Item Symbol Unit MBN1800FH33F Collector Emitter Voltage V CES V 3,300 Gate Emitter Voltage V GES V 20 Collector Current

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1 MBN8FH33F Spec.No.IGBT-SP-62 R P Silicon N-channel IGBT 33V F version FATURS Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT. Low driving power due to low input capacitance with trench MOS gate. Low noise recovery: Ultra soft fast recovery diode. High Current rate Package. Low Rth(j-c) & low stray inductance. RoHS ABSOLUT MAXIMUM RATINGS (Tc=2 o C) Item Symbol Unit MBN8FH33F Collector mitter Voltage V CS V 3,3 Gate mitter Voltage V GS V 2 Collector Current DC I C,8 A ms I CRM 3,6 Forward Current DC I F,8 A ms I FRM 3,6 Junction Temperature T j o C - ~ + Storage Temperature T stg o C - ~ + Isolation Voltage V ISO V RMS,2(AC minute) Screw Torque Terminals (M4/M8) - 2/ () N m Mounting (M6) - 6 (2) Notes: () Recommended Value.8.2/9 N m LCTRICAL CHARACTRISTICS (2) Recommended Value..N m Item Symbol Unit Min. Typ. Max. Test Conditions Collector mitter Cut-Off Current I CS ma o C V C=3,3V, V G=V, Tj=2 o C V C=3,3V, V G=V, Tj= Gate mitter Leakage Current I GS na V G= 2V, V C=V, Tj=2 o C Collector mitter Saturation Voltage V Csat V I C=8A, V G=V, Tj= o C Gate mitter Threshold Voltage V G(th) V V C=V, I C=8mA, Tj=2 o C Input Capacitance C ies nf V C=V, V G=V, f=khz, Tj=2 o C Internal Gate Resistance r g Ω V C=V, V G=V, f=khz, Tj=2 o C Rise Time t r V CC=,8V, Ic=8A Switching Times Turn On Time t on -. - Ls=nH s Fall Time t f R G(on/off)=4.7Ω/.6Ω (3) Turn Off Time t off V G= V, Tj= o C Peak Forward Voltage Drop V F V IF=8A, V G=V, Tj= o C Reverse Recovery Time t rr s V CC=,8V, IF=8A, Ls =nh Tj= o C Turn On Loss on J/P V CC=,8V, Ic=8A, Ls =nh Turn Off Loss off J/P Reverse Recovery Loss rr J/P Stray inductance module L SC nh R G(on/off)=4.7Ω/.6Ω (3) V G= V, Tj= o C Thermal Impedance IGBT Rth(j-c) K/W Junction to case FWD Rth(j-c) Contact Thermal Impedance Rth(c-f) K/W -. - Case to fin I 2 t value I 2 t ka 2 s - - T j, start= o C, ms, V R=V, half-sinewave Notes: (3) R G value is a test condition value for evaluation, not recommended value. Please, determine the suitable R G value by measuring switching behaviors. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * LCTRICAL CHARACTRISTIC values according to IC IC

2 Forward Curent, IF (A) MBN8FH33F Spec.No.IGBT-SP-62 R P2 STATIC CHARACTRISTICS 36 Tj=2 o C VG=V 3V 36 VG=V 3V 3 3 V V V 2 9V 6 6 7V Collector to mitter Voltage, VC(V) Collector Current vs.collector to mitter Voltage 7V Collector to mitter Voltage, VC(V) Collector Current vs.collector to mitter Voltage 36 Tj= o C VG=V 3V 36 VG=V 3 3 Tj=2 o C Tj= o C 24 V V V Collector to mitter Voltage, VC(V) Collector Current vs.collector to mitter Voltage Forward Voltage, VF(V) Forward Voltage of free-wheeling diode

3 Reverse Recovery Loss, rr (J/pulse) Turn-on Loss, on (J/pulse) Turn-off Loss, off (J/pulse) MBN8FH33F Spec.No.IGBT-SP-62 R P3 DYNAMIC CHARACTRISTICS 9 8 Vcc=8V RG(on)=4.7Ω VG=±V Ls=nH Inductive Load 9 8 Vcc=8V RG(off)=.6Ω VG=±V Ls=nH Inductive Load Tj= o C Tj= o C ,2,8 2,4 3, 3,6 Turn-on Loss vs.collector Current 6,2,8 2,4 3, 3,6 Turn-off Loss vs.collector Current 4 Vcc=8V RG(on)=4.7Ω VG=±V Ls=nH Inductive Load 3 Tj= o C 2 6,2,8 2,4 3, 3,6 Collector Current, IF (-Ic) (A) Recovery Loss vs.collector Current

4 Collector Current, IC (A) IR (A) Cies, Coes, Cres (nf) VG (V) MBN8FH33F Capacitance vs. Collector to mitter Voltage Tj=2 o C f=khz QG-VG CURV Spec.No.IGBT-SP-62 R P4 Conditions:Ls=8nH, VCC=8V, Ls=nH, VCC=8V, IC=8A,VG=+/-V, Tj=2 o C Cies Coes - Cres Collector to mitter Voltage, VC (V) Capacitance vs. Collector to mitter Voltage QG ( C) QG-VG curve Safe Operating Area Vcc 22V, IF 36A, di/dt ka/us, - o C Tj o C, Ls nh, on pulse width us 2 2 Pmax=3.6MW 2 IC( to be turned off ) VC( spike Voltage ) Ic Vce 2 Definition of RBSOA waveform t Vcc 22V, IC 36A, RG.6W, VG=±V, - o C Tj o C, Ls nh on pulse width s Collector to mitter Voltage, VC (V) *Defined as auxiliary terminal VR (V) (Measured at auxiliary terminal) *Defined as auxiliary terminal Reverse bias safe operation area(rbsoa) Reverse recovery safe operation area(rrsoa)

5 Transient thermal impedance : Zth(j-c) (K/W) MBN8FH33F TRANSINT THRMAL IMPDANC. Maximum Spec.No.IGBT-SP-62 R P. FWD IGBT..... Curve approximation model Time : t(s) Transient Thermal Impedance Curve ( Zth[n]*(-exp(-t/ th[n]))) n Unit th[n] sec Zth[n,IGBT] K/W Zth[n,Diode] K/W

6 MBN8FH33F Spec.No.IGBT-SP-62 R P6 OUTLIN DRAWINGS Unit in mm 6 8 Weight : (g) Fig. Outline Drawings C C C C G Fig.2 Circuit diagram

7 MBN8FH33F Spec.No.IGBT-SP-62 R P7 HITACHI POWR SMICONDUCTORS Notices. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets.. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address

MBN1800F33F Silicon N-channel IGBT 3300V F version

MBN1800F33F Silicon N-channel IGBT 3300V F version Silicon N-channel IGBT V F version Spec.No.IGBT-SP-8 R8 P FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity