Item Symbol Unit MBM1000FS17G Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

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1 IGBT MODULE Silicon N-channel IGBT 17V G version Spec.No.IGBT-SP-163 R P 1 FEATURES High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable large current easily handled by paralleling Equipped with current sensing terminals ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Circuit diagram Item Symbol Unit Collector Emitter Voltage V CES V 1,7 Gate Emitter Voltage V GES V 2 Collector Current DC I C 1, A 1ms I CM 2, Forward Current DC I F 1, A 1ms I FM 2, Junction Temperature T vj op o C -5 ~ +15 Storage Temperature T stg o C -55 ~ +15 Isolation Voltage V ISO V RMS,(AC 1 minute) Screw Torque Terminals (M3/M8) M N m.8/15 Mounting (M6) M 6. (1) Notes: (1) Recommended Value 5.5.5N m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES ma VCE=1,7V, VGE=V, Tvj =25 o C VCE=1,7V, VGE=V, Gate Emitter Leakage Current IGES na VGE= 2V, VCE=V, Tvj =25 o C Collector Emitter Saturation Voltage VCEsat V IC=1,A, VGE=15V, Tvj =25 o C IC=1,A, VGE=15V, Gate Emitter Threshold Voltage VGE(th) V VCE=1V, IC=1,mA, Tvj =25 o C Input Capacitance Cies nf VCE=1V, VGE=V, f=1khz, Tvj =25 o C Internal Gate Resistance Rg(int) Ω VCE=1V, VGE=V, f=1khz, Tvj =25 o C Rise Time tr VCC=9V, IC=1,A Switching Times Turn On Time ton Ls=nH s Fall Time tf RG(on/off)=2.7Ω/1Ω (2) Turn Off Time toff VGE= 15V, Forward Voltage Drop VF V IF=1,A, VGE=V, Tvj =25 o C IF=1,A, VGE=V, Reverse Recovery Time trr s VCC=9V, IF=1,A, Ls =nh Turn-on Loss per Pulse Eon J/P VCC=9V, Ic=1,A, Ls =nh Turn-off Loss per Pulse Eoff J/P RG(on/off)=2.7Ω/1Ω (2) Reverse Recovery Loss per Pulse Err J/P VGE= 15V, Short Circuit Pulse Width tsc s VCC=13V,Ls=nH RG(on/off)=2.7/1Ω,VGE= 15V,Tj=15 o C Stray Inductance Module LSCE nh Between C1(main) and E2(main) NTC-Thermistor Resistance R25 kω Tc=25 o C Deviation R/R % -5 5 Tc=25 o C B-constant B(25/5) K Between 25 o C and 5 o C Thermal Impedance IGBT Rth(j-c) K/W Junction to case FWD Rth(j-c) Contact Thermal Impedance Rth(c-f) K/W Case to fin (per 1 arm) Notes: (2) R G value is a test condition value for evaluation, not recommended value. Please determine the suitable R G value by measuring switching behavior and checking results with the respective SOA. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC values according to IEC IEC 677 9

2 IGBT MODULE Spec.No.IGBT-SP-163 R P 2 OUTLINE DRAWING Unit in mm Weight: 77(g)

3 Forward Current IF(A) VGE (V) Collector Current, IC(A) Collector Current, IC(A) IGBT MODULE Spec.No.IGBT-SP-163 R P 3 2 VGE=15V 13V Tvj =25 o C 2 VGE=15V 13V V 11V V 9V 2 7V Collector-Emitter Voltage, VCE(V) Collecter Current vs. Collector to Emitter Voltage 2 Tvj=15 Tvj= Collector-Emitter Voltage, VCE(V) Collecter Current vs. Collector to Emitter Voltage 15 1 Tvj =25 o C I C =1A 7V Forward Voltage VF(V) Forward Voltage of free-wheeling diode QG (uc) QG-VGE curve

4 Reverse Recovery Loss, Err (J/pulse) Switching time Ton, tr, tof, tf, trr (us) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) IGBT MODULE Spec.No.IGBT-SP-163 R P Ls=nH R G =2.7Ω/1Ω.8.7 Ls=nH R G =2.7Ω/1Ω 1..9 y = 1.75E-16x E-13x E-1x E-7x E-x E y = 1E-2x 6-2E-17x 5-1E-13x + E-1x 3-5E-7x 2 +.6x Collector Current, Ic (A) Turn-on Loss vs. Collector Current Collector Current, Ic (A) Turn-off Loss vs.collector Current.5.5 Ls=nH R G =2.7Ω/1Ω Ls=nH R G =2.7Ω/1Ω toff tf.1.5 y = 6E-11x 3-3E-7x 2 +.6x ton trr tr Forward Current, IF (A) Recovery Loss vs. Forward Current Collector Current Ic,I F (A) Switching time vs. Collector Current

5 Reverse Recovery Loss, Err (J/pulse) Switching time Ton, tr, tof, tf, trr (us) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) IGBT MODULE Spec.No.IGBT-SP-163 R P Ls=nH Ic=1A Ls=nH Ic=1A Gate Resistance, Rg (Ω) Turn-on Loss vs. Gate Resistance Gate Resistance, Rg (Ω) Turn-off Loss vs. Gate Resistance Ls=nH Ic=1A Ls=nH Ic=1A toff ton trr tf..3.5 tr Gate Resistance, Rg (Ω) Recovery Loss vs. Gate Resistance Gate Resistance Rg(Ω) Switching time vs. Gate Resistance

6 IR (A) IGBT MODULE Spec.No.IGBT-SP-163 R P 6 RBSOA 25 IC( to be turned off ) (A) Conditions: Vcc 12V, Ic 2A, R G(OFF) 1W, VGE=+-15V, Tj=15 o C, Ls nh, on pulse width 1us ( Vce spike voltage and Ls are defined at auxiliary terminal) VCE( spike Voltage ) IC( to be turned off ) Ic Vce t Definition of RBSOA waveform VCE( spike Voltage ) (V) (at auxiliary terminal) Reverse bias safe operation area ( RBSOA ) Reverse Recovery SOA 25 Conditions: Ls nh, Vcc 12V, IF 2A, di/dt 8A/us, Tj=15 o C 2 Pmax 1.2MW VR Irm.5Irm 15 t 1 -IR Δt( -.5Irm) VR(V) (at auxiliary terminal).5irm di/dt= Δt Definition of Recovery di/dt Reverse Recovery SOA

7 Cies, Coes, Cres (nf) Transient Thermal Impedance : Zth(j-c) (K/W) Thernmistor Resistance (kω) IGBT MODULE Spec.No.IGBT-SP-163 R P 7.1 Maximum 1 FWD IGBT Σ Zth[n]*(1-exp(-t/τth[n]) ) n Unit tth[n] 1.67E-1 1.2E E-3 1.3E- sec Zth[n,IGBT] 2.36E-2.7E E-3 1.3E- K/W Zth[n,Diode] 3.57E E-2.8E-3 1.6E- K/W Time : t(s) Transient Thermal Impedance Curve Tj=25 o C f=1khz Case Temperature, Tc ( ) Thermistor Resistornce vs. Temperature 1 Cies 1 Coes Cres Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage

8 IGBT MODULE Spec.No.IGBT-SP-163 R P 8 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff.. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address

Item Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current

Item Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current Spec.No.IGBT-SP-162 R1 P1 Silicon N-channel IGBT 33V F version FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity