ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC

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1 Datasheet ACEPACK 2 sixpack topology, 12, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Sixpack topology 12, 75 A IGBTs and diodes Soft and fast recovery diode Integrated NTC Applications Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 2 khz. Product status A2P75S12M3 Product summary Order code Marking A2P75S12M3 A2P75S12M3 Package ACEPACK 2 Leads type Solder contact pins DS Rev 5 - March 218 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at T j = 25 C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBT Symbol Parameter alue nit CES Collector-emitter voltage ( GE = ) 12 I C Continuous collector current (T C = 1 C) 75 A I (1) CP Pulsed collector current (t p = 1 ms) 15 A GE Gate-emitter voltage ±2 P TOT Total power dissipation of each IGBT (T C = 25 C, T J = 175 C) T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter Test conditions Min. Typ. Max. nit (BR)CES Collector-emitter breakdown voltage I C = 1 ma, GE = 12 CE(sat) (terminal) Collector-emitter saturation voltage GE = 15, I C = 75 A GE = 15, I C = 75 A, T J = 15 C 2.3 GE(th) Gate threshold voltage CE = GE, I C = 1 ma I CES Collector cut-off current GE =, CE = 12 1 µa I GES C ies Gate-emitter leakage current Input capacitance CE =, GE = ± 2 ± 5 na 47 pf C oes Output capacitance CE = 25, f = 1 MHz, GE = 35 pf C res Reverse transfer capacitance 19 pf Q g Total gate charge CC = 96, I C = 75 A, GE = ±15 35 nc t d(on) Turn-on delay time t CC = 6, I C = 75 A, R G = 1 Ω, r Current rise time 32 ns E on (1) Turn-on switching energy GE = ±15, di/dt = 19 A/µs 198 ns 3.59 mj t d(off) Turn-off delay time 25 ns t f Current fall time CC = 6, I C = 75 A, R G = 1 Ω, GE = ±15, 159 ns E (2) off Turn-off switching dv/dt = 6 /µs; energy 5.13 mj DS Rev 5 page 2/13

3 Diode Symbol Parameter Test conditions Min. Typ. Max. nit t d(on) Turn-on delay time CC = 6, I C = 75 A, 2 ns t r Current rise time R G = 1 Ω, GE = ±15, 35 ns E on (1) Turn-on switching energy di/dt = 1718 A/µs, T J = 15 C 6.28 mj t d(off) Turn-off delay time CC = 6, I C = 75 A, 266 ns t f Current fall time R G = 1 Ω, GE = ±15, 251 ns E off (2) Turn-off switching energy dv/dt = 49 /µs, T J = 15 C 7.7 mj t SC Short-circuit withstand time CC 6, GE 15, T Jstart 15 C 1 µs R THj-c R THc-h Thermal resistance junction-to-case Thermal resistance case-to-heatsink Each IGBT.3.33 C/ Each IGBT, λ grease = 1 /(m C).6 C/ 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.2 Diode Limiting values at T j = 25 C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode Symbol Parameter alue nit RRM Repetitive peak reverse voltage 12 I F Continuous forward current (T C = 1 C) 75 A I (1) FP Pulsed forward current (t p = 1 ms) 15 A T JMAX Maximum junction temperature 175 C T Jop Operating junction temperature range under switching conditions -4 to 15 C 1. Pulse width limited by maximum junction temperature. Table 4. Electrical characteristics of the diode Symbol Parameter Test conditions Min. Typ. Max. nit F (terminal) Forward voltage I F = 75 A I F = 75 A, T J = 15 C t rr Reverse recovery time - 2 ns Q rr Reverse recovery charge I F = 75 A, R = 6, - 6. µc I rrm Reverse recovery current GE = ±15, di/dt = 19 A/μs - 78 A E rec Reverse recovery energy mj DS Rev 5 page 3/13

4 NTC Symbol Parameter Test conditions Min. Typ. Max. nit t rr Reverse recovery time I F = 75 A, R = 6, - 5 ns Q rr Reverse recovery charge GE = ±15, µc I rrm Reverse recovery current di/dt = 1718 A/μs, - 9 A E rec Reverse recovery energy T J = 15 C mj R THj-c R THc-h Thermal resistance junction-to-case Thermal resistance caseto-heatsink Each diode C/ Each diode, λ grease = 1 /(m C) -.75 C/ 1.3 NTC Table 5. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions Min. Typ. Max. nit R 25 Resistance T = 25 C 5 kω R 1 Resistance T = 1 C 493 Ω ΔR/R Deviation of R % B 25/5 B-constant 3375 K B 25/8 B-constant 3411 K T Operating temperature range C Figure 1. NTC resistance vs temperature Figure 2. NTC resistance vs temperature, zoom R (Ω) GADG NTC R (Ω) GADG NTCZ max 6 min typ T C ( C) T C ( C) DS Rev 5 page 4/13

5 Package 1.4 Package Table 6. ACEPACK 2 package Symbol Parameter Min. Typ. Max. nit isol Isolation voltage (AC voltage, t = 6 s) 25 T stg Storage temperature C CTI Comparative tracking index 2 L s Stray inductance module P1 - E loop 33.5 nh R s Module single lead resistance, terminal to chip 3.6 mω DS Rev 5 page 5/13

