SBT700-06RH. Schottky Barrier Diode 60V, 70A, VF; 0.66V Dual To-3PF-3L Cathode Common
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1 Ordering number : ENA16A SBT-6RH Schottky Barrier Diode 6V, A, VF;.66V Dual To-PF-L Cathode Common Applications High frequency rectification (switching regulators, converters, choppers) Features Guaranteed up to Tj= C Fast reverse recovery time High reliability due to highly reliable planar structure Low forward voltage (VF max=.66v) Low switching noise Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 6 V Nonrepetitive Peak Reverse Surge Voltage VRSM 66 V Average Output Current IO Hz resistive load, Sine Tc=44 C A Surge Forward Current IFSM Hz sine, 1 cycle A Junction Temperature Tj C Storage Temperature Tstg -- to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 8A- Ordering & Package Information Device Package Shipping memo SBT-6RH-1E TO-PF-L SC-94 pcs./tube Pb-Free SBT-6RH-1E Marking SBT 6 LOT No. Electrical Connection : Anode : Cathode : Anode TO-PF-L Semiconductor Components Industries, LLC, 1 June, 1 1 TKIM TC-8/D169SD TKIM TC-1 No. A16-1/
2 SBT-6RH Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Reverse Voltage VR IR=mA, Tc= C * 6 V Forward Voltage VF IF=A, Tc= C *.66 V Reverse Current IR VR=V, Tc= C * 1 ma Interterminal Capacitance C VR=V, Tc= C *, f=khz pf Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 1. C / W Note) * : Value per element. Forward Current, I F -- A Average Forward Power Dissipation, P F (AV) -- W 6 IF -- VF Tc= C C Sine 18 6 Forward Voltage, V F -- V PF(AV) -- IO (1) Represented by max IT161 (1) =6 () = () =18 (4)Sine = Average Output Current, I O -- A IT16 () (4) () Reverse Current, I R -- A Average Reverse Power Dissipation, P R (AV) -- W.1 Tc= C max C typ IR -- VR 1 C typ C typ 6 8 Reverse Voltage, V R -- V IT16 PR(AV) -- VRM P R max at Tj= C (1) (1) = () = () =18 () (4)Sine =18 1 Sine VR VR 6 Peak Reverse Voltage, V RM -- V IT164 () (4) No. A16-/6
3 SBT-6RH Case Temperature, Tc -- C Surge Forward Current, I FSM (Peak) -- A 1 1 Tc -- IO (1) =6 () = () =18 (4)Sine =18 (1) () () (4) Average Output Current, I O -- A IT16 IFSM -- t Current form Hz sine 16 8 I S Sine 18 ms t 6.1 Time, t -- s ID1 Transient Thermal Resistance, Rth(j-c) -- C / W Interterminal Capacitance, C -- pf C -- VR f=khz Reverse Voltage, V R -- V IT166 Rth(j-c) -- t.1.1 Time, t -- s IT16 No. A16-/
4 SBT-6RH Outline Drawing SBT-6RH-1E Mass (g) Unit. * For reference mm No. A16-4/6
5 SBT-6RH ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A16-/
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More informationMCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6
Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features
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Ordering number : ENA1184A ECH866R N-Channel Power MOSFET V, 8A,.mΩ, Dual ECH8 http://onsemi.com Features Low ON-resistance.V drive Common-drain type Protection diode in Built-in gate protection resistor
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MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
More information125 C/W. Value Parameter Symbol Conditions
Power MOSFET 250V, 6.5Ω, 350mA, Single N-Channel Features On-Resistance RDS(on)1=5Ω (typ) 2.5V Drive Pb-Free, Halogen Free and RoHS Compliance ESD Diode - Protected Gate Low Ciss and High Speed Switching
More informationParameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS ±30 V
Ordering number : ENAC SK98FS N-Channel Power MOSFET V, A,.Ω, TO-F-FS http://onsemi.com Features ON-resistance RDS(on)=.8Ω (typ.) V drive Input capacitance Ciss=pF (typ.) Repetitive avalanche guarantee
More informationMRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive
More informationEMH2604. Power MOSFET 20V, 4A, 45mΩ, 20V, 3A, 85mΩ, Complementary Dual EMH8. Features. Specifications
Ordering number : EN96A EMH64 Power MOSFET V, 4A, 4mΩ, V, A, 8mΩ, Complementary Dual EMH8 http://onsemi.com Features Nch + Pch MOSFET ON-resistance Nch : RDS(on)1=4mΩ(typ.) Pch : RDS(on)1=6mΩ(typ.) 1.8V
More informationCPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications
CPH64 Power MOSFET 6V, 1mΩ, 4A, Single P-Channel Features ON-resistance RDS(on)1=mW(typ.) 4V Drive ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings
More informationLA6581DM. Fan Motor Driver BLT Driver Single-Phase Full-Wave
Ordering number : ENA2264 Monolithic Linear IC Fan Motor Driver BLT Driver Single-Phase Full-Wave Overview The is a low-saturation BTL output linear driving motor driver for single-phase bipolar fan motors.
More informationLow-frequency Amplifer, high-speed switching small motor drive, muting circuit
Ordering number : EN16A CMH Bipolar Transistor V,.A, Low VCE(sat) NPN Single MCPH http://onsemi.com Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features
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Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
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More informationStrobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers
Ordering number : EN181B SD168 Bipolar Transistor V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features
More information15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
More information(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
More information2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications
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More informationLA5774. Overview The LA5774 is a Separately-excited step-down switching regulator (variable type).
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More information1.05 W epoxy board Operating temperature Topr 20 to +100 C Storage temperature Tstg 55 to +150 C
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Ordering number : ENA18B ECH866 Power MOSFET V, 4.A, 9mΩ, V, 4.A, 9mΩ, Complementary Dual ECH8 http://onsemi.com Features The ECH866 incorporates an N-channel MOSFET and a P-channel MOSFET that feature
More information500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
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Ordering number : EN18B MCH1/MCH Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features
More informationCPH3455. Power MOSFET 35V, 104mΩ, 3A, Single N-Channel
Power MOSFET 35V, 104mΩ, 3A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationHigh-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption
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SK596S JFET V, 15 to 5µA, 1.mS, N-Channel Features Low output noise voltage : VNO= -11dB max (VCC=4.5V, RL=1kW, Cin=15pF, VIN=V, A curve) Especiallysuited for use in condenser microphone for audio equipments
More informationELECTRICAL CONNECTION
Power MOSFET 30V, 215mΩ, 2.0A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationCPH3360. Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel
Power MOSFET 30V, 303mΩ, 1.6A, Single P-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
More informationLow collector-to-emitter saturation voltage Fast switching speed
Ordering number : EN19B SB114/SD164 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment
More informationECH8659. Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel
Power MOSFET 30V, 24mΩ, 7A, Dual N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device
More informationTIG067SS. N-Channel IGBT 400V, 150A, VCE(sat);3.8V Single SOIC8. Features. Specifications. TIG 067 LOT No.
Ordering number : ENA16 TIG6SS N-Channel IGBT 4V, 1A, VCE(sat);.8V Single SOIC8 http://onsemi.com Features Low-saturation voltage Enhansment type High speed switching 4.V drive Built-in Gate-to-Emitter
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Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT
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