CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts

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1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58± ±.1 D 3.1±.2 79.±.5 E F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K L 1.91± ±.6 M.94± ±.5 Dimensions Inches Millimeters N P.98 Q.22±.2 5.7±.5 R.18±.8Dia. 4.5±.2 Dia. S.4±.8 1.±.2 T Min. Min. U V -5-5 W.2 Max..5 Max. X.6±.2 1.6±.5 Y.23±.8.6±.2 Description: s are low profile, thermally efficient, transfer mold modules. Each module consists of a threephase diode converter section, a three-phase inverter section and a brake circuit. Open emitters allow the designer to sense the current in each phase leg for accurate and low cost current sensing. A thermistor is included in the package for sensing the baseplate temperature. 5th Generation CSTBT chips yield low loss. The module is completely Pb-Free and hence RoHS compliant. Features: Compact Package Only 5.7mm Thick One Package for Entire Family Thermistor Open Emitters Applications: AC Motor Control Servo Motors Robotics HVAC Inverters Ordering Information: is a 12 Volt, 15 Ampere module. 1/6 1

2 Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol Units Junction Temperature Tj -2 to 125 C Storage Temperature Tstg -2 to 125 C Mounting Torque, M4 Mounting Screws 13 in-lb Module Weight Typical 52 Grams Isolation Voltage (6Hz, Sinusoidal, AC 1 Min., Applied Between Pins and Heatsink) VISO 25 Volts Inverter Part Collector-Emitter Voltage (G-E Short) VCES 12 Volts Gate-Emitter Voltage (C-E Short) VGES ±2 Volts Collector Current* (DC, TC = 1 C) IC 15 Amperes Peak Collector Current** (Pulse) ICM 3 Amperes Maximum Collector Dissipation (TC = 25 C) PC 113 Watts Emitter Current* (DC, TC = 64 C) IE*** 15 Amperes Peak Emitter Current** (Pulse) IEM*** 3 Amperes Brake Part Collector-Emitter Voltage (G-E Short) VCES 12 Volts Gate-Emitter Voltage (C-E Short) VGES ±2 Volts Collector Current* (DC, TC = 1 C) IC 1 Amperes Peak Collector Current** (Pulse) ICM 2 Amperes Maximum Collector Dissipation (TC = 25 C, Tj < 15 C) PC 14 Watts Repetitive Peak Reverse Voltage (Clamp Diode Part) VRRM 12 Volts Forward Current (Clamp Diode Part, Tj < 15 C) IFM 1 Amperes Converter Part Repetitive Peak Reverse Voltage VRRM 16 Volts Recommended AC Input Voltage) Ea 44 Volts DC Output Current (Three-phase Rectifying Circuit) IO 15 Amperes Surge Forward Current (1/2 Cycle at 6 Hz, Peak Value, Non-repetitive) IFSM 245 Amperes I 2 t for Fusing (Value for 1 Cycle of Surge Current) I 2 t 252 A 2 s *TC is measured just underneath the power chip. **Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max.) rating. ***IE, VEC, trr, and Qrr represent characteristics of the anti-paralleled emitter-to-collector free-wheel diode (FWDi). 2 1/6

3 Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Inverter Part Collector-Cutoff Current ICES VCE = VCES, VGE = V 1. ma Gate-Emitter Threshold Voltage VGE(th) IC = ma, VCE = 1V Volts Gate-Emitter Cutoff Current IGES VGE = 2V, VCE = V 1. µa Collector-Emitter VCE(sat) IC = 15A, VGE = 15V, Tj = 25 C 1.8 Volts Saturation Voltage* IC = 15A, VGE = 15V, Tj = 125 C 2. Volts Input Capacitance Cies 3.24 nf Output Capacitance Coes VCE = 1V, VGE = V, f = 1MHz.3 nf Reverse Transfer Capacitance Cres.6 nf Total Gate Charge QG VCC = 6V, IC = 15A, VGE = 15V 1 nc Turn-on Delay Time td(on) 1 ns Turn-on Rise Time tr VCC = 6V, IC = 15A, 75 ns Turn-off Delay Time td(off) VGE = ±15V, RG = 22Ω, 3 ns Turn-off Fall Time tf Tj = 25 C, 4 ns Reverse Recovery Time** trr 2 ns Reverse Recovery Charge** Qrr.35 µc Emitter-Collector Voltage** VEC IE = 15A, VGE = V Volts External Gate Resistance Rg Ω Brake Part Collector-Cutoff Current ICES VCE = VCES, VGE = V 1. ma Gate-Emitter Threshold Voltage VGE(th) IC = 1.mA, VCE = 1V Volts Gate-Emitter Cutoff Current IGES VGE = 2V, VCE = V 1. µa Collector-Emitter VCE(sat) IC = 1A, VGE = 15V, Tj = 25 C 1.8 Volts Saturation Voltage* IC = 1A, VGE = 15V, Tj = 125 C 2. Volts Input Capacitance Cies 2.4 nf Output Capacitance Coes VCE = 1V, VGE = V, f = 1MHz.16 nf Reverse Transfer Capacitance Cres.4 nf Total Gate Charge QG VCC = 6V, IC = 1A, VGE = 15V 67 nc Turn-on Delay Time td(on) 1 ns Turn-on Rise Time tr VCC = 6V, IC = 1A, 75 ns Turn-off Delay Time td(off) VGE = ±15V, RG = 33Ω, 3 ns Turn-off Fall Time tf Tj = 25 C, 4 ns Reverse Recovery Time trr 2 ns Reverse Recovery Charge Qrr.3 µc Forward Voltage Drop VFM IF = 1A, Clamp Diode Part Volts External Gate Resistance Rg Ω *Pulse width and repetition rate should be such as to cause negligible temperature rise. **TC is measured just underneath the power chip. 1/6 3

