1200V GaN Half Bridge VM40HB120D GaN Power Integrated

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1 Description Based on GaN technology as an Intelligent Power Module configurated as Half Bridge. GaN transistors and gate drivers (Buffers) with temperature and current sensors are combined in a single package. The patented electrical design takes advantage of VisIC's innovative GaN technology. Power GaN transistors use an original, high-density lateral layout that results in exceptionally fast switching performance and low RDS(ON). It is very effective in applications requiring high frequency with high efficiency, simple integration and high power density. Key features Lowest switching loss Internal Buffers Internal NTC Internal current sensor Isolated base plate (2.5KV) with standard creepage and clearance distances Copper base plate Zero recovery time, GaN switch reverse conduction capability Robust operation in high EMI environment Very low thermal resistance based on AlN ceramic Compatibility to standard MOSFET external driver (SI8228CB-D as an example) Applications 3 Phase PFC AC-DC Power Supply Motor drive Battery chargers UPS, Solar Inverters Industrial switch mode power supply Single Switch Key Performance s Value VDS (V) 1,200 RDS(ON) (mω) 40 Eoff ( J) 180 Coss (pf) 120 ID,pulse (A) 180 ID,cont (A) 80 Pin Out +12v-HS GATE-HS GND-HS +12v-LS GATE-LS GND-LS HV BUS C.S. C.S. GaN GaN Pin Function Pin Function 4K,5K,6K,7K HV BUS 10K,11K, HV BUS RTN 12K,13K 16D +12v-HS 1G +12v-LS 16F GND-HS 1E GND-LS 7A,8A,9A,10A Midpoint 1C NTC1-LS 10E C.S HS 1B NTC2-LS 7F C.S LS 16G GATE-HS 16H NTC1-HS 1D GATE-LS 16J NTC2-HS CAP HV BUS RTN NTC-H t NTC-L t NTC1-HS NTC2-HS C.S-HS MID C.S-LS NTC1-LS NTC2-LS 19

2 Maximum ratings (Tj =25 C unless otherwise specified) Continuous drain current Each switch ID Min Typical Max Pulsed drain current ID,pulse A Unit A Conditions TC =25 C TC =100 C Drive voltage 1) VDrv 12-0 V Power dissipation each transistor PTOT W Operating and storage temperature Tj, Tstg TC C Continuous reverse current Is A Reverse pulse current 2) Is,pulse A Thermal characteristics Thermal resistance, junction-case - Single switch Thermal resistance, junction - ambient - Single switch Thermal soldering peak temperature 1) VDrv is relative to GND 2) Duty cycle =10% limited by Tj Unit Min Typical Max RθJC CW RθJA CW Tsold C Conditions Top cooling via base plate 4 mm from case for 10s 29

3 Static per single switch Electrical characteristic (Tj =25 C unless otherwise specified) 1) Min Typical Max Related CO(ER) pf Turn-on delay time td(on) Fall time tf Turn-off delay time td(off) ns Rise time tr ) Each transistor 2) V Gate to GND HS&LS, correspondently Unit Conditions Drain-source breakdown voltage VDS V VDrv= 0V Threshold voltage 2) Vth V VDS= 15V, ID=1mA Drain source leakage current IDSS Gate-source leakage current IGSS na Drain-source on state resistance Each switch Reverse voltage drop- At OFF mode Reverse voltage drop- At ON mode RDS(ON) VR VR µa mω VDrv = 0V VDS= 1200V, T j =25 C V Gatev= 0V, V DS= 1200 T j =150 C VDS= 0V VDrv = 12V VDrv =12v ID=35A Tj =25 C VDrv =12v ID=35A Tj =150 C ID=10A Tj =25 C V ID=10A Tj =150 C ID=10A Tj =25 C V ID=10A Tj =150 C Reverse recovery time trr ns Reverse recovery charge Qrr nc Output Charge QOSS nc Dynamic per Single Switch Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective Output Capacitance, Energy pf VDrv=0v VDS=0-800v f=1mhz VDrv =0V VDS=800V VDrv =0 to 12V VDS=0 to 800V VDS=800V VDrv =0V to 12V Rg=5 Ω ID=32A 39

4 Electrical characteristics (Tj =25 C unless otherwise specified) 1) Min Typical Max Unit Conditions Drive characteristics Drive Current IDrv 2 A Midpoint to case Capacitance Capacitance CC MHz 0.1V RMS 1) Each transistor NTCS0402E3104FHT - Thermistor Rated Resistance R kω TNTC = 25 C Deviation of R100 RR % TNTC = 100 C, R100 =6.9kΩ Power dissipation P25 70 mw TNTC = 25 C 50 C R kω TNTC = 50 C 80 C R kω TNTC = 80 C 100 C R kω TNTC = 100 C Module Isolation Test Volatge VISOL 2.5 kv RMS, f=50hz, t=1 min Stray Inductance L 15 nh 49

5 Description Pin Characteristic Min Typical Max External PWM Drive VDrv V Pin 16D +12V-HS 12V-HS Pin 16F GND-HS GND-HS Unit Pin 1G +12V-LS 12V-LS V Pin 16F GND-LS GND-LS Sense 10A High side C.S-HS Sense 10A Low side C.S-LS mv NTC 125 C NTC NTC C NTC V kω 59

6 Package Outlines Top View 69

7 Typical Operating Circuit Note: 12V-HS and 12V_LS are floating voltages, 1500V breakdown is required in between. 79

8 Electrical characteristics diagrams Figure 1: Switching Energy Figure 2: GaN transistor transfer characteristic (source connected to Vdd,Vds=10V) Figure 3: GaN transistor output characterictics Figure 4: Switching time 89

9 Figure 5: Typical capacitances Important Notice VisIC Technologies reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products, latest issue, and to discontinue any product. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. Unless expressly approved in writing by an authorized representative of VisIC technologies, VisIC technologies components are not designed or tested for use in, and is not intended for use in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, weapons systems, authorized or warranted for use in lifesaving, life sustaining, military, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. VisIC Technologies hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. All rights reserved. 99