Item Symbol Unit MSM600FS33ALT Drain Source Voltage VDSS V 3,300 Gate Source Voltage VGSS V +20/-15 Drain Current. 600 A 1ms IDM 1,200 Source Current
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1 SiC MODULE SiC MOSFET 3300V Spec.No.IGBT-SP-18021R0 P 1 FEATURES Ultra low switching loss with SiC MOSFET High current density package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable large current easily handled by paralleling Equipped with current sensing terminals ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Item Symbol Unit Drain Source Voltage VDSS V 3,300 Gate Source Voltage VGSS V +20/-15 Drain Current DC ID 600 A 1ms IDM 1,200 Source Current DC IS 600 A 1ms ISM 1,200 Junction Temperature Tvj op o C -50 ~ +150 Storage Temperature Tstg o C -55 ~ +150 Isolation Voltage VISO VRMS 6,000(AC 1 minute) Screw Torque Terminals (M3/M8) M 0.8/15 N m Mounting (M6) M 6.0 (1) Notes: (1) Recommended Value N m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions Drain Source Cut-Off Current I DSS ma VDS=3,300V, VGS=0V, Tvj =25 o C VDS=3,300V, VGS=0V, Tvj =150 o C Gate Source Leakage Current IGSS na VGS=+20V, VDS=0V, Tvj =25 o C -100 VGS=-15V, VDS=0V, Tvj =25 o C Drain Source on-state Voltage VDS(on) V ID=600A, VGS=15V, Tvj =25 o C TBD 3.6 TBD ID=600A, VGS=15V, Tvj =150 o C Gate Source Threshold Voltage VGS(th) V TBD 3.0 TBD VDS=10V, ID=600mA, Tvj =25 o C Input Capacitance Ciss nf VDS=10V, VGS=0V, f=100khz, Tvj =25 o C Internal Gate Resistance Rg(int) Ω VDS=10V, VGS=0V, f=100khz, Tvj =25 o C Switching Times Rise Time tr VDD=1,800V, ID=600A Turn On Delay Time td(on) Ls=40nH s Fall Time tf RG(on/off)= 1.5/2.2Ω (2) Turn Off Delay Time td(off) VGS=+15/-10V, Tvj =150 o C Source Drain Voltage VSD V Is=600A, VGS=+15V, Tvj =25 o C TBD 3.3 TBD Is=600A, VGS=+15V, Tvj =150 o C Is=600A, VGS=-10V, Tvj =25 o C TBD 6.7 TBD Is=600A, VGS=-10V, Tvj =150 o C Reverse Recovery Time trr s VDD=1,800V, IS=600A, Ls =40nH Tvj =150 o C,RG(on/off)=1.5/2.2Ω Turn-on Loss per Pulse Eon J/P VDD=1,800V, ID=600A, Ls =40nH Turn-off Loss per Pulse Eoff J/P RG(on/off)=1.5/2.2Ω (2) Reverse Recovery Loss per Pulse Err J/P VGS=+15/-10V, Tvj =150 o C Stray Inductance Module LSCE nh Between D1(main) and S2(main) NTC-Thermis Resistance R25 kω Tc=25 o C tor Deviation R/R % -5-5 Tc=25 o C Thermal MOSFET Rth(j-c) - - K/W Impedance Junction to case Contact Thermal Impedance Rth(c-f) K/W Case to fin (per 1 arm) Notes: (2) R G value is a test condition value for evaluation, not recommended value. Please, determine the suitable R G value by measuring switching behavior and checking results with the respective SOA. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC items shown in above table are according to IEC and IEC
2 SiC MODULE Spec.No.IGBT-SP-18021R0 P 2 OUTLINE DRAWING(unit in mm) 1 : D1 2 : D2S1 3 : S2 4 : D1AUX 5 : G1 6 : S1AUX 7 : G2 8 : S2AUX 9 : T 10 : D2AUX 11 : S2main Weight: 770(g) Terminal Number Circuit Diagram
3 SiC MODULE Spec.No.IGBT-SP-18021R0 P 3
4 SiC MODULE Spec.No.IGBT-SP-18021R0 P 4
5 SiC MODULE Spec.No.IGBT-SP-18021R0 P 5
6 SiC MODULE Spec.No.IGBT-SP-18021R0 P 6 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address
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D AB Z DETAIL "B" DETAIL "A"
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AM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high
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TO-220F(SLS) Description Symbol Characteristics Unit Remarks
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Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFH18N60M2 18N60M2 TO-220FP wide creepage Tube
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International В Rectifier IRFZ44
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Complementary MOSFET
General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)
SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25
P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S
CONFIDENTIAL TENTATIVE Spec. =UNCONTROLLED=
SiC Power Module BSM8DPC / < Specifications (Precautions and Prohibitions) > Precaution for Mounting / Circuit board design ) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package. Features. Description.
