ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode IKW30N65WR5. Datasheet. InductrialPowerControl
|
|
- Elinor Powell
- 5 years ago
- Views:
Transcription
1 ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode IKW3N65WR5 Datasheet InductrialPowerControl
2 IKW3N65WR5 ReverseConductingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: PowerfulmonolithicdiodeoptimizedforZCSapplications TRENCHSTOP TM 5technologyapplicationsoffers: highruggedness,temperaturestablebehavior verylowvcesatandloweoff easyparallelswitchingcapabilityduetopositive temperaturecoefficientinvcesat LowEMI Lowelectricalparametersdepending(dependence)on temperature QualifiedaccordingtoJESD22fortargetapplications Pbfreeleadplating;RoHScompliant CompleteproductspectrumandPSpiceModels: Applications: Welding PFC ZCSconverters G G C E C E KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package IKW3N65WR5 6V 3A 1.4V 175 C K3EWR5 PGTO2473 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V
3 IKW3N65WR5 ReverseConductingSeries TableofContents Description Table of Contents Maximum Ratings Thermal Resistance Electrical Characteristics Electrical Characteristics Diagrams Package Drawing Testing Conditions Revision History Disclaimer Datasheet 3 V
4 IKW3N65WR5 ReverseConductingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed8%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collectoremittervoltage,Tvj 25 C VCE 6 V DCcollectorcurrent,limitedbyTvjmax TC=25 C TC=117 C IC Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 9. A Turn off safe operating area VCE 6V,Tvj 175 C,tp=1µs Diodeforwardcurrent,limitedbyTvjmax TC=25 C TC= C 9. A IF Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45. A Gateemitter voltage VGE ±2 V PowerdissipationTC=25 C PowerdissipationTC=117 C Ptot Operating junction temperature Tvj C Storage temperature Tstg C Soldering temperature, wave soldering 1.6mm (.63in.) from case for s 26 Mounting torque, M3 screw Maximum of mounting processes: 3 A A W C M.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance junction ambient Rth(jc).81 K/W Rth(jc) 3.4 K/W Rth(ja) 4 K/W Datasheet 4 V
5 IKW3N65WR5 ReverseConductingSeries ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Collectoremitter breakdown voltage V(BR)CES VGE=V,IC=.2mA 6 V Collectoremitter saturation voltage Diode forward voltage VCEsat VF VGE=15.V,IC=3.A Tvj=25 C Tvj=175 C VGE=V,IF=15.A Tvj=25 C Tvj=175 C Gateemitter threshold voltage VGE(th) IC=.3mA,VCE=VGE V Zero gate voltage collector current ICES VCE=6V,VGE=V Tvj=25 C Tvj=175 C Gateemitter leakage current IGES VCE=V,VGE=2V na Transconductance gfs VCE=2V,IC=3.A 35. S Integrated gate resistor rg none Ω V V µa ElectricalCharacteristic,atTvj=25 C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit DynamicCharacteristic Input capacitance Cies 37 Output capacitance Coes VCE=25V,VGE=V,f=1MHz 35 Reverse transfer capacitance Cres 16 Gate charge Internal emitter inductance measured 5mm (.197 in.) from case QG VCC=52V,IC=3.A, VGE=15V pf 155. nc LE 13. nh SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=25 C Turnon delay time td(on) Tvj=25 C, 39 ns Rise time VCC=4V,IC=15.A, tr 12 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=26.Ω,RG(off)=26.Ω, 367 ns Fall time Lσ=45nH,Cσ=32pF tf 9 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.47 mj Turnoff energy Eoff diode reverse recovery.. mj Total switching energy Ets.57 mj Datasheet 5 V
6 IKW3N65WR5 ReverseConductingSeries DiodeCharacteristic,atTvj=25 C Diode reverse recovery time trr Tvj=25 C, 95 ns Diode reverse recovery charge VR=4V, Qrr 1.25 µc IF=15.A, Diode peak reverse recovery current Irrm dif/dt=9a/µs 22. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 59 A/µs SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value min. typ. max. Unit IGBTCharacteristic,atTvj=175 C Turnon delay time td(on) Tvj=175 C, 35 ns Rise time VCC=4V,IC=15.A, tr 14 ns VGE=./15.V, Turnoff delay time td(off) RG(on)=26.Ω,RG(off)=26.Ω, 484 ns Fall time Lσ=45nH,Cσ=32pF tf 9 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include tail and.53 mj Turnoff energy Eoff diode reverse recovery..22 mj Total switching energy Ets.75 mj DiodeCharacteristic,atTvj=175 C Diode reverse recovery time trr Tvj=175 C, 121 ns Diode reverse recovery charge VR=4V, Qrr 2.15 µc IF=15.A, Diode peak reverse recovery current Irrm dif/dt=9a/µs 28. A Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 1 A/µs Datasheet 6 V
