TO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc

Transcription

1 MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device forsynchronous Rectification For Server and general purpose applications A, 80V, R DS(TYP) = 5.5mΩ@ = 10 V - Low gate charge ( typical 59 nc) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220 G G D S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter MSP120N08G Units S Drain-Source Voltage 80 V I D Drain Current - Continuous (T C =25 ) 120 A - Continuous (T C = 100 ) 67 A I DM Drain Current - Pulsed (Note 1) 420 A S Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) mj I AR Avalanche Current (Note 1) 120 A Power Dissipation (T C = 25 ) 157 W P D - Derate above W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds S 300 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter MSP120N08G Units R θjc Thermal Resistance, Junction-to-Case 0.8 /W R θja Thermal Resistance, Junction-to-Ambient 62.5 /W

2 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 250 ua V BS Breakdown Voltage Temperature / T J Coefficient I D = 250 ua, Referenced to V/ I DSS Zero Gate Voltage Drain Current = 64 V, = 0 V ua = 64 V, T C = ua I GSSF Gate-Body Leakage Current, Forward = 20 V, = 0 V na I GSSR Gate-Body Leakage Current, Reverse = -20 V, = 0 V na On Characteristics (th) Gate Threshold Voltage =, I D = 250 ua V R DS(on) Static Drain-Source On-Resistance = 10 V, I D = 60A mω g FS Forward Transconductance = 10 V, I D = 60 A (Note 3) S Dynamic Characteristics C iss Input Capacitance C oss Output Capacitance = 40 V, = 0 V, f = 1.0 MHz pf C rss Reverse Transfer Capacitance Switching Characteristics t d(on) Turn-On Delay Time t V Ds = 40 V, I D r Turn-On Rise Time = 60 A, R G = 3.0 Ω t d(off) Turn-Off Delay Time (Note3, 4) ns t f Turn-Off Fall Time Q g Total Gate Charge = 40 V, I D = 60 A, Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 3, 4) Drain-Source Diode Characteristics and Maximum Ratings V SD Drain-Source Diode Forward Voltage = 0 V, I S = 60 A V t rr Reverse Recovery Time = 0 V, I S = 60 A, ns Q rr Reverse Recovery Charge di F / dt = 100 A/us (Note 3) uc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS = 17A,L=1.0mH, =, Starting T J = 25 C 3. Pulse Test : Pulse width 300us, Duty cycle 2% 4. Essentially independent of operating temperature

3 Typical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage Figure 3. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4 Typical Characteristics (Continued) Figure 7. Maximum Drain Current VS Case Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9. Maximum Safe Operating Area Figure 10.On-Resistance Variation with Gate to Source Voltage Figure 11.Transient Thermal Response Curve

5 12V Current Regulator 200nF 50KΩ Gate Charge Test Circuit & Waveform 300nF Same Type as Q g VGS Q gs Q gd 3mA R 1 R 2 Current Sampling (I G ) Resistor Current Sampling (I D ) Resistor Charge Resistive Switching Test Circuit & Waveforms R L V in V out ( 0.5 rated ) V out 90% R G V in 10% t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms L L 1 E AS = ---- L L I 2 AS 2 BS BS -- Vary t p to obtain required peak I D I D BS I AS R G C I D (t) t p t p Time (t)

6 Peak Diode Recovery dv/dt Test Circuit & Waveforms + -- I S L Driver R G Same Type as dv/dt controlled by by 밨RG G I ISD S controlled by by Duty pulse Factor period 밆? ( Driver ) Gate Pulse Width D = Gate Pulse Period I S S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop