Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.

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1 7MBR5U12 IGBT Modules IGBT MODULE (U series) 12 / 5 / PIM Features Low CE(sat) Compact Package P.C. Board Mount Module Converter Diode Bridge Dynamic Brake Circuit pplications Inverter for Motoe Drive C and DC Servo Drive mplifier Uninterruptible Power Supply Maximum ratings and characteristics bsolute maximum ratings (Tc= C unless otherwise specified) Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage CES GES 12 ±2 IC Continuous Tc= C 5 Collector current Tc=8 C 35 ICP 1ms Tc= C Tc=8 C 1 7 -IC -IC pulse Duty=7% 1ms 5 1 Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current PC CES GES IC 1 device Continuous Tc= C Tc=8 C 12 ±2 15 W ICP 1ms Tc= C Tc=8 C 5 3 Collector power disspation Repetitive peak reverse voltage Repetitive peak reverse voltage PC RRM RRM 1 device W verage output current Surge current (Non-Repetitive) IO IFSM 5Hz/6Hz sine wave Tj=15 C, 1ms 5 26 I 2 t (Non-Repetitive) I 2 t half sine wave s Operating junction temperature Storage temperature Isolation between terminal and copper base *2 Tj Tstg iso C : 1 minute to +1 C C C voltage between thermistor and others *3 C Mounting screw torque 3.5 *1 N m *1 Recommendable value : 2.5 to 3.5 N m (M5) *2 ll terminals should be connected together when isolation test will be done. *3 Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Converter Brake Inverter

2 7MBR5U12 Elecical characteristics ( unless otherwise specified) Item Symbol Condition Characteristics Unit Thermistor Converter Brake Inverter Min. Typ. Max. Zero gate voltage collector current Gate-Emitter leakage current ICES IGES CE=12, GE= CE=, GE=± m n Gate-Emitter threshold voltage GE(th) CE=2, IC=5m Collector-Emitter saturation voltage CE(sat) GE= (terminal) CE(sat) Ic= (chip) 2.35 Input capacitance Turn-on time Cies GE=, CE=1, f=1mhz CC= nf µs IC=5.3.6 Turn-off time (i) GE=±15 RG= 33 Ω Forward on voltage F GE= (terminal) F IF= (chip) 2. Reverse recovery time r IF=5.35 µs Zero gate voltage collector current Gate-Emitter leakage current ICES IGES CE=12, GE= CE=, GE=± m n Collector-Emitter saturation voltage CE(sat) IC= (terminal) CE(sat) GE= Turn-on time (chip) CC= µs IC=.3.6 Turn-off time GE=± Reverse current IRRM RG= 68 Ω R= m Forward on voltage FM IF=5 terminal GE= chip 1. Reverse current Resistance IRRM R R=16 T= C 5 1. m Ω B value B T=1 C T=/5 C K Thermal resistance Characteristics Item Symbol Condition Characteristics Unit Min. Typ. Max. Inverter IGBT.6 Thermal resistance ( 1 device ) Rth(j-c) Inverter FWD.95 Brake IGBT 1.7 C/W Converter Diode.9 Contact thermal resistance * Rth(c-f) With thermal compound.5 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) 22(P1) [Brake] [Inverter] [Thermistor] 8 9 2(Gu) 18(Gv) 16(Gw) 1(R) 2(S) 3(T) 19(Eu) 17(Ev) 15(Ew) 7(B) (U) 5() 6(W) 1(Gb) 13(Gx) 12(Gy) 11(Gz) 1(En) 23(N) 2(N1)

3 7MBR5U12 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= C / chip Tj= 1 C / chip GE= GE= Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) GE=15 / chip / chip Collector - Emitter voltage : CE [ ] Ic=7 Ic=35 Ic= Gate - Emitter voltage : GE [ ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=5, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Cies Cres Coes Collector-Emitter voltage : CE [ 2/div ] Gate - Emitter voltage : GE [ 5/div ] GE CE Gate charge : Qg [ nc ]

4 7MBR5U12 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) cc=6, GE=±15, Rg=33Ω, Tj= C cc=6, GE=±15, Rg=33Ω, 1 1 Switching time :,,, [ nsec ] 1 1 Switching time :,,, [ nsec ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) cc=6, Ic=5, GE=±15, Tj= C cc=6, GE=±15, Rg=33Ω 1 2 Switching time :,,, [ nsec ] 1 1 Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon(1 C) Eon( C) Eoff(1 C) Eoff( C) Err(1 C) Err( C) Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.) cc=6, Ic=5, GE=±15, Tj= 1 C +GE=15,-GE <= 15, RG >= 33Ω,Tj <= 1 C 3 15 Switching loss : Eon, Eoff, Err [ mj/pulse ] Eon 2 1 Eoff Err Gate resistance : Rg [ Ω ] Collector - Emitter voltage : CE [ ]

5 7MBR5U12 Forward current vs. Forward on voltage (typ.) chip Reverse recovery characteristics (typ.) cc=6, GE=±15, Rg=33Ω 1 Forward current : IF [ ] 5 Reverse recovery current : Irr [ ] Reverse recovery time : r [ nsec ] 1 r (1 C) r ( C) Irr (1 C) Irr ( C) Forward on voltage : F [ ] Forward current : IF [ ] [ Converter ] Forward current vs. Forward on voltage (typ.) chip Forward current : IF [ ] Forward on voltage : FM [ ] Transient thermal resistance (max.) [ Thermistor ] Temperature characteristic (typ.) 1. 1 Thermal resistanse : Rth(j-c) [ C/W ] 1..1 IGBT[Brake] FWD[Inverter] Conv.Diode IGBT[Inverter] Resistance : R [ kω ] Pulse width : Pw [ sec ] Temperature [ C ]

6 7MBR5U12 [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= C / chip Tj= 1 C / chip GE= GE= [ Brake ] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) GE=15 / chip / chip Collector - Emitter voltage : CE [ ] Ic=3 Ic=15 Ic= Gate - Emitter voltage : GE [ ] [ Brake ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) GE=, f= 1MHz, Tj= C cc=6, Ic=, Tj= C 1. Capacitance : Cies, Coes, Cres [ nf ] 1..1 Coes 1 2 Cies Cres Collector-Emitter voltage : CE [ 2/div ] Gate - Emitter voltage : GE [ 5/div ] GE CE Gate charge : Qg [ nc ]

7 7MBR5U12 Outline Drawings, mm

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