7 IKW3N65WR5 ReverseConductingSeries 2 18 not for linear use 16 IC,COLLECTORCURRENT[A] 1 Ptot,POWERDISSIPATION[W] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 1. Forwardbiassafeoperatingarea (D=,TC=25 C,Tvj 175 C,VGE=15V,tp=1µs) TC,CASETEMPERATURE[ C] Figure 2. Powerdissipationasafunctionofcase temperature (Tvj 175 C) 7 9 VGE=2V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] V 13V 11V 9V 8V 7V 6V TC,CASETEMPERATURE[ C] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE 15V,Tvj 175 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tvj=25 C) Datasheet 7 V
8 IKW3N65WR5 ReverseConductingSeries 9 8 VGE = 2V 17V 9 8 Tvj=25 C Tvj=175 C IC,COLLECTORCURRENT[A] V 13V 11V 9V 8V 7V 6V 5V IC,COLLECTORCURRENT[A] VCE,COLLECTOREMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175 C) VGE,GATEEMITTERVOLTAGE[V] Figure 6. Typicaltransfercharacteristic (VCE=2V) VCEsat,COLLECTOREMITTERSATURATION[V] IC = 7A IC = 15A IC = 3A t,switchingtimes[ns] td(off) tf td(on) tr Tvj,JUNCTIONTEMPERATURE[ C] Figure 7. Typicalcollectoremittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) IC,COLLECTORCURRENT[A] Figure 8. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,tvj=175 C,VCE=4V, VGE=/15V,RG(on)=26Ω,RG(off)=26Ω,dynamic Datasheet 8 test circuit in Figure E) V
9 IKW3N65WR5 Reverse Conducting Series td(off) tf td(on) tr t, SWITCHING TIMES [ns] t, SWITCHING TIMES [ns] 1 2 td(off) tf td(on) tr RG, GATE RESISTANCE [Ω] Figure 9. Typical switching times as a function of gate resistance (inductive load, Tvj=175 C, VCE=4V, VGE=/15/V, IC=3A, dynamic test circuit in Figure E) Figure. Typical switching times as a function of junction temperature (inductive load, VCE=4V, VGE=/15V, IC=3A, RG(on)=26Ω, RG(off)=26Ω, dynamic test circuit in Figure E) typ. min. max. 5.5 Eoff Eon Ets E, SWITCHING ENERGY LOSSES [mj] VGE(th), GATEEMITTER THRESHOLD VOLTAGE [V] Tvj, JUNCTION TEMPERATURE [ C] Tvj, JUNCTION TEMPERATURE [ C] Figure 11. Gateemitter threshold voltage as a function of junction temperature (IC=.3mA) Datasheet IC, COLLECTOR CURRENT [A] Figure 12. Typical switching energy losses as a function of collector current (inductive load, Tvj=175 C, VCE=4V, VGE=/15V, RG(on)=26Ω, RG(off)=26Ω, dynamic test circuit in Figure E) 9 V
10 IKW3N65WR5 Reverse Conducting Series Eoff Eon Ets Eoff Eon Ets 1.75 E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] RG, GATE RESISTANCE [Ω] Figure 13. Typical switching energy losses as a function of gate resistance (inductive load, Tvj=175 C, VCE=4V, VGE=/15V, IC=3A, dynamic test circuit in Figure E) Figure 14. Typical switching energy losses as a function of junction temperature (inductive load, VCE=4V, VGE=/15V, IC=3A, RG(on)=26Ω, RG(off)=26Ω, dynamic test circuit in Figure E) 2 1E+4 VCC = 13V VCC = 52V Cies Coes Cres 14 C, CAPACITANCE [pf] VGE, GATEEMITTER VOLTAGE [V] 75 Tvj, JUNCTION TEMPERATURE [ C] QG, GATE CHARGE [nc] Figure 15. Typical gate charge (IC=3A) Datasheet VCE, COLLECTOREMITTER VOLTAGE [V] Figure 16. Typical capacitance as a function of collectoremitter voltage (VGE=V, f=1mhz) V
11 IKW3N65WR5 Reverse Conducting Series Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] Zth(jc), TRANSIENT THERMAL IMPEDANCE [K/W] 1 D = single pulse D = single pulse.1 i: ri[k/w]: 1.2E τi[s]: 5.E7 1.7E5 1.1E4 7.E4 4.5E3.1 1E6 1E5 1E4.1 i: ri[k/w]: 1.8E τi[s]: 6.E7 6.3E5 4.5E4 4.8E E6.1 1E5 tp, PULSE WIDTH [s] Figure 17. IGBT transient thermal impedance as a function of pulse width (D=tp/T).1 Tvj = 25 C, IF = 15A Tvj = 175 C, IF = 15A Qrr, REVERSE RECOVERY CHARGE [µc] 175 trr, REVERSE RECOVERY TIME [ns].1 3. Tvj = 25 C, IF = 15A Tvj = 175 C, IF = 15A Figure 19. Typical reverse recovery time as a function of diode current slope (VR=4V) dif/dt, DIODE CURRENT SLOPE [A/µs] Datasheet.1 Figure 18. Diode transient thermal impedance as a function of pulse width (D=tp/T) 2 1E4 tp, PULSE WIDTH [s] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 2. Typical reverse recovery charge as a function of diode current slope (VR=4V) 11 V
