N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..

Transcription

1 Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. FEATURES * R DS(ON) = 23m@V GS = 10 V * Ultra low gate charge ( typical 30 nc ) * Low reverse transfer capacitance ( C RSS = typical 80 pf ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability SYMBOL U55NF06 TO-251/IPAK P55NF06 TO-220 F55NF06 TO-220F D55NF06 TO-252/DPAK APPLICATION Auotmobile Convert System Networking DC-DC Power System Power Supply etc Gate TO-220/TO-220F TO-252/DPAK 2.Drain ABSOLUTE MAXIMUM RATINGS 3.Source PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current T C = 25 C 50 A I D T C = 100 C 35 A Pulsed Drain Current (Note 2) I DM 200 A Avalanche Energy Single Pulsed (Note 3) E AS 480 mj Repetitive (Note 2) E AR 13 mj Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns TO W Power Dissipation (T C =25 C) TO-251 P D 90 W TO W Junction Temperature T J +150 C Operation and Storage Temperature T STG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by T J 3. L=0.38mH, I AS =50A, =25V, R G =20, Starting T J =25 C 4. I SD 50A, di/dt300a/s, BV DSS, Starting T J =25 C Page 1/6

2 THERMAL DATA Junction to Ambient Junction to Case PARAMETER SYMBOL RATING UNIT TO C/W TO-251 JA 62 C/W TO C/W TO C/W TO-251 JC 1.28 C/W TO C/W ELECTRICAL CHARACTERISTICS (T C = 25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 A 60 V Drain-Source Leakage Current I DSS V DS = 60 V, V GS = 0 V 10 A Gate-Source Leakage Current Forward V GS = 20V, V DS = 0 V 100 na I GSS Reverse V GS = -20V, V DS = 0 V -100 na Breakdown Voltage Temperature Coefficient I BV DSS /T D = 250 A, J Referenced to 25 C 0.07 V/ C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS, I D = 250 A V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, I D = 25 A m DYNAMIC CHARACTERISTICS Input Capacitance C ISS pf V GS = 0 V, V DS = 25 V Output Capacitance C OSS pf f = 1MHz Reverse Transfer Capacitance pf C RSS ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) ns Turn-On Rise Time t R = 30V, I D =25 A, ns Turn-Off Delay Time t D(OFF) R G = 50 (Note 1, 2) ns Turn-Off Fall Time t F ns Total Gate Charge Q G nc V DS = 48V, V GS = 10 V Gate-Source Charge Q GS 9.6 nc I D = 50A (Note 1, 2) Gate-Drain Charge Q GD 10 nc DRAIN-SOURCE DIODE CHARACTERISTICS ANDMAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD I S = 50A, V GS = 0 V 1.5 V Maximum Continuous Drain-Source Diode Forward Current I S 50 A Maximum Pulsed Drain-Source Diode Forward Current I SM 200 A Reverse Recovery Time t RR I S = 50A, V GS = 0 V 54 ns Reverse Recovery Charge Q RR di F / dt = 100 A/s 81 C Notes: 1. Pulse Test: Pulse Width300s, Duty Cycle2% 2. Essentially independent of operating temperature Page 2/6

3 TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS L R G Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit V GS (Driver) P.W. Period D= P. W. Period V GS = 10V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms Page 3/6

4 TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L V DS BV DSS I AS R G 10V D.U.T. I D(t) V DS(t) t p Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms t p Time Page 4/6

5 TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) 2.5 On-Resistance Variation vs. Drain Current and Gate Voltage On State Current vs. Allowable Case Temperature C 1.0 V GS =10V C 0.5 V GS =20V 1. V GS =0V μs Test Drain Current, I D (A) Source-Drain Voltage, V SD (V) 1.6 Page 5/6

6 TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS(Normalized) Drain Current, ID,(A) Breakdown Voltage Variation vs. Junction Temperature 1. V GS =0V 2. I D =250μA Junction Temperature, T J ( C) Maximum Safe Operating Operation in This Area by R DS (on) 100μs 1ms 10ms 10ms 1. T c =25 C 2. T J =150 C 3. Single Pulse Drain-Source Voltage, V DS (V) Drain-Source On-Resistance, RDS(ON), (Normalized) Drain Current, ID (A) On-Resistance Variation vs. Junction Temperature 1. V GS =10V 2. I D =25A Junction Temperature, T J ( C) Maximum Drain Current vs. Case Temperature Case Temperature, T C ( C) Thermal Response, ZJC (t) Page 6/6