HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET

Transcription

1 HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) GS =0V 00% Avalanche Tested BS = 700 V R DS(on) typ = 3.0 A June 05 D-PAK I-PAK 3 HCD6N70S.Gate. Drain 3. Source 3 HCU6N70S Absolute Maximum Ratings T C =5 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 700 V Drain Current Continuous (T C = 5 ) 3.0 A Drain Current Continuous (T C = 00 ).9 A M Drain Current Pulsed (Note ) 8.0 A Gate-Source Voltage 0 V E AS Single Pulsed Avalanche Energy (Note ) 5 mj I AR Avalanche Current (Note ) 0.9 A E AR Repetitive Avalanche Energy (Note ) 0. mj dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns P D Power Dissipation (T C = 5 ) 8 W Power Dissipation (T A = 5 )*. W - Derate above 5 0. W/ T J, T STG Operating and Storage Temperature Range -55 to +50 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R JC Junction-to-Case R JA Junction-to-Ambient* R JA Junction-to-Ambient -- 0 * When mounted on the minimum pad size recommended (PCB Mount) /W

2 Electrical Characteristics T J =5 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = V Static Drain-Source On-Resistance = 0 V, =.5 A R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = V = 700 V, = 0 V SS Zero Gate Voltage Drain Current = 560 V, T J = I GSS Gate-Body Leakage Current = 0 V, = 0 V Dynamic Characteristics C iss Input Capacitance C oss Output Capacitance = 00 V, = 0 V, f =.0 MHz C rss Reverse Transfer Capacitance R g Gate Resistance = 0 V, = 0 V, f = MHz Switching Characteristics t d(on) Turn-On Time = 350 V, =.5 A, t r Turn-On Rise Time R G = t d(off) Turn-Off Delay Time t f Turn-Off Fall Time (Note 4,5) Q g Total Gate Charge = 560 V, =.5 A nc Q gs Gate-Source Charge = 0 V nc Q gd Gate-Drain Charge (Note 4,5) nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current A V SD Source-Drain Diode Forward Voltage I S =.5 A, = 0 V V trr Reverse Recovery Time I S =.5 A, = 0 V Qrr Reverse Recovery Charge di F /dt = 00 A/ (Note 4) uc Notes ;. Repetitive Rating : Pulse width limited by maximum junction temperature. I AS =A, V DD =50V, R G =5, Starting T J =5 C 3. I SD di/dt, V DD DSS, Starting T J =5 C 4. Pulse Test : Pulse Width 5. Essentially Independent of Operating Temperature

3 Typical Characteristics, Drain Current [A] 0 - Top : 5.0 V 0.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V, Drain-Source Voltage [V] * Notes :. 300us Pulse Test. T C = 5 o C, Drain Current [A] 0 50 o C 5 o C -5 o C * Notes :. = 0V. 300us Pulse Test , Gate-Source Voltage [V] Figure. On Region Characteristics Figure. Transfer Characteristics 5 0 R DS(ON) [ ], Drain-Source On-Resistance 4 3 = 0V = 0V Note : T J = 5 o C , Drain Current [A] R, Reverse Drain Current [A] 50 o C 5 o C * Notes :. = 0V. 300us Pulse Test V SD, Source-Drain Voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitances [pf] C oss C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Note ;. = 0 V. f = MHz, Gate-Source Voltage [V] = 40V = 350V = 560V C rss , Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Note : =.5A Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics

4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage Note :. = 0 V. = 50 A T J, Junction Temperature [ o C] R DS(ON), (Normalized) Drain-Source On-Resistance * Note :. = 0 V. =.5 A T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 0 Operation in This Area is Limited by R DS(on) 3, Drain Current [A] ms 00 ms DC * Notes :. T C = 5 o C. T J = 50 o C 3. Single Pulse ms 00 s 0 s , Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area, Drain Current [A] T C, Case Temperature [ o C] Figure 0. Maximum Drain Current vs Case Temperature Z JC (t), Thermal Response * Notes : 0 0. Z JC (t) = 4.4 o C/W Max. 0.. Duty Factor, D=t /t 3. T JM - T C = P DM * Z JC (t) D= single pulse P DM t t t, Square Wave Pulse Duration [sec] Figure. Transient Thermal Response Curve

5 V 00nF 3mA 300nF Fig. Gate Charge Test Circuit & Waveform Same Type as DUT DUT 0V Q gs Q g Q gd Charge Fig 3. Resistive Switching Test Circuit & Waveforms R L 90% R G V DD ( 0.5 rated ) 0V DUT V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I AS BS BS -- V DD V DD BS I AS R G (t) 0V DUT V DD (t) t p Time

6 Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I S _ L Driver R G Same Type as DUT V DD dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 0V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f V DD Body Diode Forward Voltage Drop

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