10-PZ126PA080ME-M909F18Y. Maximum Ratings

Transcription

1 flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance with integrated DC-capacitors Switching frequency >1kHz Temperature sensor flow 12mm housing Solar Inverter Charger Power Supply Target Applications Schematic Types Maximum Ratings Tj= C, unless otherwise specified Parameter Symbol Condition Value Unit T1, T2, T3, T4, T5, T6 Drain to source breakdown voltage V DS 12 V DC drain current I D T j =T j max T h =8 C 16 T c =8 C 2 A Pulsed drain current I Dpulse t p limited by T j max 6 A Power dissipation P tot T j =T j max T h =8 C 39 T c =8 C 59 W Gate-source peak voltage V GS -1/ V Maximum Junction Temperature T j max 15 C D1, D2, D3, D4, D5, D6 Peak Repetitive Reverse Voltage V RRM 12 V Forward average current I FAV T j =T j max T h =8 C 13 T c =8 C 16 A Non-Repetitive Peak Forward Surge Current I FSM t p =1ms T j = C 64 A Repetitive Peak Forward Surge Current I FRM t p limited by T j max 39 A Power dissipation per Diode P tot T j =T j max T h =8 C 34 T c =8 C 51 W Maximum Junction Temperature T j max 175 C copyright Vincotech 1 Revision: 2

2 Tj= C, unless otherwise specified Maximum Ratings Parameter Symbol Condition Value Unit C1, C2, C3 Max.DC voltage V MAX Tc= C 1 V Thermal Properties Storage temperature T stg C Operation temperature under switching condition T op -4 +(Tjmax - ) C Insulation Properties Insulation voltage t=2s DC voltage 4 V Creepage distance min 12,7 mm Clearance min 9,9 mm copyright Vincotech 2 Revision: 2

3 Characteristic Values Parameter Symbol Conditions Value Unit V GE [V] or V GS [V] V r [V] or V CE [V] or V DS [V] I C [A] or I F [A] or I D [A] T j Min Typ Max T1, T2, T3, T4, T5, T6 Tj= C,8 Static drain to source ON resistance R DS(on) 2 2 Ω Tj=1 C,14 Tj= C 1,7 2,2 Gate threshold voltage V (GS)th V DS = V GS 1,1 V Tj=1 C Tj= C Gate to Source Leakage Current I gss 2 na Tj=1 C Tj= C 1 Zero Gate Voltage Drain Current I dss 12 µa Tj=1 C Internal Gate Resistance R G f=1mhz; V AC =mv 4,6 Ω Total gate charge g 49,2 Gate to source charge gs / ,8 nc Gate to drain charge Input capacitance gd C iss Tj= C Output capacitance C oss f=1mhz 1 8 pf Reverse transfer capacitance C rss 6,5 Thermal resistance chip to heatsink per chip R thjh Phase-Change Material 1,79 K/W D1, D2, D3, D4, D5, D6 Tj= C 1,45 1,8 Forward voltage V F 7,5 V Tj=1 C 1,75 Tj= C Reverse leakage current I rm 12 µa Tj=1 C Thermal resistance chip to heatsink per chip R thjh Phase-Change Material 2,81 K/W Single ended configuration T1, T2, T3, T4, T5, T6 Turn On Delay Time Rise Time Turn off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse t d(on) t r t d(off) t f E on E off Rgoff=4 Ω Rgon=4 Ω Tj= C 11 Tj=1 C 11 Tj= C 5 Tj=1 C 4 Tj= C 37 Tj=1 C 39 Tj= C 13 Tj=1 C 14 Tj= C,112 Tj=1 C,13 Tj= C,58 Tj=1 C,58 ns mws D1, D2, D3, D4, D5, D6 Peak recovery current Reverse recovery time Reverse recovery charge Reverse recovered energy Peak rate of fall of recovery current I Tj= C 18 RRM A Tj=1 C 19 t Tj= C 1 rr ns Tj=1 C 1 Tj= C,94 rr Rgon= Ω µc Tj=1 C,98 E Tj= C,26 rec mws Tj=1 C,31 di(rec)max Tj= C 4563 A/µs /dt Tj=1 C 4485 copyright Vincotech 3 Revision: 2

