IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
|
|
- Anabel Annis Blair
- 6 years ago
- Views:
Transcription
1 IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKP4N65F5,IKW4N65F5 65VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl
2 IKW4N65F5, IKP4N65F5 High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID fast and soft anti parallel diode Features and Benefits: C High speed F5 technology offering BestinClass efficiency in hard switching and resonant topologies 65V breakdown voltage Low Qg IGBT copacked with RAPID fast and soft antiparallel diode Maximum junction temperature C Qualified according to JEDEC for target applicatio Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models: G E C G C E G C E Applicatio: Solar converters Uninterruptible power supplies Welding converters Mid to high range switching frequency converters Package pin definition: Pin gate Pin 2 & backside collector Pin 3 emitter Key Performance and Package Parameters Type VCE IC VCEsat, Tvj= C Tvjmax Marking Package IKW4N65F5 65V 4A.6V C K4EF5 PGTO2473 IKP4N65F5 65V 4A.6V C K4EF5 PGTO223 2 Rev..2, 2328
3 IKW4N65F5, IKP4N65F5 Table of Contents Description Table of Contents Maximum ratings Thermal Resistance Electrical Characteristics Electrical Characteristics diagrams Package Drawing PGTO247pinGCE Package Drawing PGTO Testing Conditio Revision History Disclaimer Rev..2, 2328
4 IKW4N65F5, IKP4N65F5 Maximum ratings Parameter Symbol Value Unit Collectoremitter voltage VCE 65 V DC collector current, limited by Tvjmax TC = C TC = C IC A Pulsed collector current, tp limited by Tvjmax ICpuls 2. A Turn off safe operating area VCE 65V, Tvj C 2. A Diode forward current, limited by Tvjmax TC = C TC = C IF A Diode pulsed current, tp limited by Tvjmax IFpuls 2. A Gateemitter voltage Traient Gateemitter voltage (tp µs, D <.) VGE ±2 ±3 V Power dissipation TC = C Power dissipation TC = C Ptot W Operating junction temperature Tvj C Storage temperature Tstg C PGTO247pinGCE PGTO C M.6 Nm Soldering temperature, wave soldering.6 mm (.63 in.) from case for s Mounting torque, M3 screw Maximum of mounting processes: 3 Thermal Resistance Parameter Characteristic Symbol Conditio Max. Value Unit IGBT thermal resistance, junction case Rth(jc).6 K/W Diode thermal resistance, junction case Rth(jc).8 K/W Thermal resistance junction ambient Rth(ja) 4 62 K/W PGTO247pinGCE PGTO223 4 Rev..2, 2328
5 IKW4N65F5, IKP4N65F5 Electrical Characteristic, at Tvj = C, unless otherwise specified Parameter Symbol Conditio Value min. typ. max. 65 VGE = 5.V, IC = 4.A Tvj = C Tvj = C Tvj = C Unit Static Characteristic Collectoremitter breakdown voltage V(BR)CES VGE = V, IC =.2mA Collectoremitter saturation voltage VCEsat V V Diode forward voltage VF VGE = V, IF = 2.A Tvj = C Tvj = C Tvj = C Gateemitter threshold voltage VGE(th) IC =.4mA, VCE = VGE Zero gate voltage collector current ICES VCE = 65V, VGE = V Tvj = C Tvj = C Gateemitter leakage current IGES VCE = V, VGE = 2V na Traconductance gfs VCE = 2V, IC = 4.A 5. S V V 4. µa 4. Electrical Characteristic, at Tvj = C, unless otherwise specified Parameter Symbol Conditio Value Unit min. typ. max nc nh Dynamic Characteristic Input capacitance Cies Output capacitance Coes Reverse trafer capacitance Cres Gate charge QG VCC = 52V, IC = 4.A, VGE = 5V Internal emitter inductance measured 5mm (.97 in.) from case LE PGTO247pinGCE PGTO223 VCE = V, VGE = V, f = MHz 3. pf Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max IGBT Characteristic, at Tvj = C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = C, VCC = 4V, IC = 2.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. 5 Rev..2, 2328
6 IKW4N65F5, IKP4N65F5 Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = C, VCC = 4V, IC = 5.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery µc 2.4 A 28 A/µs µc.6 A 3 A/µs Diode Characteristic, at Tvj = C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = C, VR = 4V, IF = 2.A, dif/dt = A/µs Tvj = C, VR = 4V, IF = 5.A, dif/dt = A/µs dirr/dt Switching Characteristic, Inductive Load Parameter Symbol Conditio Value Unit min. typ. max IGBT Characteristic, at Tvj = 5 C Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Turnon delay time td(on) Rise time tr Turnoff delay time td(off) Fall time tf Turnon energy Eon Turnoff energy Eoff Total switching energy Ets Tvj = 5 C, VCC = 4V, IC = 2.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. Tvj = 5 C, VCC = 4V, IC = 5.A, VGE =./5.V, rg = 5.Ω, Lσ = 3nH, Cσ = 3pF Lσ, Cσ from Fig. E Energy losses include tail and diode reverse recovery. 6 Rev..2, 2328
