V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.

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1 QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M H 4 V (4TYP) G (3TYP) R (DEEP) T (SCREWING DEPTH) (NC) 4 K (3TYP) L (2TYP) U (TYP) Q P Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A. 4. B C D 4.88±. 24.±. E 2.24±. 7.±. F.8 3. G.43. H J Dimensions Inches Millimeters L.69±. 7.±. M N.2. P.22. Q R.6 4. S M6 Metric M6 T.63 Min. 6. Min. U. x x. Features: -4 to C Extended Temperature Range % Dynamic Tested % Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 677- Rugged SWSOA and RRSOA K V.28 Dia. 7. Dia. Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction

2 QIC68 8 Amperes/6 Volts Absolute Maximum Ratings, T j = C unless otherwise specified Ratings Symbol QIC68 Units Junction Temperature T j -4 to + C Storage Temperature T stg -4 to + C Collector-Emitter Voltage (V GE = V) V CES T j = -4 C 8 Volts T j = + C 63 Volts T j = + C 6 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (T C = C) I C 8 Amperes Peak Collector Current (Pulse) I CM 7 *2 Amperes Diode Forward Current (T C = 2 C) * I F 8 Amperes Diode Forward Surge Current (Pulse) * I FM 7 *2 Amperes Maximum Collector Dissipation P C Watts (T C = C, IGBT Part, T j(max) C) Mounting Torque, M6 Terminal Screws 44 in-lb Mounting Torque, M6 Mounting Screws 44 in-lb Module Weight (Typical) 9 Grams Isolation Voltage (Charged Part to Baseplate, AC 6Hz min.) V iso 9. kvolts Partial Discharge Q pd pc (V = 69 V RMS, V2 = 2 V RMS, f = 6Hz (Acc. to IEC 287)) Maximum Short-Circuit Pulse Width, t psc µs (V CC 4V, V GE = ±V, ) Electrical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES V CE = V CES, V GE = V, 3 ma V CE = V CES, V GE = V, 3 ma Gate Leakage Current I GES V GE = V GES, V CE = V. µa Gate-Emitter Threshold Voltage V GE(th) I C = 3mA, V CE = V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 8A, V GE = V, 3.8 *3 Volts I C = 8A, V GE = V, Volts Total Gate Charge Q G V CC = 36V, I C = 8A, V GE = V. µc Emitter-Collector Voltage * V EC I E = 8A, V GE = V, 3.3 Volts * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. I E = 8A, V GE = V, Volts 2

3 QIC68 8 Amperes/6 Volts Electrical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies nf Output Capacitance C oes V GE = V, V CE = V.9 nf Reverse Transfer Capacitance C res f = khz.44 nf Resistive Turn-on Delay Time t d(on) V CC = 36V, I C = 8A, TBD µs Load Rise Time t r V GE = ±V, TBD µs Switching Turn-off Delay Time t d(off) R G(on) = 3Ω, R G(off) = 3Ω, TBD µs Times Fall Time t f Inductive Load TBD µs Turn-on Switching Energy E on, I C = 8A, V GE = ±V, 46 mj Turn-off Switching Energy E off R G(on) = 3Ω, R G(off) = 3Ω, mj V CC = 36V, Inductive Load Diode Reverse Recovery Time * t rr V CC = 36V, I E = 8A,.7 µs Diode Reverse Recovery Charge * Q rr V GE = ±V, R G(on) = 3Ω, *3 µc Diode Reverse Recovery Energy E rec Inductive Load, 2 mj Stray Inductance (C-E2) L SCE 6 nh Lead Resistance Terminal-Chip R CE.8 mω Thermal and Mechanical Characteristics, T j = C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case *4 R th(j-c) Q Per IGBT. C/W Thermal Resistance, Junction to Case *4 R th(j-c) D Per FWDi. C/W Contact Thermal Resistance, Case to Fin R th(c-f) Per Module,.8 C/W Thermal Grease Applied, λ grease = W/mK Comparative Tracking Index CTI 6 Clearance Distance in Air d a(t-t) 9 mm (Terminal to Terminal) Creepage Distance Along Surface d s(t-t) 4 mm (Terminal to Terminal) * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *3 Pulse width and repetition rate should be such that device junction temperature rise is negligible. *4 T C measurement point is just under the chips. 3

4 QIC68 8 Amperes/6 Volts OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS COLLECTOR CURRENT, I C, (AMPERES) COLLECTOR CURRENT, I C, (AMPERES) COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS V GE = V T j = C V GE = V 3 COLLECTOR CURRENT, I C, (AMPERES) EMITTER CURRENT, I E, (AMPERES) V CE = V GE GATE-EMITTER VOLTAGE, V GE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS)) EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 4

5 QIC68 8 Amperes/6 Volts CAPACITANCE CHARACTERISTICS GATE CHARGE CHARACTERISTICS CAPACITANCE, C ies, C oes, C res, (nf). V GE = V f = khz C ies C oes C res GATE EMITTER VOLTAGE, V GE, (VOLTS) V CE = 36V I C = 8A... COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) GATE CHARGE, Q G, (μc).2 SWITCHING ENERGIES, E on, E off, E rec, (J) ENERGY CHARACTERISTICS V CC = 36V, V GE = ±V, R G(on) = 3Ω, R G(off) = 3Ω, L S = nh, Inductive Load E on E off E rec SWITCHING ENERGIES, E on, E rec, (J) ENERGY CHARACTERISTICS V CC = 36V, I C = 8A, V GE = ±V, L S = nh,, Inductive Load E on E rec COLLECTOR CURRENT, I C, (AMPERES) GATE RESISTOR, R G, (Ohm)

6 QIC68 8 Amperes/6 Volts SWITCHING ENERGIES, E off, (J) REVERSE RECOVERY TIME, t rr, (μs) ENERGY CHARACTERISTICS V CC = 36V, I C = 8A, V GE = ±V, L S = nh,, Inductive Load E off FREE-WHEEL DIODE REVERSE RECOVERY t rr I rr GATE RESISTOR, R G, (Ohm) V CC = 36V, V GE = ±V, R G(on) = 3Ω, L S = nh,, Inductive Load EMITTER CURRENT, I E, (AMPERES). REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C, (AMPERES) SWITCHING TIMES, (μs) TIME CHARACTERISTICS V CC = 36V, V GE = ±V, R G(on) = 3Ω, R G(off) = 3Ω, L S = nh,, Inductive Load TBD. COLLECTOR CURRENT, I C, (AMPERES) REVERSE BIAS SAFE OPERATING AREA (RBSOA) V CC 4V, V GE = ±V, R G(off) = 3Ω, COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) 6

7 QIC68 8 Amperes/6 Volts REVERSE RECOVERY CURRENT, I rr, (AMPERES) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) V CC 4V, di/dt < A/μs, EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c').2..8 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS.6 Per Unit Base = R th(j-c) =.4. C/W (IGBT) R th(j-c) =.2. C//W (FWDi).... TIME, (s) 7

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