4 Characteristic Values Parameter Symbol Conditions Value Unit V GE [V] or V GS [V] V r [V] or V CE [V] or V DS [V] I C [A] or I F [A] or I D [A] T j Min Typ Max D1, D2, D3, D4, D5, D6 Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current Reverse recovered energy Half bridge configuration I Tj= C 26 RRM Tj=1 C 34 t Tj= C 16 rr Tj=1 C 15 Tj= C,232 rr Rgon=4 Ω -5/ Tj=1 C,234 di(rec)max Tj= C 6761 /dt Tj=1 C 9363 Erec Tj= C,84 Tj=1 C,81 A ns µc A/µs mws T1, T2, T3, T4, T5, T6 Turn On Delay Time Rise Time Turn off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse t d(on) t r t d(off) t f E on E off Rgoff=4 Ω Rgon=4 Ω -5/ Tj= C 14 Tj=1 C 13 Tj= C 4 Tj=1 C 4 Tj= C 45 Tj=1 C 48 Tj= C 7 Tj=1 C 6 Tj= C,152 Tj=1 C,14 Tj= C,57 Tj=1 C,58 ns mws Splitted output configuration T1, T2, T3, T4, T5, T6 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy loss per pulse Turn-off energy loss per pulse t d(on) t r t d(off) t f E on E off Rgoff=4 Ω Rgon=4 Ω -8/ Tj= C 15 Tj=1 C 14 Tj= C 4 Tj=1 C 3 Tj= C 3 Tj=1 C 32 Tj= C 17 Tj=1 C 13 Tj= C,58 Tj=1 C,42 Tj= C,75 Tj=1 C,74 ns mws D1, D2, D3, D4, D5, D6 Peak reverse recovery current Reverse recovery time Reverse recovered charge Peak rate of fall of recovery current Reverse recovery energy C1, C2, C3 I Tj= C 15 RRM Tj=1 C 17 t rr Tj= C 34 Tj=1 C 49 Tj= C,2 rr Rgon=4 Ω -8/ Tj=1 C,3 di(rec)max Tj= C 2741 /dt Tj=1 C 3343 E Tj= C,4 rec Tj=1 C,5 A ns µc A/µs mws C value C 47 nf Thermistor Rated resistance R T= C 22 Ω Deviation of R R/R R1=1486 Ω T= C -5 5 Power dissipation P T= C 2 mw Power dissipation constant T= C 2 mw/k B-value B(/5) Tol. ±3 T= C 395 K B-value B(/1) Tol. ±3 T= C 3996 K Vincotech NTC Reference B copyright Vincotech 4 Revision: 2

5 Half Bridge Configuration Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(i C ) E = f(r G ),3,6 E (mws), E on Low T E (mws),5 E on Low T E on High T E on High T,2,4,15,3,1,2 E off Low T E off Low T,5 E off High T,1 E off High T I C(A), R G (Ω) With an inductive load at With an inductive load at T j = /1 C T j = /1 C V CE = 7 V V CE = 7 V V GE = -5/16 V V GE = -5/16 V R gon = 4 Ω I C = 16 A R goff = 4 Ω Figure 3 D1, D2, D3, D4, D5, D6 FWD Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor E rec = f(i c ) E rec = f(r G ),2,1 E (mws) E rec High T E (mws),8 E rec Low T,15 E rec High T,6 E rec Low T,1,4,5,2, I C(A), R G (Ω) With an inductive load at With an inductive load at T j = /1 C T j = /1 C V CE = 7 V V CE = 7 V V GE = -5/16 V V GE = -5/16 V R gon = 4 Ω I C = 16 A copyright Vincotech 5 Revision: 2

