SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B

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1 PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA K Rads (Si) 6.mΩ 60nC IRHSLNA K Rads (Si) 6.mΩ 60nC IRHSLNA K Rads (Si) 7.mΩ 60nC SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Features: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output n Low Conduction Losses n Low Switching Losses n Low Vf Schottky Rectifier n Refer to IRHSNA57064 for Lower R DS(on) Absolute Maximum Ratings Parameter Units VGS = 2V, TC = 25 C Continuous Drain or Source Current 75* VGS = 2V, TC = 00 C Continuous Drain or Source Current 75* A IDM Pulsed Drain Current 300 TC = 25 C Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/ C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 370 mj IAR Avalanche Current 75 A EAR Repetitive Avalanche Energy 25 mj IF (AV)@ TC = 25 C Schottky and Body Diode Avg. Forward Curren ƒ 75* IF (AV)@ TC =00 C Schottky and Body Diode Avg. Forward Current ƒ 75* A TJ, TSTG Opeating and Storage Temperature Range -55 to 50 Pckg. Mounting Surface Temp. 300 (for 5s) C Weight 3.3 (Typical) g * Current is limited by package For footnotes refer to the last page 0/26/5

2 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID =.0mA RDS(on) Static Drain-to-Source On-State 6. mω VGS = 2V, ID = 45A Resistance VGS(th) Gate Threshold Voltage V VDS = VGS, ID =.0mA gfs Forward Transconductance 45 S VDS = 5V, IDS = 45A IDSS Zero Gate Voltage Drain Current 90 µa VDS = 48V, VGS = 0V 50 ma VDS = 48V, VGS = 0V, TJ = 25 C IGSS Gate-to-Source Leakage Forward 00 VGS = 20V na IGSS Gate-to-Source Leakage Reverse -00 VGS = -20V Qg Total Gate Charge 60 VGS =2V, ID = 45A, Qgs Gate-to-Source Charge 55 nc VDS = 30V Qgd Gate-to-Drain ( Miller ) Charge 65 td(on) Turn-On Delay Time 35 VDD = 30V, ID = 45A, tr Rise Time 25 ns VGS =2V, RG = 2.35Ω td(off) Turn-Off Delay Time 75 tf Fall Time 50 LS + LD Total Inductance 6.6 nh Measured from center of drain pad to center of source pad Schottky Diode & Body Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions VSD Diode Forward Voltage 0.93 TJ = -55 C, ID = 45A, VGS = 0V 0.9 V TJ = 25 C, ID = 45A, VGS = 0V 0.82 TJ = 25 C, ID = 45A, VGS = 0V trr Reverse Recovery Time 00 ns Tj = 25 C, IF = 45A, di/dt 00A/µs QRR Reverse Recovery Charge 20 nc VDS 30V LS + LD Total Inductance 7.95 nh Measured from center of drain pad to center of source pad (for Schottky only) ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case (MOSFET) 0.5 RthJC Junction-to-Case (Schottky) 0.7 C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2

3 Radiation Characteristics International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table. Electrical Tj = 25 C, Post Total Dose Irradiation Parameter Up to 600K Rads(Si) 000K Rads (Si) 2 Units Test Conditions Min Max Min Max BV DSS Drain-to-Source Breakdown Voltage V V GS = 0V, I D =.0mA VGS(th) Gate Threshold Voltage VGS = V DS, I D =.0mA I GSS Gate-to-Source Leakage Forward na V GS = 20V I GSS Gate-to-Source Leakage Reverse V GS = -20 V I DSS Zero Gate Voltage Drain Current 0 25 µa V DS = 48V, V GS =0V R DS(on) Static Drain-to-Source mω VGS = 2V, I D = 45A On-State Resistance (TO-3) R DS(on) Static Drain-to-Source mω VGS = 2V, I D = 45A On-State Resistance (SMD-2) V SD Diode Forward Voltage.3.3 V V GS = 0V, IS = 45A. Part numbers, IRHSLNA53064 and IRHSLNA Part number IRHSLNA58064 International Rectifier Radiation Hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET Energy Range V DS (V) MeV/(mg/cm 2 )) (MeV) GS GS GS GS GS =-20V Kr Xe Au VDS VGS Kr Xe Au Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page 3

4 I D, Drain-to-Source Current (A) VGS TOP 5V 2V 0V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 5.0V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) I D, Drain-to-Source Current (A) VGS TOP 5V 2V 0V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 5.0V 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J = 50 C T J = 25 C V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 75A V GS = 2V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4

5 V GS, Gate-to-Source Voltage (V) I = D 45A V DS = 48V V DS = 30V V DS = 2V FOR TEST CIRCUIT SEE FIGURE 5b Q G, Total Gate Charge (nc) Fig 5. Typical Gate Charge Vs. Gate-to-Source Voltage Current Regulator Same Type as D.U.T. 50KΩ 2 V Q GS Q G Q GD 2V.2µF.3µF D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 5a. Basic Gate Charge Waveform Fig 5b. Gate Charge Test Circuit 5

6 200 LIMITED BY PACKAGE V DS R D I D, Drain Current (A) Fig 7a. Switching Time Test Circuit V DS R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. + - V DD 90% T C, Case Temperature ( C) Fig 6. Maximum Drain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 7b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig 8. Maximum Effective Transient Thermal Impedance, Junction-to-Case, MOSFET 6

7 E AS, Single Pulse Avalanche Energy (mj) I D TOP 33.5A 47.4A BOTTOM 75A Starting T, Junction Temperature ( J C) Fig 9. Maximum Avalanche Energy Vs. Drain Current 5V tp V (BR)DSS V DS L DRIVER R G 20V V GS tp D.U.T. I AS 0.0Ω + - V DD A I AS Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms 7

8 Instantaneous Forward Current - I S (A) MOSFET Body Diode & Schottky Diode Characteristics 00 0 Tj = 25 C Tj = 25 C Tj = -55 C Forward Voltage Drop - V SD (V) Fig. 0 - Typical Forward Voltage Drop Characterstics Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case, Schottky 8 PDM t t2

9 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature Pulse width 300µs; Duty Cycle 2% ƒ 50% Duty Cycle, Rectangular VDD = 25V, starting TJ = 25 C, L= 0.3 mh Peak IL = 75A, VGS = 2V Total Dose Irradiation with VGS Bias. 2 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 09, condition A. Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 09, condition A. Specified Radiation Characteristics are for Radiation Hardened MOSFET die only. Case Outline and Dimensions SMD-2 IR WORLD HEADQUARTERS: 0 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (30) IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 0453, USA Tel: (978) TAC Fax: (30) Visit us at for sales contact information. Data and specifications subject to change without notice. 0/