TrenchStop Series. Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Transcription

1 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Approx. 1.0V reduced V CE(sat) and 0.5V reduced V F compared to BUP314D Short circuit withstand time 10µs G Designed for : Frequency Converters Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery antiparallel EmCon HE diode Complete product spectrum and PSpice Models : Type V CE I C V CE(sat),Tj=25 C T j,max Package Ordering Code 1200V 25A 1.7V 150 C TO247AC Q67040S4518 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 1200 V DC collector current I C T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 75 Turn off safe operating area V CE 1200V, T j 150 C 75 Diode forward current I F T C = 25 C T C = 100 C Diode pulsed current, t p limited by T jmax I Fpuls 75 Gateemitter voltage V GE ±20 V Short circuit withstand time 1) V GE = 15V, V CC 1200V, T j 150 C Power dissipation T C = 25 C t SC 10 µs P tot 190 W Operating junction temperature T j Storage temperature T stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 C E PTO24731 (TO247AC) A C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Preliminary / Rev. 1 Jul02

2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient R thjc 0.65 R thjcd 1.0 R thja TO247AC 40 K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =500µA Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C =25A T j =25 C T j =125 C T j =150 C Diode forward voltage V F V GE =0V, I F =25A T j =25 C T j =125 C T j =150 C Gateemitter threshold voltage V GE(th) I C =1mA, V CE =V GE Zero gate voltage collector current I CES V CE =1200V, V GE =0V T j =25 C T j =150 C Gateemitter leakage current I GES V CE =0V,V GE =20V 600 na Transconductance g fs V CE =20V, I C =25A 16 S Integrated gate resistor R Gint 8 Ω Unit V ma Power Semiconductors 2 Preliminary / Rev. 1 Jul02

3 Dynamic Characteristic Input capacitance C iss V CE =25V, 1860 Output capacitance C oss V GE =0V, 96 Reverse transfer capacitance f=1mhz 82 C rss Gate charge Q Gate V CC =960V, I C =25A V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) I C(SC) V GE =15V,t SC 10µs V CC = 600V, T j = 25 C pf 155 nc L E TO247AC 13 nh 150 A Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =25 C, 50 Rise time t V CC =600V,I C =25A r 30 V GE =15/15V, Turnoff delay time t d(off) R 560 G =22Ω, Fall time t f L 2) σ =180nH, 70 Turnon energy E on C 2) σ =39pF 2.0 Energy losses include Turnoff energy E off tail and diode 2.2 Total switching energy reverse recovery. 4.2 E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =25 C, 200 ns Diode reverse recovery charge Q rr V R =600V, I F =25A, 2.3 µc Diode peak reverse recovery current I rrm di F /dt=80/µs 21 A Diode peak rate of fall of reverse recovery current during t b di rr /dt 390 A/µs Unit ns mj 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Preliminary / Rev. 1 Jul02

4 Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =150 C 50 Rise time t V CC =600V,I C =25A, r 32 V GE =15/15V, Turnoff delay time t d(off) R 660 G = 22Ω, Fall time t f L 1) σ =180nH, 130 Turnon energy E C 1) σ =39pF on 3.0 Energy losses include Turnoff energy E off tail and diode 4.0 Total switching energy reverse recovery. 7.0 E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =150 C 320 ns Diode reverse recovery charge Q rr V R =600V, I F =25A, 5.2 µc Diode peak reverse recovery current I rrm di F /dt=80/µs 29 A Diode peak rate of fall of reverse recovery current during t b di rr /dt 320 A/µs Unit ns mj 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Preliminary / Rev. 1 Jul02

5 t p =3µs 7 IC, COLLECTOR CURRENT T C =80 C T C =110 C I c IC, COLLECTOR CURRENT 1 1A 10µs 50µs 150µs 500µs 1 10Hz 100Hz 1kHz 10kHz 100kHz Figure 1. I c 20ms DC 0,1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 600V, V GE = 0/+15V, R G = 22Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C;V GE =15V) Ptot, POWER DISSIPATION 150W 100W 50W IC, COLLECTOR CURRENT W 25 C 50 C 75 C 100 C 125 C 25 C 75 C 125 C Figure 3. T C, CASE TEMPERATURE Power dissipation as a function of case temperature (T j 150 C) Figure 4. T C, CASE TEMPERATURE Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 5 Preliminary / Rev. 1 Jul02

6 7 7 6 V GE =17V 6 V GE =17V IC, COLLECTOR CURRENT V 13V 11V 9V 7V IC, COLLECTOR CURRENT V 13V 11V 9V 7V 1 1 0V 1V 2V 3V 4V 5V 6V Figure 5. V CE, COLLECTOREMITTER VOLTAGE Typical output characteristic (T j = 25 C) 0V 1V 2V 3V 4V 5V 6V Figure 6. V CE, COLLECTOREMITTER VOLTAGE Typical output characteristic (T j = 150 C) IC, COLLECTOR CURRENT =150 C 25 C 0V 2V 4V 6V 8V 10V 12V V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V) VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V I C =5 I C =25A I C =15A I C =8A 0,0V 50 C 0 C 50 C 100 C, JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 6 Preliminary / Rev. 1 Jul02

