MBN3600E17F Silicon N-channel IGBT 1700V F version

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1 Silicon N-channel IGBT 17V F version Spec.No.IGBT-SP-124 R P1 FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. Low driving power: Low input capacitance advanced trench gate. Low noise recovery: Ultra soft fast recovery diode. ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Item Symbol Unit Collector Emitter Voltage V CES V 1,7 Gate Emitter Voltage V GES V 2 Collector Current DC I C 3,6 A 1ms I Cp 7,2 Forward Current DC I F 3,6 A 1ms I FM 7,2 Junction Temperature T j op o C -4 ~ +15 Storage Temperature T stg o C -4 ~ +125 Isolation Voltage V ISO V RMS 4,(AC 1 minute) Screw Torque Terminals (M4/M8) - 2/15 (1) N m Mounting (M6) - 6 (2) Notes: (1) Recommended Value 1.8.2/ N m ELECTRICAL CHARACTERISTICS (2) Recommended Value 5.5.5N m Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES ma o C V CE=1,7V, V GE=V, Tj=25 o C CE=1,7V, GE=V, V V Tj=125 Gate Emitter Leakage Current I GES na V GE= 2V, V CE=V, Tj=25 o C Collector Emitter Saturation Voltage V CE(sat) V C C I C=3,6A, V GE=15V, Tj=125 o I C=3,6A, V GE=15V, Tj=15 o Gate Emitter Threshold Voltage V GE(TO) V V CE=1V, I C=36mA, Tj=25 C o Input Capacitance C ies nf V CE=1V, V GE=V, f=1khz, Tj=25 o C Internal Gate Resistance Rge V CE=1V, V GE=V, f=1khz, Tj=25 o C Rise Time t r TBD.95 TBD V CC=9V, Ic=3,6A Switching Times Turn On Time t on TBD 1.85 TBD Ls=55nH (3) s Fall Time t f TBD 1.1 TBD R G(on/off)=3.3/1.5 (3) Turn Off Time t off TBD 2.75 TBD V GE= 15V, Tj=125 o C Peak Forward Voltage Drop V FM V IF=3,6A, V GE=V, Tj=125 o C IF=3,6A, V GE=V, Tj=15 o C Reverse Recovery Time t rr s TBD.65 TBD E on(1%) J/P -.75 TBD 125 o C Turn On Loss E on(full) J/P o C V CC=9V, Ic=3,6A Turn Off Loss E off(1%) J/P TBD Ls=55nH (3) 125 o C R G(on/off)= 3.3/1.5 (3) E off(full) J/P o C V GE= 15V Reverse Recovery Loss E rr(1%) J/P -.85 TBD 125 o C E rr(full) J/P o C Stray inductance in module LSCE nh Thermal Impedance IGBT Rth(j-c) K/W Junction to case FWD Rth(j-c) Contact Thermal Impedance Rth(c-f) K/W Case to fin ( grease=1w/(m K), heat-sink flatness 5um) Notes:(3) Ls and R G are the test condition s values for evaluation of the switching times, not recommended value. Please, determine the suitable R G value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision.

2 Spec.No.IGBT-SP-124 R P2 DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Fig.1 Switching test circuit Vce tl VL Ic t Ls= VL dic ( dt ) t=tl Fig.2 Definition of Ls Vce 9% Ic 1% 1% 1% t Vge Vge 1% tr t 9% ton t3 t4 t1 t2 t5 t4 Eon(1%)= Ic Vce dt t3 Ic t7 tf toff 9% t8 t8 1% t6 Vce Eoff(1%)= Ic Vce dt t7 t t -Ic.1Vce Vce Irm.5Irm.1IF IF trr t9 t11 t12 t1 t12 Err(1%)= IF Vce dt t11 t t2 Eon(Full)= Ic Vce dt t1 t6 Eoff(Full)= Ic Vce dt t5 Err(Full)= IF Vce dt t1 t9 Fig.3 Definition of switching loss

3 Collector Current IC (A) Collector Current IC (A) CHARACTERISTICS CURVE Spec.No.IGBT-SP-124 R P3 STATIC CHARACTERISTICS 48 Tc=25 VGE=15V 13V 11V 48 VGE=15V 13V 11V V 24 9V V 7V Collector-Emitter Voltage VCE (V) Collector-Emitter Voltage VCE (V) Collector Current vs. Collector to Emitter Voltage Collector Current vs. Collector to Emitter Voltage

4 Collector Current IC (A) Forward Current IF (A) Spec.No.IGBT-SP-124 R P4 48 Tc=15 VGE=15V 13V 11V 48 Tc= V Tc=15 7V Collector-Emitter Voltage VCE (V) Forward Voltage VF (V) Collector Current vs. Collector to Emitter Voltage Forward Voltage of free-wheeling diode

5 Reverse Recovery Loss Err (J/pulse) Switching Time ton,tr,toff,tf,trr (μs)) Turn-on Loss Eon (J/pulse) Turn-off Loss Eoff (J/pulse) DYNAMIC CHARACTERISTICS Vcc=9V RG(on/off)=3.3/1.5Ω Eon(full) Tc= Vcc=9V RG(on/off)=3.3/1.5Ω Spec.No.IGBT-SP-124 R P5 Eoff(full) Tc=15 Eoff(1%).8 Eon(1%) 2. Eoff(full) Eon(full) Collector Current Ic (A) Turn-on Loss vs. Collector Current Collector Current Ic (A) Turn-off Loss vs. Collector Current Vcc=9V RG(on/off)=3.3/1.5Ω Err(full) Tc= Vcc=9V RG(on/off)=3.3/1.5Ω Err(full) Err(1%) toff Forward Current IF (A) Reverse Recovery Loss vs. Forward Current Collector Current Ic (A) Switching Time vs. Collector Current ton tf tr trr

6 Reverse Recovery Loss Err (J/pulse) Turn-on Loss Eon (J/pulse) Turn-off Loss Eoff (J/pulse) Spec.No.IGBT-SP-124 R P Vcc=9V Ic=36A Eon(full) Tc= Vcc=9V Ic=36A Eoff(full) Tc=15 Eoff(full) 1.5 Eon(full) 2.5 Eoff(1%) Eon(1%) Gate Resistance Rg (Ω) Turn-on Loss vs. Gate Resistance Gate Resistance Rg (Ω) Turn-off Loss vs. Gate Resistance Err(full) Tc=15 Vcc=9V IF=36A 1..8 Err(1%) Err(full) Gate Resistance Rg (Ω) Reverse Recovery Loss vs. Gate Resistance

7 Spec.No.IGBT-SP-124 R P7 Outline Drawing Unit in mm Weight: 13g Circuit Diagram

8 Thermal Impedance Zth(j-c) (K/W) Spec.No.IGBT-SP-124 R P8 TRANSIENT THERMAL IMPEDANCE.1.1 FWD IGBT Times t(s) Transient Thermal Impedance Curve (Maximum Value)

9 IF (A) IC( to be turned off ) (A) RBSOA Spec.No.IGBT-SP-124 R P Conditions: Vcc 11V, Ic 72A, Rg 1.5, VGE=+-15V, -4 o C Tj 15 o C, Ls 55nH, on pulse width 1us ( Vce spike voltage and Ls are defined at auxiliary terminal) VCE( spike Voltage ) IC( to be turned off ) Ic Definition of RBSOA waveform Vce t VCE( spike Voltage ) (V) (at auxiliary terminal) Reverse bias safe operation area ( RBSOA ) Recovery SOA Conditions:Vcc 11V, IF 72A, di/dt 12A/us 8 Ls 55nH, -4 o C Tj 15 o C 7 6 Pmax 2.9MW VAK (V) (at auxiliary terminal) Recovery SOA

10 VGE (V) Spec.No.IGBT-SP-124 R P1 Qg-Vg curve 15 Vcc=9V IC=36A Tc= QG (uc) QG-VGE curve Negative environmental impact material Please note the following negative environmental impact materials are contained in the product in order to keep product characteristic and reliability level. Material Lead (Pb) and its compounds Arsenic and its compounds Contained part Solder Si chip

11 Spec.No.IGBT-SP-124 R P11 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current

Item Symbol Unit MBL1600E17F Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V 20 Collector Current IGBT MODULE Spec.No.IGBT-SP-57 R P MBL6E7F Silicon N-channel IGBT 7V F version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through with Advanced trench HiGT* (*High