6 Half Bridge Configuration Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(i C ) t = f(r G ) 1, 1, t (ms) t (ms) t doff,1,1 t doff t f t don t f,1 t don,1 t r t r, I C(A), R G (Ω) With an inductive load at With an inductive load at T j = 1 C T j = 1 C V CE = 7 V V CE = 7 V V GE = -5/16 V V GE = -5/16 V R gon = 4 Ω I C = 16 A R goff = 4 Ω Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor t rr = f(ic) t rr = f(r gon ) t rr (ms),2 t rr Low T t rr High T t rr (ms),7,6 t rr Low T,15,5 t rr High T,4,1,3,5,2,1, I C(A), R gon(ω) T j = /1 C T j = /1 C V CE = 7 V V R = 7 V V GE = -5/16 V I F = 16 A R gon = 4 Ω V GE = -5/16 V copyright Vincotech 6 Revision: 2

7 Half Bridge Configuration Figure 9 D1, D2, D3, D4, D5, D6 FWD Figure 1 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor rr = f(i C ) rr = f(r gon ),5,3 rr (µc),4 rr High T rr (µc), rr High T rr Low T,2,3 rr Low T,15,2,1,1,5, I C(A) R gon( Ω) T j = /1 C T j = /1 C V CE = 7 V V R = 7 V V GE = -5/16 V I F = 16 A R gon = 4 Ω V GE = -5/16 V Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor I RRM = f(i C ) I RRM = f(r gon ) 6 5 I rrm (A) I RRM High T I rrm (A) I RRM Low T I RRM High T I RRM Low T I C(A) R gon(ω) T j = /1 C T j = /1 C V CE = 7 V V R = 7 V V GE = -5/16 V I F = 16 A R gon = 4 Ω V GE = -5/16 V copyright Vincotech 7 Revision: 2

8 Half Bridge Configuration Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor di /dt,di rec /dt = f(ic) di /dt,di rec /dt = f(r gon ) 14 1 di rec / dt (A/ms) 12 di rec /dt T di /dt T di rec / dt (A/ms) 8 di rec /dt T di /dt T I C(A) R gon(ω) T j = /1 C T j = /1 C V CE = 7 V V R = 7 V V GE = -5/16 V I F = 16 A R gon = 4 Ω V GE = -5/16 V copyright Vincotech 8 Revision: 2

9 T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical output characteristics Typical output characteristics I C = f(v CE ) I C = f(v CE ) 7 7 I C (A) I C (A) V CE (V) V CE (V) 1 t p = µs t p = µs T j = C T j = 1 C V GE from V to 2 V in steps of 2 V V GE from V to 2 V in steps of 2 V Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical transfer characteristics I C = f(v GE ) Typical diode forward current as a function of forward voltage I F = f(v F ) I C (A) 2 16 I F (A) T j = C T j = T jmax - C T j = T jmax - C T j = C V GE (V) V F (V) t p = µs t p = µs V CE = 1 V copyright Vincotech 9 Revision: 2

10 Splitted Configuration Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(i C ) E = f(r G ),15,2 E (mws) E on Low T E (mws) E on Low T,12,15 E on High T,9 E on High T E off Low T,1 E off High T E off High T,6 E off Low T,5, I C(A) R G ( Ω ) With an inductive load at With an inductive load at T j = /126 C T j = /126 C V CE = 7 V V CE = 7 V V GE = 16/-8 V V GE = 16/-8 V R gon = 4 Ω I C = 16 A R goff = 4 Ω Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector current as a function of gate resistor E rec = f(i c ) E rec = f(r G ),8,6 E (mws) E rec High T E (mws),5 E rec High T,6,4 E rec Low T E rec Low T,4,3,2,2, I C (A) R G ( Ω ) With an inductive load at With an inductive load at T j = /126 C T j = /126 C V CE = 7 V V CE = 7 V V GE = 16/-8 V V GE = 16/-8 V R gon = 4 Ω I C = 16 A copyright Vincotech 1 Revision: 2