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH10N60M2 650 V 0.60 Ω 7.5 A
SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC7ESN Single N-Channel MOSFET DESCRIPTION SMC7E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V
% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration
2SK3815 2SK3815. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN8 SK81 SK81 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
AM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)
TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Continuous
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Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms TC=100 C 7200
1MBI36VD-12P IGBT MODULE (V series) 36V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
1.2V Drive Nch MOSFET
.2V Drive Nch MOSFET RUM002N02 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) VMT3 Applications Switching Features (2)Souce (3)Drain ) Fast switching speed. 2) Low voltage drive (.2V) makes
VDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 63. Qrr (nc) typ 136. * Dynamic R(on)
600V Cascode GaN FET in TO-247 (source tab) Not recommended for new designs see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer
SiC Power Module. Datasheet BSM120D12P2C005. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.
SiC Power Module BSMDPC Datasheet Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 9(N.C) 3, Features ) Low surge, low switching
I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V
IGBT MODULE (V series) V / 9A / 1 in one package Features High speed switching Voltage drive Low Inductance module sucture Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible
VDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 60. Qrr (nc) typ 136. Qg (nc) typ 28. * Dynamic RDS(on)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
Features. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF140N6F7 60 V 0.0035 Ω 70 A 33 W Among the
Features. Table 1: Device summary Order code Marking Package Packing STW75NF30 75NF30 TO-247 Tube
N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
SMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS
SMCSN Single N-Channel MOSFET DESCRIPTION SMC is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
Prerelease Product(s) - Prerelease Product(s)
N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
TO-220F (SLS) Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V
FMV4N6S Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant Applications For switching Outline Drawings [mm] TO-22F (SLS) Equivalent circuit schematic
20V P-Channel Enhancement-Mode MOSFET
1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V. Icp 1ms 2400
1MBI12VC-12P IGBT MODULE (V series) 12V / 12A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
Features. Description. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mω (typ., TJ=150 C) in an HiP247 package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction
SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25
SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10
SCH1436. Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel
Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and ultra
Silicon Carbide N-Channel Power MOSFET
MSC080SMA120B Datasheet Silicon Carbide N-Channel Power MOSFET Advanced Technical Information (ATI) June 2018 Contents 1 Revision History... 1 1.1 ATI... 1 2 Product Overview... 2 2.1 Features... 2 2.2
Features. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
Features. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.200 Ω 18 A TO-220FP Fast-recovery body
Automotive P-channel -40 V, Ω typ., -57 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive P-channel -40 V, 0.0115 Ω typ., -57 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - preliminary data Features Order codes VDS RDS(on)max. ID -40 V 0.014 Ω -57 Figure 1: Internal
Items Symbols Conditions Maximum ratings Units Collector-Emitter voltage VCES 1700 V Gate-Emitter voltage VGES ±20 V
1MBI16VR-17E IGBT MODULE (V series) 17V / 16A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
TPH3212PS. 650V Cascode GaN FET in TO-220 (source tab)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
2.5V Drive Nch+Pch MOSFET
.V Drive Nch+Pch MOSFET EM6M EM6M Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions (Unit : mm) EMT6 Features ) Nch MOSFET and Pch MOSFET are put in EMT6 package. ) High-speed switching.
N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage
N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S
DATA SHEET SWITCHING P-CHANNEL POWER MOS FET
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION
TO-3P(Q) Description Symbol Characteristics Unit Remarks. Ta=25 C W 315 Tc=25 C Operating and Storage Tch 150 C Temperature range Tstg -55 to C
Super FAP-E 3 series N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing
TO-247. Parameter Symbol Characteristics Unit Remarks VDS 600 V VDSX 600 V VGS=-30V
FMW47N6SFDHF Super J-MOS series N-Channel enhancement mode power MOSFET Features Pb-free lead terminal RoHS compliant uses Halogen-free molding compound Applications For switching Outline Drawings [mm]
VDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
Features. Description. AM15810v1. Table 1: Device summary Order code Marking Package Packing STL8N6F7 8N6F7 PowerFLAT 3.3x3.
N-channel 60 V, 0.019 Ω typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL8N6F7 60 V 0.023 Ω 8 A 1 2 3 4 Among the
STP5N105K5. N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package. Features. Applications. Description
STP5N05K5 N-channel 050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP5N05K5 050 V 3.5 Ω 3 A 85 W Worldwide best
SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET
BZT52C2V4 - BZT52C43 ZENER DIODES
BZT52C2V4 - BZT52C43 ZENER DIODES Features: Planar Die Construction 350mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes Available in Lead
VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10.
Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored
SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25
N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS RDS(on) max ID STL210N4F7AG 40 V 1.6 mω 120
SiC Power Module BSM180D12P2C101. Datasheet. Application Motor drive. Circuit diagram. Inverter, Converter. Photovoltaics, wind power generation.
SiC Power Module BSMDPC Datasheet Application Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Circuit diagram 9 (N.C) 3, Features ) Low surge, low switching
CPH6443. Power MOSFET 35V, 37mΩ, 6A, Single N-Channel
Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low on resistance. This
SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.