7 IKW4N65F5, IKP4N65F5 Diode Characteristic, at Tvj = 5 C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recovery current during tb Tvj = 5 C, VR = 4V, IF = 2.A, dif/dt = A/µs Tvj = 5 C, VR = 4V, IF = 5.A, dif/dt = A/µs dirr/dt µc 7. A 22 A/µs 5.5 µc 4. A 5 A/µs Rev..2, 2328
8 IKW4N65F5, IKP4N65F5 2 Ptot, POWER DISSIPATION [W] IC, COLLECTOR CURRENT [A] 2 tp=µs µs 5µs µs 2µs 2 5 5µs 5 DC. VCE, COLLECTOREMITTER VOLTAGE [V] 5 5 TC, CASE TEMPERATURE [ C] Figure. Forward bias safe operating area (D=, TC= C, Tvj C; VGE=5V. Recommended use at VGE 7.5V) Figure 2. Power dissipation as a function of case temperature (Tvj C) VGE=2V 6 IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] V 8 5V 2V 6 V 8V 7V 4 6V 5V TC, CASE TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 3. Collector current as a function of case temperature (VGE 5V, Tvj C) Figure 4. Typical output characteristic (Tvj= C) 8 Rev..2, 2328
9 IKW4N65F5, IKP4N65F5 2 2 Tj= C Tj=5 C IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] VGE=2V 8V 8 5V 2V 6 V 8V 7V 4 6V V VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] Figure 5. Typical output characteristic (Tvj=5 C) Figure 6. Typical trafer characteristic (VCE=2V) 2.5 IC=A IC=2A IC=4A 2. td(off) tf td(on) tr 2. t, SWITCHING TIMES [] VCEsat, COLLECTOREMITTER SATURATION [V] Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure 7. Typical collectoremitter saturation voltage as Figure 8. Typical switching times as a function of a function of junction temperature collector current (VGE=5V) (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, rg=5ω, Dynamic test circuit in Figure E) 9 Rev..2, 2328
10 IKW4N65F5, IKP4N65F5 td(off) tf td(on) tr t, SWITCHING TIMES [] t, SWITCHING TIMES [] td(off) tf td(on) tr rg, GATE RESISTOR [Ω] Figure 9. Typical switching times as a function of gate resistor (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, IC=2A,Dynamic test circuit in Figure E) 5 8 typ. min. max. 5. Eoff Eon Ets 7 E, SWITCHING ENERGY LOSSES [] VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] Figure. Typical switching times as a function of junction temperature (inductive load, VCE=4V, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E) Tvj, JUNCTION TEMPERATURE [ C] 5 5 Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure. Gateemitter threshold voltage as a function of junction temperature (IC=.4mA) Figure 2. Typical switching energy losses as a function of collector current (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, rg=5ω,dynamic test circuit in Figure E) Rev..2, 2328
11 IKW4N65F5, IKP4N65F5.6.8 Eoff Eon Ets.7 E, SWITCHING ENERGY LOSSES [] E, SWITCHING ENERGY LOSSES [] Eoff Eon Ets rg, GATE RESISTOR [Ω] Figure 3. Typical switching energy losses as a function of gate resistor (inductive load, Tvj=5 C, VCE=4V, VGE=5/V, IC=2A, Dynamic test circuit in Figure E) 5 3V 52V 4 VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [] 6 Eoff Eon Ets Figure 4. Typical switching energy losses as a function of junction temperature (inductive load, VCE=4V, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E)..9 5 Tvj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 5. Typical switching energy losses as a function of collector emitter voltage (inductive load, Tvj=5 C, VGE=5/V, IC=2A, rg=5ω,dynamic test circuit in Figure E) QGE, GATE CHARGE [nc] Figure 6. Typical gate charge (IC=4A) Rev..2, 2328
12 IKW4N65F5, IKP4N65F5 E+4 Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] Ciss Coss Crss C, CAPACITANCE [pf] D= single pulse. i: ri[k/w]: τi[s]: 7.3E5 7.E E6 3.. E5 VCE, COLLECTOREMITTER VOLTAGE [V] E4... tp, PULSE WIDTH [s] Figure 7. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=mhz) Figure 8. IGBT traient thermal resistance (D=tp/T) D= single pulse.. E7 Tj= C, IF = 2A Tj=5 C, IF = 2A 2 trr, REVERSE RECOVERY TIME [] Zth(jc), TRANSIENT THERMAL RESISTANCE [K/W] i: 2 3 ri[k/w]: τi[s]: 3.4E4 4.7E E6 E5 E tp, PULSE WIDTH [s] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 9. Diode traient thermal impedance as a function of pulse width (D=tp/T) Figure 2. Typical reverse recovery time as a function of diode current slope (VR=4V) 2 Rev..2, 2328