11 Splitted Configuration Figure 9 T1, T2, T3, T4, T5, T6 MOSFET Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(i C ) t = f(r G ) 1 1 t ( µs) t ( µs),1,1 t doff t doff t don t don t f,1 t f,1 t r t r, I C(A), R G( Ω ) With an inductive load at With an inductive load at T j = 126 C T j = 126 C V CE = 7 V V CE = 7 V V GE = 16/-8 V V GE = 16/-8 V R gon = 4 Ω I C = 16 A R goff = 4 Ω Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor t rr = f(ic) t rr = f(r gon ),6,6 t rr (ms),5 t rr High T t rr (ms),5 t rr High T t rr Low T,4,4 t rr Low T,3,3,2,2,1,1, I C(A), R gon(ω) T j = /126 C T j = /126 C V CE = 7 V V R = 7 V V GE = 16/-8 V I F = 16 A R gon = 4 Ω V GE = 16/-8 V copyright Vincotech 11 Revision: 2

12 Splitted Configuration Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor rr = f(i C ) rr = f(r gon ) rr (µc),4,3 rr High T rr (µc),3, rr High T rr Low T,2,2,15 rr Low T,1,1,5, I C(A) T j = /126 C T j = /126 C V CE = 7 V V R = 7 V V GE = 16/-8 V I F = 16 A R gon = 4 Ω V GE = 16/-8 V R gon( Ω) Figure 15 D1, D2, D3, D4, D5, D6 FWD Figure 16 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor I RRM = f(i C ) I RRM = f(r gon ) 2 I rrm (A) I rrm (A) 2 15 I RRM High T 15 I RRM High T I RRM Low T 1 1 I RRM Low T I C(A) R gon(ω) 2 T j = /126 C T j = /126 C V CE = 7 V V R = 7 V V GE = 16/-8 V I F = 16 A R gon = 4 Ω V GE = 16/-8 V copyright Vincotech 12 Revision: 2

13 Splitted Configuration Figure 17 D1, D2, D3, D4, D5, D6 FWD Figure 18 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor di /dt,di rec /dt = f(ic) di /dt,di rec /dt = f(r gon ) 1 8 di rec / dt (A/ms) 8 di o /dt T di rec /dt T di rec / dt (A/ms) di /dt T di rec /dt T I C(A) R gon(ω) T j = /126 C T j = /126 C V CE = 7 V V R = 7 V V GE = 16/-8 V I F = 16 A R gon = 4 Ω V GE = 16/-8 V copyright Vincotech 13 Revision: 2

14 T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 Figure 19 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 D1, D2, D3, D4, D5, D6 FWD MOSFET transient thermal impedance FWD transient thermal impedance as a function of pulse width as a function of pulse width Z thjh = f(t p ) Z thjh = f(t p ) Z thjh (K/W) Z thjh (K/W) t p (s) D =,5,2,1,5,2,1,5. D = tp / T D = tp / T R thjh = 1,79 K/W R thjh = 2,81 K/W t p (s) D =,5,2,1,5,2,1,5. IGBT thermal model values FWD thermal model values R (C/W) Tau (s) R (C/W) Tau (s),12 1,7E+,8 2,3E+,33 2,5E-1,21 3,3E-1 1,1 7,6E-2 1,43 6,8E-2,19 5,1E-3,71 1,2E-2,14 6,5E-4,33 2,4E-3,5 5,2E-4 copyright Vincotech 14 Revision: 2

15 T1, T2, T3, T4, T5, T6 / D1, D2, D3, D4, D5, D6 Figure 21 T1, T2, T3, T4, T5, T6 MOSFET Figure 22 T1, T2, T3, T4, T5, T6 MOSFET Power dissipation as a Collector current as a function of heatsink temperature function of heatsink temperature P tot = f(t h ) I C = f(t h ) 1 P tot (W) I C (A) T h( o C) T h( o C) T j = 15 ºC T j = 15 ºC V GE = 15 V Figure 23 D1, D2, D3, D4, D5, D6 FWD Figure 24 D1, D2, D3, D4, D5, D6 FWD Power dissipation as a Forward current as a function of heatsink temperature function of heatsink temperature P tot = f(t h ) I F = f(t h ) 7 2 P tot (W) 6 I F (A) Th ( o C) Th ( o C) T j = 175 ºC T j = 175 ºC copyright Vincotech 15 Revision: 2

