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1 WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 75 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) : 0.93 Ω = 100% Avalanche Tested Gate. Drain 3. Source Absolute Maximum Ratings T C =5 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 900 V Drain Current Continuous (T C = 5 ) 11.0 A Drain Current Continuous (T C = 100 ) 6.9 A M Drain Current Pulsed (Note 1) 44.0 A Gate-Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note ) 960 mj I AR Avalanche Current (Note 1) 11.0 A E AR Repetitive Avalanche Energy (Note 1) 30 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns P D Power Dissipation (T C = 5 ) 300 W - Derate above 5.38 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case R θcs Case-to-Sink /W R θja Junction-to-Ambient /7

2 Electrical Characteristics T C =5 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 50 μa V R DS(ON) Static Drain-Source On-Resistance Off Characteristics = 10 V, = 5.5 A Ω BS Drain-Source Breakdown Voltage = 0 V, = 50 μa V ΔBS /ΔT J SS I GSSF I GSSR C iss Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics = 50 μa, Referenced to V/ = 900 V, = 0 V μa = 70 V, T C = μa = 30 V, = 0 V na = -30 V, = 0 V na Input Capacitance pf = 5 V, = 0 V, C oss Output Capacitance pf f = 1.0 MHz C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Time = 450 V, = 11.0 A, ns t r Turn-On Rise Time R G = 5 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4,5) ns Q g Total Gate Charge = 70V, = 11.0 A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4,5) nc Source-Drain Diode Maximum Ratings and Characteristics N-Channel MOSFET I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current A V SD Source-Drain Diode Forward Voltage I S = 11.0 A, = 0 V V trr Reverse Recovery Time I S = 11.0 A, = 0 V ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs (Note 4) μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature. L=15mH, I AS =11.0A, =50V, R G =5Ω, Starting T J =5 C 3. I SD 11.0A, di/dt 00A/μs, BS, Starting T J =5 C 4. Pulse Test : Pulse Width 300μs, Duty Cycle % 5. Essentially Independent of Operating Temperature /7

3 Typical Characteristics 10 1 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10 1, Drain-Source Voltage [V] 1. 50μ s Pulse Test. T C = o C 5 o C -55 o C 1. = 50V. 50μ s Pulse Test , Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure. Transfer Characteristics.5 R DS(ON) [Ω ], Drain-Source On-Resistance = 0V = Note : T J = 5 R, Reverse Drain Current [A] = 0V. 50μ s Pulse Test V SD, Source-Drain voltage [V] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pf] C iss C oss C rss , Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V. f = 1 MHz, Gate-Source Voltage [V] = 180V = 450V = 70V Note : = 11A Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3/7

4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage = 0 V. = 50 μ A R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V. = 5.5 A T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 1. T C = 5 o C. T J = 150 o C 3. Single Pulse 10 µs 100 µs 1 ms 10 ms DC , Drain-Source Voltage [V] T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Z θ JC (t), Thermal Response Z θ JC (t) = 0.4 /WMa x.. Duty Factor, D=t 1 /t 3. T JM - T C = P DM * Z θ JC (t) single pulse P DM t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 4/7

5 Fig 1. Gate Charge Test Circuit & Waveform 1V 00nF 50KΩ 300nF Same Type as Q g Q gs Q gd 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = L L I AS BS BS -- BS I AS R G (t) (t) t p Time 5/7

6 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop 6/7

7 Package Dimension TO-3P 15.6± ± ±0.0 φ3.± ± ± ± ± ± ± ±0.0 3±0.0 ±0.0 1± ± ± typ 0.6± typ 7/7

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