13 IKW4N65F5, IKP4N65F5.2 2 Tj= C, IF = 2A Tj=5 C, IF = 2A Tj= C, IF = 2A Tj=5 C, IF = 2A 9 Irr, REVERSE RECOVERY CURRENT [A] Qrr, REVERSE RECOVERY CHARGE [µc] dif/dt, DIODE CURRENT SLOPE [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery charge as a function of diode current slope (VR=4V) Figure 22. Typical reverse recovery current as a function of diode current slope (VR=4V) 5 6 Tj= C, IF = 2A Tj=5 C, IF = 2A Tj= C Tj=5 C 5 IF, FORWARD CURRENT [A] dirr/dt, diode peak rate of fall of Irr [A/µs] dif/dt, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 23. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) Figure 24. Typical diode forward current as a function of forward voltage 3 Rev..2, 2328
14 IKW4N65F5, IKP4N65F5 2. IF=A IF=2A IF=4A VF, FORWARD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Figure. Typical diode forward voltage as a function of junction temperature 4 Rev..2, 2328
15 IKW4N65F5, IKP4N65F5 PGTO Rev..2, 2328
16 IKW4N65F5, IKP4N65F5 PGTO223 6 Rev..2, 2328
17 IKW4N65F5, IKP4N65F5 a a b b t 7 Rev..2, 2328
18 IKW4N65F5, IKP4N65F5 Revision History IKW4N65F5, IKP4N65F5 Revision: 2328, Rev..2 Previous Revision Revision Date Subjects (major changes since last revision). 229 Preliminary data sheet New Marking Pattern We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 8726 Munich, Germany 8726 München, Germany 23 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditio or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditio and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applicatio or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other perso may be endangered. 8 Rev..2, 2328
InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl
InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHWNR Datasheet IndustrialPowerControl IHWNR Reverse conducting IGBT with monolithic body diode Features: C Powerful monolithic body
IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode
IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode IKQ1N6TA 6Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl
IGBT Highspeed5IGBTinTRENCHSTOP TM technologycopackedwithrapid1 fastandsoftantiparalleldiode
IGBT HighspeedIGBTinTRENCHSTOP TM technologycopackedwithrapid fastandsoftantiparalleldiode 6VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl Highspeedswitchingseriesfifthgeneration
IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode 5VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl Highspeedswitchingseriesfifthgeneration
IGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKW3N65EL5 6VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl IKW3N65EL5
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryantiparalleldiode IKWN6H3 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration
IGBT HighspeedIGBTinTrenchandFieldstoptechnology. IGW50N60H3 600Vhighspeedswitchingseriesthirdgeneration. Datasheet. IndustrialPowerControl
IGBT HighspeedIGBTinTrenchandFieldstoptechnology 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology
HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode
IKYNCS Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBTinTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: VTRENCHSTOP TM IGBTtechnologyoffering:
HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C 2VTRENCHSTOP
HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C VTRENCHSTOP TM
IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Best in class TO247 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted
TrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand
IDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy
IDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling
ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW40N135R3. Datasheet. IndustrialPowerControl
ReverseconductingIGBTwithmonolithicbodydiode IHWN5R Datasheet IndustrialPowerControl G C E IHWN5R ReverseconductingIGBTwithmonolithicbodydiode Features: Offersnewhigherbreakdownvoltageto5Vforimproved reliability
IHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Short circuit withstand time 10µs Designed for : Soft Switching Applications Induction
LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryanti-parallelemittercontrolleddiode
IKQ12N6T LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C VerylowVCE(sat)1.5V(typ.) Maximumjunctiontemperature175 C Shortcircuitwithstandtime5µs
STGW40H120DF2, STGWA40H120DF2
STGW4H12DF2, STGWA4H12DF2 Trench gate field-stop IGBT, H series 12 V, 4 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