16 T1, T2, T3, T4, T5, T6 Figure T1, T2, T3, T4, T5, T6 MOSFET Figure 26 T1, T2, T3, T4, T5, T6 MOSFET Safe operating area as a function Gate voltage vs Gate charge of drain-source voltage I D = f(v DS ) V GS = f(g) 1 2 I D (A) 1mS 1uS 1uS U GS (V) mS 1mS DC V DS (V) g (nc) D = single pulse I DS = 2 A T h = 8 ºC V DS = 8 V V GS = V I GS = 1 ma T j = T jmax ºC T j = ºC copyright Vincotech 16 Revision: 2

17 Booster Configuration Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Typical switching energy losses Typical switching energy losses as a function of collector current as a function of gate resistor E = f(i D ) E = f(r G ),,5 E (mws),2 E on Low T E (mws),4 E on Low T E on High T,15 E on High T,3 E off High T E off High T E off Low T,1 E off Low T,2,5, I C(A) R G ( Ω ) With an inductive load at With an inductive load at T j = /1 C T j = /1 C V DS = 7 V V DS = 7 V V GS = 16 V V GS = 16 V R gon = 4 Ω I D = 16 A R goff = 4 Ω Figure 3 D1, D2, D3, D4, D5, D6 FWD Figure 4 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery energy loss Typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor E rec = f(i c ) E rec = f(r G ),5,4 E (mws),4 E (mws) E rec High T,3,3 E rec Low T E rec High T,2 E rec Low T,2,1, I C(A) R G ( Ω ) 4 With an inductive load at With an inductive load at T j = /1 C T j = /1 C V DS = 7 V V DS = 7 V V GS = 16 V V GS = 16 V R gon = 4 Ω I D = 16 A R goff = 4 Ω copyright Vincotech 17 Revision: 2

18 Booster Configuration Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Typical switching times as a Typical switching times as a function of collector current function of gate resistor t = f(i D ) t = f(r G ) 1 1 t ( ms) t ( ms),1,1 t doff t doff t don t f,1 t don,1 t r t f t r, I D (A), R G (Ω) With an inductive load at With an inductive load at T j = 1 C T j = 1 C V DS = 7 V V DS = 7 V V GS = 16 V V GS = 16 V R gon = 4 Ω I C = 16 A R goff = 4 Ω Figure 7 D1, D2, D3, D4, D5, D6 FWD Figure 8 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery time as a Typical reverse recovery time as a function of collector current function of MOSFET turn on gate resistor t rr = f(ic) t rr = f(r gon ),15,2 t rr ( ms),12 t rr ( ms) t rr High T,15 t rr High T,9 t rr Low T t rr Low T,1,6,3, I C (A), R Gon(Ω) T j = /1 C T j = /1 C V CE = 7 V V R = 7 V V GE = 16 V I F = 16 A R gon = 4 Ω V GS = 16 V copyright Vincotech 18 Revision: 2

