Super Junction MOSFET
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1 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv / dt Rated Dual die (parallel) Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. G D S MAXIMUM RATINGS All Ratings per die: T C = 25 C unless otherwise specif ed. Symbol Parameter UNIT S Drain-Source Voltage 65 Volts Continuous Drain T C = 25 C 94 Continuous Drain T C = C 6 M Pulsed Drain Current Gate-Source Voltage Continuous 2 Volts P D Total Power T C = 25 C 833 Watts,T STG Operating and Storage Junction Temperature Range -55 to 5 T L Lead Temperature:.63" from Case for Sec. 26 C dv / dt Drain-Source Voltage slope ( = 48V, = 94A, = 25 C) 5 V/ns I AR Avalanche Current 2 7 E AR Repetitive Avalanche Energy 3 ( Id = 3.5A, Vdd = 5V ) E AS Single Pulse Avalanche Energy ( Id = 3.5A, Vdd = 5V ) 8 mj STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV (DSS) R DS(on) SS I GSS (th) Drain-Source Breakdown Voltage ( = V, = 5μA) Drain-Source On-State Resistance 3 ( = V, = 47A) Zero Gate Voltage Drain Current ( = 65V, = V) Zero Gate Voltage Drain Current ( = 65V, = V, T C = 5 C) Gate-Source Leakage Current ( = ±2V, = V) Gate Threshold Voltage ( =, = 5.8mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed ± "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - Volts Ohms μa na Volts Rev D 9-27
2 DYNAMIC CHARACTERISTICS Symbol Characteristic C iss C oss C rss Q g Q gs Q gd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions = V = 25V f = MHz = V = 3V = 25 C INDUCTIVE SWITCHING = 5V = 4V = 25 C MIN TYP MAX UNIT pf nc ns Turn-on Switching Energy 5 Turn-off Switching Energy Turn-on Switching Energy 5 Turn-off Switching Energy INDUCTIVE 25 C = 4V, = 5V = 94A, INDUCTIVE 25 C = 4V, = 5V = 94A, μj SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 94 I SM THERMAL CHARACTERISTICS Symbol R θjc R θja 2 Pulsed Source Current (Body Diode) 282 V SD Diode Forward Voltage 4 ( = V, I S = -94A).9.2 Volts r Reverse Recovery Time T j = 25 C 96 = A/μs) 27 ns Q rr Reverse Recovery Charge T j = 25 C 3 = A/μs) 43 μc I RRM Peak Recovery Current T j = 25 C 58 = A/μs) 56 Characteristic Junction to Case Junction to Ambient Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Repetitive avalanche causes additional power losses that can be calculated as P AV = E AR *f. Pulse width tp limited by Tj max. 3 Pulse Test: Pulse width < 38 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein..6 MIN TYP MAX.5 3 UNIT C/W 4 See MIL-STD-75 Method Eon includes diode reverse recovery. 6 Maximum 25 C diode commutation speed = di/dt 6A/μs Rev D 9-27 Z θjc, THERMAL IMPEDANCE ( C/W) D = Duty Factor D = t /t 2 SINGLE PULSE Peak T.5 J = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t t 2
3 Typical Performance Curves I C R, REVERSE BS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) V FIGURE 2, Low Voltage Output Characteristics.4 NORMALIZED TO &5V = 47A = V 6.5V 6V 5.5V 5V = 2V 4.5V , DRAIN CURRENT FIGURE 4, R DS (ON) vs Drain Current , Junction Temperature ( C) FIGURE 6, Breakdown Voltage vs Temperature R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) = 25 C = 25 C = -55 C, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics T C, CASE TEMPERATURE (C ) FIGURE 5, Maximum Drain Current vs Case Temperature > (ON) x R DS (ON)MAX. 25μSEC. PULSE <.5 % DUTY CYCLE , JUNCTION TEMPERATURE (C ) FIGURE 7, On-Resistance vs Temperature (TH), THRESHOLD VOLTAGE (NORMALIZED) T C, Case Temperature ( C) FIGURE 8, Threshold Voltage vs Temperature µs µs ms ms ms DC line 8 FIGURE 9, Maximum Safe Operating Area Rev D 9-27
4 Typical Performance Curves C, CAPACITANCE (pf) 6, C iss,, C oss C rss FIGURE, Capacitance vs Drain-To-Source Voltage, GATE-TO-SOURCE VOLTAGE (VOLTS) = 94A = 3V = 325V = 52V Q g, TOTAL GATE CHARGE (nc) FIGURE, Gate Charges vs Gate-To-Source Voltage 7 R, REVERSE DRAIN CURRENT = +5 C = =25 C and (ns) = 4V = 4.3 Ω = 25 C L = μh, and (ns) V SD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 2, Source-Drain Diode Forward Voltage 5 5 V = 4V DD R G T = 25 C J L = μh SWITCHING ENERGY (μj) FIGURE 3, Delay Times vs Current = 4V = 25 C L = μh E ON includes diode reverse recovery FIGURE 4, Rise and Fall Times vs Current FIGURE 5, Switching Energy vs Current Rev D 9-27 SWITCHING ENERGY (uj) V = 4V DD I = 94A D T = 25 C J L = μh E ON includes diode reverse recovery , GATE RESISTANCE (Ohms) FIGURE 6, Switching Energy vs Gate Resistance
5 % Gate Voltage T = 25 C 9% Gate Voltage = 25 C Collector Current Collector Current 9% 9% 5% % Switching Energy 5 % Collector Voltage Collector Voltage Switching Energy % Figure 7, Turn-on Switching Waveforms and Definitions Figure 8, Turn-off Switching Waveforms and Definitions 75DQ6 APT3DF6 I C V CE G D.U.T. Figure Figure 9, 2, Inductive Inductive Switching Test Test Circuit Circuit T-MAX (B2) Package Outline e SAC: Tin, Silver, Copper 4.69 (.85) 5.3 (.29).49 (.59) 2.49 (.98) 5.49 (.6) 6.26 (.64) 5.38 (.22) 6.2 (.244) Drain 2.8 (.89) 2.46 (.845).4 (.6).79 (.3) 2.2 (.87) 2.59 (.2) 4.5 (.77) Max. 9.8 (.78) 2.32 (.8). (.4).4 (.55) 5.45 (.25) BSC 2-Plcs (.3) 3.2 (.23).65 (.65) 2.3 (.84) Gate Drain Source These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Rev D 9-27
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More informationCharacteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.
General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable
More informationDescription TO-3PN D S. Symbol Parameter FDA18N50 Unit. Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds
FDA18N50 N-Channel UniFET TM MOSFET 500 V, 19 A, 265 m Features R DS(on) = 265 m (Max.) @ = 10 V, ID = 9.5 A Low Gate Charge (Typ. 45 nc) Low C rss (Typ. 25 pf) 100% Avalanche Tested Applications PDP TV
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MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
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HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More information= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)
V APT3GP1BDQ APT3GP1BDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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More informationCharacteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4.
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IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
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l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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More informationCharacteristics Symbol Rating Unit. T C=70 o C T A=25 o C 36.1 (3) T A=70 o C 28.8 (3) Pulsed Drain Current I DM 100 A 78.1.
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