Operating junction temperature range -55 to 175 C Notes: (1) Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT.32 C/W RthJC Thermal resistance junction-case diode 1.3 C/W RthJA Thermal resistance junction-ambient 5 C/W DocID23753 Rev 5 3/17

4 Electrical characteristics STGW4H12DF2, STGWA4H12DF2 2 Electrical characteristics TC = 25 C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES VCE(sat) VF Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = V, IC = 2 ma 12 V VGE = 15 V, IC = 4 A VGE = 15 V, IC = 4 A, TJ = 125 C VGE = 15 V, IC = 4 A, TJ = 175 C IF = 4 A IF = 4 A, TJ = 125 C 3.5 IF = 4 A, TJ = 175 C 2.8 VGE(th) Gate threshold voltage VCE = VGE, IC = 2 ma V ICES Collector cut-off current VGE = V, VCE = 12 V 25 µa IGES Gate-emitter leakage current VCE = V, VGE = ±2 V ±25 na V V Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance Coes Output capacitance VCE= 25 V, f = 1 MHz, VGE = V Reverse transfer Cres capacitance Qg Total gate charge VCC = 96 V, IC = 4 A, Qge Gate-emitter charge VGE = 15 V (see Figure 3: " Qgc Gate-collector charge Gate charge test circuit") pf nc 4/17 DocID23753 Rev 5

5 STGW4H12DF2, STGWA4H12DF2 Table 6: IGBT switching characteristics (inductive load) Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time 18 - ns tr Current rise time 37 - ns (di/dt)on Turn-on current slope A/µs VCE = 6 V, IC = 4 A, td(off) Turn-off-delay time VGE = 15 V, RG = 1 Ω ns tf Current fall time (see Figure 31: " Switching 83 - ns waveform") Eon (1) Turn-on switching energy 1 - mj Eoff (2) Turn-off switching energy mj Ets Total switching energy mj td(on) Turn-on delay time 36 - ns tr Current rise time 2 - ns (di/dt)on Turn-on current slope VCE = 6 V, IC = 4 A, A/µs VGE = 15 V, RG = 1 Ω td(off) Turn-off-delay time ns TJ = 175 C tf Current fall time (see Figure 31: " Switching 19 - ns Eon (1) Turn-on switching energy waveform" ) mj Eoff (2) Turn-off switching energy mj Ets Total switching energy mj tsc Notes: Short-circuit withstand time (1) Including the reverse recovery of the diode. (2) Including the tail of the collector current. VCC = 6 V, VGE = 15 V, TJstart = 15 C 5 - µs Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ns Qrr Irrm Reverse recovery charge Reverse recovery current IF = 4 A, VR = 6 V, VGE = 15 V µc A dirr/dt (see Figure 31: " Switching Peak rate of fall of reverse waveform") di/dt = 5 A/µs recovery current during tb - 46 A/µs Err Reverse recovery energy -.38 mj trr Reverse recovery time ns Qrr Irrm Reverse recovery charge Reverse recovery current IF = 4 A, VR = 6 V, VGE = 15 V TJ = 175 C µc A dirr/dt (see Figure 31: " Switching Peak rate of fall of reverse waveform") di/dt = 5 A/µs recovery current during tb - 17 A/µs Err Reverse recovery energy -.94 mj DocID23753 Rev 5 5/17

6 Electrical characteristics 2.2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Ptot (W) GIPG FSR V GE 15V, T J 175 C STGW4H12DF2, STGWA4H12DF2 Figure 3: Collector current vs. case temperature IC (A) GIPG FSR VGE 15V, TJ 175 C TC( C) TC( C) Figure 4: Output characteristics (TJ = 25 C) IC GIPG FSR (A) 13V 14 VGE=15V 11V 12 1 Figure 5: Output characteristics (TJ = 175 C) GIPG FSR IC (A) 14 VGE=15V 13V 12 11V V 8 6 9V V 2 7V VCE(V) VCE(V) Figure 6: VCE(sat) vs. junction temperature GIPG FSR VCE(sat) (V) IC= 8A VGE= 15V 3.4 Figure 7: VCE(sat) vs. collector current GIPG RV VCE(sat) (V) 5. VGE= 15V TJ= 175 C IC= 4A TJ= 25 C 2.2 IC= 2A 2.6 TJ= - 4 C TJ( C) IC(A) 6/17 DocID23753 Rev 5

7 STGW4H12DF2, STGWA4H12DF2 Figure 8: Collector current vs. switching frequency Ic[A] Tc=1 C rectangular current shape, (duty cycle=.5, V CC = 6V, R G=1 Ω, V GE =/15 V, T J =175 C) 1 1 Tc=8 C GIPG FSR f [khz] Electrical characteristics Figure 9: Forward bias safe operating area IC (A) Single pulse Tc= 25 C, TJ<= 175 C VGE= 15V GIPG FSR 1 µs 1 µs 1 µs 1 ms VCE(V) Figure 1: Transfer characteristics GIPG FSR IC (A) 14 VCE=1V Figure 11: Diode VF vs. forward current 12 1 TJ=25 C 8 6 TJ=175 C VGE(V) Figure 12: Normalized VGE(th) vs. junction temperature VGE(th) (norm) GIPG FSR IC= 2mA VCE= VGE Figure 13: Normalized V(BR)CES vs. junction temperature GIPG FSR V(BR)CES (norm) 1.6 IC= 2mA TJ( C) TJ( C) DocID23753 Rev 5 7/17