19 Booster Configuration Figure 9 D1, D2, D3, D4, D5, D6 FWD Figure 1 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery charge as a Typical reverse recovery charge as a function of collector current function of MOSFET turn on gate resistor rr = f(i C ) rr = f(r gon ),15,12 rr (µc) rr ( µc),12 rr High T,1 rr Low T rr High T,9,8 rr Low T,6,6,3, I C (A) T j = /1 C Tj = /1 C V CE = 7 V VR = 7 V V GE = 16 V IF = 16 A R gon = 4 Ω VGS = 16 V, R Gon(Ω) 4 Figure 11 D1, D2, D3, D4, D5, D6 FWD Figure 12 D1, D2, D3, D4, D5, D6 FWD Typical reverse recovery current as a Typical reverse recovery current as a function of collector current function of MOSFET turn on gate resistor I RRM = f(i C ) I RRM = f(r gon ) I rrm (A) 3 I RRM High T I rrm (A) 2 2 I RRM Low T I RRM High T I RRM Low T I C (A) R Gon(Ω) T j = /1 C T j = /1 C V CE = 7 V V R = 7 V V GE = 16 V I F = 16 A R gon = 4 Ω V GS = 16 V copyright Vincotech 19 Revision: 2

20 Booster Configuration Figure 13 D1, D2, D3, D4, D5, D6 FWD Figure 14 D1, D2, D3, D4, D5, D6 FWD Typical rate of fall of forward Typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of MOSFET turn on gate resistor di /dt,di rec /dt = f(ic) di /dt,di rec /dt = f(r gon ) di rec / dt (A/ µs) 1 8 di /dt di rec /dt di rec / dt (A/ µs) 8 6 di /dt di rec /dt I C (A) R Gon(Ω) T j = /1 C Tj = /1 C V CE = 7 V VR = 7 V V GE = 16 V IF = 16 A R gon = 4 Ω VGS = 16 V copyright Vincotech 2 Revision: 2

21 Thermistor Figure 1 Typical NTC characteristic as a function of temperature RT = f(t) Thermistor 24 NTC-typical temperature characteristic R/Ω T ( C) 1 copyright Vincotech 21 Revision: 2

22 Switching Definitions Half Bridge Configuration General conditions T j = 1 C R gon R goff = = 4 Ω 4 Ω Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon (t Eoff = integrating time for E off ) (t Eon = integrating time for E on ) 1 3 t doff 1 V CE I C 75 V GE 9 I C V CE V GE t Eoff 15 1 V CE V GE I C 1 5 t don V GE 1 I C 1 t Eon V CE ,2,4,6,8,1 time (us) ,1 3,2 3,3 3,4 V GE () = V V GE () = V V GE (1) = 16 V V GE (1) = 16 V V C (1) = 7 V V C (1) = 7 V I C (1) = 16 A I C (1) = 16 A t doff =,48 µs t don =,13 µs t Eoff =,58 µs t Eon =,24 µs Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t f 1 fitted 1 I C V CE Turn-on Switching Waveforms & definition of t r 35 I C 3 75 I C 9 5 I C 6 2 t f I C 4 I C V CE t r I C 9 - I C 1-5,4,5,6,7,8 time (us) ,1 3,2 3,3 V C (1) = 7 V V C (1) = 7 V I C (1) = 16 A I C (1) = 16 A t f =,6 µs t r =,4 µs copyright Vincotech 22 Revision: 2

23 Switching Definitions Half Bridge Configuration Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t Eoff Turn-on Switching Waveforms & definition of t Eon E off 15 P on 75 1 I C 1 1 E on 5 75 V GE 9 5 t Eoff P off - V GE 1 t Eon V CE 3-5,2,4,6,8,1 time (us) - 3 3,1 3,2 3,3 3,4 P off (1) = 11,17 kw P on (1) = 11,17 kw E off (1) =,6 mj E on (1) =,14 mj t Eoff =,58 µs t Eon =,24 µs Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of t rr 15 1 I d 5 t rr V d fitted I RRM I RRM 1 I RRM 9-3 3,1 3,2 3,3 3,4 3,5 V d (1) = 7 V I d (1) = 16 A I RRM (1) = -34 A t rr =,15 µs copyright Vincotech 23 Revision: 2

24 Switching Definitions Half Bridge Configuration Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of t rr Turn-on Switching Waveforms & definition of t Erec (t rr = integrating time for rr ) (t Erec = integrating time for E rec ) 15 I rr d 1 2 E rec 5 t rr t Erec -1 P rec ,1 3,2 3,3 3,4 3,5 3,6-15 3,1 3,2 3,3 3,4 3,5 I d (1) = 16 A P rec (1) = 11,17 kw rr (1) =,23 µc E rec (1) =,8 mj t rr =,31 µs t Erec =,31 µs Measurement circuit Figure 1 Half Bridge Configuration switching measurement circuit Vcc V VDC 7 Vce V -8V D1 T2 L 75uH Vge V T1 D2 Ic A V 4Ohm 4Ohm -5V copyright Vincotech 24 Revision: 2

25 Switching Definitions Splitted Configuration General conditions T j = 1 C R gon R goff = = 4 Ω 4 Ω Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon (t Eoff = integrating time for E off ) (t Eon = integrating time for E on ) 15 1 V GE 9 t doff V CE 9 V CE 2 15 V GE 5 t Eoff I C 1 V CE I C 1 5 t don -5 V GE 1 I C 1 V GE t Eon I C V CE ,8 -,6 -,4 -,2,2,4 time (us) -1 2,98 2,99 3 3,1 3,2 V GE () = V V GE () = V V GE (1) = 16 V V GE (1) = 16 V V C (1) = 7 V V C (1) = 7 V I C (1) = 16 A I C (1) = 16 A t doff =,32 µs t don =,14 µs t Eoff =,84 µs t Eon =,17 µs Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t f 1 fitted V CE I C 1 I C 9 Turn-on Switching Waveforms & definition of t r 2 I C I C 6 1 V CE I C 9 I C 4 5 t r - I C1 t f I C 1-5 -,4 -,3 -,2 -,1,1 time (us) -5 2, ,5 3,1 3,15 3,2 V C (1) = 7 V V C (1) = 7 V I C (1) = 16 A I C (1) = 16 A t f =,13 µs t r =,3 µs copyright Vincotech Revision: 2

26 Switching Definitions Splitted Configuration Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t Eoff 1 Turn-on Switching Waveforms & definition of t Eon 1 E off I C E on P on 5 P off 5 V GE 9 t Eoff V GE 1 VCE 3 - t Eon -5 -,6 -,4 -,2,2,4 time (us) - 2,99 2, ,5 3,1 3,15 P off (1) = 11,19 kw P on (1) = 11,19 kw E off (1) =,74 mj E on (1) =,41 mj t Eoff =,84 µs t Eon =,17 µs Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of t rr 15 1 I d 5 t rr V d fitted I RRM I RRM 9 I RRM ,2 3,4 3,6 3,8 3,1 V d (1) = 7 V I d (1) = 16 A I RRM (1) = -17 A t rr =,49 µs copyright Vincotech 26 Revision: 2

27 Switching Definitions Splitted Configuration Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of t rr Turn-on Switching Waveforms & definition of t Erec (t rr = integrating time for rr ) (t Erec = integrating time for E rec ) I d rr 15 E rec 5 t rr 1 t Erec 5 P rec ,3 3,6 3,9 3,12 3, ,3 3,6 3,9 3,12 3,15 I d (1) = 16 A P rec (1) = 11,19 kw rr (1) =,27 µc E rec (1) =,5 mj t rr =,1 µs t Erec =,1 µs Measurement circuit Figure 1 Splitted Configuration switching measurement circuit Vd V Vcc V Vd used for T2 dody diode Erec calculation VDC 7 Vce V -8V D1 T2 1uH L 75uH Vge V T1 D2 Ic A V 4Ohm 4Ohm -8V copyright Vincotech 27 Revision: 2

