MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit

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1 MGV2YS6A TOSHIBA IGBT Module Silicon N Channel IGBT MGV2YS6A High Power Switching Applications Motor Control Applications Unit in mm The electrodes are isolated from case. Enhancement mode Thermal output terminal (TH) Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 G2 Fo2 E2 E1/C2 JEDEC EIAJ TOSHIBA Weight : 68 g 2 6A1A E

2 MGV2YS6A Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector emitter voltage V CES 17 V Gate emitter voltage V GES ±2 V Collector current DC I C A Forward current DC I F A Collector power dissipation (Tc = 25 C) P C 3 W Junction temperature T j 15 C Storage temperature range T stg ~5 C Isolation voltage Screw torque V Isol (AC 1 min) Terminal: M8 1 N m Mounting: M5 3 N m V Electrical Characteristics (Ta = 25 C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Gate leakage current I GES V GE = ±2V, V CE = V ±1 µa Collector cut off current I CES V CE = 17V, V GE = V 1 ma Gate emitter cut off voltage V GE(off) I C = ma, V CE = 5V 5.5 V Collector emitter saturation voltage V CE(sat) I C = A T j = 25 C V GE = 15V T j = 5 C V Input capacitance C ies V CE = 1V, V GE = V, f = 1MHz 5 pf Gate emitter voltage V GE V Gate resistance R G Ω Switching time Forward voltage Reverse recovery time Thermal resistance Turn on delay time t d(on) Inductive load.35 Rise time t r V CC = 9V.2 Turn on time t on I C = A.55 Turn off delay time t d(off) V GE = ±15V.9 Fall time t f R G = 8.2Ω..6 Turn off time t off (Note) 1.3 V F t rr R th(j c) I F = A, T j = 25 C V GE = V T j = 5 C 2. I F = A, V GE = 15V di/dt = 2A/µs µs V.2. µs Transistor stage.29 Diode stage.56 RTC operating current I rtc T j = 25 C 8 A C / W

3 MGV2YS6A Thermistor Characteristic Symbol Test Condition MIn. Typ. Max. Unit Zero power resistance R25 Tc 25 C 1 kω B value R25 / 85 Tc 25 C / Tc 85 C 39 K Isolation voltage Tc 25 C 25 Vrms (Note) : Switching time measurement circuit and input / output waveforms V GE R G R G I C L I F V CC V GE I C 9% 9% 1% t rr 9% V CE 1% 1% t d(off) t f t off t d(on) t r t on

4 MGV2YS6A I C V CE I C V CE Collector current IC (A) Common emitter Tj = 25 C VGE = 8V Collector current IC (A) Common emitter Tj = 5 C VGE = 8V Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) V CE V GE V CE V GE Collector-emitter voltage VCE (V) Common emitter Tj = 25 C 8 IC = 2A Collector-emitter voltage VCE (V) IC = 2A Common emitter Tj = 5 C Gate-emitter voltage V GE (V) Gate-emitter voltage V GE (V) 1 C V GE & Collector current IC (A) $ " Tj = 25 C 5 VCE = 5V 1 2 Gate-emitter voltage V GE (V)

5 MGV2YS6A Forward current IF (A) Common cathode VGE = I F V F 5 Tj = 25 C Collector-emitter voltage VCE (V) V CE, V GE Q G 6 VCE = 9 RL = Tj = 25 C Gate-emitter voltage VGE (V) Forward voltage V F (V) Charge Q G (nc) Switching time ( s) Switching Time R G VCC = 9V VGE = ±15V : Tj = 25 C IC = A : Tj = 5 C td(off) tr ton toff td(on) Gate resistance R G (9) tf Switching loss (mj) Switching Loss R G VCC = 9V VGE = ±15V IC = A : Tj = 25 C : Tj = 5 C Gate resistance R G (9) Eoff Eon Switching Time I C Switching Loss I C Switching time ( s) tr toff ton 1 tf td(on) VCC = 9V VGE = ±15V : Tj = 25 C RG = 8.29 : Tj = 5 C td(off) 2 3 Switching loss (mj) 1 1 VCC = 9V VGE = ±15V RG = 8.29 : Tj = 25 C : Tj = 5 C Eoff Eon Collector current I C (A) Collector current I C (A)

6 MGV2YS6A t rr, I rr I F E dsw I F 1 1 Peak reverse recovery current Irr (A) Reverse recovery time trr (ns) 1 trr Irr Common cathode di / dt = 2A / s VGE = 1V VCC = 9V : Tj = 25 C : Tj = 5 C Reverse recovery loss Edsw (mj) 1 Common cathode di / dt = 2A / s VGE = 1V VCC = 9V : Tj = 25 C : Tj = 5 C Forward crrent I F (A) Forward crrent I F (A) Capacitance C (pf) Common emiter VGE = F = 1MHz Tj = 25 C C V CE Collector-emitter voltage V CE (V) Cies Coes Cres Transient thermal resistance Rth(j-c) ( C / W) Tc = 25 C R th(j-c) t w Diode stage Pulse width t w Transistor stage (s) 1 Short Circuit Soa 16 Short Circuit t w R G Collector current IC (A) 1 1 VCC = 9V RG = 8.29 VGE = ±15V tw 1 s Tj 5 C Pulse width tw (s) 8 VCC = V VGE = ±15V Tj = 5 C 8 16 Collector-emitter voltage V CE (V) Gate resistance R G (9)

7 MGV2YS6A 1 Reverse Bias Soa Collector current IC (A) 1 Tj 5 C VGE = ±15V 1 RG = Collector emitter voltage V CE (V)

8 MGV2YS6A <V CE(sat) Rank> <V F Rank> VCE(sat) VF Rank Symbol Min. Max. Rank Symbol Min Max G H I J K L M 3.7. N <Mark Position> TOSHIBA MGV2YS6A 23F 22G H L

9 MGV2YS6A RESTRICTIONS ON PRODUCT USE 77EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice

10 This datasheet has been download from: Datasheets for electronics components.

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