N-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.
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1 STL90N10F7 N-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package Features Datasheet - preliminary data Order code V T Jmax R DS(on) max STL90N10F7 100 V Ω 16 A (1) I D P TOT 5 W 1 1. The value is rated according R thj-pcb PowerFLAT 5x6 Extremely low gate charge Ultra low on-resistance Low gate input resistance Applications Figure 1. Internal schematic diagram D(5, 6, 7, 8) G(4) Switching applications Description This device is an N-channel Power MOSFET developed using the 6 th generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages S(1, 2, 3) Top View AM15540v2 Table 1. Device summary Order code Marking Package Packaging STL90N10F7 90N10F7 PowerFLAT TM 5x6 Tape and reel April 2013 DocID Rev 1 1/14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 14
2 Contents STL90N10F7 Contents 1 Electrical ratings Electrical characteristics Test circuits Package mechanical data Packaging mechanical data Revision history /14 DocID Rev 1
3 STL90N10F7 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 100 V V GS Gate-source voltage ± 20 V (1) I D I (1) D I (2) D (2) I D (2)(3) I DM Drain current (continuous) 70 A Drain current (continuous) at T C = 100 C 50 A Drain current (continuous) 16 A Drain current (continuous) at T C = 100 C 11 A Drain current (pulsed) 64 A P TOT (1) Total dissipation at T C = 25 C 100 W P TOT (2) Total dissipation at T C = 25 C 5 W T stg T j Storage temperature Max. operating junction temperature -55 to 175 C C 1. This value is rated according to R thj-c 2. This value is rated according to R thj-pcb 3. Pulse width limited by safe operating area. Table 3. Thermal data Symbol Parameter Value Unit R thj-pcb Thermal resistance junction-pcb max 31 C/W R thj-case Thermal resistance junction-case max 1.5 C/W DocID Rev 1 3/14
4 Electrical characteristics STL90N10F7 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) I D = 250 µa, V GS = V V DS = 100 V V DS = 100 V, T C =125 C Gate-body leakage I GSS V current (V DS = 0) GS = + 20 V 100 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa V Static drain-source R DS(on) V on-resistance GS = 10 V, I D = 8 A Ω µa µa Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 50 V, f = 1 MHz, pf C rss V GS = 0 Reverse transfer capacitance pf Q g Total gate charge V DD = 50 V, I D = 16 A, nc Q gs Gate-source charge V GS = 10 V - TBD - nc Q gd Gate-drain charge (see Figure 3) - TBD - nc Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time - TBD - ns t V DD = 50 V, I D = 8 A, r Rise time - TBD - ns R G = 4.7 Ω, V GS = 10 V t d(off) Turn-off delay time (see Figure 4 and Figure 7) - TBD - ns t f Fall time - TBD - ns 4/14 DocID Rev 1
5 STL90N10F7 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current A I (1) SDM Source-drain current (pulsed) A V (2) SD Forward on voltage I SD = 16 A, V GS = V t rr Reverse recovery time I SD = 16 A, di/dt = 100 A/µs - - ns Q rr Reverse recovery charge V DD = 80 V, T j =150 C - - nc I RRM Reverse recovery current (see Figure 7) - - A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID Rev 1 5/14
6 Test circuits STL90N10F7 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 4. Test circuit for inductive load switching and diode recovery times Figure 5. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 6/14 DocID Rev 1
7 STL90N10F7 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DocID Rev 1 7/14
8 Package mechanical data STL90N10F7 Table 8. Dim. PowerFLAT 5x6 (Ribbon) type S-R mechanical data mm Min. Typ. Max. A A A b D E D E e 1.27 L K /14 DocID Rev 1
9 STL90N10F7 Package mechanical data Figure 8. PowerFLAT 5x6 (Ribbon) type S-R drawing 5 8 Bottom View Pin 1 identification 4 1 Side View 8 5 Pin 1 identification. 1 4 Top View _Rev.F_Ribbon type S-R DocID Rev 1 9/14
10 Package mechanical data STL90N10F7 Figure 9. Recommended footprint Footprint 10/14 DocID Rev 1
11 REF.R0.50 STL90N10F7 Packaging mechanical data 5 Packaging mechanical data Figure 10. PowerFLAT 5x6 tape (a) T (0.30 ±0.05) Do Ø1.55±0.05 Y P 2 2.0±0.1 (I) P 0 4.0±0.1 (II) E1 1.75±0.1 C L Bo (5.30±0.1) D1 Ø1.5 MIN. REF 0.20 F(5.50±0.1)(III) W(12.00±0.3) Y Ko (1.20±0.1) P1(8.00±0.1) Ao(6.30±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ± (III) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs _Tape_rev_C Figure 11. Pin 1 identification PowerFLAT 5x6 package orientation in carrier tape. a. All dimensions are in millimeters. DocID Rev 1 11/14
12 Packaging mechanical data STL90N10F7 Figure 12. PowerFLAT 5x6 reel R0.60 PART NO W3 11.9/15.4 W (max) R ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES A 330 (+0/-4.0) ESD LOGO 06 PS ØA W (+2/-0) 128 R1.10 Ø All dimensions are in millimeters CORE DETAIL _Reel_rev_C 12/14 DocID Rev 1
13 STL90N10F7 Revision history 6 Revision history Table 9. Document revision history Date Revision Changes 16-Apr First release. DocID Rev 1 13/14
14 STL90N10F7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 DocID Rev 1
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