28 Switching Definitions Booster Configuration General conditions T j = 1 C R gon R goff = = 4 Ω 4 Ω Figure 1 T1, T2, T3, T4, T5, T6 MOSFET Figure 2 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t doff, t Eoff Turn-on Switching Waveforms & definition of t don, t Eon (t Eoff = integrating time for E off ) (t Eon = integrating time for E on ) 1 1 t doff I C 2 I C V GE V GE 9 V CE V GE 5 1 V CE t Eoff I C 1 5 t don V CE V GE 1 I C 1 t Eon V CE ,6 -,4 -,2,2 time (us) -1 2,99 3 3,1 3,2 3,3 3,4 V GE () = V V GE () = V V GE (1) = 16 V V GE (1) = 16 V V C (1) = 7 V V C (1) = 7 V I C (1) = 16 A I C (1) = 16 A t doff =,39 µs t don =,11 µs t Eoff =,44 µs t Eon =,26 µs Figure 3 T1, T2, T3, T4, T5, T6 MOSFET Figure 4 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t f 1 fitted Turn-on Switching Waveforms & definition of t r I C 1 I C V CE 2 I C I C 6 1 V CE I C 9 I C 4 t r 5 I C1 I t C 1 f - -,2 -,1,1,2,3 time (us) V C (1) = 7 V V C (1) = 7 V I C (1) = 16 A I C (1) = 16 A t f =,14 µs t r =,4 µs ,5 3,1 3,15 3,2 copyright Vincotech 28 Revision: 2

29 Switching Definitions Booster Configuration Figure 5 T1, T2, T3, T4, T5, T6 MOSFET Figure 6 T1, T2, T3, T4, T5, T6 MOSFET Turn-off Switching Waveforms & definition of t Eoff 1 1 E off Turn-on Switching Waveforms & definition of t Eon 15 P on E on I C V GE 9 P off - t Eoff V GE 1 V CE 3 t Eon -5 -,4 -,2,2 time (us) - 2,99 3 3,1 3,2 3,3 3,4 P off (1) = 11,15 kw P on (1) = 11,15 kw E off (1) =,6 mj E on (1) =,1 mj t Eoff =,44 µs t Eon =,26 µs Figure 7 D1, D2, D3, D4, D5, D6 FWD Turn-off Switching Waveforms & definition of t rr 15 1 I d 5 t rr V d -5 fitted I RRM 1-1 I RRM 9 I RRM ,1 3,2 3,3 3,4 V d (1) = 7 V I d (1) = 16 A I RRM (1) = -19 A t rr =,1 µs copyright Vincotech 29 Revision: 2

30 Switching Definitions Booster Configuration Figure 8 D1, D2, D3, D4, D5, D6 FWD Figure 9 D1, D2, D3, D4, D5, D6 FWD Turn-on Switching Waveforms & definition of t rr Turn-on Switching Waveforms & definition of t Erec (t rr = integrating time for rr ) (t Erec = integrating time for E rec ) rr t rr 5 75 t Erec I d E rec P rec ,2 3,4 3,6 3, ,2 3,4 3,6 3,8 I d (1) = 16 A P rec (1) = 11,15 kw rr (1) =,1 µc E rec (1) =,3 mj t rr =,5 µs t Erec =,5 µs Measurement circuit Figure 1 Booster Configuration switching measurement circuit Vcc V VDC 7 Vce V D1-8V T2 L 75uH Vge V T1 D2 Ic A V 4Ohm 4Ohm V copyright Vincotech 3 Revision: 2

31 Ordering Code and Marking - Outline - Pinout Ordering Code & Marking Version w/o thermal paste 12mm housing Press-fit pin Ordering Code in DataMatrix as M99F18Y in packaging barcode as M99F18Y Outline Pin table Pin X Y 1 33,4 2,4 3,5 2,8 4,5 5,6 5 22, 5,6 6 22, 2,8 7 22, 8 14, ,8 12 5, ,2 14 7,15 22,2 15 7,75 19,2 16 7,75 16,4 17 8,35 1, ,15 11, ,75 16,4 2 13,75 19, ,15 22, ,65 22,2 23,65 22, ,4 22,2 31,55 19, ,55 16,4 Pinout copyright Vincotech 31 Revision: 2

32 DISCLAIMER The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. LIFE SUPPORT POLICY Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. copyright Vincotech 32 Revision: 2