12 IKW3N65WR5 Reverse Conducting Series Tvj = 25 C, IF = 15A Tvj = 175 C, IF = 15A Tvj = 25 C, IF = 15A Tvj = 175 C, IF = 15A dirr/dt, DIODE PEAK RATE OF FALL OF Irr [A/µs] Irr, REVERSE RECOVERY CURRENT [A] dif/dt, DIODE CURRENT SLOPE [A/µs] Figure 21. Typical reverse recovery current as a function of diode current slope (VR=4V) Tvj = 25 C Tvj = 175 C 8 IF = 7A IF = 15A IF = 3A VF, FORWARD VOLTAGE [V] IF, FORWARD CURRENT [A] Figure 22. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=4V) dif/dt, DIODE CURRENT SLOPE [A/µs] VF, FORWARD VOLTAGE [V] Figure 23. Typical diode forward current as a function of forward voltage Datasheet Tvj, JUNCTION TEMPERATURE [ C] Figure 24. Typical diode forward voltage as a function of junction temperature 12 V
13 IKW3N65WR5 Reverse Conducting Series Package Drawing PGTO2473 Datasheet 13 V
14 IKW3N65WR5 Reverse Conducting Series Testing Conditions VGE(t) I,V 9% VGE t rr = t a + t b Q rr = Q a + Q b dif/dt a % VGE b t Qa IC(t) Qb di 9% IC 9% IC % IC % IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 9% VGE Figure D. % VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V
15 IKW3N65WR5 Reverse Conducting Series Revision History IKW3N65WR5 Revision: 21614, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) Preliminary data sheet Minor change Figure Update Figure 14 E(T) Final data sheet New switching parameters for IGBT at Ic=15A Datasheet 15 V
16 Trademarks of Infineon Technologies AG µhvic, µipm, µpfc, AUConvertIR, AURIX, C166, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC, DAVE, DIPOL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR, HEXFET, HITFET, HybridPACK, imotion, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, myd, NovalithIC, OPTIGA, OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PROSIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH, SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC Trademarks updated November 215 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Published by Infineon Technologies AG München, Germany Infineon Technologies AG 216. All Rights Reserved. Important Notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( Please note that this product is not qualified according to the AEC Q or AEC Q1 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25 C Tvjmax Marking Package AIKW40N65DH5 650V 40A 1.66V 175 C AK40EDH5 PG-TO247-3
HighspeedfastIGBTinTRENCHSTOP TM 5technologycopackedwith RAPIDfastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering: BestinClassefficiencyinhardswitchingandresonant topologies
More informationIGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IGBT LowVCE(sat)IGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKW3N65EL5 6VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl IKW3N65EL5
More informationHighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode
IKYNCS Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBTinTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: VTRENCHSTOP TM IGBTtechnologyoffering:
More informationHighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode
IKW5N2BH6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C 2VTRENCHSTOP
More informationLowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode
AIKW5N6CT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C AutomotiveAECQ11qualified DesignedforDC/ACconvertersforAutomotiveApplication
More informationLowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelemittercontrolleddiode
IKY7N2CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedantiparallelemittercontrolleddiode Features: HighspeedH3technologyoffers:
More informationHighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode
IKWNCS6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOP TM IGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryantiparalleldiode Features: C VTRENCHSTOP TM
More informationLowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode
AIKQ12N6CT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C AutomotiveAECQ11qualified DesignedforDC/ACconvertersforAutomotiveApplication
More informationIGBT Highspeed5IGBTinTRENCHSTOP TM technologycopackedwithrapid1 fastandsoftantiparalleldiode