Features. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube
Automotivegrade trench gate fieldstop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet production data Features AECQ101 qualified 6 µs of shortcircuit withstand time VCE(sat)
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package Datasheet - production data Features Maximum junction temperature: TJ = 175 C Kelvin pin Minimized tail current Low saturation
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation
STGW80H65DFB, STGWT80H65DFB
STGW80H65DFB, STGWT80H65DFB Trench gate fieldstop IGBT, HB series 650 V, 80 A high speed Datasheet production data TAB 3 2 1 TO247 TO3P Figure 1: Internal schematic diagram 1 3 2 Features Maximum junction
STGFW40V60DF, STGW40V60DF, STGWT40V60DF
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed. Features. Description
Trench gate fieldstop IGBT, HB series 650 V, 20 A high speed Datasheet production data TAB 3 2 1 TO3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C Minimized tail
TrenchStop Series. Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Approx. 1.0V reduced V CE(sat) and 0.5V reduced V F compared to BUP314D Short circuit withstand
Features. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package Datasheet - production data Features 6 μs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 3 2 1 TO-3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C High speed
Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO247 3 2 Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V (typ.)
Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed. Features. Ignition. Description
Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data TAB 2 3 1 D²PAK Features AEC-Q101 qualified Maximum junction temperature: TJ = 175 C Logic level
Features. Description. NG4K3E2C1_no_d. Table 1: Device summary Order code Marking Package Packaging STGW80H65FB-4 G80H65FB TO247-4 Tube
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed in TO247-4 package Datasheet - production data Features VCE(sat) = 1.6 V (typ.) @ IC = 80 A Maximum junction temperature: TJ = 175 C High speed
HighspeedswitchingseriesthirdgenerationIGBTcopackedwithRapid1 fastandsoftantiparalleldiodeinfullyisolatedpackage
IKFW5N6DH3E HighspeedswitchingseriesthirdgenerationIGBTcopackedwithRapid fastandsoftantiparalleldiodeinfullyisolatedpackage Features: C TRENCHSTOP technologyoffers: Shortcircuitwithstandtime5µsatTvj=75
XI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description G1C2TE3
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C(2, TAB) G(1) E(3) Features Maximum junction temperature:
STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD
STGB19NC60KDT4, STGF19NC60KD, 20 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 2 D PAK TAB 1 2 3 TO-220FP Features Low on voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction
STGFW40H65FB, STGW40H65FB, STGWA40H65FB, STGWT40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TO-3PF 1 2 3 TAB TO-247 1 2 3 Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
10 A, 600 V short-circuit rugged IGBT
10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel
SG200-12CS2 200A1200V IGBT Module
Typical applications: AC and DC electric motor control Frequency transformer UPS Industry power supply Electric welding machine Characteristics: SPT chip (soft-punch-through) MOS input control Ultra thin
STGW60H65DFB STGWT60H65DFB
STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching
VCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W
FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive
TC=25 C, Tj=150 C Note *1
FGW75N6HD (High-Speed V series) 6V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner
MBN1000FH65G2 Silicon N-channel IGBT 6500V G2 version
Silicon N-channel IGBT 65V G2 version Spec.No.IGBT-SP-1639 R2 P1 FEATURES Low dv/dt noise, low switching loss & low conduction loss Soft low-injection punch-through Novel Side-gate High conductivity IGBT
STGW50HF60SD. 60 A, 600 V, very low drop IGBT with soft and fast recovery diode. Features. Application. Description
60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features Very low otate voltage drop Low switching off High current capability Very soft ultra fast recovery antiparallel diode Application
VCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W
FGWNHD (High-Speed V series) V / A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner
