Silicon Carbide N-Channel Power MOSFET
|
|
|
- Ernest Singleton
- 5 years ago
- Views:
Transcription
1 MSC080SMA120B Datasheet Silicon Carbide N-Channel Power MOSFET Advanced Technical Information (ATI) June 2018
2 Contents 1 Revision History ATI Product Overview Features Benefits Applications Electrical Specifications Absolute Maximum Ratings Static Characteristics Dynamic Characteristics Body Diode Characteristics Package Specification Package Outline Drawing... 7 MSC080SMA120B Datasheet Revision ATI
3 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 ATI This version of the document provides advanced technical information (ATI) available prior to the production release. MSC080SMA120B Datasheet Revision ATI 1
4 2 Product Overview This section shows the product overview for the MSC080SMA120B device. 2.1 Features The following are key features of the MSC080SMA120B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, T J(max) = 175 C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 2.2 Benefits The following are benefits of the MSC080SMA120B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external freewheeling diode Lower system cost of ownership 2.3 Applications The MSC080SMA120B device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution MSC080SMA120B Datasheet Revision ATI 2
5 3 Electrical Specifications This section shows the electrical specifications for the MSC080SMA120B device. 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC080SMA120B device. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain source voltage 1200 V ID Continuous drain current at T C = 25 C 30 A Continuous drain current at T C = 100 C 22 IDM Pulsed drain current 1 75 VGS Gate-source voltage 25 to 10 V PD Total power dissipation at T C = 25 C 165 W Linear derating factor 1.11 W/ C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC080SMA120B device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RθJC Junction-to-case thermal resistance C/W TJ Operating junction temperature C Tstg Storage temperature TL Soldering temperature for 10 seconds (1.6 mm from case) 260 Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m WT Package weight 0.22 oz 6.2 g MSC080SMA120B Datasheet Revision ATI 3
6 3.2 Static Characteristics The following table shows the static characteristics for the MSC080SMA120B device. T J = 25 C unless otherwise specified. Table 3 Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V(BR) DSS Drain-source breakdown voltage V GS = 0 V I D = 100 µa RDS(on) Drain-source on resistance 1 V GS = 20 V I D = 15 A VGS(th) Gate-source threshold voltage V GS = VDS I D = 1 ma ΔV GS(th) /ΔTJ Threshold voltage coefficient V GS = VDS I D = 1 ma IDSS Zero gate voltage drain current V DS = 1200 V T J = 25 C V GS = 0 V V DS = 1200 V T J = 125 C V GS = 0 V 1200 V mω V TBD mv/ C 100 µa IGSS Gate-source leakage current V GS = 20 V / 10 V ±100 na 500 Note: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. MSC080SMA120B Datasheet Revision ATI 4
7 3.3 Dynamic Characteristics The following table shows the dynamic characteristics for the MSC080SMA120B device. T J = 25 C unless otherwise specified. Table 4 Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input capacitance V GS = 0 V Crss Reverse transfer capacitance V DD = 1000 V V AC = 25 mv ƒ = 1 MHz Coss Output capacitance pf Qg Total gate charge V GS = 5 V/20 V 64 nc Qgs Gate-source charge V DD = 800 V I D = 15 A 12 Qgd Gate-drain charge 19 td(on) Turn-on delay time V DD = 800 V 5 ns tr Current rise time V GS = 0 V/20 V I D = 15 A 4 td(off) Turn-off delay time R G (ext) = 2.3 Ω 1 21 tf Current fall time T C = 25 C 15 Eon2 Turn-on switching energy 2 Freewheeling diode = MSC010SDA120B 363 µj Eoff Turn-off