6 Electrical characteristics curves 2 Electrical characteristics curves Figure 3. IGBT output characteristics ( GE = 15, terminal) Figure 4. IGBT output characteristics (T J = 15 C, terminal) I C (A) T J = 25 C IGBT OC25 I C (A) T J = 15 C IGBT OC T J = 15 C CE () CE () I C (A) Figure 5. IGBT transfer characteristics ( CE = 15, terminal) IGBT OC25 Figure 6. Switching energy vs gate resistance E (mj) 14 IGBT SLG CC = 6, I C = 75 A, GE = ± E ON (T J =25 C) 1 75 T J = 25 C E ON (T J =15 C) E OFF (T J =15 C) 5 25 T J = 15 C 4 2 E OFF (T J =25 C) GE () R G (Ω) DS Rev 5 page 6/13

7 Electrical characteristics curves Figure 7. Switching energy vs collector current E (mj) 12 9 IGBT SLC CC = 6, R G = 1 Ω, GE = ±15 E ON (T J =15 C) E OFF (T J =15 C) E OFF (T J =25 C) Figure 8. IGBT reverse biased safe operating area (RBSOA) I C (A) IGBT OC E ON (T J =25 C) I C (A) 1 T J = 125 C, GE = ±15, R G = 1 Ω CE () Figure 9. Diode forward characteristics (terminal) I F (A) T J = 15 C IGBT DF T J = 25 C F () Figure 1. Diode reverse recovery energy vs diode current slope E rec (mj) IGBT RRE CE = 6, GE = ±15, I F = 75 A T J = 15 C T J = 25 C di/dt (A/µs) Figure 11. Diode reverse recovery energy vs forward current Figure 12. Diode reverse recovery energy vs gate resistance E rec (mj) 6 IGBT RRE CE = 6, GE = ±15, R G = 1 Ω E rec (mj) 7 IGBT RRE CE = 6, GE = ±15, I F = 75 A T J = 15 C T J = 15 C 2 T J = 25 C 2 T J = 25 C I F (A) R G (Ω) DS Rev 5 page 7/13

8 Electrical characteristics curves Figure 13. IGBT thermal impedance Figure 14. Inverter diode thermal impedance Zth( C/) IGBT ZTH Zth( C/) IGBT MT Zth(typ.)JH Zth(max.)JC 1 Zth(typ.)JH 1-1 Zth(max.)JC JC RC - Foster Thermal Network i r i ( C/) τ i (s) JC RC - Foster Thermal Network i r i ( C/) τ i (s) JH RC - Foster Thermal Network i r i ( C/) τ i (s) t (s) JH RC - Foster Thermal Network i r i ( C/) τ i (s) t (s) DS Rev 5 page 8/13

9 Test circuits 3 Test circuits Figure 15. Test circuit for inductive load switching Figure 16. Gate charge test circuit C A A k k G L=1 µh + E R G B B G C 3.3 µf E D..T 1 µf CC k k - k k AM15 4v 1 AM155v1 Figure 17. Switching waveform Figure 18. Diode reverse recovery waveform 9% G 1% 9% CE Tr(off) Tcross 9% 1% 25 IC Td(on) Ton Tr(Ion) Td(off) Toff Tf 1% AM156v1 DS Rev 5 page 9/13

10 Topology and pin description 4 Topology and pin description P Figure 19. Electrical topology and pin description T1 G1 G3 G5 T2 G2 G4 G6 E E E E E E Figure 2. Package top view with sixpack pinout E E E' E E G6 G5 E E E' E G4 P P P P G3 E E E' G2 T1 T2 G1 DS Rev 5 page 1/13

11 E E E' E E E E' E E E E' E G6 G4 P P P P G2 T1 T2 G5 G3 G1 A2P75S12M3 Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 5.1 ACEPACK 2 SIXPACK solder pins package information Figure 21. ACEPACK 2 sixpack solder pins package outline (dimensions are in mm) BSC 15.5±.5 12±.35 Detail A 3.5 REF x 45 A A 56.7±.3 51± ± ±.2 1.3± ±.5 48±.3 37 REF 42.5±.2 53± REF ±.3 2.5± BSC 4.5± REF _rev4 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. DS Rev 5 page 11/13

12 Revision history Table 7. Document revision history Date Revision Changes 19-May Initial release. 24-May Feb Oct Mar pdated Table 5: "Electrical characteristics of the diode". Minor text changes. Added Figure 19: "Package top view with pinout" and Section 2: "Electrical characteristics (curves)". Minor text changes. pdated Section 1: "Electrical ratings", Section 2: "Electrical characteristics curves", and Section 5: "Package information". Minor text changes. Document status promoted from preliminary data to production data. Removed maturity status indication from cover page. pdated features in cover page, Section 1.1 IGBT, Section 1.2 Diode, Section 1.4 Package, Section 2 Electrical characteristics curves and Figure 21. ACEPACK 2 sixpack solder pins package outline (dimensions are in mm). Minor text changes. DS Rev 5 page 12/13

13 IMPORTANT NOTICE PLEASE READ CAREFLLY STMicroelectronics N and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 5 page 13/13

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