IRLIZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 30A. Description. Thermal Resistance PD A TO-220 FULLPAK
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- Bernard Hardy
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1 l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G P IRLIZ44N HEXFET Power MOSFET S V SS = 55V R S(on) = 0.022Ω I = 30 The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using TO-220 FULLPK a 0 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. bsolute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 30 T C = 0 C Continuous rain Current, V V 22 I M Pulsed rain Current 60 C = 25 C Power issipation 45 W Linear erating Factor 0.3 W/ C V GS Gate-to-Source Voltage ± 6 V E S Single Pulse valanche Energy 2 mj I R valanche Current 25 E R Repetitive valanche Energy 4.5 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 screw lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 3.3 R θj Junction-to-mbient 65 C/W 8/25/97
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 55 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m V GS = V, I = 7 R S(on) Static rain-to-source On-Resistance Ω V GS = 5.0V, I = V GS = 4.0V, I = 4 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 2 S V S = 25V, I = 25 I SS rain-to-source Leakage Current 25 V S = 55V, V GS = 0V µ 250 V S = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 0 V GS = 6V n Gate-to-Source Reverse Leakage -0 V GS = -6V Q g Total Gate Charge 48 I = 25 Q gs Gate-to-Source Charge 8.6 nc V S = 44V Q gd Gate-to-rain ("Miller") Charge 25 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On elay Time V = 28V t r Rise Time 84 I ns = 25 t d(off) Turn-Off elay Time 26 R G = 3.4Ω, V GS = 5.0V t f Fall Time 5 R =.Ω, See Fig. Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 400 V S = 25V pf C rss Reverse Transfer Capacitance 50 ƒ =.0MHz, See Fig. 5 C rain to Sink Capacitance 2 ƒ =.0MHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 30 (Body iode) showing the I SM Pulsed Source Current integral reverse G 60 (Body iode) p-n junction diode. S V S iode Forward Voltage.3 V T J = 25 C, I S = 7, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 25 Q rr Reverse RecoveryCharge µc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V = 5V, starting T J = 25 C, L = 470µH R G = 25Ω, I S = 25. (See Figure 2) ƒ I S 25, di/dt 270/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2%. t=60s, ƒ=60hz Uses IRLZ44N data and test conditions
3 I, rain-to-source Current () 00 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V I, rain-to-source Current () 00 0 VGS TOP 5V 2V V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C 0. 0 V S, rain-to-source Voltage (V) 20µs PULSE WITH T J = 75 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-s ource C urrent ( ) 00 0 T = 25 C J V S= 25V 20µs PULSE W ITH V GS T = 75 C J, Gate-to-Source Voltage (V) R S(on), rain-to-s ource On Resistance (Normalized) I = 4 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
4 C, Capacitance (pf) 2800 V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE 2400 C rss = C gd C is s C oss = C ds C gd C oss 800 C rss V S, rain-to-source Voltage (V) V GS, Gate-to-Source Voltage (V) I = 25 V S = 44V V S = 28V FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J I, rain Current ( ) 00 0 OPE RTION IN THIS RE LIMITE BY RS(on) µs 0µs ms V GS = 0V V S, Source-to-rain Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage T C = 25 C ms T J = 75 C Single Pulse 0 V S, rain-to-source Voltage (V) Fig 8. Maximum Safe Operating rea
5 I, rain Current () R G V GS 5.0V V S Pulse Width µs uty Factor 0. % R.U.T. Fig a. Switching Time Test Circuit - V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature V S 90% % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J=P M x Z thjc T C t, Rectangular Pulse uration (sec) PM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 L V S.U.T. R G V V I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)SS t p V E S, Single Pulse valanche Energy (mj) TOP BOTTOM V = 25V Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. rain Current I 7 25 V S I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q G.U.T. V - S V GS V G 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For N-Channel HEXFETS
8 Package Outline TO-220 Fullpak Outline imensions are shown in millimeters (inches) 6.00 (.630) 5.80 (.622) 3.70 (.540) 3.50 (.530).60 (.47).40 (.409) (.33) ø 3. (.23) (.45) 3.20 (.26).5 (.045) MIN (.30) 3. (.22) - B (.89) 4.60 (.8) 7. (.280) 6.70 (.263) 2.80 (.) 2.60 (.2) LE SSIGN MENTS - G TE 2 - RIN 3 - SOURCE NO TES : IMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING IMENSION: INCH. C 3X.40 (.055).05 (.042) 2.54 (.0) 2X 0.90 (.035) 3X 0.70 (.028) Part Marking Information TO-220 Fullpak 0.25 (.0) M M B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRFI840G WITH W ITH SSEMBLY LOT LOT COE COE 9BM E40 INTERNTIONL INTERNTIONL RECTIFIER RECTIFIER LOGO LOGO SSEMBLY LOT LOT COE 0.48 (.09) 3X 0.44 (.07) 2.85 (.2) 2.65 (.4) IRF IRFI840G B E40 M 9245 MINIMUM CREEPGE ISTNCE BETWEEN -B-C- = 4.80 (.89) PRT NUMBER PRT NUMBER TE COE (YYWW) TE COE YY (YYWW = YER ) WW YY = YER WEEK WW = WEEK B WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Building, Singapore 036 Tel: ata and specifications subject to change without notice. 8/97
9 Note: For the most current drawings please refer to the IR website at:
Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
More informationIRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance
l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier
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l Logic-Level Gate rive l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
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l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
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More informationW Linear Derating Factor 0.016
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
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dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fuy vaanche Rated Lead-Free escription Fifth Generation HEXFETs from Internationa Rectifier
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l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
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P - 9.1279 HEXFET Power MOSFET dvanced Process Technoogy Utra Low On-Resistance ynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
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pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9878C IRF830 HEXFET Power MOSFET V DSS Rds(on) max I D 500V.40Ω 5.0 Benefits l
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SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
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pplications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
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l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
More informationIRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRF7601 PD D. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.035Ω
P - 9.26 Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET Very Sma SOIC Package Low Profie (
More informationLinear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
P- 93768A Si4435Y HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω escription These P-channel
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationV DSS R DS(on) max I D. 20V GS = 10V 20A. 160 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters in Networking Systems l Lead-Free S S 2 IRF377PbF HEXFET Power MOSFET 8 7 P - 9579
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationParameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
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pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9809B IRFBN50 HEXFET Power MOSFET V DSS Rds(on) max I D 500V 0.52Ω Benefits l
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
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P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
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PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
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Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationV DSS R DS(on) max I D. 30V GS = 10V 13A. 100 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems 8 S 2 7 S
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationIRF630N IRF630NS IRF630NL. HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.30Ω I D = 9.3A
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationTO-220AB contribute to its wide acceptance throughout the industry.
dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationIRFY9240CM HEXFET POWER MOSFET. Absolute Maximum Ratings. Product Summary. Features. Provisional Data Sheet No. PD 9.
Provisional Data Sheet No. PD 9.1295 HEXFET POWER MOSFET IRFY9240CM P-CHNNEL -200 Volt, 0.51Ω HEXFET International Rectifier s HEXFET technology is the key to its advanced line of power MOSFET transistors.
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Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to
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Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
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