18 N Amps, 500 Volts N-CHANNEL MOSFET. Power MOSFET DESCRIPTION FEATURES SYMBOL

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1 Power MOSFET 8 Amps, 500 Volts NCHANNEL MOSFET DESCRIPTION The YR 8N50 are NChannel enhancement mode power field effect transistors (MOSFET) which are produced using YR s proprietary,planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. FEATURES * R DS(ON) = = V * Ultra low gate charge ( typical 42 nc ) * Low reverse transfer capacitance ( C RSS = typical 34 pf ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL *Pbfree plating product number:8n50 2.Drain.Gate 3.Source

2 ABSOLUTE MAXIMUM RATINGS (T C = 25, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 8N V DrainSource Voltage GateSource Voltage S ±30 V Avalanche Current (Note ) I AR 8 A Continuous Drain Current I D 8 A Pulsed Drain Current (Note ) I DM 72 A Avalanche Energy Single Pulsed (Note 2) E AS 330 mj Repetitive (Note ) E AR 28 mj Peak Diode Recovery dv/dt (Note 3) dv/dt 6.9 V/ns Junction Temperature T J 50 Operating Temperature T OPR 55 ~ 50 Storage Temperature T STG 55 ~ 50 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T C =25, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 8N50 DrainSource Breakdown Voltage BS = 0 V, I D = 250 µa 500 V DrainSource Leakage Current I DSS = 500 V, = 0 V µa GateSource Leakage Current I GSS = ±30 V, = 0 V ± na Breakdown Voltage Temperature Coefficient S BV DSS /T J I D = 250 µa, Referenced to 25 C 0.7 V/ ON CHARACTERISTICS Gate Threshold Voltage (TH) =, I D = 250µA V Static DrainSource OnState Resistance R DS(ON) = V, I D = 9.0A 0.48 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS pf Output Capacitance C OSS = 25 V, = 0 V, f = MHz pf Reverse Transfer Capacitance C RSS pf SWITCHING CHARACTERISTICS TurnOn Delay Time t D(ON) ns TurnOn Rise Time t R V DD = 400V, I D = 8A, R G = 25Ω ns TurnOff Delay Time t D(OFF) (Note 4, 5) ns TurnOff Fall Time t F ns Total Gate Charge Q G nc = 400V,I D = 8A, = V GateSource Charge Q GS 8.6 nc (Note 4, 5) GateDrain Charge Q GD 2 nc SOURCE DRAIN DIODE RATINGS AND CHARACTERISTICS DrainSource Diode Forward Voltage V SD = 0 V, I S = 8A.4 V Maximum Continuous DrainSource Diode Forward Current I S 8 A Maximum Pulsed DrainSource Diode Forward Current I SM 72 A Reverse Recovery Time t RR = 0 V, I S = 8A, 520 ns Reverse Recovery Charge Q RR di F /dt = A/µs (Note 4) 5.3 µc Notes:. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = mh, I AS = 8A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 8A, di/dt 200A/s, V DD BS Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature.

3 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted VGS Top 5 V 2 V V 8.0 V 7.0 V 6.0 V 5.5 V Bottom 5.0 V.0.0 T J = 50 C V 20 µs Pulse Width 0. Fig. Typical Output Characteristics 0. = 50 V 20 ms Pulse width , GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics VGS Top 5 V 2 V V 8.0 V 7.0 V 6.0 V 5.5 V Bottom 5.0 V 5.0V 20 µs Pulse Width 0. r DS(on), DraintoSource OnResistance (normalised) I D = 8 A VGS = V Fig. 2 Typical Output Characteristics T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature

4 C, Capacitance (pf) I SD, Reverse Drain Current (A) = 0 V, f = MHz C iss = C gs C gd, C ds shorted C rss = C gd C oss = C ds C gd C iss.0.0 T J = 50 C 0 C oss.0 C rss 0 Fig. 5 Typical Capacitance vs. DraintoSource Voltage = 0 V V SD, Sourceto Drain Voltage (V) Fig. 7 Typical SourceDrain Diode Forward Voltage, GatetoSource Voltage (V) ?? 8??? A = 400 V = 250 V = V For test circuit see figure Q G, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage 0 0. T C = 25 C T J = 50 C Single Pulse Operation in this area limited by r DS(on) µs ms ms 0 00 Fig. 8 Maximum Safe Operating Area

5 20 R D D.U.T. 6 R G V DD I D, Drain Current (A) 2 8 V Pulse width µs Duty factor 0. % Fig. a Switching Time Test Circuit 4 90 % % t d(on) t r t d(off) t f Fig. 9 Maximum Drain Current vs. Case Temperature Fig. b Switching Time Waveforms D = 0.50 Thermal Response ( Z thjc ) Single Pulse (Thermal Response) P DM t t t, Rectangular Pulse Duration (s) Notes:. Duty Factor D = t/t2 2. Peak TJ = PDM x TthJC TC Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 5 V t p L Driver R G 20 V t p D.U.T I AS 0.0 Ω V DD A A A I AS Fig. 2a Unclamped Inductive Test Circuit Fig. 2b Unclamped Inductive Waveforms

6 E AS, Single Pulse Avalanche Energy (mj) I D 7.4 A 5 A 8A Fig. 2c Maximum Avalanche Energy vs. Drain Current Top Bottom V G Q GS Q G Q GD Charge Fig. 3a Basic Gate Charge Waveform Peak Diode Recovery dv/dt Test Circuit 2 V Current regulator Same type as D.U.T. 0.2 µf 50 kω 3 ma 0.3 µf D.U.T. V DS Fig. 3b Gate Charge Test Circuit I G I D Current sampling resistors D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period = V* D.U.T. I SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD oltage Inductor current Body diode forward drop Ripple 5 % I SD * = 5 V for logic level devices Fig. 4 For NChannel

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