Symbol Parameter/Test Conditions Values. 200 P tot Power Dissipation Per IGBT T C =25, T Jmax = Symbol Parameter/Test Conditions Values

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1 MMG1W6X6EN 6 1 Six-Pack Module February 17 ersion 1 RoHS Compliant PRODUCT FETURES IGBT 3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with iulated copper base plate and soldering pi for PCB mounting Temperature see included PPLICTIONS C motor control Motion/servo control Inverter and power supplies IGBT-inverter BSOLUTE MXIMUM RTINGS(T C =5 C unless otherwise specified) Symbol Parameter/Test Conditio alues CES Collector Emitter oltage T J =5 6 GES Gate Emitter oltage ± I C T C =5, T Jmax = DC Collector Current T C =7, T Jmax =175 1 I CM Repetitive Peak Collector Current tp=1ms P tot Power Dissipation Per IGBT T C =5, T Jmax = W Diode-inverter BSOLUTE MXIMUM RTINGS (T C =5 C unless otherwise specified) Symbol Parameter/Test Conditio alues RRM Repetitive Reverse oltage T J =5 6 I F() verage Forward Current 1 I FRM Repetitive Peak Forward Current tp=1ms I t, t=1ms, R = 1 S MacMic Science & Technology Co., Ltd. dd:#1, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R.of China Tel.: Fax: Post Code:13 Website: 3

2 MMG1W6X6EN IGBT-inverter ELECTRICL CHRCTERISTICS (T C =5 C unless otherwise specified) Symbol Parameter/Test Conditio Min. Typ. Max. GE(th) Gate Emitter Threshold oltage CE = GE, I C =1.6m CE(sat) Collector Emitter I C =1, GE =15, T J = Saturation oltage I C =1, GE =15, 1.6 I CES Collector Leakage Current CE =6, GE =, T J =5 1 CE =6, GE =, 5 I GES Gate Leakage Current CE =, GE =±15, T J =5 - R gint Integrated Gate Resistor Q g Gate Charge CE =3, I C =1, GE =± C ies Input Capacitance 6. CE =5, GE =, f =1MHz C res Reverse Trafer Capacitance.19 t d(on) Turn on Delay Time CC =3,I C =1 T J =5 7 R G =3.3Ω, t r Rise Time GE =±15, T J =5 Inductive Load t d(off) Turn off Delay Time CC =3,I C =1 T J =5 6 R G =3.3Ω, 9 t f Fall Time GE =±15, T J =5 7 Inductive Load 7 E on Turn on Energy CC =3,I C =1 T J =5.3 R G =3.3Ω,.7 E off Turn off Energy GE =±15, T J =5.5 Inductive Load 3.35 I SC Short Circuit Current tpsc 6µS, GE =15, CC =36 R thjc Junction to Case Thermal Resistance ( Per IGBT).5 5 m m n Ω µc nf nf K /W Diode-inverter ELECTRICL CHRCTERISTICS (T C =5 C unless otherwise specified) Symbol Parameter/Test Conditio Min. Typ. Max. F t rr Forward oltage I F =1, GE =, T J = I F =1, GE =, 1.5 Reverse Recovery Time 13 I I RRM Max. Reverse Recovery Current F =1, R =3 15 di F /dt=-51/μs Q RR Reverse Recovery Charge T J =15 E rec Reverse Recovery Energy.5 R thjcd Junction to Case Thermal Resistance ( Per Diode). µc K /W

3 MMG1W6X6EN NTC CHRCTERISTICS (T C =5 C unless otherwise specified) Symbol Parameter/Test Conditio Min. Typ. Max. R 5 Resistance T C =5 5 B 5/5 R = R 5 exp [B 5/5 (1/T - 1/(9.15 K))] 3375 KΩ K MODULE CHRCTERISTICS (T C =5 C unless otherwise specified) Symbol Parameter/Test Conditio alues T Jmax Max. Junction Temperature 175 T Jop Operating Temperature -~15 T stg Storage Temperature -~15 isol Isolation Breakdown oltage C, 5Hz(R.M.S), t=1minute 3 CTI Comparative Tracking Index > Md Mounting Torque Recommended(M5).5~5 Weight 3 Nm g ge=17 ge=15 ge=13 ge= ge=9 5 GE = CE () Figure 1. Typical Output Characteristics IGBT-inverter CE () Figure. Typical Output Characteristics IGBT-inverter 5

4 MMG1W6X6EN 15 CE = 6 CE =3 I C =1 GE =±15 1 E on E off () Eon Eoff GE () Figure 3. Typical Trafer characteristics IGBT-inverter Rg(Ω) Figure. Switching Energy vs Gate Resistor IGBT-inverter J) E on E off (m 6 CE =3 R g =3.3Ω GE =±15 Eon Eoff R g =3.3Ω GE =± Figure 5. Switching Energy vs Collector Current IGBT-inverter CE () Figure 6. Reverse Biased Safe Operating rea IGBTinverter DC I F () 6 DC T C ( ) T C ( ) Figure 7. Collector Current vs Case temperature Figure. Forward current vs Case temperature IGBT -inverter Diode -inverter 6

5 MMG1W6X6EN I F () E REC () 3 CE =3 I F =1 5 1 F () Rg(Ω) Figure 9. Diode Forward Characteristics Diode -inverter Figure 1. Switching Energy vs Gate Resistor Diode - inverter CE =3 R g =3.3Ω J) E REC ( Z thjc (K/W W) IGBT DIODE I F () Figure 11. Switching Energy vs Forward Current Diode-inverter Rectangular Pulse Duration(S) Figure 1. Traient Thermal Impedance of Diode and IGBT-inverter R (Ω) T C ( ) Figure 13. NTC Characteristics 7

6 MMG1W6X6EN Figure 1. Circuit Diagram Dimeio in (mm) Figure 15. Package Outline

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