switching energy 136 td(on) Turn-on delay time V DD = 800 V 4 ns tr Current rise time V GS = 0 V/20 V I D = 15 A 4 td(off) Turn-off delay time R G (ext) = 2.3 Ω 1 24 tf Current fall time T C = 150 C 19 Eon2 Turn-on switching energy 2 Freewheeling diode = MSC010SDA120B 358 µj Eoff Turn-off switching energy ESR SCWT EAS Notes: Equivalent series resistance Short circuit withstand time Avalanche energy, single pulse f = 1 MHz, 25 mv, drain short 1.9 Ω V DS = 960 V, V GS = 20 V, T C = 25 C 3 µs V DS = 150 V, V GS = 20 V, I D = 15 A, T C = 25 C 1000 mj R G is total gate resistance excluding internal gate driver impedance. E on2 includes energy of MSC010SDA120B freewheeling diode. MSC080SMA120B Datasheet Revision ATI 5
8 3.4 Body Diode Characteristics The following table shows the body diode characteristics for the MSC080SMA120B device. Table 5 Body Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit VSD Diode forward voltage I SD = 15 A T J = 25 C V GS = 0 V VSD Diode forward voltage I SD = 15 A T J = 25 C V GS = 5 V 4.0 V 4.2 V trr Reverse recovery time I SD = 15 A 34 ns Qrr Reverse recovery charge T J = 25 C V GS = 5 V 200 nc Irrm Reverse recovery current V DD = 800 V dl/dt = 1000 A/µs 6.5 A MSC080SMA120B Datasheet Revision ATI 6
9 4 Package Specification This section shows the package specification for the MSC080SMA120B device. 4.1 Package Outline Drawing This section shows the TO-247 package drawing for the MSC080SMA120B device. The dimensions in the figure below are in millimeters and (inches). Figure 1 Package Outline Drawing MSC080SMA120B Datasheet Revision ATI 7
10 Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA USA Within the USA: +1 (800) Outside the USA: +1 (949) Fax: +1 (949) Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at MSC080SMA120B Datasheet Revision ATI 8
APT80SM120B 1200V, 80A, 40mΩ
V, A, mω Package Silicon Carbide N-Channel Power MOSFET TO-247 DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT
APT80SM120J 1200V, 56A, 40mΩ Package APT80SM120J
APT8SM12J 12V, 56A, 4mΩ Package APT8SM12J PRELIMINARY Silicon Carbide N-Channel Power MOSFET DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon
Very Low Stray Inductance Phase Leg SiC MOSFET Power Module
MSCMC120AM03CT6LIAG Datasheet Very Low Stray Inductance Phase Leg SiC MOSFET Power Module Final May 2018 Contents 1 Revision History... 1 1.1 Revision A... 1 2 Product Overview... 2 2.1 Features... 2 2.2
Ultrafast Soft Recovery Rectifier Diode
APT30DQ60BG Datasheet Ultrafast Soft Recovery Rectifier Diode Final March 2018 Contents 1 Revision History... 1 1.1 Revision E... 1 1.2 Revision D... 1 1.3 Revision C... 1 1.4 Revision B... 1 1.5 Revision
1011GN-1200V 1200 Watts 50 Volts 32us, 2% L-Band Avionics 1030/1090 MHz
GENERAL DESCRIPTION The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 db gain, 1200 Watts of pulsed RF output power at 32us,
1011GN-1600VG 1600 Watts 50/52 Volts 32us, 2% L-Band Avionics 1030/1090 MHz
GENERAL DESCRIPTION The 1030/1090MHz, 50V or 52V 1011GN-1600VG is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of providing greater than 1600 Watts of pulsed output
0912GN-50LE/LEL/LEP 50 Watts 50 Volts 32us, 2% & MIDS MHz
E Class Earless Driver GaN Transistor Key Features 960-1215MHz 50W Pulsed Output Power 32µS-2% and MIDS Pulsing Common Source Class AB 50V Bias Voltage >60% Efficiency Across the Frequency Band under MIDS
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package. Features. Order code. Description. AM01475v1_Tab
N-channel 30 V, 2.15 mω typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP200N3LL 30 V 2.4 mω 120 A 176.5 W Very low on-resistance
LX V Octal Series Diode Pairs Array with Redundancy. Description. Features. Applications
