MOSFET. CoolMOS CP. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
|
|
- Claribel Arnold
- 5 years ago
- Views:
Transcription
1 MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor Data Sheet Rev. 2.1, Final Industrial & Multimarket
2 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. ThinPAK ThinPAK is a a new leadless SMD package for HV MOSFETs. The new package has a very small footprint of only 64mm² (vs. 150mm² for the D 2 PAK) and a very low profile with only 1mm height (vs. 4.4mm for the D 2 PAK). The significantly smaller package size, combined with benchmark low parasitic inductances, provides designers with a new and effective way to decrease system solution size in power-density driven designs. bottom view Features Reduced board space consumption Increased power density Short commutation loop Smooth switching waveform easy to use products Extremely low losses due to very low FOM Rdson*Qg and Eoss Quallfied according to JEDEC 1) for target applications (Server, Adapter) Pb-free plating, Halogen free Applications: Server, Adapter Table 1 Key Performance Parameters Parameter Value Unit Related Links V T j,max 650 V IFX CP Product Brief R DS(on),max Ω IFX CP Portfolio Q g,typ 22 nc IFX ThinPAK Webpage I D,pulse 34 A IFX Design tools E 400V 4.2 µj Body diode di/dt 200 A/µs Type Package Marking PG-VSON-4 6R299P 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1,
3 Table of Contents Table of Contents 1 Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test circuits Package outlines Revision History Final Data Sheet 3 Rev. 2.1,
4 Maximum ratings 2 Maximum ratings at T j = 25 C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Continuous drain current 1) I D A T C = 25 C 7 T C = 100 C Pulsed drain current 2) I D,pulse A T C =25 C Avalanche energy, single pulse E AS mj I D =4.4 A,V DD =50 V (see table 17) Avalanche energy, repetitive 2)3) E AR I D =4.4 A,V DD =50 V Avalanche current, repetitive 2)3) I AR A MOSFET dv/dt ruggedness dv/dt V/ns V DS = V Gate source voltage V GS V static AC (f>1 Hz) Power dissipation P tot W T C =25 C Operating temperature T j C Storage temperature T stg C Continuous diode forward current I S A T C =25 C Diode pulse current 2) I S,pulse A T C =25 C Reverse diode dv/dt 4) dv/dt V/ns V DS = V, I SD I D, T j =25 C Maximum diode commutation speed 4) di f /dt A/µs (see table 18) 1) Limited by T j,max. Maximum duty cycle 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f. 4) Identical low side and high side switch with identical R G 3 Thermal characteristics Table 3 Thermal characteristics Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Thermal resistance, junction - case R thjc C/W Thermal resistance, junction - ambient R thja SMD version, device on PCB, 6cm 2 cooling area 1) Reflow soldering temperature T sold C reflow MSL 3 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 4 Rev. 2.1,
5 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V (BR)DSS V V GS =0 V, I D =0.25 ma Gate threshold voltage V GS(th) V DS =V GS, I D =0.44 ma Zero gate voltage drain current I DSS µa V DS =600 V, V GS =0 V, T j =25 C V DS =600 V, V GS =0 V, T j =150 C Gate-source leakage current I GSS na V GS =20 V, V DS =0 V Drain-source on-state resistance R DS(on) Ω V GS =10 V, I D =6.6 A, T j =25 C V GS =10 V, I D =6.6 A, T j =150 C Gate resistance R G Ω f=1 MHz, open drain Table 5 Dynamic characteristics Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Input capacitance C iss pf V GS =0 V, V DS =100 V, Output capacitance C oss f=1 MHz Effective output capacitance, energy related 1) Effective output capacitance, time related 2) C o(er) V GS =0 V, V DS = V C o(tr) I D =constant, V GS =0 V V DS = V Turn-on delay time t d(on) ns V DD =400 V, Rise time t V GS =13 V, I D =6.6 A, r R G =4.3 Ω Turn-off delay time t d(off) (see table 16) Fall time t f - 5-1) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V (BR)DSS 2) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V (BR)DSS Final Data Sheet 5 Rev. 2.1,
6 Electrical characteristics Table 6 Gate charge characteristics Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Gate to source charge Q gs nc V DD =480 V, I D =6.6 A, Gate to drain charge Q gd V GS =0 to 10 V Gate charge total Q g Gate plateau voltage V plateau V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Diode forward voltage V SD V V GS =0 V, I F =6.6 A, T j =25 C Reverse recovery time t rr ns V R =400 V, I F =6.6 A, Reverse recovery charge Q di F /dt=100 A/µs rr µc (see table 18) Peak reverse recovery current I rrm A Final Data Sheet 6 Rev. 2.1,
7 5 Electrical characteristics diagrams Electrical characteristics diagrams Table 8 Power dissipation Max. transient thermal impedance P tot = f(t C ) Z (thjc) =f(tp); parameter: D=t p /T Table 9 Safe operating area T C =25 C Safe operating area T C =80 C I D =f(v DS ); T C =25 C; D=0; parameter t p I D =f(v DS ); T C =80 C; D=0; parameter t p Final Data Sheet 7 Rev. 2.1,
8 Electrical characteristics diagrams Table 10 Typ. output characteristics T j =25 C Typ. output characteristics T j =125 C I D =f(v DS ); T j =25 C; parameter: V GS I D =f(v DS ); T j =125 C; parameter: V GS Table 11 Typ. drain-source on-state resistance Drain-source on-state resistance R DS(on) =f(i D ); T j =125 C; parameter: V GS R DS(on) =f(t j ); I D =6.6 A; V GS =10 V Final Data Sheet 8 Rev. 2.1,
9 Electrical characteristics diagrams Table 12 Typ. transfer characteristics Typ. gate charge I D =f(v GS ); V DS =20V V GS =f(q gate ), I D =6.6 A pulsed Table 13 Avalanche energy Drain-source breakdown voltage E AS =f(t j ); I D =4.4 A; V DD =50 V V BR(DSS) =f(t j ); I D =0.25 ma Final Data Sheet 9 Rev. 2.1,
10 Electrical characteristics diagrams Table 14 Typ. capacitances Typ. C oss stored energy C=f(V DS ); V GS =0 V; f=1 MHz E OSS =f(v DS ) Table 15 Forward characteristics of reverse diode I F =f(v SD ); parameter: T j Final Data Sheet 10 Rev. 2.1,
11 Test circuits 6 Test circuits Table 16 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform V DS 90% V DS V GS V GS 10% t d(on) t r t d( off) t f t on t off Table 17 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V D V DS V DS I D Table 18 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform R G1 I D v i di /dt F trr = t S + t F Qrr = Q S + Q F V DS Ι F ts t rr t F R G2 Ι RRM Q S Q F d rr i /dt 10% Ι RRM V RRM t 90% Ι RRM R G1 = R G2 v SIL00088 Final Data Sheet 11 Rev. 2.1,
12 Package outlines 7 Package outlines Figure 1 Outlines ThinPAK 8x8, dimensions in mm/inches Final Data Sheet 12 Rev. 2.1,
13 Revision History 8 Revision History Revision History: , Rev. 2.1 Previous Revision: Page Subjects (major changes since last revision) 2.0 Release of final data sheet 2.1 Update package drawing and schematic We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition Published by Infineon Technologies AG Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.1,
MOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.0, 2009-09-25 Final Industrial & Multimarket IPA60R125C6, IPB60R125C6 IPP60R125C6
More informationMOSFET. CoolMOS E6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor Data Sheet Rev. 2.0, 2011-05-13 Final Industrial & Multimarket IPA65R190E6, IPB65R190E6 IPI65R190E6,
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket IPA60R099C6, IPB60R099C6 IPP60R099C6
More informationMetal Oxide Semiconductor Field Effect Transistor. 600V CoolMOS E6 Power Transistor IPx60R600E6. Rev. 2.0, Final
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor Data Sheet Rev. 2.0, 2010-04-12 Final Industrial & Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket IPD60R950C6, IPB60R950C6 IPP60R950C6,
More informationMOSFET. CoolMOS C6. Data Sheet. Industrial & Multimarket. Metal Oxide Semiconductor Field Effect Transistor
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor Data Sheet Rev. 2.1, 2011-02-17 Final Industrial & Multimarket IPD65R380C6, IPI65R380C6 IPB65R380C6,
More informationMetall Oxide Semiconductor Field Effect Transistor. 650V CoolMOS TM E6 Power Transistor IPx65R600E6. Rev. 2.2,
