SMPS MOSFET. V DSS Rds(on) max I D
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- Alexander Williams
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1 SMPS MOSFET PD 980 IRFIB7N50 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, valanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and valanche Voltage and Current l Effective Coss specified ( See N ) HEXFET Power MOSFET V DSS Rds(on) max I D 500V 0.52Ω 6.6 TO220 FULLPK G D S bsolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 0V 6.6 I T C = C Continuous Drain Current, V 0V 4.2 I DM Pulsed Drain Current 44 P C = 25 C Power Dissipation 60 W Linear Derating Factor 0.48 W/ C V GS GatetoSource Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 6.9 V/ns T J Operating Junction and 55 to 50 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torqe, 632 or M3 screw 0 lbf in (.N m) pplicable Off Line SMPS Topologies: l Two Transistor Forward l Half & Full Bridge Convertors l Power Factor Correction Boost Notes through are on page 8 6/5/99
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 500 V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.6 V/ C Reference to 25 C, I D = m R DS(on) Static DraintoSource OnResistance 0.52 Ω V GS = 0V, I D = 4.0 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ I DSS DraintoSource Leakage Current 25 V µ DS = 500V, V GS = 0V 250 V DS = 400V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage V GS = 30V n GatetoSource Reverse Leakage V GS = 30V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 6. S V DS = 50V, I D = 6.6 Q g Total Gate Charge 52 I D = Q gs GatetoSource Charge 3 nc V DS = 400V Q gd GatetoDrain ("Miller") Charge 8 V GS = 0V, See Fig. 6 and 3 t d(on) TurnOn Delay Time 4 V DD = 250V t r Rise Time 35 ns I D = t d(off) TurnOff Delay Time 32 R G = 9.Ω t f Fall Time 28 R D = 22Ω,See Fig. 0 C iss Input Capacitance 423 V GS = 0V C oss Output Capacitance 208 V DS = 25V C rss Reverse Transfer Capacitance 8. pf ƒ =.0MHz, See Fig. 5 C oss Output Capacitance 2000 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 55 V GS = 0V, V DS = 400V, ƒ =.0MHz C oss eff. Effective Output Capacitance 97 V GS = 0V, V DS = 0V to 400V valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy 275 mj I R valanche Current E R Repetitive valanche Energy 6.0 mj Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 2. R θj Junctiontombient 65 C/W Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 6.6 (Body Diode) showing the G I SM Pulsed Source Current integral reverse 44 (Body Diode) pn junction diode. S V SD Diode Forward Voltage.5 V T J = 25 C, I S =, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = Q rr Reverse RecoveryCharge µc di/dt = /µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) 2
3 I D, DraintoSource Current () 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D, DraintoSource Current () 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, DraintoSource Voltage (V) 20µs PULSE WIDTH 4.5V T J = 50 C 0 V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, DraintoSource Current () 0 T = 50 J C T J = 25 C V DS= V 20µs PULSE WIDTH V GS, GatetoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 3.0 I D = V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature 3
4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V DS, DraintoSource Voltage (V) V GS, GatetoSource Voltage (V) I = D 6.6 V DS = 400V V DS = 250V V DS = V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. DraintoSource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage 0 OPERTION IN THIS RE LIMITED BY R DS(on) I SD, Reverse Drain Current () 0 T J = 50 C T J = 25 C V GS = 0 V V SD,SourcetoDrain Voltage (V) I D, Drain Current () 0 0us us ms 0ms TC = 25 C TJ = 50 C Single Pulse V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 7.0 V DS R D I D, Drain Current () Fig 0a. Switching Time Test Circuit V DS 90% R G V GS 0V Pulse Width µs Duty Factor 0. % D.U.T. V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 0 Thermal Response (Z thjc ) D = PDM 0. t t2 SINGLE PULSE Notes: (THERML RESPONSE). Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 5
6 Fig 2a. Unclamped Inductive Test Circuit I S R G V DS 20V tp tp L D.U.T I S 0.0Ω V (BR)DSS Fig 2b. Unclamped Inductive Waveforms Q G 5V DRIVER V DD E S, Single Pulse valanche Energy (mj) TOP BOTTOM I D Starting T, Junction Temperature ( J C) Fig 2c. Maximum valanche Energy Vs. Drain Current 0 V Q GS Q GD 660 V G 2V V GS Current Regulator Same Type as D.U.T..2µF 50KΩ 3m.3µF Charge Fig 3a. Basic Gate Charge Waveform D.U.T. V DS V DSav, valanche Voltage (V) I av, valanche Current () I G I D Current Sampling Resistors Fig 2d. Typical DraintoSource Voltage Fig 3b. Gate Charge Test Circuit Vs. valanche Current 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Repplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For NChannel HEXFETS 7
8 Package Outline TO220 Fullpak Outline Dimensions are shown in millimeters (inches) 6.00 (.630) 5.80 (.622) 3.70 (.540) 3.50 (.530) 0.60 (.47) 0.40 (.409) (.33) ø 3.0 (.23) 3.70 (.45) 3.20 (.26).5 (.045) MIN (.30) 3.0 (.22) B 4.80 (.89) 4.60 (.8) 7.0 (.280) 6.70 (.263) 2.80 (.0) 2.60 (.02) LED SSIGNMENTS G TE 2 DR IN 3 SO UR CE NOTES: DIMENSIONING & TOLERNCING PE R NS I Y4.5M, CONTROLLING DIMENSION: INCH. C D 2.54 (.) 2X Part Marking Information TO220 Fullpak EXMPLE : 3X.40 (.055).05 (.042) 0.90 (.035) 3X 0.70 (.028) THIS IS N IRFI840G W ITH SSEMBLY LOT CODE E40 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 4.5mH R G = 25Ω, I S =. (See Figure 2) ƒ I SD, di/dt 40/µs, V DD V (BR)DSS, T J 50 C 0.25 (.00) M M B INTERNTIONL R E CT IF IER LO GO SSEMBLY LO T CO DE 0.48 (.09) 3X 0.44 (.07) 2.85 (.2) 2.65 (.04) IRFI840G E Pulse width 300µs; duty cycle 2%. MINIMUM CREEPGE DISTNCE BETW EEN BCD = 4.80 (.89) PRT NUMBER DTE CODE (YYW W ) YY = YER WW = WEEK C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS Uses IRFBN50 data and test conditions t=60s,f=60hz B WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) IR GRET BRITIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CND: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower, 3, Singapore Tel: IR TIWN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Tel: Data and specifications subject to change without notice. 6/99 8
SMPS MOSFET. V DSS Rds(on) max I D
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HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
More informationV DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More information1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationIRLIZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 30A. Description. Thermal Resistance PD A TO-220 FULLPAK
l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationIRLL3303. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.031Ω I D = 4.6A SOT-223. Thermal Resistance PD C
l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationSMPS MOSFET. Symbol Parameter Max. Units
P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationPower MOSFET. IRFIB7N50APbF SiHFIB7N50A-E3 IRFIB7N50A SiHFIB7N50A T C = 25 C
Power MOSFET IRFIB7N50, SiHFIB7N50 PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.52 Q g (Max.) (nc) 52 Q gs (nc) 3 Q gd (nc) 8 Configuration Single FETURES Low Gate Charge Q g Results in Simple
More informationParameter Maximum Units
l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature PChanne Fast Switching Fuy vaanche Rated LeadFree Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More information