LX0 V Octal Series Diode Pairs Array with Redundancy Description The LX0 is a diode array that features high breakdown voltage diodes with ESD protection and built-in redundancy. The array contains series
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 1.3 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS RDS(on) max ID STL210N4F7AG 40 V 1.6 mω 120
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 40 V, 2.9 mω typ., 55 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL120N4F6AG 40 V 3.6 mω 55 A
5 - Volt Fixed Voltage Regulators
SG09 5 - Volt Fixed Voltage Regulators Description The SG09 is a self-contained 5V regulator designed to provide local regulation at currents up to A for digital logic cards. This device is available in
TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially
Quantum SA.45s CSAC Chip Scale Atomic Clock
Quantum SA.45s CSAC Chip Scale Atomic Clock Microsemi invented portable atomic timekeeping with QUANTUM TM, the world s first family of miniature and chip scale atomic clocks. Choose QUANTUM TM class for
Silicon Carbide Semiconductor Products
Power Matters Silicon Carbide Semiconductor Products Low Switching Losses Low Gate Resistance High Power Density High Thermal Conductivity High Avalanche (UIS) Rating Reduced Heat Sink Requirements High
Features. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V DS @ T Jmax. R DS(on)max. I D STW48N60M2-4 650 V 0.07 Ω 42 A Excellent switching
P-channel -30 V, 0.01 Ω typ., A, STripFET H6 Power MOSFET in an SO-8 package. Features. Description
P-channel -30 V, 0.01 Ω typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package Datasheet - production data Features Order code VDS RDS(on) max ID STS10P3LLH6-30 V 0.012 Ω -12.5 A Very low on-resistance
PKP3105. P-Ch 30V Fast Switching MOSFETs
Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin
Features. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube
N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
Features. Description. Table 1: Device summary. Order code Marking Package Packaging SCT30N120 SCT30N120 HiP247 Tube
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mω (typ., TJ = 150 C) in an HiP247 package Datasheet - production data Figure 1: Internal schematic diagram G(1) D(2, TAB) S(3) AM01475v1_noZen Features Very
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STWA48N60DM2 48N60DM2 TO-247 long leads Tube
N-channel 600 V, 0.065 Ω typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max. ID STWA48N60DM2 600 V 0.079 Ω 40 A Fast-recovery
N-channel 600 V, Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features STW42N60M2-EP.
N-channel 600 V, 0.076 Ω typ., 34 A MDmesh M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB TAB Order code VDS @ TJmax RDS(on) max. ID STB42N60M2-EP D²PAK
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube
N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching
Features. Description. Table 1: Device summary Order code Marking Package Packing STF23N80K5 23N80K5 TO-220FP Tube
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF23N80K5 800 V 0.28 Ω 16 A 35 W TO-220FP Figure
Features. Description. Table 1: Device summary Order code Marking Package Packing STF5N60M2 5N60M2 TO-220FP Tube
N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
Features. Description. Table 1: Device summary Order code Marking Package Packing STW56N65DM2 56N65DM2 TO-247 Tube
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW56N65DM2 650 V 0.065 Ω 48 A 360 W TO-247 1 3
Features. Description. Table 1: Device summary Order code Marking Package Packing STL140N6F7 140N6F7 PowerFLAT 5x6 Tape and reel
N-channel 60 V, 2.4 mω typ., 140 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL140N6F7 60 V 2.8 mω 140 A 125 W Among