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS TM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.2, 2016-08-04 Power Management & Multimarket 1 Description CoolMOS
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.5, 2011-09-16 Final Industrial & Multimarket 1 Description OptiMOS 150V products are class leading power MOSFETs for highest power density and energy efficient
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket 1 Description OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.1, 2011-09-08 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient
More informationn-channel Power MOSFET
n-channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy
More informationOptiMOS 2 Power-Transistor
IPI9N3LA, IPP9N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS E6600V 600VCoolMOS E6PowerTransistor IPx60R600E6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS E6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket IPD60R600E6, IPP60R600E6 IPA60R600E6 1 Description CoolMOS"
More informationMetall Oxide Semiconductor Field Effect Transistor. 650V CoolMOS TM E6 Power Transistor IPx65R600E6. Rev. 2.3,
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS TM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 1 Description CoolMOS
More informationMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R950C6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.2 Final PowerManagement&Multimarket IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1
More informationMOSFET MetalOxideSemiconductorFieldEffectTransistor. CoolMOS C6600V 600VCoolMOS C6PowerTransistor IPx60R190C6. DataSheet. PowerManagement&Multimarket
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C6600V 600VCoolMOS C6PowerTransistor DataSheet Rev.2.3 Final PowerManagement&Multimarket 1 Description IPA60R190C6, IPB60R190C6 IPI60R190C6,
More informationAUTOMOTIVE GRADE. A I DM Pulsed Drain Current -44 P A = 25 C Maximum Power Dissipation 3.8 P C = 25 C Maximum Power Dissipation 110
Features Advanced Planar Technology Low On-Resistance P-Channel MOSFET Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More informationBase Part Number Package Type Standard Pack Orderable Part Number
V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
More information700V Super-Junction Power MOSFET
700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs, designed according to the SJ principle.
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.9 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free,
More informationGP1M018A020CG GP1M018A020PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A
More informationGP2M005A050CG GP2M005A050PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK
More informationTO-3PF. Reel size (mm) - lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code
R6015ANZ Nch 600V 15A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 0.3Ω I D ±15A P D 110W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be
More informationSUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017 SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STD10LN80K5 10LN80K5 DPAK Tape and reel
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
More informationTO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5016ANX Nch 500V 16A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 0.27Ω I D ±16A P D 50W loutline TO-220FM lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS )
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationMMD50R380P 500V 0.38Ω N-channel MOSFET
MMD50R380P 500V 0.38Ω N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationSTF12N120K5, STFW12N120K5
STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP
More informationAUIRF1324S-7P AUTOMOTIVE GRADE
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationTO-220FM. Not Recommended for. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500
R5005CNX Nch 500V 5A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 1.6Ω I D ±5A P D 40W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be ±30V.
More informationMMIS70H900Q 700V 1.4Ω N-channel MOSFET
MMIS70H900Q 700V 1.4Ω N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationMMQ60R190P 600V 0.19Ω N-channel MOSFET
MMQ60R190P 600V 0.19Ω N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationIGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
More informationFeatures. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFI10LN80K5 10LN80K5 I²PAKFP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code V DS R DS(on) max. I D STFI10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
More informationFeatures. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic
More information600V Super-Junction Power MOSFET
600V Super-Junction Power MOSFET FEATURES l Very low FOM R DS(on) Q g l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More information600V Super-Junction Power MOSFET
600V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction
More informationIRFF230 JANTX2N6798 JANTXV2N6798
PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I
More informationFeatures. Table 1: Device summary Order code Marking Package Packing STL10LN80K5 10LN80K5 PowerFLAT 5x6 VHV Tape and reel
N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT
More informationMMD65R900Q 650V 0.90Ω N-channel MOSFET
MMD65R900Q 650V 0.90Ω N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationSuper Junction MOSFET
APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10LN80K5 10LN80K5 TO-220FP Tube
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF10LN80K5 800 V 0.63 Ω 8 A TO-220FP Figure 1: Internal
More informationIR MOSFET StrongIRFET IRF60R217
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationFeatures. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF7LN80K5 7LN80K5 TO-220FP Tube
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF7LN80K5 800 V 1.15 Ω 5 A 3 1 2 TO-220FP Figure 1:
More informationGP2M020A050H GP2M020A050F
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
More informationAUTOMOTIVE GRADE. Tube 50 AUIRFS3004-7P Tape and Reel Left 800 AUIRFS3004-7PTRL
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation
More informationAUTOMOTIVE GRADE. Tube 50 AUIRFS4115-7P Tape and Reel Left 800 AUIRFS4115-7TRL
Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive
More information700V Super-Junction Power MOSFET
700V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction
More informationFeatures. Applications. Table 1: Device summary Order code Marking Package Packing STWA70N60DM2 70N60DM2 TO-247 long leads Tube
N- Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STWA70N60DM2 600 V 66 A 446 W 3 2 1 TO-247 long leads Figure 1: Internal schematic
More informationCPT3. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 16 Switching Power Supply Basic ordering unit (pcs) 2500
R6002END Nch 600V 2A Power MOSFET Datasheet V DSS 600V R DS(on) (Max.) 3.4Ω I D P D ±1.7A 20W loutline CPT3 lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed
More informationIR MOSFET StrongIRFET IRL40SC228
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW12N150K5 12N150K5 TO-247 Tube
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W 1 3 2 Industry
More informationAUTOMOTIVE GRADE. Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationOrderable Part Number Form Quantity IRFHM8334PbF PQFN 3.3 mm x 3.3 mm Tape and Reel 4000 IRFHM8334TRPbF
V DSS 30 V V GS max ±20 V R DS(on) max 9.0 (@ V GS = V) m (@ V GS = 4.5V) 13.5 Qg (typical) 7.1 nc I D (@T C (Bottom) = 25 C) 25 A HEXFET Power MOSFET S G S S D D D D D PQFN 3.3X3.3 mm Applications Control
More information650V N-Channel MOSFET
TMA12N65H, TMP12N65H 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationN-Channel Power MOSFET 600V, 11A, 0.38Ω
N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant
More informationAUIRLS3034-7P AUTOMOTIVE GRADE. HEXFET Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
More information200V N-Channel MOSFET
2V N-Channel MOSFET TMA18N2H,TMP18N2H FEATURES Fast switching 1% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance
More informationIRL5NJ V, P-CHANNEL LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94052C. Product Summary
PD-9452C IRL5NJ744 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, P-CHANNEL Product Summary Part Number BV DSS R DS(on) I D IRL5NJ744-2V.4 -A SMD-.5 Description IRL5NJ744 is part of the International
More informationFeatures. Description. AM15572v1. Table 1. Device summary. Order codes Marking Package Packaging. STD13N65M2 13N65M2 DPAK Tape and reel
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet production data TAB 2 3 1 DPAK Figure 1. Internal schematic diagram, TAB Order code V DS R DS(on) max I D
More informationSuper Junction MOSFET
65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche
More informationSTF14N80K5, STFI14N80K5
STF14N80K5, STFI14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code V DS R DS(on) max. I D STF14N80K5 STFI14N80K5
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in
More information40V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters
More informationHCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationIRF3CMS17N80. POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 800V, N-CHANNEL PD Product Summary Part Number RDS(on) I D.