STGW28IH125DF STGWT28IH125DF
STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T J = 175 C Minimized
STGW40V60DF STGWT40V60DF
STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching
STGW40V60DF STGWT40V60DF
STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching
STGFW20H65FB, STGW20H65FB, STGWT20H65FB
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TO-247 TAB 3 2 1 TO-3P 1 1 2 3 2 1 TO-3PF Figure 1. Internal schematic
Item Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current
Spec.No.IGBT-SP-162 R1 P1 Silicon N-channel IGBT 33V F version FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity
STGW60H65FB STGWT60H65FB
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized
MBN1500FH45F Silicon N-channel IGBT 4500V F version
Silicon N-channel IGBT 4500V F version Spec.No.IGBT-SP-15014 R7 P1 FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity
NGTB30N60L2WG. N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V
Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) IGBT IC=100A (Tc=25 C)
MBN1200F33F-C 3300V Silicon N-channel IGBT F version with SiC Diode
MBNF33F-C 33V Silicon N-channel IGBT F version with SiC Diode Spec.No.IGBT-SP-5 R P FEATURES Soft switching & low conduction loss IGBT : Soft low-injection punch-through High conductivity IGBT with advanced
MIDA-HB12FA-600N IGBT module datasheet
Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC
ABB HiPak TM. IGBT Module 5SNG 0150P VCE = 4500 V IC = 150 A
VCE = 45 V IC = 5 A ABB HiPak TM IGBT Module 5SNG 5P453 Doc. No. 5SYA 593-4 7-23 Ultra low loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC High iulation package AlSiC base-plate
Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
WGW15G120N. Applications General purpose inverter Frequency converters Induction Heating(IH) Uninterrupted Power Supply(UPS)
Low Loss IGBT Features 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=100 low Gate charge(typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMI Pb-free lead plating; RoHS compliant Applications
Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current
IGBT MODULE Silicon N-channel IGBT 17V G version Spec.No.IGBT-SP-163 R P 1 FEATURES High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
7MBR35VKB125 IGBT MODULE (V series) 12V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter
Collector-Emitter voltage VCES 600 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 100
7MBRVP65 IGBT MODULE (V series) 6V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Ic Continuous Tc=80 C 35 Icp 1ms Tc=80 C 70 -Ic 35 -Ic pulse 1ms 70 Collector power dissipation Pc 1 device 210 W
7MBR35VP15 IGBT MODULE (V series) 1V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Data Sheet Explanation
Data Sheet Explanation V1.2 2014-04 Edition 2014-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=80 C 450
IGBT MODULE (V series) V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Industry standard 62mm IGBT module. IGBT chip. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 62mm IGBT module MIAA-HB12FA-3N 12 V 3 A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low
Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR1VB65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 50
IGBT MODULE (V series) 12V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VA5 IGBT MODULE (V series) V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Viso AC : 1min VAC
MBIVA5 IGBT MODULE (V series) V / A / in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply
Package. Absolute maximum ratings (Ta=25 ) Characteristic Symbol Ratings Unit
Oct.2 Features Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area Low saturation voltage IGBT VCE(sat) =.7V max Low saturation voltage diode bridge VF =.V max
MBL1200E17F Silicon N-channel IGBT 1700V F version
Silicon N-channel IGBT 1700V F version Spec.No.IGBT-SP-15018 R2 P1 1.FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low
ABB HiPak. IGBT Module 5SNA 2400E VCE = 1700 V IC = 2400 A
VCE = 7 V IC = 24 A ABB HiPak IGBT Module 5SNA 24E7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power cycling
ABB HiPak. IGBT Module 5SNA 1200G VCE = 4500 V IC = 1200 A
VCE = 45 V IC = 2 A ABB HiPak IGBT Module 5SNA 2G453 Doc. No. 5SYA 4-5 3-26 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VR-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIKW40N65DH5 650V 40A 1.66V 175 C AK40EDH5 PG-TO247-3
