N-Channel Power MOSFET

Transcription

1 _Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server power supply Charger

2 General Description uses advanced GreenMOS TM technology to provide low R DS(ON) low gate charge fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. V DS min@tjmax pulse R DS(ON) VGS= V Q g 700 V 60 A 200 mω 24.8 nc Schematic and Package Information SCHEMATIC DIAGRAM D PIN ASSIGNMENT-TOP VIEW G S1 S2 G: Gate D: Drain S1: Driver Source S2: Power Source PDFN8 8 Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS 650 V Gate source voltage V GS ±30 V Continuous drain current 1) T C=25 Continuous drain current 1) T C= A Pulsed drain current 2) T C=25 pulse 60 A Power dissipation 3) T C=25 P D 151 W Single pulsed avalanche energy 5) E AS 600 mj Single pulsed avalanche current 5) I AS.9 A Repetitive avalanche energy E AR 0.8 mj Repetitive avalanche current I AR.9 A MOSFET dv/dt ruggedness V DS=0 480 V dv/dt 50 V/ns Reverse diode dv/dt V DS=0 480 V I SD dv/dt 15 V/ns Operation and storage temperature T stgt j -55 to 150 Oriental Semiconductor Copyright reserved / 9

3 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance junction-case R θjc 0.82 C/W Thermal resistance junction-ambient 4) R θja 62 C/W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition 650 V GS=0 V =250 μa Drain-source breakdown voltage BV DSS V V GS=0 V =250 μa T j=150 Gate threshold voltage V GS(th) V V DS=V GS =250 μa V GS= V = A Drain-source on-state resistance R DS(ON) 0.42 Ω V GS= V = A T j=150 Gate-source leakage current I GSS 0 V GS=30 V na -0 V GS=-30 V Drain-source leakage current SS 1 μa V DS=650 V V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss 1433 pf Output capacitance C oss 925 pf Reverse transfer capacitance C rss 3.9 pf Turn-on delay time t d(on) 40.1 ns Rise time t r 49.8 ns Turn-off delay time t d(off) 57.3 ns Fall time t f 63.7 ns V GS=0 V V DS=50 V ƒ=1 MHz V GS= V V DS=520 V R G=25 Ω =20 A Oriental Semiconductor Copyright reserved / 9

4 Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 24.8 nc Gate-source charge Q gs 7.2 nc Gate-drain charge Q gd 8.2 nc Gate plateau voltage V plateau 5.6 V =20 A V DS=520 V V GS= V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 20 Pulsed source current I SP 60 A V GS<V th Diode forward voltage V SD 1.4 V I S=20 A V GS=0 V Reverse recovery time t rr 380 ns Reverse recovery charge Q rr 5.3 μc Peak reverse recovery current I rrm 25.7 A V R=400 V I S=20 A di/dt=0 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper in a still air environment with T a=25 C. 5) V DD=150 V R G=25 Ω L=.8 mh starting T j=25 C. Oriental Semiconductor Copyright reserved / 9

5 Electrical Characteristics Diagrams Drain-source current (A) V 22 V 20 6V V 4 2 V GS = 4.5V V DS Drain-source voltage (V) Drain current(a) V DS =20 V V GS Gate-source voltage(v) Figure 1 Typ. output characteristics Figure 2 Typ. transfer characteristics 4 C Capacitance(pF) C iss C oss V GS Gate-source voltage(v) C rss V DS Drain-source voltage (V) Q g Gate charge(nc) Figure 3 Typ. capacitances Figure 4 Typ. gate charge BV DSS Drain-source breakdown voltage (V) T j Junction temperature ( ) R DS(on) On-resistance( ) T j Juntion temperature ( ) Figure 5 Drain-source breakdown voltage Figure 6 Drain-source on-state resistance Oriental Semiconductor Copyright reserved / 9

6 V th Threshold voltage (V) Is Source current(a) T j Junction Temperature ( ) V SD Source-drain voltage(v) Figure 7 Threshold voltage Figure 8 Forward characteristic of body diode R DS(ON) On-resistance( ) V GS =7 V V GS = V Drain-source current (A) Drain current(a) T C Case temperature ( ) Figure 9 Drain-source on-state resistance Figure Drain current 0 Drain current(a) 1 R DS(ON) Limited us 0 s 1ms ms 0ms DC V DS Drain-source voltage(v) Figure 11 Safe operation area T C=25 Oriental Semiconductor Copyright reserved / 9

7 Test circuits and waveforms Figure 1 Gate charge test circuit & waveform Figure 2 Switching time test circuit & waveforms Figure 3 Unclamped inductive switching (UIS) test circuit & waveforms Figure 4 Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved / 9

8 Package Information Figure1 PDFN8 8 package outline dimension Oriental Semiconductor Copyright reserved / 9

9 Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box PDFN Product Information Product Package Pb Free RoHS Halogen Free PDNF8 8 yes yes yes Oriental Semiconductor Copyright reserved / 9