1200 V 600 A IGBT Module
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- Suzanna McDowell
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1 1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included max = 175 C Agency Approvals Applications AGENCY AGENCY FILE NUMBER E71639 Industrial and servo drives Solar inverters High-power converters UPS Welding RoHS compliant Characteristics (T C Symbol Parameters Test Conditions Values Unit max Max. Junction Temperature 175 C op Operating Temperature -40~150 C T stg Storage Temperature -40~125 C V isol Isolation Breakdown Voltage AC, 50 Hz(R.M.S), t = 1 minute 3000 V Torque to heatsink Recommended (M5) 2.5~5 N m lolerminal Recommended (M6) 3~5 N m Weight 350 g Absolute Maximum Ratings (T C Symbol Parameters Test Conditions Values Unit IGBT V CES Collector Emitter Voltage = 25 C 1200 V V GES Gate Emitter Voltage ±20 V T DC Collector Current C = 25 C 750 A T C = 80 C 600 A M Repetitive Peak Collector Current t p = 1 ms 1200 A P tot Power Dissipation Per IGBT 2500 W Diode V RRM Repetitive Reverse Voltage = 25 C 1200 V I F(AV) Average Forward Current T C = 25 C 600 A I FRM Repetitive Peak Forward Current t p = 1ms 1200 A I 2 t = 125 C, t = 10 ms, V R = 0 V 45 KA 2 s 331 1
2 1200 V 600 A IGBT Electrical and Thermal Specifications (T C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate Emitter Threshold Voltage V CE = V GE, = 24 ma V V CE(sat) ES Collector Emitter Saturation Voltage chip terminal Collector Leakage Current = 15 V, = 25 C = 15 V, = 125 C 1.9 = 15 V, = 25 C = 15 V, = 125 C 2.4 V CE = 1200 V, V GE = 0 V, = 25 C 100 μa V CE = 1200 V, V GE = 0 V, = 125 C 1 ma I GES Gate Leakage Current V CE = 0 V, V GE = ±15 V, = 125 C na R Gint Integrated Gate Resistor 0.5 Ω Q g Gate Charge V CE = 600 V, = 600 A, V GE = ±15 V 3.4 μc C ies Input Capacitance 60.5 nf V CE = 25 V, V GE = 0 V, f = 1 MHz C res Reverse Transfer Capacitance 1.8 nf t d(on) t r t d(off) t f E on E off I SC Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Energy Turn-off Energy Short Circuit Current V CC = 600 V = 600 A R G = 5 Ω V GE = ±15 V Inductive Load t psc 10 μs, V GE = 15 V; = 125 C, V CC = 600 V = 25 C 250 ns = 125 C 280 ns = 25 C 220 ns = 125 C 240 ns = 25 C 1000 ns = 125 C 1100 ns = 25 C 170 ns = 125 C 190 ns = 25 C 20 mj = 125 C 35 mj = 25 C 105 mj = 125 C 120 mj V V 2400 A R thjc Junction-to-Case Thermal Resistance (Per IGBT) 0.06 K/W Diode V F Forward Voltage chip I F = 0 V, = 25 C V I F = 0 V, = 125 C 2.2 V t RR Reverse Recovery Time 330 ns I I F = 600 A, V R = 600 V RRM Max. Reverse Recovery Current 305 A di F /dt = A/µs Q RR Reverse Recovery Charge = 125 C 96 μc E rec Reverse Recovery Energy 42 mj R thjcd Junction-to-Case Thermal Resistance (Per Diode) 0.1 K/W NTC Characteristics (T C Symbol Parameters Test Conditions Min Typ Max Unit R 25 Resistance T c = 25 C 5 KΩ B 25/50 R 2 = R 25 exp [B 25/50 (1/T 2-1/((298, 15 K))] 3375 K 332 2
3 1200 V 600 A IGBT Figure 1: Typical Output Characteristics Figure 2: Typical Output Characteristics = 125 C Figure 3: Typical Transfer Characteristics Figure 4: Switching Energy vs. Gate Resistor Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 3 333
4 1200 V 600 A IGBT Figure 7: Collector Current vs Case temperature IGBT -inverter Figure 8: Forward current vs Case temperature Diode -inverter Figure 9: Diode Forward Characteristics Diode -inverter Figure 10: Switching Energy vs Gate Resistor Diode -inverter Figure 11: Switching Energy vs Forward Current Diode-inverter Figure 12: Transient Thermallmpedance of Diode and IGBT -inverter 334 4
5 1200 V 600 A IGBT Figure 13: NTC Characteristics Circuit Diagram R ( ) R T C C Dimensions-Package WB The foot pins are in gold / nickel coating Packing Options Part Number Marking Weight Packing Mode M.O.Q 350 g Bulk Pack 60 Part Numbering System Part Marking System MG12600 WB - B R2 MM PRODUCT TYPE M: Power MODULE TYPE G: IGBT VOLTAGE RATING 12: 1200 V CURRENT RATING 600: 600 A ASSEMBLY SITE WAFER TYPE CIRCUIT TYPE 2x(IGBT+FWD) PACKAGE TYPE LOT NUMBER Space reserved for QR code 335 5
6 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Littelfuse:
Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
12V 3A Module RoHS Features 3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft
Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
6V 6A Module MG66WB-BN4MM RoHS Features High short circuit capability, self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling
Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
RoHS Features High short circuit capability, self limiting short circuit current 3 CHIP(rench+Field Stop technology) (sat) with positive temperature coefficient Fast switching and short tail current Free
Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
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Symbol Parameters Test Conditions Min Typ Max Unit T J. max Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
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provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
AOKS40B65H1/AOTS40B65H1
AOKS4B5H/AOTS4B5H 5V, 4AAlpha IGBT TM General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching
10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
RGTVX6TS65 650V 80A Field Stop Trench IGBT
65V 8A Field Stop Trench IGBT Outline V CES 65V TO-247N I C( C) 8A V CE(sat) (Typ.).5V P D 44W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching & Low Switching Loss
V23990-P589-A41-PM target datasheet. Maximum Ratings. Types. Tj=25 C, unless otherwise specified. Input Rectifier Diode. Inverter Transistor
2399-P589-41-PM flowpim 1 3rd gen / Features 3~ rectifier, BRC, Inverter, NTC ery compact housing, easy to route IGBT4 / EmCon4 technology for low saturation losses and improved EMC behaviour flowpim1
RGW00TK65 650V 50A Field Stop Trench IGBT
RGWTK65 65V 5A Field Stop Trench IGBT Outline V CES 65V TO-3PFM I C ( ) 26A V CE(sat) (Typ.).5V@I C =5A P D 89W ()(2)(3) Features ) Low Collector - Emitter Saturation Voltage 2) High Speed Switching 3)
Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
Is Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
V CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol
AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very
V CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L
AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
IGBT ECONO3 Module, 150 A
IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature
CM600YE2N-12F / CM600YE2P-12F TLI-Series (Three Level Inverter) IGBT 600 Amperes/600 Volts
CM6YN-12F / CM6YP-12F TLI-Series (Three Level Inverter) IGBT P V Q W Q V R P S J Y, Z U (2 PLACES) L ( PLACES) M N K (3 PLACES) Y, Z G F E B CM6YN-12F D A X T C Outline Drawing and Circuit Diagram RTC
MIDA-HB12FA-600N IGBT module datasheet
Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC
RGCL60TK60 Data Sheet
RGCL6TK6 6V 3A Field Stop Trench IGBT Outline V CES 6V TO-3PFM I C( C) 8A V CE(sat) (Typ.).4V@I C =3A P D 54W () (2) (3) Features ) Low Collector - Emitter Saturation Voltage 2) Soft Switching 3) Pb -
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
High Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
Features / Advantages: Applications: Package: SMPD
XP GB x 100 CES 8 C CE(sat) 1.8 SOPLUS Surface Mount Power Device Phase leg SCR / GB Part number 1 9 Backside: isolated E36641 3 6 7 4 8 Features / dvantages: pplications: Package: SMPD XP GB - low saturation
V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 400 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 4 A VS-GA4TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
TO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5016ANX Nch 500V 16A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 0.27Ω I D ±16A P D 50W loutline TO-220FM lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS )
Silicon FS Trench IGBT BT40T60 ANFU
Silicon FS Trench IGBT BT40T60 ANFU General Description: Using HUAJING's proprietary trench design and advanced Field Stop (FS) technology, offering superior conduction and switching performances. V CES