HighspeedfastIGBTinTRENCHSTOP TM 5technologycopackedwith RAPIDfastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering: BestinClassefficiencyinhardswitchingandresonant topologies
Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 34mm IGBT module MIFA-HB12FA-N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of C o square RBSOA of 2xIC o low EMI FRD chip
C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI6VD-6-5 IGBT MODULE (V series) 6V / 6A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
Industry standard 34mm IGBT module. o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 10 µs short circuit of 150 C
Industry standard 34mm IGBT module MIFA-HB12FA-1N Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o 1 µs short circuit of 15 C o square RBSOA of 2xIC o low EMI FRD
Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Ic Continuous Tc=100 C 100
6MBIVB125 IGBT MODULE (V series) 12V / A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
Continuous. Ic pulse 1ms 900. C Case temperature TC 125 Storage temperature Tstg -40 to N m Terminals (*4) - 4.5
6MBI45V25 IGBT MODULE (V series) 2V / 45A / 6 in one package Features Compact Package P.C.Board Mount Low VCE (sat) RoHS Compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier
ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode IKW30N65WR5. Datasheet. InductrialPowerControl
ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode IKW3N65WR5 Datasheet InductrialPowerControl IKW3N65WR5 ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode Features:
NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel
IGBT 600V, 4.5A, N-Channel Features Reverse Conducting II IGBT IGBT VCE(sat)=1.7V (typ) [IC=A, VGE=15V] IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=A] Diode trr=65ns (typ) 5 s Short Circuit Capability Applications
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VC-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI75VA-12-5 IGBT MODULE (V series) 12V / 75A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
MG400V2YS60A MG400V2YS60A. High Power Switching Applications Motor Control Applications. Equivalent Circuit
MGV2YS6A TOSHIBA IGBT Module Silicon N Channel IGBT MGV2YS6A High Power Switching Applications Motor Control Applications Unit in mm The electrodes are isolated from case. Enhancement mode Thermal output
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous
1MBI2U4H-12L-5 IGBT MODULE (U series) 12V / 2A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive
Tc=100 C 300 Tc=25 C 360 Collector current
2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
Icp 1ms TC=80 C 60 -Ic 30. IC Continuous TC=80 C 30 ICP 1ms TC=80 C 60. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR3VKA65 IGBT MODULE (V series) 6V / 3A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
Value Parameter Symbol Conditions
Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi.com Features IGBT VCE (sat)=1.5v typ. (IC=10A, VGE=15V) IGBT IC=20A (Tc=25 C) Adaption of full
Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20
7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
STGW60V60DF STGWT60V60DF
1 2 3 TO-247 TO-3P 2 1 Figure 1. Internal schematic diagram 3 STGW6V6DF STGWT6V6DF 6 V, 6 A very high speed trench gate field-stop IGBT Features Datasheet - production data Very high speed switching series
AFGHL40T65SPD. Field Stop Trench IGBT 40 A, 650 V
AFGHL4T65SPD Field Stop Trench IGBT 4 A, 65 V Description Using the novel field stop 3 rd generation IGBT technology, AFGHL4T65SPD offers the optimum performance with both low conduction loss and switching
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing. Features. Description. Table 1: Device summary
Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing Datasheet - production data Features AEC-Q101 qualified Low-loss series IGBT Low VCE(sat) = 1.55 V (typ.) at IC = 200
"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
INT-A-PAK "Half-Bridge" IGBT INT-A-PAK FEATURES Vishay High Power Products Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 khz to 4 khz in hard switching, > 2 khz in resonant mode Very
n-channel Power MOSFET
n-channel Power MOSFET OptiMOS Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient
LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode
AIKQ12N6CT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C AutomotiveAECQ11qualified DesignedforDC/ACconvertersforAutomotiveApplication