NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel

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1 IGBT 600V, 4.5A, N-Channel Features Reverse Conducting II IGBT IGBT VCE(sat)=1.7V (typ) [IC=A, VGE=15V] IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=A] Diode trr=65ns (typ) 5 s Short Circuit Capability Applications General Purpose Inverter Electrical Connection N-Channel 1,4 1:Gate :Collector :Emitter 4:Collector Specifications Absolute Maximum Ratings at Ta=5 C, Unless otherwise specified Parameter Symbol Value Unit Collector to Emitter Voltage VCES 600 V Gate to Emitter Voltage VGES 0 V Collector Current C * 9 A Limited by C * IC * A Collector Current (Peak) Pulse width Llimited by Tjmax ICP 1 A Diode Average Output Current IO 4.5 A Power Dissipation Tc=5 C (Our ideal heat dissipation condition) * PD 49 W Junction Temperature Tj 175 C Storage Temperature Tstg 55 to +175 C Note : *1 Collector Current is calculated from the following formula. Tjmax - Tc I C (Tc)= Rth(j-c) VCE(sat) (IC(Tc)) * Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. 1 Marking Diagram 1 Gate Collector Emitter GTB060R A Y WW G 4 AYWW GTB 060RG DPAK CASE 69C 4 Collector = Device Code = Assembly Location = Year = Work Week = Pb-Free Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 015 September Rev. 1 Publication Order Number : NGTB0N60RDT4G/D

2 Electrical Characteristics at Ta=5 C, Unless otherwise specified Value Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V(BR)CES IC=1mA, VGE=0V 600 V Tc=5 C 10 A Collector to Emitter Cut off Current ICES VCE=600V, VGE=0V Tc=150 C 1 ma Gate to Emitter Leakage Current IGES VGE= 0V, VCE=0V 100 na Gate to Emitter Threshold Voltage VGE(th) VCE=0V, IC=80 A V Tc=5 C V Collector to Emitter Saturation Voltage VCE(sat) VGE=15V, IC=A Tc=100 C 1.9. V Forward Diode Voltage VF IF=A V Input Capacitance Cies 415 pf Output Capacitance Coes VCE=0V, f=1mhz 17 pf Reverse Transfer Capacitance Cres 10 pf Turn-ON Delay Time td(on) 7 ns Rise Time tr 17 ns VCC=00V, IC=A Turn-ON Time ton RG=0, L=500 H 85 ns Turn-OFF Delay Time td(off) VGE=0V/15V 59 ns Fall Time tf Vclamp=400V 75 ns Turn-OFF Time toff Tc=5 C 17 ns Turn-ON Energy Eon See Fig.1, See Fig. 50 J Turn-OFF Energy Eoff 7 J Total Gate Charge Qg 17 nc Gate to Emitter Charge Qge VCE=00V, VGE=15V, IC=A 4.4 nc Gate to Collector Miller Charge Qgc 7.6 nc Diode Reverse Recovery Time trr IF=A,di/dt=00A/ s, VCC=00V, See Fig. 65 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta=5 C, Unless otherwise specified Parameter Symbol Conditions Value Unit Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) Tc=5 C.06 C/W (Our ideal heat dissipation condition) * Thermal Resistance (Junction to Ambient) Rth(j-a) 100 C/W Note : * Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum.

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6 00 trr -- IF 180 Reverse Recovery Time, trr -- ns Thermal Resistance, Rth(j-c) -- ºC/W Duty Cycle= Single Pulse Forward Current, I F -- A Tc=5 C V CC =00V di/dt=00a/μs Rth(j-c) -- Pulse Time Pulse Time, PT -- s Fig.1 Switching Time Test Circuit Diode Fig. Timing Chart VGE 90% 0 NGTB0N60RDT4G R G DUT 500 H VCC 0 IC VCE 90% tf tr 90% td(off) toff td(on) ton Fig. Reverse Recovery Time Test Circuit Eoff Eon NGTB0N60RDT4G DUT 500 H VCC Driver IGBT 6

7 Package Dimensions DPAK (SINGLE GAUGE) CASE 69C ISSUE F L L4 b e b TOP VIEW 1 : Gate : Collector : Emitter 4 : Collector L GAUGE PLANE STYLE 1: PIN 1. BASE. COLLECTOR. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1. MT. GATE 4. MT E b 4 1 L L1 D STYLE : PIN 1. GATE. DRAIN. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE. COLLECTOR. EMITTER 4. COLLECTOR A NOTE 7 DETAIL A ROTATED 90 CW B (0.1) M C A1 H C c STYLE : PIN 1. ANODE. CATHODE. ANODE 4. CATHODE STYLE 8: PIN 1. N/C. CATHODE. ANODE 4. CATHODE DETAIL A SEATING PLANE A SIDE VIEW SOLDERING FOOTPRINT* C c STYLE 4: PIN 1. CATHODE. ANODE. GATE 4. ANODE STYLE 5: PIN 1. GATE. ANODE. CATHODE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE. CATHODE. ANODE. RESISTOR ADJUST. CATHODE 4. CATHODE 4. ANODE H Z BOTTOM VIEW ALTERNATE CONSTRUCTIONS BOTTOM VIEW Z Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: INCHES.. THERMAL PAD CONTOUR OPTIONAL WITHIN DI- MENSIONS b, L and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. INCHES MILLIMETERS DIM MIN MAX MIN MAX A A b b b c c D E e BSC.9 BSC H L L REF.90 REF L 0.00 BSC 0.51 BSC L L Z GENERIC MARKING DIAGRAM* XXXXXXG ALYWW IC AYWW XXX XXXXXG Discrete XXXXXX = Device Code A = Assembly Location L = Wafer Lot Y = Year WW = Work Week G = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. SCALE :1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7

8 ORDERING INFORMATION NGTB0N60RDT4G Device Marking Package Shipping (Qty / Packing) AYWW GTB 060RG DPAK (SINGLE GAUGE) (Pb-Free / Halogen Free) 500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 8