PD-97842 IRF3CMS7N8 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 8V, N-CHANNEL Product Summary Part Number RDS(on) I D IRF3CMS7N8.34 5A Low-Ohmic TO-254AA Description The MOSFET uses Infineon 8V C3 CoolMOS
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.4 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features dvanced Planar Technology Low On-Resistance P-Channel Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS
More information20V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTE8N2AT 2V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationAUIRLS3034 AUTOMOTIVE GRADE. HEXFET Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
More information100V P-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD18P1AT, TTP18P1AT 1V P-Channel Trench MOSFET APPLICATIONS Load Switches Battery Switch
More informationSTO36N60M6. N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package. Datasheet. Features. Applications.
Datasheet N-channel 600 V, 85 mω typ., 30 A, MDmesh M6 Power MOSFET in a TO LL HV package Features Order code V DS R DS(on) max. I D 600 V 99 mω 30 A Drain (TAB) Reduced switching losses Lower R DS(on)
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More information2N7622U2 IRHLNA797064
PD-97174B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE-MOUNT (SMD-2) 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D krads(si).17-56a* IRHLNA79364 3 krads(si).17-56a*
More information60V N-Channel MOSFET
FEATURES Fast switching 100% avalanche tested Improved dv/dt capability ESD protection between Gate and Source 60V N-Channel MOSFET APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply
More informationIRHNA57264SE JANSR2N7474U2 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/684 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-93816G TECHNOLOGY
PD-9386G IRHNA57264SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 25V, N-CHANNEL REF: MIL-PRF-95/684 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA57264SE
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.32 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationIRHNJ57230SE JANSR2N7486U3 R 5 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-93836C TECHNOLOGY
PD-93836C IRHNJ5723SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 2V, N-CHANNEL REF: MIL-PRF-95/74 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ5723SE
More informationHCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET
HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching
More informationIRHY57234CMSE JANSR2N7556T3 R 5 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) PD-93823D
PD-93823D RADIATION HARDENED POWER MOSFET THRU-HOLE(TO-257AA) 250V, N-CHANNEL REF: MIL-PRF-19500/705 TECHNOLOGY R 5 Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number 100 krads(si)
More informationR 7 IRHLNA N7604U2 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) PD-97177C TECHNOLOGY
PD-9777C IRHLNA7764 2N764U2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 6V, N-CHANNEL R 7 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHLNA7764 krads(si).2
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 3V N-Channel Trench MOSFET TTG9N3AT APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More informationIRHNA JANSR2N7524U2 R 5 60V, P-CHANNEL REF: MIL-PRF-19500/733 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) PD-94604D TECHNOLOGY
PD-9464D IRHNA59764 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) 6V, P-CHANNEL REF: MIL-PRF-195/733 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNA59764
More informationIRHNJ63C krads(si) A SMD-0.5
PD-9798D 2N7598U3 IRHNJ67C3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 6V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNJ67C3 krads(si) 3. 3.4A IRHNJ63C3
More informationN-channel 60 V, Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package. Features. Description. AM15810v1
N-channel 60 V, 0.0046 Ω typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V DS R DS(on) max I D STL20N6F7 60 V 0.0054 Ω 20 A 1 2 3 4 PowerFLAT
More informationAUIRFR4105Z AUIRFU4105Z
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationN-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server
More informationIRHNJ597Z30 JANSR2N7519U3 R 5 30V, P-CHANNEL REF: MIL-PRF-19500/732 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-94661C TECHNOLOGY
PD-9466C IRHNJ597Z3 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) 3V, P-CHANNEL REF: MIL-PRF-95/732 R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D QPL Part Number IRHNJ597Z3
More informationN-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description
N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low
More informationIRHNS57160 R 5 100V, N-CHANNEL. RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97879A TECHNOLOGY. Product Summary
PD-97879A IRHNS576 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) V, N-CHANNEL R 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHNS576 krads(si).2 75A* IRHNS536 3 krads(si).2
More information