STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD

Transcription

1 STGB19NC60KDT4, STGF19NC60KD, 20 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB D PAK TAB TO-220FP Features Low on voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Short-circuit withstand time 10 μs IGBT co-packaged with ultrafast freewheeling diode TO Figure 1: Internal schematic diagram Applications High frequency inverters Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Table 1: Device summary Order code Marking Package Packing STGB19NC60KDT4 GB19NC60KD D²PAK Tape and reel STGF19NC60KD GF19NC60KD TO-220FP GP19NC60KD TO-220 Tube July 2017 DocID14701 Rev 4 1/26 This is information on a product in full production.

2 Contents Contents STGB19NC60KDT4, STGF19NC60KD, 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information D 2 PAK (TO-263) type A package information D²PAK (TO-263) type B package information D²PAK type A packing information D²PAK type B packing information TO-220FP package information TO-220 type A package information Revision history /26 DocID14701 Rev 4

3 STGB19NC60KDT4, STGF19NC60KD, Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value D²PAK, TO-220 TO-220FP VCES Collector-emitter voltage (VGE = 0 V) 600 V IC (1) Continuous collector current at TC = 25 C A Continuous collector current at TC = 100 C A ICL (2) Turn-off latching current 75 A ICP (3) Pulsed collector current 75 A VGE Gate-emitter voltage ±20 V IF Diode RMS forward current at TC= 25 C 20 A IFSM Surge non repetitive forward current tp= 10 ms sinusoidal Unit 50 A PTOT Total dissipation at TC = 25 C W VISO tscw Tstg TJ Notes: Insulation withstand voltage (RMS) from all three leads to external heat-sink (t=1 s; TC= 25 C) Short-circuit withstand time VCE = 300 V, Tj = 125 C, RG = 10 Ω, VGE = 12 V Storage temperature range Operating junction temperature range (1) Calculated according to the iterative formula: 2500 V 10 μs - 55 to 150 C (2) Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 C. (3) Pulse width limited by maximum junction temperature. Table 3: Thermal data Value Symbol Parameter D²PAK, TO-220 TO-220FP Rthj-case Thermal resistance junction-case IGBT Rthj-case Thermal resistance junction-case diode Rthj-amb Thermal resistance junction-ambient 62.5 Unit C/W DocID14701 Rev 4 3/26

4 Electrical characteristics STGB19NC60KDT4, STGF19NC60KD, 2 Electrical characteristics TC = 25 C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES VCE(sat) Collector-emitter breakdown voltage Collector-emitter saturation voltage IC = 1 ma, VGE = 0 V 600 V VGE =15 V, IC = 12 A VGE = 15 V, IC = 12 A, TC= 125 C VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µa V ICES Collector cut-off current 1.65 VCE = 600 V, VGE = 0 V 150 µa VCE=600 V, VGE = 0 V, TC= 125 C (1) V 1 ma IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±100 na Notes: (1) Defined by design, not subject to production test. Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance Coes Output capacitance VCE= 25 V, f = 1 MHz, VGE Reverse transfer = 0 V Cres capacitance Qg Total gate charge VCE = 480 V, IC = 12 A, Qge Gate-emitter charge VGE = 0 to 15 V (see Figure 20: " Gate Qgc Gate-collector charge charge test circuit") pf nc 4/26 DocID14701 Rev 4

5 STGB19NC60KDT4, STGF19NC60KD, Table 6: Switching on/off (inductive load) Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCC = 480 V, IC = 12 A, ns tr Current rise time RG = 10 Ω, VGE = 15 V ns (di/dt)on Turn-on current slope (see Figure 19: " Test circuit for inductive load switching" and Figure 21: " Switching waveform") A/µs td(on) Turn-on delay time VCC = 480 V, IC = 12 A, ns tr Current rise time RG = 10 Ω, VGE = 15 V, TC=125 C ns (di/dt)on Turn-on current slope (see Figure 19: " Test circuit for inductive load switching" and Figure 21: " Switching waveform") A/µs tr(voff) Off voltage rise time VCC = 480 V, IC = 12 A, ns td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V (see Figure 19: " Test circuit for ns tf Current fall time inductive load switching" and Figure 21: " Switching waveform") ns tr(voff) Off voltage rise time VCC = 480 V, IC = 12 A, ns td(off) Turn-off delay time RG = 10 Ω, VGE = 15 V, TC=125 C (see Figure 19: " ns tf Current fall time Test circuit for inductive load switching" and Figure 21: " Switching waveform") ns Table 7: Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Turn-on switching energy VCC = 480 V, IC = 12 A, μj RG = 10 Ω, VGE = 15 V Turn-off switching (see Figure 19: " Test circuit for energy inductive load switching") μj Ets Total switching energy μj Eon (1) Eoff (2) Eon (1) Eoff (2) Turn-on switching energy Turn-off switching energy VCC = 480 V, IC = 12 A, RG = 10 Ω, VGE = 15 V, TC=125 C (see Figure 19: " Test circuit for inductive load switching") μj μj Ets Total switching energy μj Notes: (1) Including the reverse recovery of the diode. (2) Including the tail of the collector current. DocID14701 Rev 4 5/26

6 Electrical characteristics Table 8: Collector-emitter diode STGB19NC60KDT4, STGF19NC60KD, Symbol Parameter Test conditions Min. Typ. Max. Unit VF trr Qrr Irrm trr Qrr Irrm Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current IF=12 A V IF=12 A, TC=125 C V IF=12 A, VR=40 V, di/dt=100 A/μs (see Figure 22: " Diode reverse recovery waveform") IF=12 A, VR=40 V, TC=125 C, di/dt=100 A/μs (see Figure 22: " Diode reverse recovery waveform") ns nc A ns nc A 6/26 DocID14701 Rev 4