Features. Description. Table 1: Device summary Order code Marking Package Packing STL10N65M2 10N65M2 PowerFLAT 5x6 HV Tape and reel
N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDS RDS(on) max. ID STL10N65M2 650 V 1.00 Ω 4.5 A 1 2 3 4 PowerFLAT
Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
Features. Description. Table 1: Device summary Order code Marking Package Packing STP5N80K5 5N80K5 TO-220 Tube
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP5N80K5 800 V 1.75 Ω 4 A Industry s lowest RDS(on) x area
Features. Description. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel
P-channel 20 V, 0.087 Ω typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDS RDS(on) max ID STT3P2UH7 20 V 0.1 Ω @ 4.5 3 A SOT23-6L Very low on-resistance
Features. Description. Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel
P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code VDS RDS(on) max ID STR1P2UH7 20 V 0.1 Ω @ 4.5 1.4 A Very low on-resistance
Features. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.200 Ω 18 A TO-220FP Fast-recovery body
Features. Description. Table 1: Device summary Order code Marking Package Packing STW70N60DM2 70N60DM2 TO-247 Tube
N-channel 600 V, 0.037 Ω typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW70N60DM2 600 V 0.042 Ω 66 A 446 W TO-247 1 3
Features. Table 1: Device summary Order code Marking Package Packing STW75NF30 75NF30 TO-247 Tube
N-channel 300 V, 35 mω typ., 60 A STripFET II Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STW75NF30 300 V 45 mω 60 A 320 W TO-247 1 2 3 Exceptional
Automotive-grade N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive-grade N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS RDS(on) max ID STL225N6F7AG 60 V 1.4 mω 120
Quantum SA.45s CSAC Chip Scale Atomic Clock
Quantum SA.45s CSAC Chip Scale Atomic Clock Microsemi invented portable atomic timekeeping with QUANTUM TM, the world s first family of miniature and chip scale atomic clocks. Choose QUANTUM TM class for
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID STFU13N65M2 650 V 0.43 Ω 10A 1 2 3
MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier
MMA051PP45 Datasheet DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of
Features. Description. Table 1: Device summary Order code Marking Package Packaging STW45NM50 W45NM50 TO-247 Tube
N-channel 500 V, 0.08 Ω typ., 45 A MDmesh Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max ID 500 V 0.1 Ω 45 A TO-247 1 3 2 100% avalanche tested High dv/dt
Prerelease Product(s) - Prerelease Product(s)
N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
Prerelease Product(s) - Prerelease Product(s)
Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mω (typ., TJ=150 C), in an HiP247 package HiP247 Figure 1: Internal schematic diagram 1 2 3 Features Datasheet - preliminary data Designed for automotive
N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package. Features
N-channel 650 V, 1.6 Ω typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package Datasheet - production data Features 1 2 3 4 Order code VDS RDS(on) max. ID STL3N65M2 650 V 1.8 Ω 2.3 A 8 7 6
I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low
Features. Description. Table 1: Device summary Order code Marking Package Packing STD20NF06LAG D20N6LF6 DPAK Tape and Reel
Automotive-grade N-channel 60 V, 32 mω typ., 24 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD20NF06LAG 60 V 40 mω 24 A 60 W AEC-Q101
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID 650 V 0.38 Ω 11 A Figure 1:
Automotive-grade N-channel 950 V, Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package. Features. Description.
Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW22N95K5 950 V 0.330 Ω 17.5
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF4N90K5 4N90K5 TO-220FP Tube
N-channel 900 V, 1.90 Ω typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID STF4N90K5 900 V 2.10 Ω 4 A TO-220FP Figure 1: Internal
Features. Description. AM01476v1. Table 1: Device summary Order code Marking Package Packaging STWA40N95K5 40N95K5 TO-247 Tube
STWA40N95K5 N-channel 950 V, 0.110 Ω typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STWA40N95K5 950 V 0.130 Ω 38
Features. Order code. Description. Table 1: Device summary Order code Marking Package Packing STL28N60DM2 28N60DM2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.155 Ω typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features 4 5 3 2 1 PowerFLAT 8x8 HV Figure 1: Internal schematic diagram Order code
STP3LN80K5, STU3LN80K5
N-channel 800 V, 2.75 Ω typ., 2 A MDmesh K5 Power MOSFET in TO-220 and IPAK packages Datasheet - production data TAB Features Order code V DS RDS(on) max ID TAB IPAK 3 2 1 TO-220 1 2 3 STP3LN80K5 800 V
n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
Features. Description. Table 1: Device summary Order code Marking Package Packing STD30NF06LAG D30NF06L DPAK Tape and reel
Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD30NF06LAG 60 V 0.028 Ω 35 A AEC-Q101
Features. Description. Table 1: Device summary Order code Marking Package Packing STB20N90K5 20N90K5 D²PAK Tape and reel
N-channel 900 V, 0.21 Ω typ., 20 A MDmesh K5 Power MOSFET in a D²PAK package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STB20N90K5 900 V 0.25 Ω 20 A 2 3 1 D²PAK Industry s
Features. Description. Table 1: Device summary Order code Marking Package Packing STN3NF06L 3NF06L SOT-223 Tape and reel
N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package Datasheet - production data Features Order code VDS RDS(on) max. ID STN3NF06L 60 V 0.1 Ω 4 A Exceptional dv/dt capability
Features. Description. Table 1: Device summary Order code Marking Package Packing STF140N6F7 140N6F7 TO-220FP Tube
N-channel 60 V, 0.0031 Ω typ., 70 A STripFET F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF140N6F7 60 V 0.0035 Ω 70 A 33 W Among the
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10
Automotive-grade N-channel 400 V, Ω typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package. Features. Description. Table 1: Device summary
Automotive-grade N-channel 400 V, 0.063 Ω typ., 38 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP45N40DM2AG 400 V 0.072 Ω 38
500mA Negative Adjustable Regulator
/SG137 500mA Negative Adjustable Regulator Description The family of negative adjustable regulators deliver up to 500mA output current over an output voltage range of -1.2 V to -37 V. The device includes
Features. Description. AM15810v1. Table 1: Device summary Order code Marking Package Packing STL8N6F7 8N6F7 PowerFLAT 3.3x3.
N-channel 60 V, 0.019 Ω typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL8N6F7 60 V 0.023 Ω 8 A 1 2 3 4 Among the
N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package. Features. Description
N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD90NS3LLH7 30 V 3.4 mω 80
Features. Description. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247 Tube
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mω (typ., TJ=150 C) in an HiP247 package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction
Features. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STP18N60DM2 18N60DM2 TO-220 Tube
N-channel 600 V, 0.260 Ω typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID STP18N60DM2 600 V 0.295 Ω 12 A Fast-recovery body diode
Automotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI. Features. Description
Automotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI Datasheet - production data Features Order code VDS RDS(on) max. ID STL15DN4F5 40 V 9 mω 15 A Designed
Automotive-grade dual N-channel 30 V, 5.9 mω typ., 20 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package. Features.
Automotive-grade dual N-channel 30 V, 5.9 mω typ., 20 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL66DN3LLH5
Features. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel
N-channel 100 V, 7 mω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL90N10F7 100 V 8 mω 70 A 100 W Among the
Features. Description. Table 1: Device summary Order code Marking Package Packaging STL220N6F7 220N6F7 PowerFLAT TM 5x6 Tape and reel
N-channel 60 V, 1.2 mω typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max. ID STL220N6F7 60 V 1.4 mω 120 A Among the lowest
Prerelease Product(s) - Prerelease Product(s)
N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-220FP wide creepage package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - preliminary data RDS(on) max. ID PTOT
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STFH18N60M2 18N60M2 TO-220FP wide creepage Tube
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH18N60M2 650 V 0.28 Ω 13 A Extremely
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package. Features. Description.