IGBT HighspeedIGBTinTRENCHSTOP TM technologycopackedwithrapid fastandsoftantiparalleldiode 6VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl Highspeedswitchingseriesfifthgeneration
More informationIGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode 5VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl Highspeedswitchingseriesfifthgeneration
More informationLowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryanti-parallelemittercontrolleddiode
IKQ12N6T LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode Features: C VerylowVCE(sat)1.5V(typ.) Maximumjunctiontemperature175 C Shortcircuitwithstandtime5µs
More informationResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW40N135R3. Datasheet. IndustrialPowerControl
ReverseconductingIGBTwithmonolithicbodydiode IHWN5R Datasheet IndustrialPowerControl G C E IHWN5R ReverseconductingIGBTwithmonolithicbodydiode Features: Offersnewhigherbreakdownvoltageto5Vforimproved reliability
More informationIGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryantiparalleldiode IKWN6H3 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration
More informationHighspeedswitchingseriesthirdgenerationIGBTcopackedwithRapid1 fastandsoftantiparalleldiodeinfullyisolatedpackage
IKFW5N6DH3E HighspeedswitchingseriesthirdgenerationIGBTcopackedwithRapid fastandsoftantiparalleldiodeinfullyisolatedpackage Features: C TRENCHSTOP technologyoffers: Shortcircuitwithstandtime5µsatTvj=75
More informationIGBT HighspeedIGBTinTrenchandFieldstoptechnology. IGW50N60H3 600Vhighspeedswitchingseriesthirdgeneration. Datasheet. IndustrialPowerControl
IGBT HighspeedIGBTinTrenchandFieldstoptechnology 6Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl G C E Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology
More informationIGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode
IGBT LowLossDuoPack:IGBTinTRENCHSTOP TM andfieldstoptechnology withsoft,fastrecoveryantiparallelemittercontrolleddiode IKQ1N6TA 6Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl
More informationIGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IGBT Highspeed5FASTIGBTinTRENCHSTOP TM 5technologycopackedwithRAPID fastandsoftantiparalleldiode IKP4N65F5,IKW4N65F5 65VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl
More informationInductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl
InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHWNR Datasheet IndustrialPowerControl IHWNR Reverse conducting IGBT with monolithic body diode Features: C Powerful monolithic body
More informationPVI5080NPbF, PVI5080NSPbF
PVI5080NPbF, PVI5080NSPbF Photovoltaic Isolator Single Channel 5-10 Volt Output General Description The PVI Series Photovoltaic Isolator generates an electrically isolated DC voltage upon receipt of a
More informationBSP752R. Features. Applications. Smart High-Side Power Switch
Features Overload protection Current limitation Short circuit protection Thermal shutdown with restart Overvoltage protection (including load dump) Fast demagnetization of inductive loads Reverse battery
More informationOrderable Part Number IRL100HS121 PQFN 2mm x 2mm Tape and Reel 4000 IRL100HS121. Typical R DS(on) (m )
Target Applications Wireless charging Adapter Telecom Benefits Higher power density designs Higher switching frequency IR MOSFET - Uses OptiMOS TM 5 Chip Reduced parts count wherever 5V supplies are available
More informationThe new OptiMOS V
AN_201610_PL11_001 The new OptiMOS 5 150 V About this document Scope and purpose The new OptiMOS TM 5 150 V shows several improvements. As a result of deep investigations before starting the development
More informationPDP SWITCH. V DS min 250 V. V DS(Avalanche) typ. 300 V R DS(on) 10V 29 m T J max 175 C. IRFB4332PbF TO-220 Tube 50 IRFB4332PbF
PDP SWITCH Feature Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy
More informationQualified for industrial apllications according to the relevant tests of JEDEC47/20/22. Pin 1
TVS (Transient Voltage Suppressor) Bi-directional, 5.5 V,.23 pf, 2, RoHS and Halogen Free compliant Features ESD / transient protection according to: - IEC6-4-2 (ESD): ±2 kv (air / contact discharge) -