4 Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Converter Part Repetitive Reverse Current IRRM VR = VRRM, Tj = 125 C 1. ma Forward Voltage Drop VFM IF = 15A Volts Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Common Rating Contact Thermal Resistance Rth(c-f) Case-to-Fin, Thermal Grease Applied.47 C/W Inverter Part Thermal Resistance, Junction to Case Rth(j-c)Q IGBT Part, Per 1/6 Module 1.2 C/W Thermal Resistance, Junction to Case Rth(j-c)D FWDi Part, Per 1/6 Module 1.7 C/W Brake Part Thermal Resistance, Junction to Case Rth(j-c)Q IGBT Part 1.2 C/W Thermal Resistance, Junction to Case Rth(j-c)D FWDi Part 1.7 C/W Converter Part Thermal Resistance, Junction to Case Rth(j-c) Per 1/6 Module 1.3 C/W NTC Thermistor Part Resistance Rth TC = 25 C kω B Constant* B(25/1) Resistance at 25 C, 1 C 345 K *B = (InR1 InR2) / (1/T1 1/T2) where R1 is the resistance at T1(K), R2 is the resistance at T2(K). 4 1/6

5 COLLECTOR CURRENT, I C, (AMPERES) OUTPUT CHARACTERISTICS V GE = 19V VOLTAGE, V CE, (VOLTS) SATURATION VOLTAGE, V CE(sat), (VOLTS) V GE = 15V SATURATION VOLTAGE, V EC, (VOLTS) COLLECTOR-CURRENT, I C, (AMPERES) EMITTER-CURRENT, I E, (AMPERES) CAPACITANCE VS. V CE SWITCHING TIME VS. COLLECTOR CURRENT SWITCHING TIME VS. GATE RESISTANCE CAPACITANCE, C ies, C oes, C res, (pf) C ies 1 3 C oes 1 2 C res V GE = V VOLTAGE, V CE, (VOLTS) SWITCHING TIME, (ns) 1 2 V CC = 6V 1 1 R G = 22Ω t f t r COLLECTOR CURRENT, I C, (AMPERES) SWITCHING TIME, (ns) 1 2 V CC = 6V I C = 15A t f t r GATE RESISTANCE, R G, (Ω) SWITCHING LOSS, E on, E off, E rr, (mj/pulse) SWITCHING LOSS VS. COLLECTOR CURRENT V CC = 6V R G = 22Ω E rr E on E off COLLECTOR CURRENT, I C, (AMPERES) 3 SWITCHING LOSS, E on, E off, E rr, (mj/pulse) SWITCHING LOSS VS. GATE RESISTANCE V CC = 6V I C = 15A E rr E on E off GATE RESISTANCE, R G, (Ω) 25 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) 1 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - IGBT & FWDi) Single Pulse T C = 25 C IGBT FWDi TIME, (s) 1/6 5

6 DIODE FORWARD VOLTAGE, V F, (VOLTS) DIODE FORWARD VOLTAGE CHARACTERISTICS (CONVERTER PART - TYPICAL) V GE = 15V DIODE FORWARD CURRENT, I F, (AMPERES) SATURATION VOLTAGE, V CE(sat), (VOLTS) (BRAKE PART - TYPICAL) V GE = 15V SATURATION VOLTAGE, V EC, (VOLTS) (BRAKE PART - TYPICAL) COLLECTOR-CURRENT, I C, (AMPERES) EMITTER-CURRENT, I E, (AMPERES) /6