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH10N60M2 650 V 0.60 Ω 7.5 A
PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
Features. Description. Table 1: Device summary Order code Marking Package Packing STL3NK40 3NK40 PowerFLAT 5x5 Tape and reel
STL3NK40 N-channel 400 V, 4.5 Ω typ., 0.43 A, SuperMESH Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STL3NK40 400 V 5.5 Ω 0.43 A 2.5
STH275N8F7-2AG, STH275N8F7-6AG
STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mω typ., 180 A, STripFET F7 Power MOSFETs in H²PAK-2 and H²PAK-6 Datasheet - production data Features Order code VDS RDS(on) max. ID
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
STB20N95K5, STF20N95K5, STP20N95K5, N-channel 950 V, 0.275 Ω typ., 17.5 A MDmesh K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 Datasheet packages - production data Features Order code V DS R DS(on)
SSP20N60S / SSF20N60S 600V N-Channel MOSFET
SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
Features. Description. Table 1: Device summary. Order code Marking Package Packing STL24N60DM2 24N60DM2 PowerFLAT 8x8 HV Tape and reel
N-channel 600 V, 0.195 Ω typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 5 STL24N60DM2 650 V 0.220 Ω 15 A 4
SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25
SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
Using the Peak Detector Voltage to Compensate Output Voltage Change over Temperature
Using the Peak Detector Voltage to Compensate Output Voltage Change over Temperature This document explains how to use the driver amplifier s peak detector to compensate the amplifier s output voltage
Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100
Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered
STB33N60DM2, STP33N60DM2, STW33N60DM2
STB33N60DM2, STP33N60DM2, STW33N60DM2 N-channel 600 V, 0.110 Ω typ., 24 A MDmesh DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code VDS @ TJmax. RDS(on)
Automotive P-channel -40 V, Ω typ., -57 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package. Features. Description
Automotive P-channel -40 V, 0.0115 Ω typ., -57 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Datasheet - preliminary data Features Order codes VDS RDS(on)max. ID -40 V 0.014 Ω -57 Figure 1: Internal
SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packing STF10N60M2 10N60M2 TO-220FP Tube
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A Extremely low gate
Features. Description. AM01475v1_Tab. Table 1: Device summary Order code Marking Package Packing STW240N10F7 240N10F7 TO-247 Tube
N-channel 100 V, 2.6 mω typ., 180 A, STripFET F7 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID 100 V 3.0 mω 180 A 1 2 3 Among the lowest RDS(on) on
Dual N-channel 60 V, 9 mω typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package. Features. Description
Dual N-channel 60 V, 9 mω typ., 57 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island package Datasheet - production data Features Order code VDS RDS(on) max. ID STL50DN6F7 60 V 11 mω 57 A Among
IRF9230 JANTXV2N6806
PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562
STP5N105K5. N-channel 1050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package. Features. Applications. Description
STP5N05K5 N-channel 050 V, 2.9 Ω typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STP5N05K5 050 V 3.5 Ω 3 A 85 W Worldwide best
SJ-FET TSD5N60S/TSU5N60S
September, 2013 SJ-FET TSD5N60S/TSU5N60S OSD5N60S/OSU5N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features. Order code STB28N60DM2 STW28N60DM2
STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 Ω typ., 21 A MDmesh DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data Features Order code STB28N60DM2 STP28N60DM2
Symbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5*
TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
N-channel 100 V, 9.0 mω typ., 110 A STripFET II Power MOSFETs in D²PAK, TO-220 and TO-247 packages. Features. Description
STB120NF10T4, STP120NF10, STW120NF10 N-channel 100 V, 9.0 mω typ., 110 A STripFET II Power MOSFETs in D²PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features Order code VDS RDS(on) max.
N-channel 650 V, Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages. Features STP24N65M2.
STB24N65M2, STF24N65M2, STP24N65M2 N-channel 650 V, 0.185 Ω typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max ID
Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12*
TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C
PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
Features. Description. AM15572v1_no_tab. Table 1: Device summary Order code Marking Package Packaging STQ2LN60K3-AP 2LN60K3 TO-92 Ammopack
N-channel 600 V, 4 Ω typ., 0.6 A MDmesh K3 Power MOSFET in a TO-92 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT STQ2LN60K3-AP 600 V 4.5 Ω 0.6 A 2.5 W 1 TO-92 ammopack
IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings
PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number