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET D V DSS 250V Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET D V DSS 25V Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power
More informationQualified for industrial applications according to the relevant tests of JEDEC47/20/22
Product description NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET D V DSS 300V Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power
More informationIR MOSFET - StrongIRFET
IR MOSFET - StrongIRFET Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed
More informationI D = 34A 70 T J = 125 C V GS, Gate -to -Source Voltage (V)
R DS(on), Drain-to -Source On Resistance (m ) R DS (on), Drain-to -Source On Resistance (m ) IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) Quality Requirement Category: Consumer
More informationIRF9530NSPbF IRF9530NLPbF
IRF9530NSPbF IRF9530NLPbF Benefits Advanced Process Technology Surface Mount (IRF9530NS) Low-profile through-hole(irf9530nl) 175 C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free
More informationSMPS MOSFET IRF6218SPbF
SMPS MOSFET HEXFET Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters V DSS R DS(on) (max) I D - 150V 150m @ V GS = -V -27A Benefits Low Gate to Drain Charge to Reduce Switching
More informationTrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STGYA120M65DF2AG G120M65DF2AG Max247 long leads Tube
Automotivegrade trench gate fieldstop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet production data Features AECQ101 qualified 6 µs of shortcircuit withstand time VCE(sat)
More informationIRDC3883 P3V3 user guide
UG_2062_PL7_02 IRDC3883 P3V3 user guide About this document Scope and purpose The IR3883 is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 3mm X 3
More informationSTGW40H120DF2, STGWA40H120DF2
STGW4H12DF2, STGWA4H12DF2 Trench gate field-stop IGBT, H series 12 V, 4 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
More informationIKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Best in class TO247 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted
More informationTrench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package. Features. Description. Table 1: Device summary
Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120
More informationIHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Short circuit withstand time 10µs Designed for : Soft Switching Applications Induction
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STGW10M65DF2 G10M65DF2 TO-247 Tube
Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time
More informationTrench gate field-stop IGBT, HB series 650 V, 20 A high speed. Features. Description
Trench gate fieldstop IGBT, HB series 650 V, 20 A high speed Datasheet production data TAB 3 2 1 TO3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C Minimized tail
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation
More informationTrench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package. Features. Description
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a TO-220FP package Datasheet - production data Features 6 μs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO247-4 package Datasheet - production data Features Maximum junction temperature: TJ = 175 C Kelvin pin Minimized tail current Low saturation
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 3 2 1 TO-3P Figure 1: Internal schematic diagram Features Maximum junction temperature: TJ = 175 C High speed
More informationSTGW80H65DFB, STGWT80H65DFB
STGW80H65DFB, STGWT80H65DFB Trench gate fieldstop IGBT, HB series 650 V, 80 A high speed Datasheet production data TAB 3 2 1 TO247 TO3P Figure 1: Internal schematic diagram 1 3 2 Features Maximum junction
More informationIRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF
IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF Applications High frequency DC-DC converters Plasma Display Panel Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationSTGFW40V60DF, STGW40V60DF, STGWT40V60DF
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.8 V (typ.) @ IC = 40
More informationTrench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO247 3 2 Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V (typ.)
