Ultrafast, Soft Recovery Diode BASE CATHODE 3 CATHODE
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1 Bulletin PD -.34 rev. / HEXFRED TM HF5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count BSE CTHODE 4 3 CTHODE NODE V R = 6V V F (typ.)* =.3V I F(V) = 5 Q rr (typ.)= 8nC I RRM (typ.) = 4. t rr (typ.) = 9ns di (rec)m /dt (typ.)* = 6/µs Description International Rectifier's HF5PB6 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 volts and 5 amps continuous current, the HF5PB6 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HF5PB6 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. TO-47C (Modified) bsolute Maximum Ratings Parameter Max Units V R Cathode-to-node Voltage 6 V I T C = C Continuous Forward Current 5 I FSM Single Pulse Forward Current 5 I FRM Maximum Repetitive Forward Current 6 P T C = 5 C Maximum Power Dissipation 74 W P T C = C Maximum Power Dissipation 9 T J Operating Junction and T STG Storage Temperature Range -55 to +5 C * 5 C
2 HF5PB6 Bulletin PD-.34 rev. / Electrical (unless otherwise specified) Parameter Min Typ Max Units Test Conditions V BR Cathode node Breakdown Voltage 6 V I R = µ.3.7 I F = 5 V FM Max Forward Voltage.5. V I F = 3 See Fig...6 I F = 5, I. V R = V R Rated See Fig. RM Max Reverse Leakage Current µ 4, V R =.8 x V R Rated D Rated C T Junction Capacitance 5 5 pf V R = V See Fig. 3 L S Series Inductance nh Measured lead to lead 5mm from package body Dynamic Recovery (unless otherwise specified) Parameter Min Typ Max Units Test Conditions t rr Reverse Recovery Time 9 I F =., di f/dt = /µs, V R = 3V t rr See Fig. 5, 4 6 ns t rr 74 I F = 5 I RRM Peak Recovery Current I RRM See Fig V R = V Q rr Reverse Recovery Charge 8 8 nc Q rr See Fig. 7 6 di f/dt = /µs di (rec)m/dt Peak Rate of Fall of Recovery Current 88 /µs di (rec)m/dt During t b See Fig. 8 6 Thermal - Mechanical Characteristics Parameter Min Typ Max Units T lead! Lead Temperature 3 C R thjc Thermal Resistance, Junction to Case.7 R thj" Thermal Resistance, Junction to mbient 4 K/W R thcs# Wt Thermal Resistance, Case to Heat Sink Weight.5 6. g. (oz) Mounting Torque 6. Kg-cm 5. lbf in!.63 in. from Case (.6mm) for sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased
3 HF5PB6 Bulletin PD-.34 rev. / Instantaneous Forward Current - I F () T J= 5 C T J= 5 C T J = 5 C Forward Voltage Drop -- V FM (V) ( V ) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Junction Capacitance -C T (pf) Reverse Current - I R (µ) Reverse Voltage - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage T J = 5 C T = 5 C J Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Response (Z thjc ). D = SINGLE PULSE t (THERML RESPONSE) Notes:. Duty factor D = t / t. Peak T J = P x Z + TC DM thjc t, Rectangular Pulse Duration (sec) PDM Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics t 3
4 HF5PB6 Bulletin PD-.34 rev. / 8 I F = 3 I F = 5 I F = 5. 5 V R= V I F = 3 I F = 5 I F = 5. trr- (ns) 6 Irr- ( ) V R = V di f /dt - (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di f /dt di f/dt - (/µs) Fig. 6 - Typical Recovery Current vs. di f /dt 8 V R = V V R= V 6 I F = 3 Qrr- (nc) 4 I F = 5 I F = 5. di (rec) M/dt- ( /µs) I F = 3 I F = 5 I F = 5. di f /dt - (/µs) Fig. 7 - Typical Stored Charge vs. di f /dt di f /dt - (/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt 4
5 HF5PB6 Bulletin PD-.34 rev. / 3 REVERSE RECOVERY CIRCUIT IF ta trr t b V R = V. Ω I RRM Q rr.5 I RRM di(rec)m/dt 5 4 L = 7µH.75 I RRM D.U.T. di f /dt dif/dt DJUST G D S IRFP5. dif/dt - Rate of change of current through zero crossing. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through.75 IRRM and.5 IRRM extrapolated to zero current 4. Qrr - rea under curve defined by trr and IRRM trr X IRRM Qrr = 5. di(rec)m/dt - Peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. - Reverse Recovery Waveform and Definitions 5
6 HF5PB6 Bulletin PD-.34 rev. / Conforms to JEDEC Outline TO-47C MODIFIED Dimensions in millimeters and inches WORLD HEDQURTERS: 33 Kansas St., El Segundo, California 945 U.S.. Tel: (3) Fax: (3) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CND: 5 Lincoln Court, Brampton, Markham, Ontario L6T3Z. Tel: (95) 453. Fax: (95) IR GERMNY: Saalburgstrasse 57, 635 Bad Homburg. Tel: Fax: IR ITLY: Via Liguria 49, 7 Borgaro, Torino. Tel: Fax: IR FR EST: K&H Bldg., F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7. Tel: IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower,3-, Singapore Tel: IR TIWN: 6 Fl. Suite D.7, Sec., Tun Haw South Road, Taipei, 673, Taiwan. Tel: Fax-On-Demand: Data and specifications subject to change without notice. 6
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