8 Electrical characteristics Figure 14: Capacitance variations GIPG RV C (pf) Cies f=1 MHz,VGE=V 1 STGW4H12DF2, STGWA4H12DF2 Figure 15: Gate charge vs. gate-emitter voltage V GE (V) V CC I C I G 4A 1mA GIPG RV 9 1 Coes 6 Cres VCE(V) Qg(nC) Figure 16: Switching energy vs. collector current E (µj) VCC = 6V, VGE = 15V, RG = 1Ω, TJ = 175 C EOFF 2 4 GIPG FSR EON 6 8 IC(A) Figure 17: Switching energy vs. gate resistance E (µj) EOFF GIPG FSR VCC = 6 V, VGE = 15 V, IC = 4 A, TJ = 175 C 3 4 EON RG(Ω) Figure 18: Switching energy vs. temperature E (µj) VCC= 6V, VGE= 15V, RG= 1Ω, IC= 4A EOFF 1 15 GIPG FSR EON TJ( C) Figure 19: Switching energy vs. collector emitter voltage E (µj) TJ= 175 C, VGE= 15V, RG= 1Ω, IC= 4A EOFF EON GIPG FSR VCE(V) 8/17 DocID23753 Rev 5

9 STGW4H12DF2, STGWA4H12DF2 Figure 2: Short-circuit time and current vs. t sc 3 (µs) 26 t SC VGE V CC 6 V T J 15 C GIPG RV Isc (A) I SC 32 Electrical characteristics Figure 21: Switching times vs. collector current t (ns) TJ= 175 C, VGE= 15V, RG= 1Ω, VCC= 6V GIPG FSR tf tdoff tdon tr VGE(V) IC(A) Figure 22: Switching times vs. gate resistance t (ns) TJ= 175 C, VGE= 15V, IC= 4A, VCC= 6V GIPG FSR tdoff Figure 23: Reverse recovery current vs. diode current slope Irm (A) 3 IF = 4A, VCC = 6V, VGE = 15V GIPG FSR 1 tdon tf 25 2 TJ=175 C 1 tr RG(Ω) di/dt(a/µs) Figure 24: Reverse recovery time vs. diode current slope trr (ns) IF = 4A, VCC = 6V, VGE = 15V GIPG FSR TJ =175 C di/dt(a/µs) Figure 25: Reverse recovery charge vs. diode current slope Qrr (nc) IF = 4A, VCC = 6V, VGE = 15V 4 TJ =175 C GIPG FSR 16 di/dt(a/µs) DocID23753 Rev 5 9/17

10 Electrical characteristics Err (µj) STGW4H12DF2, STGWA4H12DF2 Figure 26: Reverse recovery energy vs. diode current slope 14 GIPG FSR IF = 4A, VCC = 6V, VGE = 15V TJ =175 C di/dt(a/µs) Figure 27: Thermal impedance for IGBT Figure 28: Thermal impedance for diode 1/17 DocID23753 Rev 5

11 STGW4H12DF2, STGWA4H12DF2 Test circuits 3 Test circuits Figure 29: Test circuit for inductive load switching Figure 3: Gate charge test circuit V CC G C A A L=1 µh 12 V 47 kω 1 nf 1 kω + E R G B B G C 3.3 µf E D.U.T 1 µf V CC V i V GMAX 22 µf I G =CONST 2.7 kω 1 Ω D.U.T. V G - 47 kω P W 1 kω AM154v 1 AM155v1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform DocID23753 Rev 5 11/17

12 Package information STGW4H12DF2, STGWA4H12DF2 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 33: TO-247 package outline 12/17 DocID23753 Rev 5

13 STGW4H12DF2, STGWA4H12DF2 Package information Table 8: TO-247 package mechanical data mm Dim. Min. Typ. Max. A A b b b c.4.8 D E e L L L ØP ØR S DocID23753 Rev 5 13/17

14 Package information STGW4H12DF2, STGWA4H12DF2 4.2 TO-247 long leads package information Figure 34: TO-247 long lead package outline 14/17 DocID23753 Rev 5

15 STGW4H12DF2, STGWA4H12DF2 Package information Table 9: TO-247 long lead package mechanical data mm Dim. Min. Typ. Max. A A A b b b c D E E E e L L1 4.3 P Q S DocID23753 Rev 5 15/17

16 Revision history STGW4H12DF2, STGWA4H12DF2 5 Revision history Table 1: Document revision history Date Revision Changes 3-Oct First release. 29-Jan Mar Mar Jun Updated features in cover page. Updated Table 4: Static characteristics, Table 5: Dynamic characteristics and Table 7: Diode switching characteristics (inductive load). Minor text changes. Updated title and description in cover page. Updated Table 4: Static characteristics, Table 5: Dynamic characteristics and Table 7: Diode switching characteristics (inductive load). Added Section 2.1: Electrical characteristics (curves). Added device in TO-247 long leads. Updated 4: Package information. Updated Figure 7, Figure 11, Figure 14, Figure 15, Figure 2, Figure 21 and added Figure 26. Minor text changes. Modified: Table 2: "Absolute maximum ratings", Section 2: "Electrical characteristics", Table 6: "IGBT switching characteristics (inductive load)" Minor text changes. 16/17 DocID23753 Rev 5

17 STGW4H12DF2, STGWA4H12DF2 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 216 STMicroelectronics All rights reserved DocID23753 Rev 5 17/17