More informationTrenchStop Series. Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Approx. 1.0V reduced V CE(sat) and 0.5V reduced V F compared to BUP314D Short circuit withstand
More informationIRLI3705NPbF. HEXFET Power MOSFET V DSS 55V. R DS(on) 0.01 I D 52A
Logic Level Gate Drive dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully valanche Rated Lead-Free HEXFET Power MOSFET V DSS R DS(on)
More informationFeatures. Description. NG4K3E2C1_no_d. Table 1: Device summary Order code Marking Package Packaging STGW80H65FB-4 G80H65FB TO247-4 Tube
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed in TO247-4 package Datasheet - production data Features VCE(sat) = 1.6 V (typ.) @ IC = 80 A Maximum junction temperature: TJ = 175 C High speed
More informationEvaluation Board for DC Motor Control with the IFX9201. This board user manual provides a basic introduction to the hardware of the H-Bridge Kit 2Go.
- Board User Manual H-Bridge Kit 2Go About this document Scope and purpose This board user manual provides a basic introduction to the hardware of the H-Bridge Kit 2Go. The H-Bridge Kit 2Go is a complete
More information24 V ADR Switch Demonstrator
About this document Scope and purpose This provides a short introduction into the and its application. Intended audience Electrical engineers who are qualified and familiar with the challenges of handling
More informationAutomotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed. Features. Ignition. Description
Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data TAB 2 3 1 D²PAK Features AEC-Q101 qualified Maximum junction temperature: TJ = 175 C Logic level
More informationESD (Electrostatic discharge) sensitive device, observe handling precautions
Product description The BFQ79 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost effective NPN silicon germanium technology. Not internally matched, the BFQ79
More informationTLE7268SK, TLE7268LC Application Note
TLE7268SK, TLE7268LC Application Note Dual LIN Transceiver About this document Scope and purpose This document provides application information for the transceiver TLE7268 from Infineon Technologies AG
More informationIDW100E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy
More informationQuasi-resonant control with XMC1000
AN_201606_PL30_020 Quasi-resonant control with XMC1000 About this document Scope and purpose This document introduces quasi-resonant control as a technique which enables traditional switched-mode power
More informationTrench gate field-stop IGBT, HB series 650 V, 40 A high speed. Features. Description G1C2TE3
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C(2, TAB) G(1) E(3) Features Maximum junction temperature:
More informationSG200-12CS2 200A1200V IGBT Module
Typical applications: AC and DC electric motor control Frequency transformer UPS Industry power supply Electric welding machine Characteristics: SPT chip (soft-punch-through) MOS input control Ultra thin
More informationIDW75E60. Fast Switching Emitter Controlled Diode. IFAG IPC TD VLS 1 Rev
Fast Switching Emitter Controlled Diode Features: 600V EmCon technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175 C junction operating temperature Easy paralleling
More informationSTGFW40H65FB, STGW40H65FB, STGWA40H65FB, STGWT40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TO-3PF 1 2 3 TAB TO-247 1 2 3 Features Maximum junction temperature: TJ = 175 C High speed switching series Minimized
More informationSTGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD
STGB19NC60KDT4, STGF19NC60KD, 20 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 2 D PAK TAB 1 2 3 TO-220FP Features Low on voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationSTGW60H65DFB, STGWA60H65DFB STGWT60H65DFB
STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching
More informationTLS810B1xxV33. 1 Overview. Ultra Low Quiescent Current Linear Voltage Regulator. Quality Requirement Category: Automotive
1 Overview Quality Requirement Category: Automotive Features Ultra Low Quiescent Current of 5.5 µa Wide Input Voltage Range of 2.75 V to 42 V Output Current Capacity up to 100 ma Off Mode Current Less
More informationVCC 320V, VGE=15V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 360 W
FGW5NVD (High-Speed V series) V / 5A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive
More informationIGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
More informationXI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
More informationTC=25 C, Tj=150 C Note *1
FGW75N6HD (High-Speed V series) 6V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner
More informationHigh voltage gate driver IC. 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ. EiceDRIVER Compact