7 STGB19NC60KDT4, STGF19NC60KD, 2.1 Electrical characteristics (curves) Figure 2: Output characteristics Electrical characteristics Figure 3: Transfer characteristics Figure 4: Collector-emitter on voltage vs temperature Figure 5: Gate charge vs gate-source voltage Figure 6: Capacitance variations Figure 7: Normalized gate threshold voltage vs temperature DocID14701 Rev 4 7/26

8 Electrical characteristics Figure 8: Collector-emitter on voltage vs collector current STGB19NC60KDT4, STGF19NC60KD, Figure 9: Normalized breakdown voltage vs temperature Figure 10: Switching energy vs temperature Figure 11: Switching energy vs. gate resistance Figure 12: Switching energy vs collector current Figure 13: Turn-off SOA 8/26 DocID14701 Rev 4

9 STGB19NC60KDT4, STGF19NC60KD, Figure 14: Emitter-collector diode characteristics Electrical characteristics Figure 15: Thermal impedance for TO-220, D²PAK Figure 16: Thermal impedance for TO-220FP Figure 17: Maximum DC collector current vs TCASE for TO-220FP Figure 18: Maximum power dissipation vs TCASE for TO-220FP 0 DocID14701 Rev 4 9/26

10 Test circuits STGB19NC60KDT4, STGF19NC60KD, 3 Test circuits Figure 19: Test circuit for inductive load switching Figure 20: Gate charge test circuit C A A G L=100 µh E B B G C 3.3 µf D.U.T 1000 µf V CC + R G E - AM01504v 1 Figure 21: Switching waveform Figure 22: Diode reverse recovery waveform 10/26 DocID14701 Rev 4

11 STGB19NC60KDT4, STGF19NC60KD, Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 4.1 D 2 PAK (TO-263) type A package information Figure 23: D²PAK (TO-263) type A package outline DocID14701 Rev 4 11/26

12 Package information Dim. STGB19NC60KDT4, STGF19NC60KD, Table 9: D²PAK (TO-263) type A package mechanical data mm Min. Typ. Max. A A b b c c D D D E E E e 2.54 e H J L L L R 0.40 V /26 DocID14701 Rev 4

13 STGB19NC60KDT4, STGF19NC60KD, Package information Figure 24: D²PAK (TO-263) type A recommended footprint (dimensions are in mm) DocID14701 Rev 4 13/26

14 Package information 4.2 D²PAK (TO-263) type B package information Figure 25: D²PAK (TO-263) type B package outline STGB19NC60KDT4, STGF19NC60KD, _23_B 14/26 DocID14701 Rev 4

15 STGB19NC60KDT4, STGF19NC60KD, Dim. Table 10: D²PAK (TO-263) type B mechanical data mm Package information Min. Typ. Max. A A b b b b c c c D D E E e 2.54 BSC H L L L L L DocID14701 Rev 4 15/26

16 Package information STGB19NC60KDT4, STGF19NC60KD, Figure 26: D²PAK (TO-263) type B recommended footprint (dimensions are in mm) 16/26 DocID14701 Rev 4

17 STGB19NC60KDT4, STGF19NC60KD, 4.3 D²PAK type A packing information Figure 27: D²PAK type A tape outline Package information DocID14701 Rev 4 17/26

18 Package information Figure 28: D²PAK type A reel outline STGB19NC60KDT4, STGF19NC60KD, Table 11: D²PAK type A tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base quantity 1000 P Bulk quantity 1000 R 50 T W /26 DocID14701 Rev 4

19 STGB19NC60KDT4, STGF19NC60KD, 4.4 D²PAK type B packing information Figure 29: D²PAK type B tape outline Package information Figure 30: D²PAK type B reel outline DocID14701 Rev 4 19/26

20 Package information Dim. Table 12: D²PAK type B reel mechanical data Min. STGB19NC60KDT4, STGF19NC60KD, mm Max. A 330 B 1.5 C D 20.2 G N 100 T /26 DocID14701 Rev 4

21 STGB19NC60KDT4, STGF19NC60KD, 4.5 TO-220FP package information Figure 31: TO-220FP package outline Package information _Rev_12_B DocID14701 Rev 4 21/26

22 Package information Dim. Table 13: TO-220FP package mechanical data STGB19NC60KDT4, STGF19NC60KD, mm Min. Typ. Max. A B D E F F F G G H L2 16 L L L L L Dia /26 DocID14701 Rev 4

23 STGB19NC60KDT4, STGF19NC60KD, 4.6 TO-220 type A package information Figure 32: TO-220 type A package outline Package information DocID14701 Rev 4 23/26

24 Package information Dim. Table 14: TO-220 type A package mechanical data STGB19NC60KDT4, STGF19NC60KD, mm Min. Typ. Max. A b b c D D E e e F H J L L L L øp Q /26 DocID14701 Rev 4

25 STGB19NC60KDT4, STGF19NC60KD, Revision history 5 Revision history Table 15: Document revision history Date Revision Changes 08-May Initial release 28-May Value on Table 3: Thermal resistance has been changed. Inserted Figure 16: Thermal impedance for TO-220, D²PAK and Figure 17: Thermal impedance for TO-220FP 31-Jul Added: Figure 18 and Figure 19 on page Jul Modified internal schematic diagram on cover page Modified Table 2: "Absolute maximum ratings", Table 3: "Thermal data", and Table 4: "Static characteristics". Modified Figure 3: "Transfer characteristics", Figure 4: "Collectoremitter on voltage vs temperature" and Figure 8: "Collector-emitter on voltage vs collector current". Updated Section 4: "Package information". Minor text changes. DocID14701 Rev 4 25/26

26 STGB19NC60KDT4, STGF19NC60KD, IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved 26/26 DocID14701 Rev 4