SG200-12CS2 200A1200V IGBT Module

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1 Typical applications: AC and DC electric motor control Frequency transformer UPS Industry power supply Electric welding machine Characteristics: SPT chip (soft-punch-through) MOS input control Ultra thin IGBT chip, great current, low loss, low tail current Low VCE (sat) saturated voltage, positive temperature coefficient at high temperature High switch frequency, low switch loss High SC resistive ability Module creepage long distance design DBC insulated voltage above 2,500V RMS SG200-12CS2 200A1200V IGBT Module Absolute Max. Ratings Tc=25 unless specified Name symbol condition value unit IGBT Collector-emitter voltage VCES 1200 V Collector current IC Tc= A Collector repetitive peak current ICRM Tc=25 80 tp=1ms A Gate-emitter peak voltage VGES ±20 V Junction temperature Tvj Storage temperature Tstg Isolation voltage VISOL RMS 1min 50Hz 2500 V Reverse diode Forward DC current IF Tc= A Forward repetitive peak current IFRM Tc=25 80 tp=1ms A Forward inrush current IFSM tp=10ms sin Tj= A Characteristics Tc=25 unless specified

2 Name Symbol Condition Value Min. Typical Max. Unit IGBT Gate-emitter threshold voltage VGE th VGE=VCE Ic=4mA Tj= V Collector-emitter cut-off current ICES VGE=0V VCE=VCES m A Gate-emitter leakage VGE=0V VGE=±20V IGES current Tj= na On-state slope resistance rce VGE=15V Tj= m Collector-emitter VCE IC=200A VGE=15V chip saturation voltage SAT parameters V Input capacitance Cies 17 nf Output capacitance Coes VGE=0 VCE=25V f=1mhz 2 n F Reverse transfer capacitance Cres 2 nf Parasitic collector-emitter LCE 20 n H inductance Turn-on delay time td on VCC=600V IC=200A 170 ns Rise time tr Rgon=Rgoff=5 55 ns Turn-off delay time td off Tj=125 VGE=±15V 660 ns Fall time tf 60 ns Energy dissipation Eon during turn-on time 18 mj Energy dissipation Eoff during turn-off time Reverse diode Forward voltage VF IF=200A VGE=0V Tj= V Peak reverse IRRM IF=180A VGE=0 180 A recovery current -dif/dt=1800a/ s Tj=125 Reverse recovery trr VR=600V 200 ns time Thermal characteristics 2

3 IGBT thermal Rth(j-c) per IGBT 0.09 K/W resistance junction to case Rth(j-c)D per reverse diode 0.15 K/W Module thermal resistance case to heatsink Rth(c-s) per module 0.03 K/W Mechanical characteristics Mounting torque M1 M6 3 6 NM Ends juncture torque M2 M NM Weight MAX 324 g Color White Dimensions MAX mm

4 Fig. 1 Typ. output characteristic, inclusive R CC'+ EE' Fig. 2 Rated current vs. temperature I C = f (T C) Fig. 3 Typ. turn-on /-off energy = f (I C) Fig. 4 Typ. turn-on /-off energy = f (R G) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic

5 Fig. 7 Typ. switching times vs. I C Fig. 8 Typ. switching times vs. gate resistor R G Fig. 9 Transient thermal impedance of IGBT Z thp(j-c) = f (t p); D = t p/t c = t p*f Fig. 10 Transient thermal impedance of forward Z thp(j-c) = f (t p); D = t p/t c = t p*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current

6 Fig. 13 Typ. CAL diode recovered charge Dimension and Circuit configuration Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC , Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.

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