High voltage gate driver IC 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ EiceDRIVER Compact Final datasheet , 18.08.2016 Final Industrial Power
More information10 A, 600 V short-circuit rugged IGBT
10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS
More informationHow to drive a unipolar stepper motor with the TLE8110ED
How to drive a unipolar stepper motor with the TLE8110ED Product Family: Flex Multichannel Low Side Switches About this document Scope and purpose This Application Note demonstrates the behavior of the
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationHigh voltage CoolMOS CE in SOT-223 package
AN_201603_PL52_016 High voltage CoolMOS CE in SOT-223 package About this document Scope and purpose Nowadays, the package costs of high voltage, high ohmic MOSFETs (metal oxide semiconductor field effect
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationVCC 600V,VGE=12V Tj 150 C. Emitter IGBT Max. Power Dissipation PD_IGBT 340 W
FGWNHD (High-Speed V series) V / A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationSTGW60H65FB STGWT60H65FB
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationSTGW60H65DFB STGWT60H65DFB
STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized tail
More informationTLF4277-2LD. 1 Overview
1 Overview Features Integrated Current Monitor Overvoltage, Overtemperature and Overcurrent Detection Adjustable Output Voltage Output Current up to 300 ma Adjustable Output Current Limitation Stable with
More informationSTGFW20H65FB, STGW20H65FB, STGWT20H65FB
STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TO-247 TAB 3 2 1 TO-3P 1 1 2 3 2 1 TO-3PF Figure 1. Internal schematic
More informationControl Integrated POwer System (CIPOS )
Control Integrated POwer System (CIPOS ) Datasheet Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com Table of Contents CIPOS Control
More informationSTGW28IH125DF STGWT28IH125DF
STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T J = 175 C Minimized
More informationItem Symbol Unit MBN1800FH33F Collector Emitter Voltage VCES V 3,300 Gate Emitter Voltage VGES V 20 Collector Current
Spec.No.IGBT-SP-162 R1 P1 Silicon N-channel IGBT 33V F version FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity
More informationHigh voltage gate driver IC. 600 V half bridge gate drive IC 2EDL23I06PJ 2EDL23N06PJ. EiceDRIVER Compact. <Revision 2.4>,
High voltage gate driver IC 600 V half bridge gate drive IC 2EDL23I06PJ 2EDL23N06PJ EiceDRIVER Compact Final datasheet , 28.11.2017 Final Industrial Power Control Edition 28.11.2017 Published
More informationTRENCHSTOP TM IGBT3 Chip SIGC20T120LE
IGBT TRENCHSTOP TM IGBT3 Chip SIGC20T120LE Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical Characteristics...
More informationMBN1000FH65G2 Silicon N-channel IGBT 6500V G2 version
Silicon N-channel IGBT 65V G2 version Spec.No.IGBT-SP-1639 R2 P1 FEATURES Low dv/dt noise, low switching loss & low conduction loss Soft low-injection punch-through Novel Side-gate High conductivity IGBT
More informationSTGW40V60DF STGWT40V60DF
STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching
More informationSTGW40V60DF STGWT40V60DF
STGW4V6DF STGWT4V6DF 6 V, 4 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB Maximum junction temperature: T J = 175 C Very high speed switching series Tail-less switching
More informationTRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L
IGBT TRENCHSTOP TM IGBT4 Low Power Chip IGC13T120T8L Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical
More informationTRENCHSTOP TM IGBT3 Chip SIGC42T170R3GE
IGBT TRENCHSTOP TM IGBT3 Chip SIGC42T170R3GE Data Sheet Industrial Power Control Table of Contents Features and Applications... 3 Mechanical Parameters... 3 Maximum Ratings... 4 Static and Electrical Characteristics...
More informationAdvanced Gate Drive Options for Silicon- Carbide (SiC) MOSFETs using EiceDRIVER
AN2017-04 Advanced Gate Drive Options for Silicon- Carbide (SiC) About this document Scope and purpose This application note discusses the basic parameters of silicon-carbide (SiC) MOSFETs and derives
More information16 W single end cap T8 lighting demo board
AN_060_PL5_003 6 W single end cap T8 lighting demo board About this document Scope and purpose This document is for a 6 W/70 ma single stage single end cap T8 LED lamp reference using average current control
More informationTLE4959C Transmission Speed Sensor
Features Hall based differential speed sensor High magnetic sensitivity Large operating airgap Dynamic self-calibration principle Adaptive hysteresis Direction of rotation detection High vibration suppression
More information