7 t d(off) t d(off) t, SWITCHING TIMES 100ns 10ns t f t d(on) t, SWITCHING TIMES 100 ns 10 ns t f t d(on) t r t r 1ns Figure 9. I C, COLLECTOR CURRENT Typical switching times as a function of collector current (inductive load, =150 C, V CE =600V, V GE =0/15V, R G =22Ω, 1 ns 5Ω 15Ω 25Ω 35Ω 45Ω R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, =150 C, V CE =600V, V GE =0/15V, I C =25A, t, SWITCHING TIMES 100ns t d(off) t f t d(on) t r VGE(th), GATEEMITT TRSHOLD VOLTAGE 7V 6V 5V 4V 3V 2V 1V max. typ. min. 10ns 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =25A, R G =22Ω, 0V 50 C 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 1.0mA) Power Semiconductors 7 Preliminary / Rev. 1 Jul02

8 E, SWITCHING ENERGY LOSSES 14,0mJ 12,0mJ 10,0mJ 8,0mJ 6,0mJ 4,0mJ 2,0mJ ) E on and E ts include losses due to diode recovery E ts E off E on 0,0mJ I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, =150 C, V CE =600V, V GE =0/15V, R G =22Ω, E, SWITCHING ENERGY LOSSES 8 mj 6 mj 4 mj 2 mj ) E on and E ts include losses due to diode recovery 0 mj 5Ω 15Ω 25Ω 35Ω R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, =150 C, V CE =600V, V GE =0/15V, I C =25A, E ts E off E on 7mJ ) E on and E ts include losses due to diode recovery 10mJ ) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES 6mJ 5mJ 4mJ 3mJ 2mJ 1mJ E ts E off E on E, SWITCHING ENERGY LOSSES 9mJ 8mJ 7mJ 6mJ 5mJ 4mJ 3mJ 2mJ 1mJ E ts E off E on 0mJ 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =25A, R G =22Ω, 0mJ 400V 500V 600V 700V 800V V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, =150 C, V GE =0/15V, I C =25A, R G =22Ω, Power Semiconductors 8 Preliminary / Rev. 1 Jul02

9 C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 240V 960V c, CAPACITANCE 1nF 100pF C oss C rss 0V 0nC 50nC 100nC 150nC 200nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =25 A) 10pF 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) tsc, SHORT CIRCUIT WITHSTAND TIME 15µs 10µs 5µs IC(sc), short circuit COLLECTOR CURRENT µs 12V 14V 16V V GE, GATEEMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gateemitter voltage (V CE =600V, start at =25 C) 12V 14V 16V 18V V GE, GATEEMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (V CE 600V, T j 150 C) Power Semiconductors 9 Preliminary / Rev. 1 Jul02

10 VCE, COLLECTOREMITTER VOLTAGE 600V 400V 200V V CE IC, COLLECTOR CURRENT I C 600V 400V 200V I C 0V 0us 0.5us 1us 1.5us V CE 0us 0.5us t, TIME t, TIME Figure 21. Typical turn on behavior (V GE =0/15V, R G =22Ω, T j = 150 C, 1us 1.5us Figure 22. Typical turn off behavior (V GE =15/0V, R G =22Ω, T j = 150 C, 0V ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W D= R,(K/W) τ, (s)= single pulse R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R K/W 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = t p / T) ZthJC, TRANSIENT THERMAL RESISTANCE 10 0 K/W 10 1 K/W D= R,(K/W) τ, (s)= R 1 R 2 single pulse C 1=τ 1/R 1 C 2=τ 2/R K/W 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=t P /T) Power Semiconductors 10 Preliminary / Rev. 1 Jul02

11 trr, REVERSE RECOVERY TIME 500ns 400ns 300ns 200ns 100ns =150 C =25 C Qrr, REVERSE RECOVERY CHARGE 5µC 4µC 3µC 2µC 1µC =150 C =25 C 0ns 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (V R =600V, I F =25A, 0µC 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (V R =600V, I F =25A, Irr, REVERSE RECOVERY CURRENT 3 25A 2 15A 1 5A =150 C =25 C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 40/µs 30/µs 20/µs 10/µs =25 C =150 C 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (V R =600V, I F =25A, /µs 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R =600V, I F =25A, Power Semiconductors 11 Preliminary / Rev. 1 Jul02

12 =25 C IF, FORWARD CURRENT C 4 2 VF, FORWARD VOLTAGE 2,0V 1,5V 1,0V I F =5 25A 15A 8A 0,5V 0V 1V 2V V F, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage 0,0V 50 C 0 C 50 C 100 C, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Power Semiconductors 12 Preliminary / Rev. 1 Jul02

13 TO247AC dimensions symbol [mm] [inch] min max min max A B C D E F G 0.76 max max H K L M N P Q Power Semiconductors 13 Preliminary / Rev. 1 Jul02

14 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ =180nH and Stray capacity C σ =39pF. Power Semiconductors 14 Preliminary / Rev. 1 Jul02

15 Published by Infineon Technologies AG, Bereich Kommunikation St.MartinStrasse 53, D81541 München Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 Preliminary / Rev. 1 Jul02